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1. 发明申请

US20050051089A1 Plasma processing apparatus 审中-公开
公开(公告)号：US20050051089A1
公开(公告)日：2005-03-10
申请号：US10968249
申请日：2004-10-20
申请人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
发明人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.

2. 发明授权

US06837937B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06837937B2
公开(公告)日：2005-01-04
申请号：US10228048
申请日：2002-08-27
申请人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
发明人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.
摘要翻译：在减压气氛中用于等离子体处理的常规等离子体处理装置需要作为消耗品频繁地代替诸如地球构件的部件，因为绝缘处理层和衬底本身由于等离子体和杂质而被减薄在这些变薄的材料中扩散到等离子体中，导致对诸如晶片的样品的不利影响，以及由于等离子体而导致的绝缘处理层的变薄，并且导致绝缘处理层的变薄的电致效应导致了等离子体。本发明通过使用由主要由氧化铝组成的焙烧材料形成的导电陶瓷，用于在等离子体处理装置中的等离子体处理装置中用于待处理样品例如晶片的减压气氛。

3. 发明授权

US06897403B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US06897403B2
公开(公告)日：2005-05-24
申请号：US10378601
申请日：2003-03-05
申请人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
发明人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01L21/687 , B23K9/00
CPC分类号： H01L21/6875 , H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.
摘要翻译：提供了能够更精确地处理工件的表面的等离子体处理装置。用于在样品和样品台之间提供气体以产生用于处理样品的等离子体的等离子体处理装置包括调节装置，用于改变供给到样品的中心侧的压力和供给到外周的气体的压力作为样品进行的处理。

4. 发明授权

US06664738B2 Plasma processing apparatus 有权
公开(公告)号：US06664738B2
公开(公告)日：2003-12-16
申请号：US10083381
申请日：2002-02-27
申请人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
发明人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
IPC分类号： H01J724
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

5. 发明授权

US06235146B1 Vacuum treatment system and its stage 有权
标题翻译：真空处理系统及其阶段
公开(公告)号：US06235146B1
公开(公告)日：2001-05-22
申请号：US09313253
申请日：1999-05-18
申请人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
发明人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
IPC分类号： H01L2100
CPC分类号： H01L21/67023 , H01J2237/2001 , Y10S156/914
摘要： A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.
摘要翻译：具有静电吸引装置的阶段适用于在真空处理系统中在高温下进行晶片处理。在具有设置在处理室中的阶段的真空处理系统中，其在低压气氛中将物体静电吸引到工作台上，并且通过加热工作台在高温下处理物体，所述工作台的电极构件由钛制成或者在电极部件上形成钛合金和静电吸引用的电介质膜。为了牢固地结合钛和氧化铝陶瓷，期望在材料之间夹着镍合金（Ni-Al）。

6. 发明申请

US20060168844A1 Vacuum processing apparatus and vacuum processing method 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20060168844A1
公开(公告)日：2006-08-03
申请号：US11068804
申请日：2005-03-02
申请人： Manabu Edamura , Akitaka Makino , Motohiko Yoshigai , Takanori Nakatsuka , Susumu Tauchi
发明人： Manabu Edamura , Akitaka Makino , Motohiko Yoshigai , Takanori Nakatsuka , Susumu Tauchi
IPC分类号： F26B13/30 , G05D16/00 , F26B21/06
CPC分类号： G05D16/2066
摘要： The downtime of a vacuum processing apparatus due to wet cleaning is reduced. In a vacuum processing apparatus that requires aging for its chamber or process container after vacuum evacuation of the apparatus and before actual processing of a workpiece, when the chamber has been opened to atmosphere for the purpose of wet cleaning or component replacement, the apparatus comprises a high precision absolute pressure gauge for use in processing, a wide range gauge capable of measuring a wide range of pressures, and a controller, wherein the controller uses a pressure trend during vacuum evacuation to determine whether the vacuum evacuation is satisfactory, and starts aging upon determining that the vacuum evacuation is satisfactory even if the actual pressure is not below a prescribed value. The controller determines relationship between an apparent flow rate (leak rate) measured by the absolute pressure gauge when the chamber is vacuum sealed, and a chamber pressure measured by the wide range gauge, and then measures only the pressure to determine whether a baseline leak rate is reached.
摘要翻译：减少了由于湿清洗而造成的真空处理装置的停机时间。在真空处理装置中，在对设备进行真空抽真空之后并且在实际处理工件之前需要对其室或处理容器进行老化的情况下，当室已经被打开到大气中以进行湿式清洁或部件更换时，该装置包括：用于加工的高精度绝对压力表，可测量宽范围压力的宽范围计量器和控制器，其中控制器在真空抽真空中使用压力趋势，以确定真空抽气是否令人满意，并开始老化确定即使实际压力不低于规定值，真空排气也令人满意。控制器确定当室被真空密封时由绝对压力表测量的表观流量（泄漏率）与由宽范围量规测量的室压力之间的关系，然后仅测量压力以确定基线泄漏率到达了。

