专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06897403B2 Plasma processing method and plasma processing apparatus 失效
标题翻译：等离子体处理方法和等离子体处理装置
公开(公告)号：US06897403B2
公开(公告)日：2005-05-24
申请号：US10378601
申请日：2003-03-05
申请人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
发明人： Ryujiro Udo , Masatsugu Arai , Motohiko Yoshigai , Masanori Kadotani
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01L21/687 , B23K9/00
CPC分类号： H01L21/6875 , H01J37/32431 , H01J2237/2001 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus capable of processing the surface of a workpiece more precisely is provided. The plasma processing apparatus for supplying a gas between a sample and a sample table to generate plasma for processing the sample, comprises an adjusting device for changing a pressure supplied to a central side of the sample and a pressure of the gas supplied to an outer peripheral side as processing of the sample progresses.
摘要翻译：提供了能够更精确地处理工件的表面的等离子体处理装置。用于在样品和样品台之间提供气体以产生用于处理样品的等离子体的等离子体处理装置包括调节装置，用于改变供给到样品的中心侧的压力和供给到外周的气体的压力作为样品进行的处理。

2. 发明授权

US06664738B2 Plasma processing apparatus 有权
公开(公告)号：US06664738B2
公开(公告)日：2003-12-16
申请号：US10083381
申请日：2002-02-27
申请人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
发明人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
IPC分类号： H01J724
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： There is provided a plasmar processing apparatus capable of positively controlling the temperature distribution of a semiconductor wafer during etching processing in a clear state, wherein an electrode block is provided with independent slits as coolant flow paths on the inner and outer peripheries and, at the same time, between these slits is formed a slit for suppressing heat transfer between the inner and outer peripheries, and owing to this slit for suppressing heat transfer, a uniform temperature in the electrode block is suppressed and thus it is possible to obtain an arbitrary independent temperature in the plane of the electrode block and positive and clear control of temperature distribution patterns can be performed.

3. 发明授权

US06838833B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US06838833B2
公开(公告)日：2005-01-04
申请号：US10670288
申请日：2003-09-26
申请人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
发明人： Masatsugu Arai , Ryujiro Udo , Naoyuki Tamura , Masanori Kadotani , Motohiko Yoshigai
IPC分类号： H01J37/32 , H01L21/00 , H01L21/683 , H01J7/24
CPC分类号： H01L21/67109 , H01J37/32724 , H01J2237/2001 , H01L21/6833
摘要： A plasma processing apparatus provided with a holding stage of a system in which a temperature of an electrode block is controlled so as to control the temperature of a semiconductor wafer. The electrode block is provided with at least first and second independent temperature controllers on inner and outer sides thereof, and a slit for suppressing heat transfer is provided in the electrode block between the first and second temperature controllers.
摘要翻译：一种等离子体处理装置，其具有控制电极块的温度以控制半导体晶片的温度的系统的保持台。电极块在其内侧和外侧设置有至少第一和第二独立温度控制器，并且在第一和第二温度控制器之间的电极块中设置用于抑制热传递的狭缝。

4. 发明授权

US07303998B2 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US07303998B2
公开(公告)日：2007-12-04
申请号：US11002265
申请日：2004-12-03
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： H01L21/302
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

5. 发明申请

US20080121344A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080121344A1
公开(公告)日：2008-05-29
申请号：US12023874
申请日：2008-01-31
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： C23F1/00 , C23C16/513
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

6. 发明申请

US20050051089A1 Plasma processing apparatus 审中-公开
公开(公告)号：US20050051089A1
公开(公告)日：2005-03-10
申请号：US10968249
申请日：2004-10-20
申请人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
发明人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.

7. 发明申请

US20050242060A1 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US20050242060A1
公开(公告)日：2005-11-03
申请号：US11002265
申请日：2004-12-03
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46 , C23F1/00 , H01L21/00
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.
摘要翻译：一种用于通过减小处理室内的压力来处理样品的等离子体处理方法，包括将样品安装在设置在处理室中的样本保持器上，以及使用在样品架上方的处理室中产生的等离子体进行处理，同时为热传递到安装有样品的样品保持器的表面与样品的后表面之间的空间。样品保持器在样品安装的表面具有多个基本环形的凹陷部分。设置在样品保持架的中心部分相对于外周部分的凹陷部分和样品之间的空间中的压力被设定为低于外周部分的凹陷部分和样品之间的空间中的压力。

