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1. 发明授权

US08345424B2 Optical interconnection device 有权
标题翻译：光互连设备
公开(公告)号：US08345424B2
公开(公告)日：2013-01-01
申请号：US12865780
申请日：2009-02-16
申请人： Mikio Oda , Tomotaka Ishida , Hisaya Takahashi , Hideyuki Ono , Jun Sakai , Takashi Ohtsuka , Arihide Noda , Hikaru Kouta
发明人： Mikio Oda , Tomotaka Ishida , Hisaya Takahashi , Hideyuki Ono , Jun Sakai , Takashi Ohtsuka , Arihide Noda , Hikaru Kouta
IPC分类号： H05K7/20
CPC分类号： H01L25/167 , G02B6/4201 , G02B6/4257 , G02B6/4266 , G02B6/4274 , H01L2924/0002 , H01L2924/15174 , H01L2924/15192 , H01L2924/00
摘要： Provided is an optical interconnection device in which a volume required for cooling is reduced. In the optical interconnection device, a plurality of optical modules (12) are arranged on a periphery of an LSI (11) electrically connected to an electric wiring board (10), and liquid cooling mechanisms (13, 14) are respectively placed on the LSI (11) and the optical modules (12). The plurality of optical modules (12) may be arranged only on a surface of the electric wiring board (10) where the LSI (11) is mounted, only on a surface opposite to the surface where the LSI (11) is mounted, or on both the same surface as and the opposite surface to the surface where the LSI (11) is mounted.
摘要翻译：提供一种其中冷却所需的体积减小的光学互连装置。在光互连装置中，在与电气布线板（10）电连接的LSI（11）的周围配置有多个光模块（12），液体冷却机构（13,14）分别置于 LSI（11）和光模块（12）。多个光学模块（12）可以仅布置在安装有LSI（11）的电气布线板（10）的仅在与LSI（11）的表面相反的表面上的表面上，或者在与安装LSI（11）的表面相同的表面上和相对的表面上。

2. 发明申请

US20100310960A1 FUEL CELL IN WHICH PROTON CONDUCTIVE GEL IS USED AND MANUFACTURING METHOD THEREOF, AND ELECTRIC POWER GENERATION METHOD 有权
标题翻译：使用导电凝胶的燃料电池及其制造方法，电力发电方法
公开(公告)号：US20100310960A1
公开(公告)日：2010-12-09
申请号：US12794266
申请日：2010-06-04
申请人： Takashi OHTSUKA , Tomoyuki KOMORI , Atsushi OMOTE , Yuji ZENITANI
发明人： Takashi OHTSUKA , Tomoyuki KOMORI , Atsushi OMOTE , Yuji ZENITANI
IPC分类号： H01M8/04 , H01M8/00 , H01M8/02
CPC分类号： H01M8/086 , H01M8/0293 , H01M2300/0008 , Y02P70/56
摘要： An object of the present invention is to provide a fuel cell that operates in a temperature range of not lower than 100° C., and a method for manufacturing such a fuel cell.The fuel cell of the present invention has a proton conductive gel, an anode electrode, and a cathode electrode, the proton conductor being sandwiched between the anode electrode and the cathode electrode, in which the proton conductive gel is composed of SnO2, NH3, H2O, and H3PO4, and provided that the molar ratio represented by NH3/SnO2 is X, and the molar ratio represented by P/Sn is Y, X is not less than 0.2 and not greater than 5, and Y is not less than 1.6 and not greater than 3.
摘要翻译：本发明的目的在于提供一种在不低于100℃的温度范围内工作的燃料电池及其制造方法。本发明的燃料电池具有质子传导性凝胶，阳极电极和阴极电极，质子导体夹在阳极电极和阴极电极之间，其中质子传导性凝胶由SnO 2，NH 3，H 2 O 和H 3 PO 4，并且假定由NH 3 / SnO 2表示的摩尔比为X，并且由P / Sn表示的摩尔比为Y，X不小于0.2且不大于5，Y不小于1.6，并且不大于3。

