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1. 发明授权

US08717136B2 Inductor with laminated yoke 有权
标题翻译：带有叠片轭的电感器
公开(公告)号：US08717136B2
公开(公告)日：2014-05-06
申请号：US13347571
申请日：2012-01-10
申请人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F27/30 , H01F5/00 , H01F27/28 , H01F27/24
CPC分类号： H01F41/042 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01F2027/348
摘要： A thin film inductor having yokes, one or more of which is laminated, and one or more conductors passing between the yokes. The laminated yoke or yokes help reduce eddy currents and/or hysteresis losses.
摘要翻译：一种薄膜电感器，其具有轭，其中一个或多个层叠，以及一个或多个通过轭之间的导体。叠片磁轭或磁轭有助于减少涡流和/或磁滞损耗。

2. 发明申请

US20130176095A1 INDUCTOR WITH LAMINATED YOKE 有权
标题翻译：带有层压板的电感器
公开(公告)号：US20130176095A1
公开(公告)日：2013-07-11
申请号：US13347571
申请日：2012-01-10
申请人： Robert E. Fontana, JR. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, JR. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F27/245 , H01F41/00
CPC分类号： H01F41/042 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01F2027/348
摘要： A thin film inductor having yokes, one or more of which is laminated, and one or more conductors passing between the yokes. The laminated yoke or yokes help reduce eddy currents and/or hysteresis losses.
摘要翻译：一种薄膜电感器，其具有轭，其中一个或多个层叠，以及一个或多个通过轭之间的导体。叠片磁轭或磁轭有助于减少涡流和/或磁滞损耗。

3. 发明申请

US20130314192A1 INDUCTOR WITH STACKED CONDUCTORS 有权
标题翻译：带导体的电感器
公开(公告)号：US20130314192A1
公开(公告)日：2013-11-28
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, JR. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, JR. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F27/28
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译：薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。

4. 发明授权

US09064628B2 Inductor with stacked conductors 有权
标题翻译：具有堆叠导体的电感器
公开(公告)号：US09064628B2
公开(公告)日：2015-06-23
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F5/00 , H01F27/28 , H01F17/00 , H01L49/02
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译：薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。

5. 发明申请

US20130106552A1 INDUCTOR WITH MULTIPLE POLYMERIC LAYERS 审中-公开
标题翻译：具有多个聚合物层的电感器
公开(公告)号：US20130106552A1
公开(公告)日：2013-05-02
申请号：US13287942
申请日：2011-11-02
申请人： Robert E. Fontana, JR. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, JR. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F5/00 , H01F5/06
CPC分类号： H01F17/0013 , H01F2017/0066
摘要： A thin film inductor according to one embodiment includes a bottom yoke; a first insulating layer above the bottom yoke; one or more conductors above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the one or more conductors; a third insulating layer above the second insulating layer; and a top yoke above the third insulating layer. A thin film inductor according to another embodiment includes a bottom yoke; a first insulating layer above the bottom yoke, the first insulating layer being polymeric; one or more conductors above the bottom yoke and separated therefrom by the first insulating layer; an upper insulating layer above the one or more conductors, the upper insulating layer being polymeric; and a top yoke above the second insulating layer.
摘要翻译：根据一个实施例的薄膜电感器包括底部轭; 在底部轭上方的第一绝缘层; 一个或多个导体，位于底部磁轭之上并与第一绝缘层分离; 一个或多个导体上方的第二绝缘层; 在所述第二绝缘层上方的第三绝缘层; 以及在第三绝缘层上方的顶部磁轭。根据另一实施例的薄膜电感器包括底部轭; 在所述底部磁轭上方的第一绝缘层，所述第一绝缘层是聚合物; 一个或多个导体，位于底部磁轭之上并与第一绝缘层分离; 在一个或多个导体上方的上绝缘层，上绝缘层是聚合物; 以及在所述第二绝缘层上方的顶部磁轭。

