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1. 发明申请

US20050040516A1 THIN FILM CAPACITOR AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US20050040516A1
公开(公告)日：2005-02-24
申请号：US10331140
申请日：2002-12-27
申请人： Yukio Sakashita , Kyung-Ku Choi
发明人： Yukio Sakashita , Kyung-Ku Choi
IPC分类号： H01G4/10 , H01G4/12 , H01G4/228 , H01G4/32 , H01G4/33 , H01L21/02 , H01L27/01 , H01L29/76
CPC分类号： H01G4/33 , H01G4/10 , H01G4/228 , H01L27/016 , H01L28/57 , H01L28/65
摘要： A thin film capacitor according to the present invention includes a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first electrode structural body and the second electrode structural body and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the orientation of the bismuth layer structured compound contained in the dielectric thin film in the [001] direction, namely, the c axis direction thereof, can be improved. Therefore, when a voltage is applied between the first electrode structural body and the second electrode structural body, since the direction of the electric field substantially coincides with the c axis of bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, since a bismuth oxide layer (Bi2O2)2+ functions as an insulating layer, the insulation property of the dielectric thin film can be improved, whereby the dielectric thin film can be made much thinner. Since it is therefore possible to simultaneously make a thin film capacitor small and the capacitance thereof great, the thin film capacitor can be preferably used as a decoupling capacitor, in particular, a decoupling capacitor for an LSI having a high operating frequency.
摘要翻译：根据本发明的薄膜电容器包括第一电极结构体，第二电极结构体和设置在第一电极结构体和第二电极结构体之间并且含有铋层结构化合物的电介质薄膜。与电介质薄膜接触的第一电极结构体的表面在[001]方向上取向。结果，可以提高包含在电介质薄膜中的[001]方向即其c轴方向的铋层结构化合物的取向。因此，当在第一电极结构体和第二电极结构体之间施加电压时，由于电场方向基本上与铋层结构化合物的c轴重合，所以可以防止铋层结构化合物表现出铁电性能充分显现出顺电特性。此外，由于氧化铋层（Bi 2 O 2）2+作为绝缘层发挥功能，所以能够提高电介质薄膜的绝缘性，能够使电介质薄膜变薄。因此，由于可以同时使薄膜电容器小而且容量大，因此薄膜电容器可以优选用作去耦电容器，特别是用于具有高工作频率的LSI的去耦电容器。

2. 发明授权

US06876536B2 Thin film capacitor and method for fabricating the same 有权
标题翻译：薄膜电容器及其制造方法
公开(公告)号：US06876536B2
公开(公告)日：2005-04-05
申请号：US10331140
申请日：2002-12-27
申请人： Yukio Sakashita , Kyung-Ku Choi
发明人： Yukio Sakashita , Kyung-Ku Choi
IPC分类号： H01G4/10 , H01G4/12 , H01G4/228 , H01G4/32 , H01G4/33 , H01L21/02 , H01L27/01 , H01L29/76
CPC分类号： H01G4/33 , H01G4/10 , H01G4/228 , H01L27/016 , H01L28/57 , H01L28/65
摘要： A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property. Further, a bismuth oxide layer (Bi2O2)2+ functions as an insulating layer, thereby improves the insulation property of the dielectric thin film while makes the thin film much thinner.
摘要翻译：一种薄膜电容器，包括第一电极结构体，第二电极结构体和设置在第一和第二电极结构体之间并且包含铋层结构化合物的电介质薄膜。与电介质薄膜接触的第一电极结构体的表面在[001]方向上取向。结果，电介质薄膜被天然地取向为使其c轴基本垂直于电极结构体。当在第一和第二电极结构体之间施加电压时，由于电场方向基本上与铋层结构化合物的c轴重合，所以可以防止铋层结构化合物表现出铁电性质，充分展现了顺电特性。此外，氧化铋层（Bi 2 O 2）2+充当绝缘层，从而提高电介质薄膜的绝缘性，同时使薄膜更薄。