3. 发明申请

US20090026565A1 Optical Module 审中-公开
标题翻译：光模块
公开(公告)号：US20090026565A1
公开(公告)日：2009-01-29
申请号：US12223541
申请日：2007-02-02
申请人： Arihide Noda , Mikio Oda , Takashi Ohtsuka , Hisaya Takahashi , Hikaru Kouta , Jun Sakai
发明人： Arihide Noda , Mikio Oda , Takashi Ohtsuka , Hisaya Takahashi , Hikaru Kouta , Jun Sakai
IPC分类号： H01L31/0232 , C12Q1/68 , G01J1/00
CPC分类号： G02B6/4214 , G02B6/4232 , G02B6/4292 , H01L25/167 , H01L31/02002 , H01L2224/16225 , H01L2224/48091 , H01L2224/49109 , H01L2224/73253 , H01L2924/15192 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H05K1/184 , H05K3/3405 , H05K3/403 , H05K2201/10121 , H05K2201/10674 , H01L2924/00014 , H01L2924/00
摘要： The present invention includes: photoelectric conversion element 103 that converts electrical signals into optical signals and optical signals into electrical signals; and optical communication LSI 102 electrically connected to photoelectric conversion element 103. Also, the present invention includes electrical wiring substrate 101 including a plurality of electrodes 201 and 202 on which photoelectric conversion element 103 and optical communication LSI 102 are mounted by flip-chip attachment and a plurality of wiring layers 101a, 101b and 101c electrically connecting respective electrodes 201 and 202, wiring layers 101a, 101b and 101c being provided at an upper surface, a lower surface and an inner portion of electrical wiring substrate 101, respectively. Also, electrodes 201 and 202 to which photoelectric conversion element 103 is bonded are provided at a side surface of electrical wiring substrate 101.
摘要翻译：本发明包括：将电信号转换为光信号和光信号的电信号的光电转换元件103; 以及与光电转换元件103电连接的光通信LSI 102.另外，本发明包括电子布线基板101，其包括多个电极201和202，其上通过倒装芯片附接安装光电转换元件103和光通信LSI102，电连接各个电极201和202的多个布线层101a，101b和101c，布线层101a，101b和101c分别设置在电布线基板101的上表面，下表面和内部。而且，在电配线基板101的侧面设置与光电转换元件103接合的电极201和202。

4. 发明申请

US20080248388A1 ELECTRODE FOR ELECTROCHEMICAL ELEMENT AND ELECTROCHEMICAL ELEMENT USING THE SAME 审中-公开
标题翻译：电化学元件用电极及其电化学元件
公开(公告)号：US20080248388A1
公开(公告)日：2008-10-09
申请号：US12098126
申请日：2008-04-04
申请人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
发明人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
IPC分类号： H01M4/24 , H01M4/38
CPC分类号： H01M4/70 , H01M4/0404 , H01M4/134 , H01M10/0525 , H01M2004/027
摘要： The invention presents an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising a current collector forming a concave portion and a convex portion at least on one side, and a columnar body including an active material formed on the convex portion of the current collector, in which the columnar body covers at least a part of respective sides of the convex portion. By this configuration, an electrode for an electrochemical element of long life and excellent reliability is realized.
摘要翻译：本发明提出了一种用于电化学元件的用于可逆地插入和提取锂离子的电极，包括至少在一侧形成凹部和凸部的集电体，以及包括形成在凸部上的活性材料的柱状体柱状体覆盖凸部的各侧的至少一部分的集电体。通过这种构造，实现了长寿命和高可靠性的电化学元件用电极。

5. 发明申请

US20080248189A1 MANUFACTURING METHOD OF ELECTRODE FOR ELECTROCHEMICAL ELEMENT 审中-公开
标题翻译：电化学元件电极的制造方法
公开(公告)号：US20080248189A1
公开(公告)日：2008-10-09
申请号：US12061479
申请日：2008-04-02
申请人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
发明人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
IPC分类号： H01M4/04
CPC分类号： H01M4/70 , H01M4/0423 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/364 , H01M10/0525
摘要： The invention presents a manufacturing method of an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising; forming a concave portion and a convex portion at least on one side of a current collector, preparing a raw material containing a element for composing an active material, introducing a specified supply amount of the raw material and a carrier gas into a film forming device to form a plasma, and injecting the plasma of the raw material on the current collector, in which the active material is grown on the convex portion of the current collector, and a columnar body is formed by covering at least a part of respective sides of the convex portion.
摘要翻译：本发明提出了用于电化学元件的电极的制造方法，用于可逆地插入和提取锂离子，包括：在集电体的至少一侧形成凹部和凸部，准备含有构成活性物质的元素的原料，将规定的原料和载气的供给量引入成膜装置，形成等离子体，并且将原料的等离子体注入到集电体上，其中活性材料在集电体的凸部上生长，并且通过覆盖所述集电体的两侧的至少一部分来形成柱状体凸部。

6. 发明授权

US07394090B2 Non-volatile memory and the fabrication method 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US07394090B2
公开(公告)日：2008-07-01
申请号：US11798364
申请日：2007-05-14
申请人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
发明人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , G11C14/009 , H01L27/1104 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要翻译：一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。这种非易失性存储器以低成本实现高集成度。

7. 发明申请

US20070210362A1 Non-volatile memory and the fabrication method 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20070210362A1
公开(公告)日：2007-09-13
申请号：US11798364
申请日：2007-05-14
申请人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
发明人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： H01L27/11
CPC分类号： G11C13/0004 , G11C14/009 , H01L27/1104 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要翻译：一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。这种非易失性存储器以低成本实现高集成度。

