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    • 4. 发明授权
    • Thin film capacitor and method for fabricating the same
    • 薄膜电容器及其制造方法
    • US06876536B2
    • 2005-04-05
    • US10331140
    • 2002-12-27
    • Yukio SakashitaKyung-Ku Choi
    • Yukio SakashitaKyung-Ku Choi
    • H01G4/10H01G4/12H01G4/228H01G4/32H01G4/33H01L21/02H01L27/01H01L29/76
    • H01G4/33H01G4/10H01G4/228H01L27/016H01L28/57H01L28/65
    • A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, a bismuth oxide layer (Bi2O2)2+ functions as an insulating layer, thereby improves the insulation property of the dielectric thin film while makes the thin film much thinner.
    • 一种薄膜电容器,包括第一电极结构体,第二电极结构体和设置在第一和第二电极结构体之间并且包含铋层结构化合物的电介质薄膜。 与电介质薄膜接触的第一电极结构体的表面在[001]方向上取向。 结果,电介质薄膜被天然地取向为使其c轴基本垂直于电极结构体。 当在第一和第二电极结构体之间施加电压时,由于电场方向基本上与铋层结构化合物的c轴重合,所以可以防止铋层结构化合物表现出铁电性质, 充分展现了顺电特性。 此外,氧化铋层(Bi 2 O 2)2+充当绝缘层,从而提高电介质薄膜的绝缘性,同时使薄膜更薄。
    • 5. 发明授权
    • Thin-film magnetic device, and electronic component module having same
    • 薄膜磁性装置和具有该薄膜磁性装置的电子部件模块
    • US07864017B2
    • 2011-01-04
    • US12033422
    • 2008-02-19
    • Toshiyasu FujiwaraKyung-Ku Choi
    • Toshiyasu FujiwaraKyung-Ku Choi
    • H01F5/00
    • H01F17/0033H01F17/0013H01F27/346H01F2017/002H01F2017/0066H01F2017/008H01L2924/0002H01L2924/00
    • It is an object of the present invention to provide an electronic component module with which circuit malfunction can be adequately prevented. There are provided a base having wiring, and a thin-film magnetic device provided on one side of the base. The thin-film magnetic device comprises a first magnetic film disposed facing the base, a second magnetic film disposed on the opposite side of the first magnetic film with respect to the base, and a thin-film coil wound so as to encircle the second magnetic film a plurality of times. The thin-film coil has a plurality of first conductor pattern components provided between the first and second magnetic films, a plurality of second conductor pattern components provided on the opposite side of the second magnetic film with respect to the first magnetic film, and a plurality of connecting conductors that connect the first conductor pattern components and the second conductor pattern components in series. The relative magnetic permeability of the second magnetic film is greater than the relative magnetic permeability of the first magnetic film.
    • 本发明的目的是提供一种可以充分防止电路故障的电子部件模块。 提供了具有布线的基座和设置在基座一侧的薄膜磁性装置。 所述薄膜磁性装置包括面向所述基座的第一磁性膜,相对于所述基底设置在所述第一磁性膜的相反侧的第二磁性膜,以及环绕所述第二磁性体的环绕所述第二磁性膜的薄膜线圈 多次拍摄。 所述薄膜线圈具有设置在所述第一和第二磁性膜之间的多个第一导体图案部件,设置在所述第二磁性膜相对于所述第一磁性膜的相反侧的多个第二导体图案部件,以及多个 连接导体,其连接第一导体图案部件和第二导体图案部件。 第二磁性膜的相对导磁率大于第一磁性膜的相对导磁率。
    • 9. 发明授权
    • Magnetic thin film and method of forming the same, magnetic device and inductor, and method of manufacturing magnetic device
    • 磁性薄膜及其形成方法,磁性器件和电感器以及制造磁性器件的方法
    • US07588840B2
    • 2009-09-15
    • US11287322
    • 2005-11-28
    • Kyung-Ku Choi
    • Kyung-Ku Choi
    • H01F1/12H01F17/00
    • B82Y25/00H01F10/007H01F17/0006H01F41/14Y10T428/115Y10T428/12465Y10T428/12771Y10T428/12986Y10T428/32
    • A magnetic thin film with a high resonant frequency and superior high-frequency characteristics, and a magnetic device and an inductor with superior high-frequency characteristics are provided. A planar coil and a magnetic thin film are disposed on a substrate, and an inductor is formed between connection terminals. An obliquely-grown magnetic layer in the magnetic thin film is crystal-grown in an oblique direction with respect to a surface of the substrate (an obliquely-grown magnetic body). In order to make the obliquely-grown magnetic body exhibit soft magnetism in the obliquely-grown magnetic layer, an insulator is mixed into the obliquely-grown magnetic body. The obliquely-grown magnetic layer shows in-plane magnetocrystalline anisotropy, and the in-plane magnetocrystalline anisotropy is increased, and an anisotropic magnetic field is increased. The anisotropic magnetic field can be changed only by a crystal growth direction of the obliquely-grown magnetic layer, so without reducing saturation magnetization, the anisotropic magnetic field can be increased, and the resonant frequency of the magnetic thin film can be improved.
    • 提供了具有高谐振频率和优异的高频特性的磁性薄膜,以及具有优异的高频特性的磁性器件和电感器。 平面线圈和磁性薄膜设置在基板上,并且在连接端子之间形成电感器。 磁性薄膜中的倾斜生长磁性层相对于基板(倾斜生长的磁性体)的表面在倾斜方向上晶体生长。 为了使倾斜生长的磁性体在倾斜生长的磁性层中呈现柔软的磁性,将绝缘体混入倾斜生长的磁性体中。 倾斜生长的磁性层显示平面内的晶体各向异性,面内磁晶各向异性增大,各向异性磁场增加。 各向异性磁场只能通过倾斜生长磁性层的晶体生长方向进行改变,因此不会降低饱和磁化强度,能够提高各向异性磁场,提高磁性薄膜的共振频率。