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1. 发明授权

US06235146B1 Vacuum treatment system and its stage 有权
标题翻译：真空处理系统及其阶段
公开(公告)号：US06235146B1
公开(公告)日：2001-05-22
申请号：US09313253
申请日：1999-05-18
申请人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
发明人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
IPC分类号： H01L2100
CPC分类号： H01L21/67023 , H01J2237/2001 , Y10S156/914
摘要： A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.
摘要翻译：具有静电吸引装置的阶段适用于在真空处理系统中在高温下进行晶片处理。在具有设置在处理室中的阶段的真空处理系统中，其在低压气氛中将物体静电吸引到工作台上，并且通过加热工作台在高温下处理物体，所述工作台的电极构件由钛制成或者在电极部件上形成钛合金和静电吸引用的电介质膜。为了牢固地结合钛和氧化铝陶瓷，期望在材料之间夹着镍合金（Ni-Al）。

2. 发明授权

US5781400A Electrostatically attracting electrode and a method of manufacture thereof 失效
标题翻译：静电吸引电极及其制造方法
公开(公告)号：US5781400A
公开(公告)日：1998-07-14
申请号：US710514
申请日：1996-09-18
申请人： Kazue Takahashi , Youichi Itou , Saburo Kanai , Seiichiro Kanno
发明人： Kazue Takahashi , Youichi Itou , Saburo Kanai , Seiichiro Kanno
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： The present invention allows the electrostatically attracting electrode, whose size corresponds to large-diameter wafers, to be fabricated easily and with precision. The first electrode 1 is provided with a recess in which to install the second electrode 2. An insulating film 4 is formed in the recess and then the second electrode is securely fitted in the recess. The assembled electrode is machined to make the surfaces of the first and second electrodes flush with each other in the same plane. The flat surfaces are covered with the sprayed electrostatic attraction film 3, which is then polished until it has a predetermined thickness. This fabrication process allows the electrostatic attraction electrode suitable to large-diameter wafers.
摘要翻译：本发明允许容易且准确地制造其尺寸对应于大直径晶片的静电吸引电极。第一电极1设置有用于安装第二电极2的凹部。绝缘膜4形成在凹部中，然后第二电极牢固地配合在凹部中。加工组装好的电极使第一和第二电极的表面在同一平面上相互齐平。平坦表面被喷涂的静电吸引膜3覆盖，然后将其抛光直到其具有预定厚度。该制造工艺允许静电吸引电极适用于大直径晶片。

3. 发明授权

US07955514B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US07955514B2
公开(公告)日：2011-06-07
申请号：US11679926
申请日：2007-02-28
申请人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
发明人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01J37/32477 , H01J37/32623 , H01J37/32834 , H01J37/32862
摘要： A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.
摘要翻译：一种等离子体处理装置，其具有处理室和样品基底，并且通过使用在处理室内产生的等离子体处理样品，处理室位于真空容器内，样品基座位于处理室内部，样品被安装在样品基体上，等离子体处理装置包括构成处理室的内侧壁面的构成部件，在内侧壁面上具有电介质部分，排出处理室内部的排出部，以及电场供给单元，用于在处理室内不产生等离子体的状态下向构件部件供给电场，其中，从电场供给单元供给的电场的大小迅速变化，同时排出通过排气单元在处理室内部。

4. 发明申请

US20080169065A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080169065A1
公开(公告)日：2008-07-17
申请号：US11679926
申请日：2007-02-28
申请人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
发明人： Kazue Takahashi , Hitoshi Tamura , Motohiro Tanaka , Motohiko Yoshigai
IPC分类号： C23F1/00
CPC分类号： H01J37/32477 , H01J37/32623 , H01J37/32834 , H01J37/32862
摘要： A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.
摘要翻译：一种等离子体处理装置，其具有处理室和样品基底，并且通过使用在处理室内产生的等离子体处理样品，处理室位于真空容器内，样品基座位于处理室内部，样品被安装在样品基底上，等离子体处理装置包括构成处理室的内侧壁面的构成部件，在内侧壁面上具有电介质部分，排出处理室内部的排气单元，以及电场供给单元，用于在处理室内不产生等离子体的状态下向构件部件供给电场，其中，从电场供给单元供给的电场的大小迅速变化，同时排出通过排气单元在处理室内部。

5. 发明申请

US20060060300A1 Plasma treatment method 审中-公开
公开(公告)号：US20060060300A1
公开(公告)日：2006-03-23
申请号：US11274321
申请日：2005-11-16
申请人： Kazue Takahashi , Saburo Kanai , Yoshiaki Satou , Takazumi Ishizu
发明人： Kazue Takahashi , Saburo Kanai , Yoshiaki Satou , Takazumi Ishizu
IPC分类号： H01L21/306
CPC分类号： C23F4/00 , H01J37/3244 , H01J37/32834 , H01J2237/3322 , H01L21/32136 , H01L21/6875
摘要： A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