8. 发明申请

US20070131997A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070131997A1
公开(公告)日：2007-06-14
申请号：US11522982
申请日：2006-09-19
申请人： Takashi Ohtsuka , Takashi Nakabayashi , Yoshiyuki Shibata
发明人： Takashi Ohtsuka , Takashi Nakabayashi , Yoshiyuki Shibata
IPC分类号： H01L29/94
CPC分类号： H01L28/75 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L21/31641 , H01L21/31645
摘要： A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.
摘要翻译：半导体器件包括通过在衬底上连续堆叠下电极，电容器电介质膜和上电极而形成的电容器。下电极包括形成在第一导电层上并具有比第一导电层更高的电阻率的第一导电层和第二导电层，并且电容器电介质膜形成为与下部电极的第二导电层接触电极。

9. 发明授权

US07206217B2 Non-volatile flip flop 失效
标题翻译：非易失性触发器
公开(公告)号：US07206217B2
公开(公告)日：2007-04-17
申请号：US10754058
申请日：2004-01-09
申请人： Takashi Ohtsuka , Hideyuki Tanaka
发明人： Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： G11C11/40
CPC分类号： G11C14/0072 , G11C8/16 , G11C13/0004 , G11C14/009 , H01L21/28291 , H01L27/101 , H01L27/11 , H03K3/356008
摘要： A non-volatile flip flop according to the invention comprising: a flip flop section (4) having a pair of memory nodes (5, 6) for storing a pair of inverse logic data elements; and a pair of non-volatile resistance change elements (11, 12) which are connected to the pair of memory nodes (5, 6) through switching elements (9, 10) respectively and the resistances of which vary so as to be retainable, wherein, in a store operation, the resistances of the pair of non-volatile resistance change elements (11, 12) can be varied according to the respective potentials of the pair of memory nodes (5, 6) and, in a recall operation, the pair of memory nodes (5, 6) can be placed at potentials respectively according to the difference in resistance between the pair of non-volatile resistance change elements (11, 12).
摘要翻译：根据本发明的非易失性触发器包括：触发器部分（4），具有用于存储一对反逻辑数据元素的一对存储器节点（5,6）; 以及一对非易失性电阻变化元件（11,12），它们分别通过开关元件（9,10）连接到一对存储器节点（5,6），并且其电阻变化以便保持，其特征在于，在存储操作中，所述一对非易失性电阻变化元件（11,12）的电阻可以根据所述一对存储器节点（5,6）的各自的电位而变化，并且在回调操作中，可以根据所述一对非易失性电阻变化元件（11,12）之间的电阻差分别将所述一对存储器节点（5,6）置于电位上。

10. 发明申请

US20050206421A1 Nonvolatile flip-flop circuit and method of driving the same 有权
标题翻译：非易失性触发电路及其驱动方法
公开(公告)号：US20050206421A1
公开(公告)日：2005-09-22
申请号：US11080454
申请日：2005-03-16
申请人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
发明人： Takashi Nishikawa , Kenji Toyoda , Takashi Ohtsuka
IPC分类号： G11C11/22 , H03K3/356 , H03K3/289
CPC分类号： H03K3/356008 , G11C11/22
摘要： The present invention provides a method of driving a nonvolatile flip-flop circuit comprising the following steps of: a data hold step of holding an input data signal D utilizing polarization of a ferroelectric material of a ferroelectric gate transistor (601) when the data signal D is input while a first clocked inverter (604), a second clocked inverter (603), and a third switching element (602) are turned on and a first switching element (605), a second switching element (607), and a third clocked inverter (608) are turned off; and a data output step of outputting an output signal Q (−Q) based on the held data signal D placing the first clocked inverter (604), the second clocked inverter (603), and the third switching element (602) in the OFF state and placing the first switching element (605), the second switching element (607), and the third clocked inverter (608) in the ON state so as to interrupt an input of a data signal and maintain a polarization state of the ferroelectric material of the ferroelectric gate transistor (601).
摘要翻译：本发明提供了一种驱动非易失性触发电路的方法，包括以下步骤：数据保持步骤，当数据信号D（D）被利用时，利用铁电栅极晶体管（601）的铁电材料的极化来保持输入数据信号D 在第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）导通时，第一开关元件（605），第二开关元件（607）和第三开关元件时钟反相器（608）关闭; 以及数据输出步骤，基于将第一时钟反相器（604），第二时钟反相器（603）和第三开关元件（602）放置在OFF中的保持数据信号D输出输出信号Q（-Q）状态，并且将第一开关元件（605），第二开关元件（607）和第三时钟反相器（608）置于导通状态，以便中断数据信号的输入并保持铁电材料的极化状态的铁电栅极晶体管（601）。

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