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1. 发明授权

US5889573A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5889573A
公开(公告)日：1999-03-30
申请号：US928719
申请日：1997-09-12
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof.In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

2. 发明授权

US5359206A Thin film transistor substrate, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，液晶显示面板和液晶显示设备
公开(公告)号：US5359206A
公开(公告)日：1994-10-25
申请号：US674328
申请日：1991-04-15
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L23/48 , H01L27/01 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： Disclosed is an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. In the TFT substrate, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extending therefrom, for gate electrodes, and for electrodes of thin film capacitors (additional capacitance, storage capacitance), and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulating films for the intersections between the bus-lines. Also disclosed is a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译： PCT No.PCT / JP90 / 01039 Sec。 371日期：1991年4月15日 102（e）日期1991年4月15日PCT提交1990年8月13日PCT公布。 WO91 / 02999 PCT出版物 1991年3月7日公开。公开是使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用液体的液晶显示设备水晶显示面板。在TFT基板中，使用Cr或Ta作为栅极端子，铝或主要由铝构成的金属用于从栅极电极延伸的栅极总线，以及用于薄膜电容器的电极（附加电容，存储电容）并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。还公开了在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

3. 发明授权

US5719408A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5719408A
公开(公告)日：1998-02-17
申请号：US803011
申请日：1997-02-21
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L29/04 , H01L27/108 , H01L31/036
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus lines. The present invention also relates to a method of selectively forming an anodic oxidized film on an aluminum pattern. That is, in a case of forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, in the present invention, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .theta..gtoreq.110-20T (T: film thickness of the positive type photoresist).
摘要翻译：在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。本发明还涉及在铝图案上选择性地形成阳极氧化膜的方法。也就是说，在使用正型光致抗蚀剂在铝图案上的期望区域上形成选择性氧化掩模的情况下，在本发明中，在选择性氧化掩模和铝图案之间形成的角度（θ）为： θ= 110-20T（T：正型光致抗蚀剂的膜厚度）。

4. 发明授权

US5585290A Method of manufacturing a thin film transistor substrate 失效
标题翻译：制造薄膜晶体管基板的方法
公开(公告)号：US5585290A
公开(公告)日：1996-12-17
申请号：US158219
申请日：1993-11-29
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示设备，更具体地，涉及能够改善其特性的结构和制造方法。在本发明中，Cr或Ta用于栅极端子，铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）和阳极氧化膜由金属构成并且没有缺陷用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一个。在更优选的结构中，阳极氧化膜用于所有栅极绝缘体，用于薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜。

5. 发明授权

US5672523A Thin film transistor substrate, manufacturing method thereof, liquid crystal display panel and liquid crystal display equipment 失效
标题翻译：薄膜晶体管基板，其制造方法，液晶显示面板和液晶显示设备
公开(公告)号：US5672523A
公开(公告)日：1997-09-30
申请号：US451209
申请日：1995-05-26
申请人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
发明人： Hideaki Yamamoto , Haruo Matsumaru , Yasuo Tanaka , Ken Tsutsui , Toshihisa Tsukada , Kazuo Shirahashi , Akira Sasano , Yuka Matsukawa
IPC分类号： G02F1/1343 , G02F1/1345 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/30 , G09G3/36 , H01L21/3205 , H01L21/336 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/84
CPC分类号： G02F1/136286 , G02F1/1345 , G02F1/136213 , H01L29/4908 , H01L2924/0002
摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.
摘要翻译：本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。阳极氧化膜在形成后进行热处理，以减少漏电流。

6. 发明授权

US5610738A Method for making LCD device in which gate insulator of TFT is formed after the pixel electrode but before the video signal line 失效
标题翻译：制造在像素电极之后但在视频信号线之前形成TFT的栅极绝缘体的LCD器件的方法
公开(公告)号：US5610738A
公开(公告)日：1997-03-11
申请号：US411207
申请日：1995-03-27
申请人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
发明人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
IPC分类号： G02F1/1362 , G02F1/1368 , G02F1/1343 , G02F1/1333
CPC分类号： G02F1/1368 , G02F1/136213 , G02F1/13624
摘要： An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided. In such a device structure, in which the spacing between the ITO and the gate electrode can be compacted while ensuring that there are no short-circuits effected between the ITO layer and gate electrode during the manufacture of the LCD device, the gate electrode and, therefore, also the plate (lower) electrode of the capacitor Cadd are first formed, followed by the formation of the AOF layer over the gate electrode and over the plate electrode of the capacitor, respectively. Subsequently, the ITO pixel electrode is formed on the same plane as that of the first conductive layer, corresponding to the gate electrode and plate electrode of capacitor Cadd, and is followed by the formation of a relatively thicker second insulating layer, for example, a nitride insulating layer, on the first insulating layer, namely, the anodized oxide film, and on the pixel electrode. In accordance with this scheme, furthermore, the first insulating layer is formed by anodizing the metal layer constituting the first conductive layer.
摘要翻译：一种有源矩阵液晶显示装置，其具有设置在玻璃基板上的多个薄膜晶体管，每个薄膜晶体管均包括铝栅电极的阳极化氧化膜，其中透明像素电极形成在与玻璃之间的栅极电极相同的平面中衬底和非晶硅岛，其上设置有源极和漏极。在这样的器件结构中，可以在确保在LCD器件的制造期间在ITO层和栅电极之间没有短路的情况下，可以使ITO和栅电极之间的间隔被压实，因此，首先形成电容器Cadd的板（下）电极，然后分别在栅电极和电容器的平板电极之上形成AOF层。随后，ITO像素电极形成在与电容器Cadd的栅电极和平板电极相对应的与第一导电层相同的平面上，随后形成相对较厚的第二绝缘层，例如，氮化物绝缘层，在第一绝缘层上，即阳极氧化氧化膜上，和像素电极上。此外，根据该方案，通过阳极氧化构成第一导电层的金属层来形成第一绝缘层。

