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1. 发明申请

US20080067376A1 CHARGED PARTICLE BEAM APPARATUS 审中-公开
标题翻译：充电颗粒光束装置
公开(公告)号：US20080067376A1
公开(公告)日：2008-03-20
申请号：US11751094
申请日：2007-05-21
申请人： Sayaka Tanimoto , Osamu Kamimura , Yasunari Sohda , Hiroya Ohta
发明人： Sayaka Tanimoto , Osamu Kamimura , Yasunari Sohda , Hiroya Ohta
IPC分类号： G21K7/00
CPC分类号： H01J37/153 , H01J37/265 , H01J37/28 , H01J2237/1205 , H01J2237/1534 , H01J2237/1536 , H01J2237/2446 , H01J2237/2448 , H01J2237/24592 , H02N13/00
摘要： This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen. The charged particle beam apparatus further has: a Wien filter for separating paths of the primary charged particle beams and paths of the secondary charged particle beams; a second deflector for deflecting the secondary charged particle beams separated by the Wien filter; and control means for controlling the first deflector and the second deflector in synchronization, wherein the plurality of detectors detect the plurality of secondary charged particle beams separated by the Wien filter individually.
摘要翻译：本发明提供了一种带电粒子束装置，其可以减少离轴像差和将次级束的分离检测兼容。带电粒子束装置具有：形成多个初级带电粒子束的电子光学器件，将它们投射在样本上，并使它们用第一偏转器扫描样本; 多个检测器，通过多个初级带电粒子束的照射，分别检测从样本的多个位置产生的多个次级带电粒子束; 以及用于向样本施加电压的电压源。带电粒子束装置还具有：维纳滤波器，用于分离初级带电粒子束的路径和二次带电粒子束的路径; 用于偏转由维恩滤波器分离的二次带电粒子束的第二偏转器; 以及用于同步地控制第一偏转器和第二偏转器的控制装置，其中多个检测器分别检测由维恩过滤器分离的多个次级带电粒子束。

2. 发明授权

US06838682B2 Electron beam exposure equipment and electron beam exposure method 失效
标题翻译：电子束曝光设备和电子束曝光方法
公开(公告)号：US06838682B2
公开(公告)日：2005-01-04
申请号：US10634878
申请日：2003-08-06
申请人： Yasunari Sohda , Osamu Kamimura , Hiroya Ohta , Susumu Gotoh
发明人： Yasunari Sohda , Osamu Kamimura , Hiroya Ohta , Susumu Gotoh
IPC分类号： G03F7/20 , G03F9/02 , H01J37/04 , H01J37/141 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： H01J37/1471 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/1501
摘要： There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.
摘要翻译：提供了一种使用电子光学系统进行光学调节的电子束曝光技术，该系统使用大场投影所需的双重透镜。具有通过至少两个电磁透镜形成一个图像的部分的电子束曝光设备具有测量位置同时改变至少两个透镜的激发的图像平面附近的电子束; 并且控制装置将测量结果反馈到对准器或透镜的强度。

3. 发明授权

US07049607B2 Electron beam writing equipment and electron beam writing method 有权
标题翻译：电子束写入设备和电子束写入方法
公开(公告)号：US07049607B2
公开(公告)日：2006-05-23
申请号：US10951769
申请日：2004-09-29
申请人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
发明人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
IPC分类号： G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3177 , H01J2237/3045
摘要： Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.
摘要翻译：电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动，以重复形成图案化的束。电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

4. 发明申请

US20050040343A1 Electron beam writing equipment and electron beam writing method 有权
标题翻译：电子束写入设备和电子束写入方法
公开(公告)号：US20050040343A1
公开(公告)日：2005-02-24
申请号：US10951769
申请日：2004-09-29
申请人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
发明人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
IPC分类号： G03F7/20 , G01Q30/02 , H01J37/147 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027 , G21G5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3177 , H01J2237/3045
摘要： Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.
摘要翻译：电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动，以重复形成图案化的束。电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

5. 发明授权

US06809319B2 Electron beam writing equipment and electron beam writing method 失效
标题翻译：电子束写入设备和电子束写入方法
公开(公告)号：US06809319B2
公开(公告)日：2004-10-26
申请号：US10629567
申请日：2003-07-30
申请人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
发明人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
IPC分类号： H01J3728
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3177 , H01J2237/3045
摘要： Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample. The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.
摘要翻译：电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。物镜用于在样品上形成所需的图案。用偏转装置通过高速扫描来移动电子束以重复形成图案化的束。电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

