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1. 发明授权

US07423274B2 Electron beam writing system and electron beam writing method 失效
标题翻译：电子束写入系统和电子束写入方法
公开(公告)号：US07423274B2
公开(公告)日：2008-09-09
申请号：US11355952
申请日：2006-02-17
申请人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
发明人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
IPC分类号： A61N5/00
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/3045
摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.
摘要翻译：提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便基于检测结果校正电子束的位置或偏转量。

2. 发明申请

US20060289781A1 Method and apparatus for applying charged particle beam 有权
标题翻译：用于施加带电粒子束的方法和装置
公开(公告)号：US20060289781A1
公开(公告)日：2006-12-28
申请号：US11475014
申请日：2006-06-27
申请人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
IPC分类号： H01J3/14 , G21K1/08
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/3174 , H01J2237/0458 , H01J2237/1501 , H01J2237/31774 , H01J2237/31776
摘要： In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.
摘要翻译：在诸如电子束光刻系统的带电粒子束施加装置中，存在促进交叉的位置调整并提高装置的生产量的技术。聚光透镜的前焦平面设置有用于调节光束轴上的交叉点的高度的尖端（交叉调节边缘）。通过使用交叉调节边缘来测量电子束的形状，即使电子枪形成的交叉点的高度或电子枪的电阻，也可以始终检查聚光透镜的前焦平面上的光束的形状源形成透镜改变。

3. 发明申请

US20050072941A1 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US20050072941A1
公开(公告)日：2005-04-07
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

4. 发明授权

US06870171B2 Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US06870171B2
公开(公告)日：2005-03-22
申请号：US10806190
申请日：2004-03-23
申请人： Masaki Hosoda , Masato Muraki , Hiroya Ohta , Haruo Yoda
发明人： Masaki Hosoda , Masato Muraki , Hiroya Ohta , Haruo Yoda
IPC分类号： G03F7/20 , H01J37/147 , H01J37/317 , H01L21/027 , H01J37/302 , H01J37/04 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/3177 , H01J2237/30455
摘要： An electron beam exposure apparatus which exposes a wafer (118) by using a plurality of electron beams corrects the positional error of the electron beams by using multi-deflector arrays (105, 106) capable of independently deflecting the positions of the electron beams, and pattern data to be projected onto the wafer (118). More specifically, when each of the electron beams is deflected to a predetermined exposure position on the basis of the pattern data, a static positional error independent of the deflection position is corrected by the multi-deflector arrays (105, 106), and a dynamic positional error depending on the deflection position is corrected on the basis of the pattern data.
摘要翻译：通过使用多个电子束使晶片（118）曝光的电子束曝光装置通过使用能够独立地偏转电子束的位置的多偏转阵列（105,106）来校正电子束的位置误差，以及图案数据被投影到晶片（118）上。更具体地说，当基于图案数据将每个电子束偏转到预定曝光位置时，通过多偏转器阵列（105,106）校正与偏转位置无关的静态位置误差，并且动态基于图案数据来校正取决于偏转位置的位置误差。

5. 发明授权

US07341393B2 Mechanism for sealing 有权
标题翻译：密封机构
公开(公告)号：US07341393B2
公开(公告)日：2008-03-11
申请号：US11155633
申请日：2005-06-20
申请人： Masaki Hosoda , Masato Muraki , Yasuhiro Someda , Mahito Negishi , Koichi Wakizaka , Masakazu Sugaya
发明人： Masaki Hosoda , Masato Muraki , Yasuhiro Someda , Mahito Negishi , Koichi Wakizaka , Masakazu Sugaya
IPC分类号： F16C11/00 , F16D1/12
CPC分类号： H01J37/3007 , H01J9/18 , H01J37/04 , H01J2237/1205 , H01J2237/151 , H01J2237/166 , H01J2237/31774 , Y10T403/32713
摘要： A mechanism for connecting first and second members through a sealing member sandwiched therebetween includes a position adjustment portion which adjusts a position of the first member in a direction substantially perpendicular to a surface of the second member with respect to the sealing member arranged on the second member, a reference portion which is provided to the second member and has a reference surface substantially perpendicular to the surface of the second member, and a pressing portion which presses the first member in a direction substantially parallel to the surface of the second member against the reference surface of the reference portion. A positioning member is provided to the first member and comes into contact with the reference surface of the reference portion, with the positioning member being position-adjustable with respect to a reference position of the first member. The first member, while being separated from the sealing member by the position adjustment portion, is positioned by the reference portion and pressing portion in the direction substantially parallel to the surface of the second member, and is thereafter moved by the position adjustment portion in the direction substantially perpendicular to the surface of the second member to deform the sealing member.
摘要翻译：用于通过夹在其间的密封构件连接第一和第二构件的机构包括位置调整部分，其相对于布置在第二构件上的密封构件调节第一构件在基本上垂直于第二构件的表面的方向上的位置设置在第二构件上并且具有基本上垂直于第二构件的表面的基准表面的参考部分，以及按照基本平行于第二构件的表面的方向按压第一构件的按压部分，参考部分的表面。定位构件设置到第一构件并与基准部分的基准表面接触，定位构件相对于第一构件的基准位置可位置调节。第一构件在通过位置调节部分与密封构件分离的同时，通过基准部分和按压部分在基本上平行于第二构件的表面的方向上定位，然后通过位置调整部分方向基本上垂直于第二构件的表面以使密封构件变形。