3. 发明授权

US08525658B2 Interior tire power generation apparatus and tire monitoring system using the same 有权
标题翻译：内胎发电装置及使用其的轮胎监视系统
公开(公告)号：US08525658B2
公开(公告)日：2013-09-03
申请号：US12891582
申请日：2010-09-27
申请人： Yasutoshi Hirabayashi , Yukio Sakashita
发明人： Yasutoshi Hirabayashi , Yukio Sakashita
IPC分类号： B60C23/00 , G08B21/00 , H01L41/00 , H02N2/00
CPC分类号： B60C23/0411 , B60C23/0493 , H01L41/113 , H01L41/183 , H01L41/1878
摘要： An interior tire power generation apparatus includes a piezoelectric section having an inorganic piezoelectric body of a perovskite type oxide represented by General Formula (PX) below; a pair of electrodes for extracting an electric charge generated in the piezoelectric section when strained by an external force exerted on the tire; and an energy storage unit for storing the extracted electric charge. (Bix, A1-x) (By, C1-y)O3 (PX) where, A is an A-site element, other than Pb, with an average ionic valence of 2, B is a B-site element with an average ionic valence of 3, C is a B-site element with an average ionic valence of greater than 3, and each of A, B, and C is one or a plurality of types of metal elements. O is oxygen. B and C are of different compositions. 0.6≦x≦1.0, x-0.2≦y≦x.
摘要翻译：一种内胎发电装置，具有压电部件，具有由下述通式（PX）表示的钙钛矿型氧化物的无机压电体; 一对电极，用于当由于施加在轮胎上的外力而产生的压电部分产生的电荷; 以及用于存储所提取的电荷的能量存储单元。（Bix，A1-x）（By-C1-y）O3（PX）其中，A是除Pb以外的平均离子价为2的A位元素，B是具有平均值的B位元素离子价为3，C为平均离子价大于3的B位元素，A，B和C分别为一种或多种金属元素。 O是氧气。 B和C具有不同的组成。 0.6 @ x @ 1.0，x-0.2 @ y @ x。

4. 发明授权

US08434856B2 Perovskite oxide, process for producing the perovskite oxide, piezoelectric body, piezoelectric device, and liquid discharge device 有权
标题翻译：钙钛矿型氧化物，钙钛矿型氧化物的制造方法，压电体，压电元件及液体排出装置
公开(公告)号：US08434856B2
公开(公告)日：2013-05-07
申请号：US13040592
申请日：2011-03-04
申请人： Yukio Sakashita , Tsutomu Sasaki
发明人： Yukio Sakashita , Tsutomu Sasaki
IPC分类号： B41J2/045 , C01B13/00
CPC分类号： H01L41/1871 , B41J2/14233 , C04B35/2683 , C04B35/457 , C04B2235/3234 , C04B2235/3296 , C04B2235/3298 , C04B2235/762 , C04B2235/768 , H01L41/0805 , H01L41/1876 , H01L41/1878 , H01L41/316 , H01L41/43
摘要： A process for producing a piezoelectric oxide having a composition (A, B, C)(D, E, F)O3, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4), 0.98≦TF(P)≦1.01, (1) TF(ADO3)>1.0, (2) TF(BEO3)
摘要翻译：制备具有组成（A，B，C）（D，E，F）O 3的压电氧化物的方法，其中A，B，C，D，E和F各自表示一种或多种金属元素。确定组合物以满足条件（1），（2），（3）和（4），0.98@TF（P）@ 1.01，（1）TF（ADO3）> 1.0，（2）TF （BEO3）<1.0，和（3）TF（BEO3）

5. 发明授权

US08405285B2 Piezoelectric device, piezoelectric actuator having the same, liquid discharge apparatus, and power generating apparatus 有权
标题翻译：压电元件，具有该压电元件的压电致动器，液体排出装置和发电装置
公开(公告)号：US08405285B2
公开(公告)日：2013-03-26
申请号：US12795096
申请日：2010-06-07
申请人： Hiroyuki Kobayashi , Yukio Sakashita
发明人： Hiroyuki Kobayashi , Yukio Sakashita
IPC分类号： H01L41/187
CPC分类号： B41J2/14233 , B41J2202/03 , H01L41/0973 , H01L41/1136 , H01L41/1878
摘要： A piezoelectric device which includes a piezoelectric body having piezoelectricity and a pair of electrodes for applying an electric field to the piezoelectric body in a predetermined direction in which a piezoelectric strain constant d33 (pm/V) and a relative pemittivity ε33 of the piezoelectric body satisfy Formulae (1) and (2) below. This makes the piezoelectric device excellent both in transmission and reception capabilities and appropriate for use as a piezoelectric actuator, a sensor, an ultrasonic sensor, or a power generating device. 100 12√ε33 (2).
摘要翻译：一种压电装置，包括具有压电性的压电体和一对电极，用于沿压电体的预定方向向压电体施加电场，其中压电应变常数d33（pm / V）和相对介电常数等于压电身体满足下面的公式（1）和（2）。这使得压电装置在发送和接收能力方面均优异并且适合用作压电致动器，传感器，超声波传感器或发电装置。 100 <33（1500）（1）d33（pm / V）>12√e（33）（2）。

