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    • 4. 发明申请
    • APPARATUS AND METHODS FOR WIRELESS COMMUNICATION
    • 无线通信的装置和方法
    • US20150155846A1
    • 2015-06-04
    • US14400655
    • 2012-05-22
    • Wei HeWenliang QiaoQingyu Guo
    • Wei HeWenliang QiaoQingyu Guo
    • H03H7/38H01Q5/335H04W88/06
    • H03H7/38H01Q5/335H03H2007/386H04B1/0458H04B1/18H04W88/06Y10T29/49016
    • An apparatus comprising: a first resonant circuit configured to have an impedance at a first operational frequency band to impedance match a first radiator to radio circuitry, and to have an impedance at a second operational frequency band to impedance match a second radiator to the radio circuitry; a second resonant circuit configured to have an impedance at the first operational frequency band to impedance match the first radiator to the radio circuitry, and to have an impedance at the second operational frequency band to impedance match the second radiator to the radio circuitry; and a third resonant circuit configured to have an impedance at the first operational frequency band to impedance match the first radiator to the radio circuitry, and to have an impedance at the second operational frequency band to impedance match the second radiator to the radio circuitry.
    • 一种装置,包括:第一谐振电路,其被配置为具有在第一工作频带处的阻抗以阻抗匹配第一辐射器与无线电电路,并且具有在第二工作频带处的阻抗以将第二辐射器阻抗匹配到所述无线电电路 ; 第二谐振电路,其被配置为具有在所述第一工作频带处的阻抗以使所述第一辐射器与所述无线电电路匹配,并且具有在所述第二工作频带处的阻抗以使所述第二辐射器与所述无线电电路匹配; 以及第三谐振电路,其被配置为具有在所述第一工作频带处的阻抗以使所述第一辐射器与所述无线电电路匹配,并且具有在所述第二操作频带处的阻抗以使所述第二辐射器与所述无线电电路匹配。
    • 6. 发明授权
    • High efficiency scintillator detector for charged particle detection
    • 用于带电粒子检测的高效闪烁体检测器
    • US08829451B2
    • 2014-09-09
    • US13495102
    • 2012-06-13
    • Zhibin WangWei HeFumin He
    • Zhibin WangWei HeFumin He
    • G01T1/20
    • G01T1/2002H01J37/244H01J37/28H01J2237/2443
    • An assembly for a charged particle detection device of high detection efficiency is described. The assembly comprising a metal grid for applying attractive potential to lure charged particles; a scintillator disc to absorb the energy from impinging charged particle and reemit the energy in form of light or photons; a light guide to transmit light or photons; and a photomultiplier tube (PMT) cohere with the end of light guide to receive light or photons from light guide and convert it into current signal. A light guide with a bullet-head-shaped front portion ensures total reflection of light propagating within the light guide. A frustum-cone-shaped scintillator disc releases the light that originally trapped in the scintillator disc due to the shape of scintillator.
    • 描述了一种检测效率高的带电粒子检测装置的组件。 所述组件包括金属网格,用于施加诱发电位以诱使带电粒子; 闪烁体盘,以吸收来自撞击带电粒子的能量并以光或光子的形式再次产生能量; 用于传输光或光子的光导; 和光电倍增管(PMT)与光导的端部相连,以从光导中接收光或光子并将其转换为电流信号。 具有子弹头前部的光导确保了在光导内传播的光的全反射。 锥形锥形闪烁体盘由于闪烁体的形状而释放原先被俘获在闪烁体盘中的光。
    • 10. 发明申请
    • Method of Manufacturing Fin Field Effect Transistor
    • 制造鳍场效应晶体管的方法
    • US20130267073A1
    • 2013-10-10
    • US13577252
    • 2012-06-07
    • Huaxiang YinWei HeHuicai ZhongChao ZhaoDapeng Chen
    • Huaxiang YinWei HeHuicai ZhongChao ZhaoDapeng Chen
    • H01L21/336
    • H01L21/823431H01L21/845H01L29/66795H01L29/785
    • The present invention discloses a method of manufacturing a fin field effect transistor, which comprises the steps of forming a plurality of first fin structures on a substrate, which extend along a first direction parallel to the substrate; forming a plurality of second fin structures on a substrate, which extend along a second direction parallel to the substrate and the second direction intersecting with the first direction; selectively removing a part of the second fin structures to form a plurality of gate lines; and selectively removing a part of the first fin structures to form a plurality of substrate lines. In the method of manufacturing a fin field effect transistor according to the present invention, the gate lines and substrate lines are formed simultaneously by first making uniform silicon wing lines and gate wing lines using a limiting photolithography patternizing technique and then performing a centralized cutting of the corresponding specific regions, thereby increasing uniformity and reducing process difficulty and cost.
    • 本发明公开了一种制造鳍状场效应晶体管的方法,其特征在于包括以下步骤:沿着平行于衬底的第一方向延伸的衬底上形成多个第一鳍结构; 在基板上形成多个第二翅片结构,所述第二鳍结构沿着平行于所述基板的第二方向延伸并且所述第二方向与所述第一方向相交; 选择性地去除所述第二鳍结构的一部分以形成多个栅极线; 以及选择性地去除所述第一鳍结构的一部分以形成多条基片线。 在根据本发明的鳍状场效应晶体管的制造方法中,通过首先使用限制光刻图案化技术首先制造均匀的硅翼线和栅翼线,然后进行集中切割,同时形成栅极线和衬底线 相应的特定区域,从而增加均匀性,降低工艺难度和成本。