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1. 发明授权

US08324509B2 Electronic component and manufacturing method thereof 有权
标题翻译：电子元器件及其制造方法
公开(公告)号：US08324509B2
公开(公告)日：2012-12-04
申请号：US12853629
申请日：2010-08-10
申请人： Takashi Ohtsuka , Kyung-Ku Choi , Tatsuo Namikawa , Hitoshi Yamaguchi
发明人： Takashi Ohtsuka , Kyung-Ku Choi , Tatsuo Namikawa , Hitoshi Yamaguchi
IPC分类号： H05K1/16
CPC分类号： H01L28/60 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L28/86 , H01L2224/04042 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30107 , H01L2924/00
摘要： The invention provides an electronic component and a manufacturing method thereof that: can allow electronic components to be mounted on an external substrate at a higher density than before; can adjust the height (level) of a terminal electrode as required and desired, thereby solving problems that would occur in the inspection of the conventional electronic components; and can also improve the yield in the mounting of electronic components, thereby achieving increased productivity. A capacitor 1, which is an electronic component, has: a first upper electrode 5a formed above a substrate 2; a first seat 10 and a second seat 11 which are formed adjacent to the first upper electrode 5a; passivation layers 6 and 8 that cover the first upper electrode 5a and the first and second seats 10 and 11; and a terminal electrode 9a formed above the first and second seats 10 and 11 and connected to the first upper electrode 5a via via-conductors Va and Vc which are formed through the passivation layers 6 and 8 respectively.
摘要翻译：本发明提供一种电子部件及其制造方法，其可以使电子部件以比以往更高的密度安装在外部基板上; 可以根据需要调整端子电极的高度（电平），从而解决在常规电子部件的检查中会发生的问题; 并且还可以提高电子部件的安装成品率，从而提高生产率。作为电子部件的电容器1具有：在基板2的上方形成的第一上部电极5a，与第一上部电极5a相邻形成的第一座椅10和第二座椅11; 覆盖第一上电极5a和第一座和第二座10和11的钝化层6和8; 以及形成在第一座椅10和第二座椅11上方的端子电极9a，并且分别经由通过钝化层6和8形成的通孔导体Va和Vc连接到第一上部电极5a。

2. 发明申请

US20110183208A1 NEGATIVE-ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, AND NEGATIVE ELECTRODE AND NONAQUEOUS ELECTROLYTE SECONDARY BATTERY USING THE SAME 审中-公开
标题翻译：用于非水电解质二次电池的负极电极活性材料，以及使用其的负极和非电解电解质二次电池
公开(公告)号：US20110183208A1
公开(公告)日：2011-07-28
申请号：US13079276
申请日：2011-04-04
申请人： Takashi OHTSUKA , Sumihito Ishida , Hiroaki Matsuda
发明人： Takashi OHTSUKA , Sumihito Ishida , Hiroaki Matsuda
IPC分类号： H01M4/58 , B05D5/12
CPC分类号： H01M4/58 , H01M4/13 , H01M4/139 , H01M4/366 , H01M4/485 , H01M4/625 , H01M10/052 , H01M2004/027
摘要： A negative-electrode active material for nonaqueous electrolyte secondary battery, comprising a silicon compound capable of inserting and extracting lithium ion, wherein the silicon compound contains silicon-hydrogen bonds and the silicon-hydrogen bonds are introduced into the compound by reduction of at least one compound selected from the group consisting of silicon oxide, silicon nitride and silicon carbide with hydrogen, and a negative electrode for nonaqueous electrolyte secondary battery having a layer containing the negative-electrode active material in the above arrangement formed on a current collector.
摘要翻译：一种非水电解质二次电池用负极活性物质，其含有能够插入和提取锂离子的硅化合物，其中所述硅化合物含有硅 - 氢键，并且所述硅 - 氢键通过还原至少一种选自氧化硅，氮化硅和碳化硅与氢的化合物，以及在集电体上形成有上述结构的含有负极活性物质的层的非水电解质二次电池用负极。