6. 发明授权

US5310580A Electroless metal adhesion to organic dielectric material with phase separated morphology 失效
标题翻译：无机金属与相分离形态的有机介电材料粘合
公开(公告)号：US5310580A
公开(公告)日：1994-05-10
申请号：US874665
申请日：1992-04-27
申请人： Eugene J. O'Sullivan , Terrence R. O'Toole , Judith M. Roldan , Lubomyr T. Romankiw , Carlos J. Sambucetti , Ravi Saraf
发明人： Eugene J. O'Sullivan , Terrence R. O'Toole , Judith M. Roldan , Lubomyr T. Romankiw , Carlos J. Sambucetti , Ravi Saraf
IPC分类号： B05D1/34 , C23C18/20 , H05K3/18 , H05K3/38 , B05D2/06
CPC分类号： H05K3/387 , B05D1/34 , C23C18/20 , C23C18/2033 , C23C18/208 , C23C18/24 , C23C18/30 , H05K2201/0154 , H05K2201/0212 , H05K2203/0759 , H05K2203/0773 , H05K2203/0793 , H05K3/181 , H05K3/381
摘要： Improved adhesion of electroless metal deposited on an organic dielectric layer with phase separated morphology is accomplished by the spontaneous formation of a morphologically and topographically rough surface. In one embodiment a ternary solution of a polar solvent and two polymer precursors of the same polymer which are separable in two phases of different order are cast in film on a substrate and heated to form two phases of different order to spontaneously produce a rough surface. Upon exposure to an alkaline solution, one phase is etched at a faster rate than the other. Seeding and electroless deposition of a metal on the rough surface results in improved adhesion of the metal to the dielectric layer. In a second embodiment a quaternary solution of a polar solvent, a seeding agent, two polymer precursors of the same polymer which are separable in two phases of different order are cast in a thin film on a substrate and heated to form three phases. Upon curing the precursors there is surface roughening as a result of phase separation. Upon exposure to alkaline solution there is etching of one of the polymer phases at a faster rate and simultaneous opening of the seeding colloid. The rough surface is overcoated with a photoresist, exposed and developed. Subsequent electroless metal deposition results in improved metal to dielectric layer adhesion. The method is applicable to selective deposition of electroless copper onto a polyimide layer.
摘要翻译：沉积在具有相分离形态的有机电介质层上的化学金属的改善的粘附通过自发形成形态和形貌上粗糙的表面来实现。在一个实施方案中，可以将不同顺序的两相分离的相同聚合物的极性溶剂和两种聚合物前体的三元溶液在基材上成膜并加热形成不同阶数的两相以自发产生粗糙表面。在暴露于碱性溶液时，以比另一相更快的速率蚀刻一相。在粗糙表面上的金属的接种和无电沉积导致金属对电介质层的附着力提高。在第二个实施方案中，将极性溶剂，接种剂，可以在两相中分离的相同聚合物的两种聚合物前体的四元溶液浇铸在基材上的薄膜中，并加热形成三相。固化前体由于相分离而导致表面粗糙化。暴露在碱性溶液中时，以更快的速率蚀刻聚合物相之一并同时打开接种胶体。粗糙表面用光致抗蚀剂涂覆，曝光和显影。随后的无电金属沉积导致金属与电介质层粘附性的改善。该方法适用于将化学镀铜选择性沉积到聚酰亚胺层上。

7. 发明授权

US4962086A High T.sub.c superconductor - gallate crystal structures 失效
标题翻译：高Tc超导体 - 没食子酸酯晶体结构
公开(公告)号：US4962086A
公开(公告)日：1990-10-09
申请号：US204066
申请日：1988-06-08
申请人： William J. Gallagher , Edward A. Giess , Aranava Gupta , Robert B. Laibowitz , Eugene J. O'Sullivan , Robert L. Sandstrom
发明人： William J. Gallagher , Edward A. Giess , Aranava Gupta , Robert B. Laibowitz , Eugene J. O'Sullivan , Robert L. Sandstrom
IPC分类号： C01G3/00 , C01B13/14 , C01G1/00 , C04B41/89 , C30B23/02 , C30B25/18 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/14 , H01L39/22 , H01L39/24 , H01P3/08
CPC分类号： H01P3/085 , C30B23/02 , C30B29/22 , C30B29/225 , H01L39/143 , H01L39/2458 , H01L39/247 , Y10S428/901 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/704 , Y10T29/49014
摘要： High T.sub.c oxide superconductive films can be formed on gallate layers, where the gallate layers include a rare earth element or a rare earth-like element. Combinations of rare earth elements and rare earth-like elements can also be utilized. The superconductive films can be epitaxially deposited on these gallate layers to form single crystals or, in the minimum, highly oriented superconductive layers. Any high T.sub.c superconductive oxide material can be utilized, but the best lattice matches are to superconductive materials including copper oxides. Examples include Y-Ba-Cu-O systems, Bi-based systems and Tl-based systems.