6. 发明授权

US07173262B2 Charged particle beam exposure apparatus, charged particle beam exposure method and device manufacturing method 有权
标题翻译：带电粒子束曝光装置，带电粒子束曝光方法和装置制造方法
公开(公告)号：US07173262B2
公开(公告)日：2007-02-06
申请号：US11159356
申请日：2005-06-23
申请人： Masaki Hosoda , Masato Muraki , Osamu Kamimura
发明人： Masaki Hosoda , Masato Muraki , Osamu Kamimura
IPC分类号： G21K5/10 , H01K1/62 , H01J37/302
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/0435 , H01J2237/31774
摘要： A charged particle beam exposure apparatus for writing a desired pattern on a substrate using a charged particle beam. The apparatus includes a blanking unit, having a deflector capable of deflecting the charged particle beam in at least two directions, configured to control beam passage to the substrate by deflecting the charged particle beam, and a setting unit configured to set a deflection direction of the charged particle beam by the deflector.
摘要翻译：一种带电粒子束曝光装置，用于使用带电粒子束将所需图案写入基板。该设备包括一个消隐单元，其具有能够使至少两个方向上的带电粒子束偏转的偏转器，该偏转器被配置成通过偏转带电粒子束来控制光束通向基板;以及设置单元，被配置为设置偏转方向带电粒子束由偏转器。

7. 发明授权

US07105842B2 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US07105842B2
公开(公告)日：2006-09-12
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： H01J37/302 , G03F7/20
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

8. 发明申请

US20060197453A1 Electron beam writing system and electron beam writing method 失效
标题翻译：电子束写入系统和电子束写入方法
公开(公告)号：US20060197453A1
公开(公告)日：2006-09-07
申请号：US11355952
申请日：2006-02-17
申请人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
发明人： Yoshinori Nakayama , Hiroya Ohta , Makoto Sakakibara , Yasunari Sohda , Masaki Hosoda
IPC分类号： H01K1/62
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/3045
摘要： An electron beam writing technology which enables highly accurate deflection correction of a minute field used in an electron beam writing system is provided. In this system, a function to move an electron beam by a deflection means through high-speed deflection scanning so as to repeat formation of a cyclic patterned electron beam and a function to move the patterned electron beam on cyclic correction marks by the deflection means through low-speed deflection scanning in synchronization with one cycle of the repetition are provided, and reflected electrons or secondary electrons emitted from the correction marks and the vicinity thereof or transmitted electrons transmitted through the correction marks in the low-speed deflection scanning are detected so as to correct the position or deflection amount of the electron beam based on the detection result.
摘要翻译：提供一种电子束写入技术，其能够对电子束写入系统中使用的微小场进行高精度的偏转校正。在该系统中，通过偏转装置通过高速偏转扫描来移动电子束以便重复形成循环图案化电子束的功能，以及通过偏转装置通过偏转装置将图案化电子束移动到循环校正标记上的功能，通过提供与重复的一个周期同步的低速偏转扫描，检测从校正标记及其附近发射的反射电子或二次电子或在低速偏转扫描中透过校正标记的透射电子，以便基于检测结果校正电子束的位置或偏转量。

9. 发明申请

US20060017019A1 Charged particle beam exposure apparatus, charged particle beam exposure method and device manufacturing method 有权
标题翻译：带电粒子束曝光装置，带电粒子束曝光方法和装置制造方法
公开(公告)号：US20060017019A1
公开(公告)日：2006-01-26
申请号：US11159356
申请日：2005-06-23
申请人： Masaki Hosoda , Masato Muraki , Osamu Kamimura
发明人： Masaki Hosoda , Masato Muraki , Osamu Kamimura
IPC分类号： G21K5/10
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/0435 , H01J2237/31774
摘要： In a charged particle exposure apparatus which exposes a substrate using a blanking unit to repeat blocking and exposure of charged particle beam to the substrate, a blanking direction is adjusted. As an example of the blanking direction, a direction vertical to a raster scanning direction is used.
摘要翻译：在使用消隐单元曝光基板以重复阻挡和曝光带电粒子束到基板的带电粒子曝光装置中，调整消隐方向。作为消隐方向的一个例子，使用垂直于光栅扫描方向的方向。

10. 发明授权

US07378668B2 Method and apparatus for applying charged particle beam 有权
标题翻译：用于施加带电粒子束的方法和装置
公开(公告)号：US07378668B2
公开(公告)日：2008-05-27
申请号：US11475014
申请日：2006-06-27
申请人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yasuhiro Someda , Masaki Hosoda
IPC分类号： H01J3/14 , G21K1/08
CPC分类号： H01J37/304 , B82Y10/00 , B82Y40/00 , H01J37/1471 , H01J37/3174 , H01J2237/0458 , H01J2237/1501 , H01J2237/31774 , H01J2237/31776
摘要： In a charged particle beam applying apparatus such as an electron beams lithography system, there is a technology that facilitates positional adjustment of a crossover and improves throughput of the apparatus. A front focal plane of a condenser lens is provided with a sharp end face (crossover regulation edge) for regulating the height of the crossover on a beam axis. By using the crossover regulation edge to measure the shape of an electron beam, the shape of the beam on the front focal plane of the condenser lens can be always checked even if the height of the crossover formed by an electron gun or the resistance of a source forming lens is changed.
摘要翻译：在诸如电子束光刻系统的带电粒子束施加装置中，存在促进交叉的位置调整并提高装置的生产量的技术。聚光透镜的前焦平面设置有用于调节光束轴上的交叉点的高度的尖端（交叉调节边缘）。通过使用交叉调节边缘来测量电子束的形状，即使电子枪形成的交叉点的高度或电子枪的电阻，也可以始终检查聚光透镜的前焦平面上的光束的形状源形成透镜改变。

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