3. 发明授权

US07964319B2 Fuel cell in which proton conductive gel is used and manufacturing method thereof, and electric power generation method 有权
标题翻译：使用质子传导性凝胶的燃料电池及其制造方法以及发电方法
公开(公告)号：US07964319B2
公开(公告)日：2011-06-21
申请号：US12794266
申请日：2010-06-04
申请人： Takashi Ohtsuka , Tomoyuki Komori , Atsushi Omote , Yuji Zenitani
发明人： Takashi Ohtsuka , Tomoyuki Komori , Atsushi Omote , Yuji Zenitani
IPC分类号： H01M8/08
CPC分类号： H01M8/086 , H01M8/0293 , H01M2300/0008 , Y02P70/56
摘要： An object of the present invention is to provide a fuel cell that operates in a temperature range of not lower than 100° C., and a method for manufacturing such a fuel cell.The fuel cell of the present invention has a proton conductive gel, an anode electrode, and a cathode electrode, the proton conductor being sandwiched between the anode electrode and the cathode electrode, in which the proton conductive gel is composed of SnO2, NH3, H2O, and H3PO4, and provided that the molar ratio represented by NH3/SnO2 is X, and the molar ratio represented by P/Sn is Y, X is not less than 0.2 and not greater than 5, and Y is not less than 1.6 and not greater than 3.
摘要翻译：本发明的目的在于提供一种在不低于100℃的温度范围内工作的燃料电池及其制造方法。本发明的燃料电池具有质子传导性凝胶，阳极电极和阴极电极，质子导体夹在阳极电极和阴极电极之间，其中质子传导性凝胶由SnO 2，NH 3，H 2 O 和H 3 PO 4，并且假定由NH 3 / SnO 2表示的摩尔比为X，并且由P / Sn表示的摩尔比为Y，X不小于0.2且不大于5，Y不小于1.6，并且不大于3。

4. 发明申请

US20110044011A1 ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电子元器件及其制造方法
公开(公告)号：US20110044011A1
公开(公告)日：2011-02-24
申请号：US12853712
申请日：2010-08-10
申请人： Takashi OHTSUKA , Kyung-Ku Choi , Tatsuo Namikawa , Hitoshi Yamaguchi
发明人： Takashi OHTSUKA , Kyung-Ku Choi , Tatsuo Namikawa , Hitoshi Yamaguchi
IPC分类号： H05K7/00 , B32B38/04
CPC分类号： H01L28/40 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L28/55 , H01L2224/04042 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15788 , H01L2924/19041 , H01L2924/30107 , Y10T29/417 , Y10T156/1056 , H01L2924/00
摘要： The invention provides an electronic component and a manufacturing method thereof that can achieve an improved adhesion strength when the electronic component is solder-mounted onto an external substrate and can thereby obtain considerably improved electric properties and reliabilities, etc. An electronic component, which is a capacitor 1, has: a circuit element 5a formed on a substrate 2; an electrode layer 5b connected to the circuit element 5a; passivation layers 6 and 8 that cover the electrode layer 5b; and terminal electrodes 9a and 9b connected to the electrode layer 5b via via-conductors Va and Vb formed through the passivation layers 6 and 8, the terminal electrodes 9a and 9b being formed to cover the side wall of the passivation layers 6 and 8. Since the pad electrodes 9a and 9b are formed so as to cover the passivation layers 6 and 8 across their uppermost surfaces and side walls, the area of contact between the pad electrodes 9a and 9b and the solder for solder-mounting increases, and the capacitor 1 can consequently exhibit an improved adhesion strength.
摘要翻译：本发明提供一种电子部件及其制造方法，其能够在将电子部件焊接安装在外部基板上时实现提高的粘合强度，能够获得显着改善的电气性能和可靠性等。作为电子部件电容器1具有：形成在基板2上的电路元件5a; 连接到电路元件5a的电极层5b; 覆盖电极层5b的钝化层6和8; 以及通过经由钝化层6和8形成的通孔导体Va和Vb连接到电极层5b的端子电极9a和9b，端子电极9a和9b形成为覆盖钝化层6和8的侧壁。由于焊盘电极9a和9b形成为在其最上表面和侧壁上覆盖钝化层6和8，焊盘电极9a和9b与焊料焊接用焊料之间的接触面积增加，电容器1 因此可以显示出改进的粘合强度。

