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    • 6. 发明授权
    • Charged-particle-beam exposure apparatus and method of controlling same
    • 带电粒子束曝光装置及其控制方法
    • US06969862B2
    • 2005-11-29
    • US10730814
    • 2003-12-08
    • Masato MurakiOsamu KamimuraMasaki Takakuwa
    • Masato MurakiOsamu KamimuraMasaki Takakuwa
    • G03F7/20H01J37/04H01J37/304H01J37/305H01J37/317H01L21/027
    • H01J37/304B82Y10/00B82Y40/00H01J37/3177H01J2237/30433
    • In a charged-particle-beam exposure apparatus for exposing a wafer using a charged-particle beam, an electron beam emitted from an electron source serving as a source of charged particles is substantially collimated by a collimator lens and irradiates an aperture array (3), which has apertures for forming a plurality of electron beams used to expose a wafer. A current detector array has current detectors for measuring the intensities (currents) of electron beams at portions of the-aperture array other than where the apertures are present. During the wafer exposure operation, each current detector of the current detector array measures the intensity of the electron beam. The electron-beam intensity distribution is evaluated based upon the results of measurement and, when necessary, the optical power of electrostatic lenses that construct the collimator lens (2) is adjusted to uniformalize the electron-beam intensity distribution.
    • 在使用带电粒子束曝光晶片的带电粒子束曝光装置中,从作为带电粒子源的电子源发射的电子束基本上被准直透镜准直,并照射孔径阵列(3) ,其具有用于形成用于暴露晶片的多个电子束的孔。 电流检测器阵列具有电流检测器,用于测量孔径阵列除存在孔的部分之外的电子束的强度(电流)。 在晶片曝光操作期间,电流检测器阵列的每个电流检测器测量电子束的强度。 基于测量结果评价电子束强度分布,并且根据需要调整构成准直透镜(2)的静电透镜的光学功率,使电子束强度分布均匀化。