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    • 3. 发明授权
    • Thin-film magnetic device, and electronic component module having same
    • 薄膜磁性装置和具有该薄膜磁性装置的电子部件模块
    • US07864017B2
    • 2011-01-04
    • US12033422
    • 2008-02-19
    • Toshiyasu FujiwaraKyung-Ku Choi
    • Toshiyasu FujiwaraKyung-Ku Choi
    • H01F5/00
    • H01F17/0033H01F17/0013H01F27/346H01F2017/002H01F2017/0066H01F2017/008H01L2924/0002H01L2924/00
    • It is an object of the present invention to provide an electronic component module with which circuit malfunction can be adequately prevented. There are provided a base having wiring, and a thin-film magnetic device provided on one side of the base. The thin-film magnetic device comprises a first magnetic film disposed facing the base, a second magnetic film disposed on the opposite side of the first magnetic film with respect to the base, and a thin-film coil wound so as to encircle the second magnetic film a plurality of times. The thin-film coil has a plurality of first conductor pattern components provided between the first and second magnetic films, a plurality of second conductor pattern components provided on the opposite side of the second magnetic film with respect to the first magnetic film, and a plurality of connecting conductors that connect the first conductor pattern components and the second conductor pattern components in series. The relative magnetic permeability of the second magnetic film is greater than the relative magnetic permeability of the first magnetic film.
    • 本发明的目的是提供一种可以充分防止电路故障的电子部件模块。 提供了具有布线的基座和设置在基座一侧的薄膜磁性装置。 所述薄膜磁性装置包括面向所述基座的第一磁性膜,相对于所述基底设置在所述第一磁性膜的相反侧的第二磁性膜,以及环绕所述第二磁性体的环绕所述第二磁性膜的薄膜线圈 多次拍摄。 所述薄膜线圈具有设置在所述第一和第二磁性膜之间的多个第一导体图案部件,设置在所述第二磁性膜相对于所述第一磁性膜的相反侧的多个第二导体图案部件,以及多个 连接导体,其连接第一导体图案部件和第二导体图案部件。 第二磁性膜的相对导磁率大于第一磁性膜的相对导磁率。
    • 10. 发明授权
    • Thin film capacitor and method for fabricating the same
    • 薄膜电容器及其制造方法
    • US06876536B2
    • 2005-04-05
    • US10331140
    • 2002-12-27
    • Yukio SakashitaKyung-Ku Choi
    • Yukio SakashitaKyung-Ku Choi
    • H01G4/10H01G4/12H01G4/228H01G4/32H01G4/33H01L21/02H01L27/01H01L29/76
    • H01G4/33H01G4/10H01G4/228H01L27/016H01L28/57H01L28/65
    • A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, a bismuth oxide layer (Bi2O2)2+ functions as an insulating layer, thereby improves the insulation property of the dielectric thin film while makes the thin film much thinner.
    • 一种薄膜电容器,包括第一电极结构体,第二电极结构体和设置在第一和第二电极结构体之间并且包含铋层结构化合物的电介质薄膜。 与电介质薄膜接触的第一电极结构体的表面在[001]方向上取向。 结果,电介质薄膜被天然地取向为使其c轴基本垂直于电极结构体。 当在第一和第二电极结构体之间施加电压时,由于电场方向基本上与铋层结构化合物的c轴重合,所以可以防止铋层结构化合物表现出铁电性质, 充分展现了顺电特性。 此外,氧化铋层(Bi 2 O 2)2+充当绝缘层,从而提高电介质薄膜的绝缘性,同时使薄膜更薄。