5. 发明申请

US20110042127A1 ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：电子元器件及其制造方法
公开(公告)号：US20110042127A1
公开(公告)日：2011-02-24
申请号：US12853629
申请日：2010-08-10
申请人： Takashi OHTSUKA , Kyung-Ku Choi , Tatsuo Namikawa , Hitoshi Yamaguchi
发明人： Takashi OHTSUKA , Kyung-Ku Choi , Tatsuo Namikawa , Hitoshi Yamaguchi
IPC分类号： H05K1/03 , B05D5/12
CPC分类号： H01L28/60 , H01L23/3171 , H01L23/3192 , H01L24/02 , H01L28/86 , H01L2224/04042 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01025 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01055 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/19041 , H01L2924/30107 , H01L2924/00
摘要： The invention provides an electronic component and a manufacturing method thereof that: can allow electronic components to be mounted on an external substrate at a higher density than before; can adjust the height (level) of a terminal electrode as required and desired, thereby solving problems that would occur in the inspection of the conventional electronic components; and can also improve the yield in the mounting of electronic components, thereby achieving increased productivity. A capacitor 1, which is an electronic component, has: a first upper electrode 5a formed above a substrate 2; a first seat 10 and a second seat 11 which are formed adjacent to the first upper electrode 5a; passivation layers 6 and 8 that cover the first upper electrode 5a and the first and second seats 10 and 11; and a terminal electrode 9a formed above the first and second seats 10 and 11 and connected to the first upper electrode 5a via via-conductors Va and Vc which are formed through the passivation layers 6 and 8 respectively.
摘要翻译：本发明提供一种电子部件及其制造方法，其可以使电子部件以比以往更高的密度安装在外部基板上; 可以根据需要调整端子电极的高度（电平），从而解决在常规电子部件的检查中会发生的问题; 并且还可以提高电子部件的安装成品率，从而提高生产率。作为电子部件的电容器1具有：在基板2的上方形成的第一上部电极5a，与第一上部电极5a相邻形成的第一座椅10和第二座椅11; 覆盖第一上电极5a和第一座和第二座10和11的钝化层6和8; 以及形成在第一座椅10和第二座椅11上方的端子电极9a，并且分别经由通过钝化层6和8形成的通孔导体Va和Vc连接到第一上部电极5a。

6. 发明授权

US07834419B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07834419B2
公开(公告)日：2010-11-16
申请号：US11522982
申请日：2006-09-19
申请人： Takashi Ohtsuka , Takashi Nakabayashi , Yoshiyuki Shibata
发明人： Takashi Ohtsuka , Takashi Nakabayashi , Yoshiyuki Shibata
IPC分类号： H01L29/00
CPC分类号： H01L28/75 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L21/31641 , H01L21/31645
摘要： A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.
摘要翻译：半导体器件包括通过在衬底上连续堆叠下电极，电容器电介质膜和上电极而形成的电容器。下电极包括形成在第一导电层上并具有比第一导电层更高的电阻率的第一导电层和第二导电层，并且电容器电介质膜形成为与下部电极的第二导电层接触电极。

7. 发明授权

US07763922B2 Semiconductor memory and method for manufacturing the same 失效
标题翻译：半导体存储器及其制造方法
公开(公告)号：US07763922B2
公开(公告)日：2010-07-27
申请号：US11152109
申请日：2005-06-15
申请人： Hideyuki Arai , Takashi Nakabayashi , Takashi Ohtsuka
发明人： Hideyuki Arai , Takashi Nakabayashi , Takashi Ohtsuka
IPC分类号： H01L31/062
CPC分类号： H01L27/10852 , H01L27/10811 , H01L27/10888 , H01L28/91
摘要： A capacitor of a semiconductor memory of the present invention includes: a lower electrode which covers the surface of a storage node hole from the bottom to at least one of the sidewalls up to a level lower than the top surface of a second interlayer insulating film; a capacitive insulating film which covers the lower electrode; and an upper electrode which covers the capacitive insulating film.
摘要翻译：本发明的半导体存储器的电容器包括：下电极，其从底部到至少一个侧壁覆盖存储节点孔的表面直到比第二层间绝缘膜的顶表面低的水平; 覆盖下电极的电容绝缘膜; 以及覆盖电容绝缘膜的上电极。