6. 发明授权

US06768118B2 Electron beam monitoring sensor and electron beam monitoring method 有权
标题翻译：电子束监测传感器和电子束监测方法
公开(公告)号：US06768118B2
公开(公告)日：2004-07-27
申请号：US10350188
申请日：2003-01-24
申请人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
发明人： Yoshinori Nakayama , Yasunari Sohda , Hiroya Ohta , Norio Saitou , Masato Muraki , Masaki Takakuwa
IPC分类号： H01J326
CPC分类号： H01J37/244 , H01J2237/24405 , H01J2237/31774
摘要： The present invention provides a beam monitoring sensor which can offer both high beam monitoring precision and high speed monitoring in a multi-electron beam writing system and a monitoring method using the same. In a Faraday cup for electron beam monitoring, tantalum or a heavy metal material having an atomic number larger than that of tantalum is used to provide a Faraday cup construction having a high aspect ratio. The micro Faraday cup permits electron beam monitoring having less beam leak to a high acceleration electron beam.
摘要翻译：本发明提供了一种能够在多电子束书写系统中提供远光监测精度和高速监测的光束监测传感器以及使用其的监测方法。在用于电子束监测的法拉第杯中，钽或重金属使用原子序数大于钽的材料来提供具有高纵横比的法拉第杯结构。微法拉第杯允许电子束监测具有较少的光束泄漏到高加速度电子束。

7. 发明授权

US06511048B1 Electron beam lithography apparatus and pattern forming method 失效
标题翻译：电子束光刻设备和图案形成方法
公开(公告)号：US06511048B1
公开(公告)日：2003-01-28
申请号：US09191383
申请日：1998-11-13
申请人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
发明人： Yasunari Sohda , Yasuhiro Someda , Hiroya Ohta , Takashi Matsuzaka , Norio Saitou , Yoshinori Nakayama
IPC分类号： H01J3730
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： An electron beam lithography apparatus and a semiconductor device pattern forming method for precisely writing patterns near the periphery of a cell mask so that large scale integrated circuits and fine structure devices are fabricated at high yield rates. Cell figures with lower aperture rates are located peripherally and cell figures with higher aperture rates are located closer to a central portion within each of aperture groups furnished on a second mask of the inventive apparatus adopting cell projection. Illustratively, on a mask for use in semiconductor device fabrication, cell figures for forming line patterns and gate patterns are located centrally and cell figures for forming hole patterns are positioned peripherally in each aperture group. This allows the peripherally located figures to be written precisely in each aperture group.
摘要翻译：一种电子束光刻设备和用于在单元掩模的周围精确地写入图案的半导体器件图案形成方法，从而以高产率制造大规模集成电路和精细结构器件。具有较低孔径率的单元图形位于外围，并且具有较高孔径率的单元图形位于更接近于采用单元投影的本发明设备的第二掩模上提供的每个孔组内的中心部分。示例性地，在用于半导体器件制造的掩模上，用于形成线图案和栅极图案的单元图形位于中央，并且用于形成孔图案的单元图形周边地定位在每个孔组中。这允许在每个孔径组中精确地写入外围定位的图形。

8. 发明申请

US20070164458A1 PATTERN FORMING METHOD AND ITS MOLD 失效
标题翻译：图案形成方法及其模型
公开(公告)号：US20070164458A1
公开(公告)日：2007-07-19
申请号：US11623776
申请日：2007-01-17
申请人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
发明人： Masahiko Ogino , Akihiro Miyauchi , Takashi Ando , Chiseki Haginoya , Susumu Komoriya , Yasunari Sohda , Souichi Katagiri , Hiroya Ohta , Yoshinori Nakayama
IPC分类号： H01L23/544 , H01L21/47
CPC分类号： H01L21/76838 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7076 , G11B5/855 , H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a mold in which a pattern is formed of a fine concavo-convex shape, two or more of alignment marks for determining a relative positional relation between a substrate and a mold are formed concentrically. Moreover, a damaged mark is identified from the positional information and shape of the respective marks, and an alignment between the mold and the substrate to which a resin film is applied is carried out excluding the damaged mark.
摘要翻译：在图案形成为微细凹凸形状的模具中，同心地形成用于确定基板和模具之间的相对位置关系的两个或更多个对准标记。此外，根据各个标记的位置信息和形状来识别损坏的标记，并且除了损坏的标记之外，执行模具和施加了树脂膜的基板之间的对准。

9. 发明申请

US20060197453A1 Electron beam writing system and electron beam writing method 失效
标题翻译：电子束写入系统和电子束写入方法
公开(公告)号：US20060197453A1
公开(公告)日：2006-09-07
申请号：US11355952
申请日：2006-02-17
申请人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
发明人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
IPC分类号： H01K1/62
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/3045
摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.
摘要翻译：提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便基于检测结果校正电子束的位置或偏转量。

10. 发明授权

US06667486B2 Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same 有权
标题翻译：电子束曝光方法，电子束曝光装置及使用其的装置制造方法
公开(公告)号：US06667486B2
公开(公告)日：2003-12-23
申请号：US10219769
申请日：2002-08-16
申请人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
发明人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
IPC分类号： H01J3708
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/304 , H01J37/3177
摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
摘要翻译：本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使由多个电子束中的每一个形成的图案的图案数据的位置。

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