8. 发明申请

US20050051098A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050051098A1
公开(公告)日：2005-03-10
申请号：US10655046
申请日：2003-09-05
申请人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
发明人： Tooru Aramaki , Tsunehiko Tsubone , Ryujiro Udo , Motohiko Yoshigai , Takashi Fujii
IPC分类号： C23C16/00 , C23C16/458 , C23C16/46 , C23F1/00 , H01L21/00
CPC分类号： C23C16/4581 , C23C16/4586 , C23C16/46 , H01J2237/2001 , H01L21/67109 , H01L21/6719
摘要： A plasma processing apparatus capable of processing a sample with high precision by adjusting the temperature of a wafer in a wide range is provided. The plasma processing apparatus for processing a sample with a plasma generated by using a gas has: a processing chamber having an inner space reduced in pressure; a sample holder on which the sample is placed, the sample holder being disposed in the processing chamber; and a plurality of openings through which the gas is introduced into the processing chamber, the plural openings being located above the sample holder, wherein the sample holder on which the sample is placed has: ring-shaped projecting portions disposed concentrically on a surface of the sample holder to have respective surfaces thereof in contact with a surface of the sample and partition a space between the surface of the sample and the surface of the sample holder into a plurality of regions; a first opening located in a first region, which is the circumferentially outermost one of the plural regions, to introduce a gas for heat transfer therethrough; and a second opening located in a second region, which is internal of the circumferentially outermost region, to allow the gas in the region to flow out therethrough.
摘要翻译：提供了能够通过在宽范围内调整晶片的温度来高精度地处理样品的等离子体处理装置。用于通过使用气体产生的等离子体处理样品的等离子体处理装置具有：具有减小的内部空间的处理室; 其上放置样品的样品架，所述样品架设置在所述处理室中; 以及多个开口，通过该开口将气体引入到处理室中，多个开口位于样品保持器上方，其中放置样品的样品保持器具有：同心地设置在样品保持器的表面上的环形突出部分样品保持器，其各自的表面与样品的表面接触，并将样品表面和样品保持器的表面之间的空间分隔成多个区域; 第一开口，位于第一区域中，该第一区域是多个区域中的周向最外面的一个，以引入用于热传递的气体; 以及位于周向最外侧区域内部的第二区域中的第二开口，以允许该区域中的气体流出。

9. 发明授权

US06837937B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06837937B2
公开(公告)日：2005-01-04
申请号：US10228048
申请日：2002-08-27
申请人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
发明人： Susumu Tauchi , Masanori Kadotani , Muneo Furuse , Motohiko Yoshigai
IPC分类号： C23C16/44 , H01J37/32 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32458 , C23C16/4404 , H01J37/32477
摘要： It is required for the conventional plasma processing apparatus used for plasma processing in a reduced pressure atmosphere to replace the component parts such as earth member frequently as the expendable supplies because an insulation-processed layer and the substrate itself are thinned due to plasma and impurities contained in these thinned materials diffuse into plasma to result in adverse effect on a sample such as wafer, and thinning of the insulation-processed layer due to plasma and resultant electrical effect of the thinning of the insulation-processed layer cause the change of the state of plasma. The invention solves the problem by using electrically conductive ceramic that is formed of a baked material mainly composed of alumina for component parts of the apparatus in the plasma processing apparatus used for plasma processing of an sample to be processed such as wafer in a reduced pressure atmosphere.
摘要翻译：在减压气氛中用于等离子体处理的常规等离子体处理装置需要作为消耗品频繁地代替诸如地球构件的部件，因为绝缘处理层和衬底本身由于等离子体和杂质而被减薄在这些变薄的材料中扩散到等离子体中，导致对诸如晶片的样品的不利影响，以及由于等离子体而导致的绝缘处理层的变薄，并且导致绝缘处理层的变薄的电致效应导致了等离子体。本发明通过使用由主要由氧化铝组成的焙烧材料形成的导电陶瓷，用于在等离子体处理装置中的等离子体处理装置中用于待处理样品例如晶片的减压气氛。

10. 发明授权

US06235146B1 Vacuum treatment system and its stage 有权
标题翻译：真空处理系统及其阶段
公开(公告)号：US06235146B1
公开(公告)日：2001-05-22
申请号：US09313253
申请日：1999-05-18
申请人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
发明人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
IPC分类号： H01L2100
CPC分类号： H01L21/67023 , H01J2237/2001 , Y10S156/914
摘要： A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.
摘要翻译：具有静电吸引装置的阶段适用于在真空处理系统中在高温下进行晶片处理。在具有设置在处理室中的阶段的真空处理系统中，其在低压气氛中将物体静电吸引到工作台上，并且通过加热工作台在高温下处理物体，所述工作台的电极构件由钛制成或者在电极部件上形成钛合金和静电吸引用的电介质膜。为了牢固地结合钛和氧化铝陶瓷，期望在材料之间夹着镍合金（Ni-Al）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式