8. 发明申请

US20090244808A1 THIN-FILM CAPACITOR 审中-公开
标题翻译：薄膜电容器
公开(公告)号：US20090244808A1
公开(公告)日：2009-10-01
申请号：US12410825
申请日：2009-03-25
申请人： Takashi OHTSUKA , Nobuyuki OKUZAWA
发明人： Takashi OHTSUKA , Nobuyuki OKUZAWA
IPC分类号： H01G4/06
CPC分类号： H01G4/06 , H01G4/33
摘要： An object of the present invention is to restrain warpage in a thin-film trench capacitor. A thin-film capacitor includes a substrate, a dielectric film, and a pair of electrodes, and the dielectric film is provided along a concave-convex surface on which are formed a plurality of convex portions extending away from the substrate. The concave-convex surface forms a pattern having one or more divisions arranged in a plane parallel to the main plane of the substrate, and the convex portions are arranged in either parts of the divisions or other parts. At least some of the divisions have parts extending along the x axial direction, and two or more of the extending parts overlap each other and terminate at locations that are different from each other, as viewed from the y axial direction orthogonal to the x axial direction.
摘要翻译：本发明的目的是抑制薄膜沟槽电容器的翘曲。薄膜电容器包括基板，电介质膜和一对电极，并且电介质膜沿着凹凸表面设置，在凸形表面上形成有远离基板延伸的多个凸部。凹凸表面形成具有一个或多个分隔布置在平行于基板的主平面的平面中的图案，并且凸部布置在分割部分或其它部分的任一部分中。至少一些分段具有沿x轴方向延伸的部分，并且两个或更多个延伸部分彼此重叠并且在从与x轴方向正交的y轴方向观察时终止于彼此不同的位置。

9. 发明授权

US07291857B2 Non-volatile memory 失效
标题翻译：非易失性存储器
公开(公告)号：US07291857B2
公开(公告)日：2007-11-06
申请号：US10967222
申请日：2004-10-19
申请人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
发明人： Hideyuki Tanaka , Takashi Ohtsuka , Kiyoyuki Morita , Kiyoshi Morimoto
IPC分类号： H01L47/00
CPC分类号： H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/144 , H01L45/16 , H01L45/1625
摘要： A non-volatile memory (1) which comprises an insulating substrate (11) having a plurality of first electrodes (15) extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode (12) formed on one surface side of the substrate (11), and a recording layer (14) held between the first electrodes (15) and the second electrode (12) and variable in resistance value by electric pulses applied across the first electrodes (15) and the second electrode (12), the plurality of first electrodes (15) being electrically connected to the recording layer (14) in a region constituting a single memory cell (MC). The non-volatile memory (1) can be reduced in power consumption and has great freedom of design and high reliability.
摘要翻译：一种非易失性存储器（1），其包括绝缘基板（11），所述绝缘基板具有从所述基板的前表面延伸穿过其延伸到其后表面的多个第一电极（15），形成在一个表面上的第二电极基板（11）的一侧，以及保持在第一电极（15）和第二电极（12）之间的记录层（14），并且通过施加在第一电极（15）和第二电极（12），所述多个第一电极（15）在构成单个存储单元（MC）的区域中与记录层（14）电连接。非易失性存储器（1）可以降低功耗，并具有很大的设计自由度和高可靠性。

10. 发明授权

US07135736B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07135736B2
公开(公告)日：2006-11-14
申请号：US10616917
申请日：2003-07-11
申请人： Takashi Nishikawa , Takashi Ohtsuka
发明人： Takashi Nishikawa , Takashi Ohtsuka
IPC分类号： H01L29/788
CPC分类号： H01L21/28291 , H01L21/28273 , H01L29/78391
摘要： This specification relates to a semiconductor device that comprises a semiconductor substrate 11, a source region 12 and a drain region 13, which are formed on the semiconductor substrate 11 with a channel region 14 therebetween; a floating gate electrode 152 that is formed on the channel region 14 with a gate insulator film 151 therebetween; a ferroelectric film 154 that is formed on the floating gate electrode 152; and a control gate electrode 156 that is formed on the ferroelectric film 154, wherein intermediate insulator films 153 and 155 are formed between at least one of the pairs consisting of the floating gate electrode 152 and the ferroelectric film 154, and the ferroelectric film 154 and the control gate electrode 156, and the intermediate insulator films 153 and 155 are made of hafnium oxide that contains nitrogen atoms.
摘要翻译：本说明书涉及半导体器件，其包括在半导体衬底11上形成有沟道区域14的半导体衬底11，源极区12和漏极区13; 在沟道区域14上形成有栅极绝缘膜151的浮栅电极152; 形成在浮栅电极152上的铁电体膜154; 以及形成在铁电体膜154上的控制栅极电极156，其中，在由浮置栅极电极152和铁电体膜154构成的至少一对之间形成中间绝缘膜153,155，以及强电介质膜154和控制栅电极156和中间绝缘膜153,155由含有氮原子的氧化铪构成。

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