7. 发明授权

US06838833B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06838833B2
公开(公告)日：2005-01-04
申请号：US10670288
申请日：2003-09-26
申请人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
发明人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01J7/24
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
摘要翻译：一种等离子体处理装置，其具有控制电极块的温度以控制半导体晶片的温度的系统的保持台。电极块在其内侧和外侧设置有至少第一和第二独立温度控制器，并且在第一和第二温度控制器之间的电极块中设置用于抑制热传递的狭缝。

8. 发明授权

US07194821B2 Vacuum processing apparatus and vacuum processing method 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US07194821B2
公开(公告)日：2007-03-27
申请号：US11068804
申请日：2005-03-02
申请人： Manabu Edamura , Akitaka Makino , Motohiko Yoshigai , Takanori Nakatsuka , Susumu Tauchi
发明人： Manabu Edamura , Akitaka Makino , Motohiko Yoshigai , Takanori Nakatsuka , Susumu Tauchi
IPC分类号： F26B7/00
CPC分类号： G05D16/2066
摘要： The downtime of a vacuum processing apparatus due to wet cleaning is reduced. In a vacuum processing apparatus that requires aging for its chamber or process container after vacuum evacuation of the apparatus and before actual processing of a workpiece, when the chamber has been opened to atmosphere for the purpose of wet cleaning or component replacement, the apparatus comprises a high precision absolute pressure gauge for use in processing, a wide range gauge capable of measuring a wide range of pressures, and a controller, wherein the controller uses a pressure trend during vacuum evacuation to determine whether the vacuum evacuation is satisfactory, and starts aging upon determining that the vacuum evacuation is satisfactory even if the actual pressure is not below a prescribed value. The controller determines relationship between an apparent flow rate (leak rate) measured by the absolute pressure gauge when the chamber is vacuum sealed, and a chamber pressure measured by the wide range gauge, and then measures only the pressure to determine whether a baseline leak rate is reached.
摘要翻译：减少了由于湿清洗而造成的真空处理装置的停机时间。在真空处理装置中，在对设备进行真空抽真空之后并且在实际处理工件之前需要对其室或处理容器进行老化的情况下，当室已经被打开到大气中以进行湿式清洁或部件更换时，该装置包括：用于加工的高精度绝对压力表，可测量宽范围压力的宽范围计量器和控制器，其中控制器在真空抽真空中使用压力趋势，以确定真空抽气是否令人满意，并开始老化确定即使实际压力不低于规定值，真空排气也令人满意。控制器确定当室被真空密封时由绝对压力表测量的表观流量（泄漏率）与由宽范围量规测量的室压力之间的关系，然后仅测量压力以确定基线泄漏率到达了。