6. 发明授权

US08177995B2 Perovskite oxide, process for producing the perovskite oxide, and piezoelectric device 有权
标题翻译：钙钛矿型氧化物，钙钛矿型氧化物的制造方法以及压电元件
公开(公告)号：US08177995B2
公开(公告)日：2012-05-15
申请号：US12403116
申请日：2009-03-12
申请人： Hiroyuki Kobayashi , Yukio Sakashita
发明人： Hiroyuki Kobayashi , Yukio Sakashita
IPC分类号： C04B35/462 , H01L27/20
CPC分类号： B41J2/161 , B41J2/1642 , B41J2/1646 , B41J2202/03 , B41J2202/21 , H01L41/0973 , H01L41/1871 , H01L41/1878 , H01L41/316 , H01L41/319
摘要： A process for producing a piezoelectric oxide having a composition (Ba, Bi, A)(Ti, Fe, M)O3, where each of A and M represents one or more metal elements. The composition is determined so as to satisfy the conditions (1) and (2), 0.98≦TF(P)≦1.02, (1) TF(BiFeO3)
摘要翻译：制备具有组成（Ba，Bi，A）（Ti，Fe，M）O 3的压电氧化物的方法，其中A和M各自表示一种或多种金属元素。确定组合物满足条件（1）和（2），0.98＆nlE; TF（P）＆nlE; 1.02，（1）TF（BiFeO3）

7. 发明授权

US07997692B2 Perovskite oxide, process for producing the same, piezoelectric film, and piezoelectric device 有权
标题翻译：钙钛矿氧化物，其制造方法，压电薄膜和压电装置
公开(公告)号：US07997692B2
公开(公告)日：2011-08-16
申请号：US12523634
申请日：2008-01-18
申请人： Yukio Sakashita , Tsutomu Sasaki
发明人： Yukio Sakashita , Tsutomu Sasaki
IPC分类号： B41J2/045 , C01G23/00 , C01F17/00 , C01B19/00 , C04B35/00 , H01L41/187 , C23C14/00
CPC分类号： B41J2/14233 , C01G29/006 , C01G49/009 , C01G51/006 , C01G55/00 , C01P2002/34 , C01P2002/52 , C01P2002/72 , C01P2004/62 , C01P2006/40 , C04B35/16 , C04B35/18 , C04B35/26 , C04B35/2683 , C04B35/44 , C04B35/457 , C04B35/462 , C04B35/475 , C04B2235/3201 , C04B2235/3215 , C04B2235/3217 , C04B2235/3224 , C04B2235/3227 , C04B2235/3232 , C04B2235/3234 , C04B2235/3236 , C04B2235/3251 , C04B2235/3272 , C04B2235/3275 , C04B2235/3286 , C04B2235/3296 , C04B2235/3298 , C04B2235/3418 , C04B2235/76 , C04B2235/768 , C04B2235/787 , C04B2235/80 , C04B2235/81 , H01L41/0973 , H01L41/1878 , H01L41/316
摘要： A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98 1.0, and (2) TF(ACO3)
摘要翻译：制备具有由组成式A（B，C）O 3表示的组成并且满足条件（1），（2）和（3）的0.98