7. 发明授权

US5285301A Liquid crystal display device having peripheral dummy lines 失效
标题翻译：具有外围虚拟线的液晶显示装置
公开(公告)号：US5285301A
公开(公告)日：1994-02-08
申请号：US851925
申请日：1992-03-16
申请人： Kazuo Shirahashi , Yuka Matsukawa , Akira Sasano , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
发明人： Kazuo Shirahashi , Yuka Matsukawa , Akira Sasano , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
IPC分类号： G02F1/1362 , G02F1/133
CPC分类号： G02F1/1362
摘要： An active matrix liquid crystal display device with a plurality of thin-film transistors each including a gate electrode, preferably made of an aluminum film formed over a glass substrate, and a gate insulator preferably made of an upper silicon nitride film and a lower anodized oxide film of the aluminum film. Dummy gate lines DGL are disposed outside the outermost scanning signal line GL, and dummy data lines DDL are disposed outside the outermost video signal line DL so as to prevent breakage of outermost signal lines.
摘要翻译：具有多个薄膜晶体管的有源矩阵液晶显示装置，每个薄膜晶体管都包括优选由玻璃基板上形成的铝膜制成的栅极电极和优选由上部氮化硅膜和下部阳极化氧化物制成的栅极绝缘体铝膜薄膜。虚拟栅极线DGL设置在最外侧扫描信号线GL的外侧，虚设数据线DDL配置在最外侧的视频信号线DL的外侧，以防止最外侧的信号线的断裂。

8. 发明授权

US5671027A LCD device with TFTs in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films and before the deposition of the silicon gate insulator 失效
标题翻译：具有TFT的LCD器件，其中像素电极与具有阳极化氧化膜的栅极形成在同一平面中，并且在沉积硅栅绝缘体之前
公开(公告)号：US5671027A
公开(公告)日：1997-09-23
申请号：US509821
申请日：1995-08-01
申请人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
发明人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
IPC分类号： G02F1/1362 , G02F1/1368 , G02F1/136 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136213 , G02F1/13624
摘要： An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.
摘要翻译：一种有源矩阵液晶显示装置，其具有设置在玻璃基板上的多个薄膜晶体管，每个薄膜晶体管均包括铝栅电极的阳极化氧化膜，其中透明像素电极形成在与玻璃之间的栅极电极相同的平面中衬底和非晶硅岛，其上设置有源极和漏极。

9. 发明授权

US5402254A Liquid crystal display device with TFTS in which pixel electrodes are formed in the same plane as the gate electrodes with anodized oxide films before the deposition of silicon 失效
标题翻译：具有TFTS的液晶显示装置，其中像素电极与沉积硅之前的具有阳极化氧化膜的栅极形成在同一平面中
公开(公告)号：US5402254A
公开(公告)日：1995-03-28
申请号：US156640
申请日：1993-11-24
申请人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
发明人： Akira Sasano , Kazuo Shirahashi , Yuka Matsukawa , Hideaki Taniguchi , Hideaki Yamamoto , Haruo Matsumaru
IPC分类号： G02F1/1362 , G02F1/1368 , G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136213 , G02F1/13624
摘要： An active matrix liquid crystal display device, with a plurality of thin-film transistors provided over a glass substrate each including an anodized oxide film of aluminum gate electrode, in which transparent pixel electrodes are formed in the same plane as the gate electrodes between the glass substrate and amorphous silicon islands over which source and drain electrodes are provided.
摘要翻译：一种有源矩阵液晶显示装置，其具有设置在玻璃基板上的多个薄膜晶体管，每个薄膜晶体管均包括铝栅电极的阳极化氧化膜，其中透明像素电极形成在与玻璃之间的栅极电极相同的平面中衬底和非晶硅岛，其上设置有源极和漏极。

10. 发明授权

US4855795A Photosensor 失效
标题翻译：光电传感器
公开(公告)号：US4855795A
公开(公告)日：1989-08-08
申请号：US898540
申请日：1986-08-21
申请人： Hideaki Yamamoto , Akira Sasano , Haruo Matsumaru , Yasuo Tanaka , Toshihisa Tsukada
发明人： Hideaki Yamamoto , Akira Sasano , Haruo Matsumaru , Yasuo Tanaka , Toshihisa Tsukada
IPC分类号： H01L27/14 , H01L27/146 , H01L31/0216 , H01L31/0224 , H01L31/09 , H01L31/20 , H04N1/028
CPC分类号： H01L27/14665 , H01L31/0216 , H01L31/022466 , H01L31/095 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of a boron-containing hydrogenated amorphous silicon semiconductor which is obtained by the glow discharge decomposition of a mixed gas of monosilane and diborane, a transparent electrode and a transparent protective layer, these elements being laminated in that order. The insertion of the junction stabilizing layer between the photoconductor layer and the transparent electrode greatly improves the dark current characteristic. The electrode, the photoconductor layer and the junction stabilizing layer can be divided in correspondence with each picture element, thereby improving the resolution of the photosensor.
摘要翻译：光传感器包括绝缘基板，电极，由通过单硅烷气体的辉光放电分解获得的氢化非晶硅半导体层构成的感光体层，由含硼氢化非晶硅半导体构成的结稳定层，其由甲硅烷和乙硼烷的混合气体的辉光放电分解，透明电极和透明保护层，这些元素按顺序层压。在光电导体层和透明电极之间插入结稳定层极大地改善了暗电流特性。电极，光电导体层和结稳定层可以与每个像素对应地划分，从而提高光传感器的分辨率。

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