9. 发明申请

US20080020495A1 SEMICONDUCTOR FABRICATING APPARATUS WITH FUNCTION OF DETERMINING ETCHING PROCESSING STATE 有权
标题翻译：具有确定蚀刻加工状态功能的半导体制造装置
公开(公告)号：US20080020495A1
公开(公告)日：2008-01-24
申请号：US11840514
申请日：2007-08-17
申请人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
发明人： Tatehito Usui , Motohiko Yoshigai , Kazuhiro Jyouo , Tetsuo Ono
IPC分类号： H01L21/00
CPC分类号： H01J37/32935 , H01L21/67069 , H01L21/67253
摘要： A semiconductor fabricating method including: placing the semiconductor wafer having a film thereon inside of a chamber; generating plasma; detecting a quantity of interference lights for each of at least two wavelengths obtained from a surface of the wafer for a predetermined time period during the etching of the wafer; detecting a first time point at which the detected quantity of interference lights for one of the two wavelengths becomes a maximum and a second time point at which the detected quantity of interference lights for the other wavelength becomes a minimum; determining a state of etching based on a result of comparing a predetermined value with an interval between the first and second time points, wherein both time points are detected by using outputs of a detector for detecting a quantity of the interference lights; and controlling etching in accordance with the determining.
摘要翻译：一种半导体制造方法，包括：将其上具有膜的半导体晶片放置在室内; 产生等离子体在晶片的蚀刻期间，在从晶片表面获得的每个至少两个波长的预定时间段内检测干涉光量; 检测所述检测到的两个波长中的一个波长的干扰光的检测量成为最大的第一时间点和所述其他波长的所检测的干涉光量成为最小的第二时间点; 基于将预定值与第一和第二时间点之间的间隔进行比较的结果来确定蚀刻状态，其中通过使用用于检测干涉光量的检测器的输出来检测两个时间点; 以及根据该确定来控制蚀刻。

10. 发明申请

US20070134922A1 Plasma etching method 失效
标题翻译：等离子蚀刻法
公开(公告)号：US20070134922A1
公开(公告)日：2007-06-14
申请号：US11354919
申请日：2006-02-16
申请人： Masahito Mori , Toshiaki Nishida , Naoshi Itabashi , Motohiko Yoshigai , Hideyuki Kazumi , Kazutami Tago
发明人： Masahito Mori , Toshiaki Nishida , Naoshi Itabashi , Motohiko Yoshigai , Hideyuki Kazumi , Kazutami Tago
IPC分类号： H01L21/302
CPC分类号： H01L21/32136 , H01L21/28123 , H01L21/31138 , H01L21/32137 , H01L21/823828 , H01L21/823842 , H01L21/823878 , H01L21/84 , H01L22/26 , H01L29/66795
摘要： An etching technique capable of applying etching at high selectivity to a transition metal element-containing electrode material layer which is formed on or above a dielectric material layer made of a high-dielectric-constant or “high-k” insulator is provided. To this end, place a workpiece on a lower electrode located within a vacuum processing vessel. The workpiece has a multilayer structure of an electrode material layer which contains therein a transition metal element and a dielectric material layer made of high-k insulator. Then, while introducing a processing gas into the vacuum processing vessel, high-frequency power is applied to inside of the vacuum processing vessel, thereby performing plasma conversion of the introduced processing gas so that the workpiece is etched at its surface. When etching the electrode material layer, an HCl gas is supplied as the processing gas.
摘要翻译：提供一种能够以高选择性对在由高介电常数或“高k”绝缘体制成的电介质材料层上形成的含过渡金属元素的电极材料层进行蚀刻的蚀刻技术。为此，将工件放置在位于真空处理容器内的下电极上。工件具有电极材料层的多层结构，其中包含过渡金属元件和由高k绝缘体制成的电介质材料层。然后，在将真空处理容器内的处理气体导入真空处理容器的内部的同时，向真空处理容器的内部施加高频电力，进行等离子体转换，使工件在其表面被蚀刻。当蚀刻电极材料层时，作为处理气体供给HCl气体。

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