8. 发明授权

US07872402B2 Perovskite-oxide laminates, and piezoelectric devices, and liquid discharge devices containing the same 有权
标题翻译：钙钛矿型氧化物层叠体及压电元件，以及含有它们的液体排出装置
公开(公告)号：US07872402B2
公开(公告)日：2011-01-18
申请号：US12243701
申请日：2008-10-01
申请人： Hiroyuki Kobayashi , Yukio Sakashita , Tsutomu Sasaki
发明人： Hiroyuki Kobayashi , Yukio Sakashita , Tsutomu Sasaki
IPC分类号： H01L41/187
CPC分类号： B41J2/14233 , B41J2002/14258 , B41J2202/03 , H01L41/0805 , H01L41/0815 , H01L41/0973 , H01L41/1878
摘要： A perovskite-oxide lamination constituted by a substrate and one or tore first films of a first oxide of a perovskite type and one or more second films of a second oxide which are alternately formed over the substrate. The first oxide has a composition expressed as ABO3, the second oxide has a composition expressed as CDO3, each of A and C represents one or more A-site elements which are one or more metal elements, each of B and D represents one or more B-site elements which are one or more metal elements, O represents oxygen, and the second oxide is unable to be formed to have a perovskite crystal structure at normal pressure without a thickness limitation. The one or more first films and the one or more second films may contain inevitable impurities.
摘要翻译：一种钙钛矿氧化物层叠体，由基板和交替形成在基板上的第一氧化钙钙钛矿型氧化物和一种或多种第二氧化物膜的第一膜或第一膜构成。第一氧化物具有表示为ABO 3的组成，第二氧化物具有表示为CDO 3的组成，A和C各自表示作为一种或多种金属元素的一个或多个A位元素，B和D各自表示一个或多个作为一种或多种金属元素的B位元素，O表示氧，并且第二氧化物不能形成为在常压下具有钙钛矿晶体结构而没有厚度限制。一个或多个第一膜和一个或多个第二膜可能含有不可避免的杂质。

9. 发明申请

US20090295876A1 FERROELECTRIC OXIDE STRUCTURE, METHOD FOR PRODUCING THE STRUCTURE, AND LIQUID-DISCHARGE APPARATUS 审中-公开
标题翻译：电解氧化结构，生产结构的方法和液体放电装置
公开(公告)号：US20090295876A1
公开(公告)日：2009-12-03
申请号：US12473621
申请日：2009-05-28
申请人： Hiroyuki Kobayashi , Yukio Sakashita
发明人： Hiroyuki Kobayashi , Yukio Sakashita
IPC分类号： B41J2/045 , B32B3/00
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1642 , B41J2/1646 , B41J2202/21 , C23C26/00 , C23C30/00
摘要： A ferroelectric oxide structure includes a substrate and a ferroelectric thin-film deposited on the substrate. The ferroelectric thin-film has a thickness of greater than or equal to 200 nm and a tetragonal crystal system. The ferroelectric thin-film has (100) single-orientation crystal orientation.
摘要翻译：铁电氧化物结构包括沉积在基板上的基板和铁电薄膜。铁电薄膜的厚度大于等于200nm，四方晶系。铁电薄膜具有（100）单取向晶体取向。

10. 发明申请

US20060150893A1 Substrate for forming magnetic garnet single-crystal film, process for producing the same, optical device and process for producing the same 审中-公开
标题翻译：用于形成磁性石榴石单晶膜的基板，其制造方法，光学装置及其制造方法
公开(公告)号：US20060150893A1
公开(公告)日：2006-07-13
申请号：US10544099
申请日：2004-01-28
申请人： Kiyoshi Uchida , Yukio Sakashita , Atsushi Ohido
发明人： Kiyoshi Uchida , Yukio Sakashita , Atsushi Ohido
IPC分类号： C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B19/12 , C30B23/025 , C30B29/28
摘要： A method of producing a magnetic garnet single crystal film formation substrate 2 for growing a magnetic garnet single crystal film by liquid phase epitaxial growth is provided. First, a base substrate 10 composed of a garnet-based single crystal being unstable with a flux used for the liquid phase epitaxial growth is formed. Next, a buffer layer 11 composed of a garnet-based single crystal thin film formed at least on a crystal growing surface of said base substrate 10 and being stable with the flux is formed. When forming the buffer layer 11 on the base substrate 10, it is formed by a thin film formation method, such as sputtering, without heating the substrate 10 in a positive manner.
摘要翻译：提供一种通过液相外延生长生产磁性石榴石单晶膜的磁性石榴石单晶成膜基板2的制造方法。首先，形成由用于液相外延生长的焊剂不稳定的石榴石类单晶构成的基底基板10。接下来，形成由至少在所述基底基板10的晶体生长面上形成且与焊剂稳定的基于石榴石的单晶薄膜构成的缓冲层11。当在基底基板10上形成缓冲层11时，通过诸如溅射的薄膜形成方法形成，而不以积极的方式加热基板10。

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