6. 发明申请

US20100140224A1 Plasma Processing Apparatus And Plasma Processing Method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20100140224A1
公开(公告)日：2010-06-10
申请号：US12709641
申请日：2010-02-22
申请人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
发明人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
IPC分类号： B44C1/22 , C23F1/08
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table, a specimen table cover made of an insulator arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for directly supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover for cooling the specimen table cover.
摘要翻译：一种等离子体处理装置和方法，其包括真空处理室，等离子体产生单元，处理气体供应单元，样品台和真空泵送单元。样本台包括用于将样本保持在样本台的保持表面上的静电布置，由布置在样本台周围的绝缘体制成的样本台盖以及第一和第二传热气体供应单元。第一传热气体供给单元具有用于向试样保持面供给传热气体的主路径，第二传热气体供给单元具有从第一传热气体供给单元的主路径分支直接分支的分支路径将一部分传热气体供应到样品保持表面的外部与样品台盖之间的间隙，以冷却样品台盖。

7. 发明授权

US07565879B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07565879B2
公开(公告)日：2009-07-28
申请号：US10953539
申请日：2004-09-30
申请人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
发明人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
IPC分类号： C23C16/511 , C23C16/52 , C23C16/22 , C23C16/06
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable, arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature monitoring unit monitors temperature of the inner cylinder, and a controller controls temperature of the outer cylinder. A desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder, and the controller controls the temperature of the outer cylinder in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.
摘要翻译：一种具有等离子体发生单元的等离子体处理装置，包括用于承受减压的外筒的处理室和布置在外筒内的非磁性材料制成的可变更内筒，气体到处理室，用于保持样品的样品台和真空抽吸单元。温度监视单元监视内筒的温度，控制器控制外筒的温度。将根据试样的处理条件预先输入的期望的内筒温度与内筒的监测温度进行比较，并且控制器响应于比较的结果来控制外筒的温度，以便以将内筒温度控制到预定值。

8. 发明申请

US20060249254A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20060249254A1
公开(公告)日：2006-11-09
申请号：US11478629
申请日：2006-07-03
申请人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
发明人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
IPC分类号： H01L21/306
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus and method which includes a vacuum processing chamber, a plasma generating unit, a process gas supply unit, a specimen table, and a vacuum pumping unit. The specimen table includes an electrostatic arrangement for holding a specimen on a holding surface of the specimen table by electrostatic force, a specimen table cover arranged around the specimen table, and first and second heat transfer gas supply units. The first heat transfer gas supply unit has a main path for supplying a heat transfer gas to the specimen holding surface for cooling the specimen, and the second heat transfer gas supply unit has a branch path branched from the main path of the first heat transfer gas supply unit for supplying a part of the heat transfer gas to a gap between an outer portion of the specimen holding surface and the specimen table cover.
摘要翻译：一种等离子体处理装置和方法，其包括真空处理室，等离子体产生单元，处理气体供应单元，样品台和真空泵送单元。样本台包括用于通过静电力将样本保持在样品台的保持表面上的静电装置，设置在样本台周围的样本台盖以及第一和第二传热气体供应单元。第一传热气体供给单元具有用于向试样保持面供给传热气体以冷却试样的主路径，第二传热气体供给单元具有从第一传热气体的主路径分支的分支路径供应单元，用于将一部分传热气体供应到样品保持表面的外部与样品台盖之间的间隙。

9. 发明申请

US20050064717A1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20050064717A1
公开(公告)日：2005-03-24
申请号：US10953539
申请日：2004-09-30
申请人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
发明人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
IPC分类号： C30B25/10 , C23F4/00 , C30B25/16 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/461
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable, arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature monitoring unit monitors temperature of the inner cylinder, and a controller controls temperature of the outer cylinder. A desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder, and the controller controls the temperature of the outer cylinder in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.
摘要翻译：一种具有等离子体发生单元的等离子体处理装置，包括用于承受减压的外筒的处理室和布置在外筒内的非磁性材料制成的可变更内筒，气体到处理室，用于保持样品的样品台和真空抽吸单元。温度监视单元监视内筒的温度，控制器控制外筒的温度。将根据试样的处理条件预先输入的期望的内筒温度与内筒的监测温度进行比较，并且控制器响应于比较的结果来控制外筒的温度，以便以将内筒温度控制到预定值。

10. 发明申请

US20050039683A1 Plasma processing method 失效
标题翻译：等离子体处理方法
公开(公告)号：US20050039683A1
公开(公告)日：2005-02-24
申请号：US10953537
申请日：2004-09-30
申请人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
发明人： Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
IPC分类号： C30B25/10 , C23F4/00 , C30B25/16 , H01J37/32 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/32504 , H01J37/32522 , H01J2237/022 , H01L21/3065 , H01L21/67069 , H01L21/67109 , H01L21/6831
摘要： A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature of the inner cylinder is monitored, and a desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder. A temperature of the outer cylinder is controlled in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.
摘要翻译：一种利用等离子体处理装置的等离子体处理方法，该等离子体处理装置具有等离子体发生单元，具有用于承受减压的外筒的处理室，以及由非磁性材料制成的可更换的内筒，用于向处理室供给气体的供给单元，用于保持试样的试样台和真空泵送单元。监测内筒的温度，并将根据试样的加工条件预先输入的期望的内筒温度与内筒的监测温度进行比较。响应于比较的结果来控制外筒的温度，以将内筒温度控制到预定值。

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