8. 发明申请

US20110049655A1 PILLAR-BASED INTERCONNECTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
标题翻译：用于磁阻随机存取存储器的基于柱状的互连
公开(公告)号：US20110049655A1
公开(公告)日：2011-03-03
申请号：US12549799
申请日：2009-08-28
申请人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
发明人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.
摘要翻译：半导体器件包括包括M2图案化区域的衬底。在M2图案化区域上形成VA柱结构。 VA柱结构包括一个减少图案化的金属层。 VA柱结构是亚光刻接触。在氧化物层和VA柱的金属层上形成MTJ堆叠。 MTJ叠层的尺寸和MTJ叠层的形状各向异性独立于亚光刻触点的尺寸和形状各向异性。

9. 发明申请

US20110048930A1 SELECTIVE NANOTUBE GROWTH INSIDE VIAS USING AN ION BEAM 有权
标题翻译：使用离子束选择性纳米生长在VIAS内
公开(公告)号：US20110048930A1
公开(公告)日：2011-03-03
申请号：US12549929
申请日：2009-08-28
申请人： Katherina E. Babich , Alessandro C. Callegari , John J. Connolly , Eugene J. O'Sullivan
发明人： Katherina E. Babich , Alessandro C. Callegari , John J. Connolly , Eugene J. O'Sullivan
IPC分类号： C23F4/00
CPC分类号： H01L21/76879 , H01J37/3045 , H01J37/305 , H01J37/3056 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
摘要翻译：选择性地生长一个或多个碳纳米管的方法包括在基底上形成绝缘层，绝缘层具有顶表面; 在绝缘层中形成通孔; 在绝缘层上形成活性金属层，包括通孔的侧壁和底表面; 并且用离子束在顶表面的部分去除活性金属层，以使一个或多个碳纳米管在通孔内部选择性地生长。

10. 发明申请

US20080156664A1 MRAM WET ETCH METHOD 失效
标题翻译： MRAM湿蚀刻方法
公开(公告)号：US20080156664A1
公开(公告)日：2008-07-03
申请号：US11778426
申请日：2007-07-16
申请人： Eugene J. O'Sullivan , Daniel Worledge
发明人： Eugene J. O'Sullivan , Daniel Worledge
IPC分类号： G01N17/02
CPC分类号： H01F41/308 , B82Y40/00 , C23F1/14 , H01F10/3254 , H01F10/3268 , H01L43/12
摘要： An etching process is employed to selectively pattern the top magnetic film layer, the tunnel barrier, and the pinned bottom magnetic layer of a magnetic thin film structure. The pinned bottom magnetic film layer has an antiferromagnetic layer or a Ru spacer formed thereunder. The etching process employs various etching steps that selectively remove various layers of the magnetic thin film structure stopping on the antiferromagnetic layer or the Ru spacer. The progress of this etching process can be monitored by measuring the electrochemical potential difference of a part or wafer containing a magnetic structure with respect to a reference electrode simultaneously with the selective etching process.
摘要翻译：采用蚀刻工艺来选择性地图形磁性薄膜结构的顶部磁性膜层，隧道势垒和钉扎底部磁性层。固定的底部磁性膜层在其下方形成反铁磁性层或Ru隔离层。蚀刻工艺采用各种蚀刻步骤，其选择性地去除在反铁磁层或Ru间隔物上停止的磁性薄膜结构的各种层。可以通过与选择性蚀刻工艺同时测量包含磁性结构的部件或晶片相对于参考电极的电化学电势差来监测该蚀刻工艺的进展。

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