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1. 发明授权

US08717136B2 Inductor with laminated yoke 有权
标题翻译：带有叠片轭的电感器
公开(公告)号：US08717136B2
公开(公告)日：2014-05-06
申请号：US13347571
申请日：2012-01-10
申请人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F27/30 , H01F5/00 , H01F27/28 , H01F27/24
CPC分类号： H01F41/042 , H01F27/2804 , H01F41/046 , H01F2017/0066 , H01F2027/348
摘要： A thin film inductor having yokes, one or more of which is laminated, and one or more conductors passing between the yokes. The laminated yoke or yokes help reduce eddy currents and/or hysteresis losses.
摘要翻译：一种薄膜电感器，其具有轭，其中一个或多个层叠，以及一个或多个通过轭之间的导体。叠片磁轭或磁轭有助于减少涡流和/或磁滞损耗。

2. 发明授权

US09064628B2 Inductor with stacked conductors 有权
标题翻译：具有堆叠导体的电感器
公开(公告)号：US09064628B2
公开(公告)日：2015-06-23
申请号：US13477978
申请日：2012-05-22
申请人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , Philipp Herget , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang , Bucknell C. Webb
IPC分类号： H01F5/00 , H01F27/28 , H01F17/00 , H01L49/02
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0013 , H01F2017/0066 , H01F2017/0086 , H01F2027/2809 , H01L28/10
摘要： A thin film coupled inductor, a thin film spiral inductor, and a system that includes an electronic device and a power supply or power converter incorporating one or more such inductors. A thin film coupled inductor includes a wafer substrate; a bottom yoke comprising a magnetic material above the wafer substrate; a first insulating layer above the bottom yoke; a first conductor above the bottom yoke and separated therefrom by the first insulating layer; a second insulating layer above the first conductor; a second conductor above the second insulating layer; a third insulating layer above the second conductor; and a non-planar top yoke above the third insulating layer, the top yoke comprising a magnetic material.
摘要翻译：薄膜耦合电感器，薄膜螺旋电感器以及包括电子器件和并入一个或多个此类电感器的电源或功率转换器的系统。薄膜耦合电感器包括晶片衬底; 底部轭，其包括晶片衬底上方的磁性材料; 在底部轭上方的第一绝缘层; 第一导体，位于底部磁轭之上并由第一绝缘层分离; 在所述第一导体上方的第二绝缘层; 在第二绝缘层上方的第二导体; 在第二导体上方的第三绝缘层; 以及在第三绝缘层上方的非平面顶部磁轭，顶部磁轭包括磁性材料。

3. 发明授权

US08102236B1 Thin film inductor with integrated gaps 有权
标题翻译：具有集成间隙的薄膜电感器
公开(公告)号：US08102236B1
公开(公告)日：2012-01-24
申请号：US12968118
申请日：2010-12-14
申请人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Bucknell C. Webb
发明人： Robert E. Fontana, Jr. , William J. Gallagher , Philipp Herget , Bucknell C. Webb
IPC分类号： H01F5/00
CPC分类号： H01F17/0006 , H01F3/14
摘要： A thin film inductor according to one embodiment includes one or more arms; one or more conductors passing through each arm; a first ferromagnetic yoke wrapping partially around the one or more conductors in a first of the one or more arms, the first ferromagnetic yoke comprising a magnetic top section, a magnetic bottom section, and via regions positioned on opposites sides of the one or more conductors in the first of the one or more arms, wherein the magnetic top section and magnetic bottom section are coupled together through a low reluctance path in the via regions; and one or more non-magnetic gaps between the top section and the bottom section in at least one of the via regions. Additional systems and methods are also provided.
摘要翻译：根据一个实施例的薄膜电感器包括一个或多个臂; 穿过每个臂的一个或多个导体; 所述第一铁磁磁轭围绕所述一个或多个臂中的第一个中的所述一个或多个导体包围，所述第一铁磁轭包括磁性顶部，磁性底部部分和位于所述一个或多个导体的相对侧上的通孔区域在一个或多个臂中的第一个中，其中磁性顶部部分和磁性底部部分通过通孔区域中的低磁阻路径耦合在一起; 以及在至少一个通孔区域中的顶部和底部之间的一个或多个非磁性间隙。还提供了附加的系统和方法。

4. 发明授权

US5164869A Magnetic recording head with integrated magnetoresistive element and open yoke 失效
标题翻译：磁性录音头与集成磁性元件和开放的YOKE
公开(公告)号：US5164869A
公开(公告)日：1992-11-17
申请号：US661797
申请日：1991-02-27
申请人： Robert E. Fontana, Jr. , Lubomyr T. Romankiw , Mason L. Williams, III
发明人： Robert E. Fontana, Jr. , Lubomyr T. Romankiw , Mason L. Williams, III
IPC分类号： G11B5/31 , G11B5/39
CPC分类号： G11B5/3967
摘要： An integrated inductive write, magnetoresistive (MR) read thin film magnetic head comprising an open magnetic yoke having outside legs each having a winding thereon and a central leg having an opening across which the MR element is coupled. The outer legs are overlapped at one end to form confronting pole pieces having a transducing gap between the pole pieces, and the central leg is positioned between the pole pieces at one end and joined with the outer legs at the other end to form a symmetrical magnetic yoke structure. The windings are wound in a direction so that the flux produced by equally energizing the windings is equal and opposite in each of the outside legs, is additive at the transducing gap between the pole pieces, and produces no net flux through the central leg.

5. 发明授权

US08634168B2 Magnetoresistive sensor having a structure for activating and deactivating electrostatic discharge prevention circuitry 有权
标题翻译：具有用于激活和去激活静电放电防止电路的结构的磁阻传感器
公开(公告)号：US08634168B2
公开(公告)日：2014-01-21
申请号：US13433192
申请日：2012-03-28
申请人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
发明人： Thomas Robert Albrecht , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Timothy Clark Reiley , Xiao Z. Wu
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/40
摘要： A structure for preventing Electrostatic Discharge (ESD) damage to a magnetoresistive sensor during manufacture. The structure includes a switching element that can be switched off during testing of the sensor and then switched back on to provide ESD shunting to the sensor. The switch can be a thermally activated mechanical relay built onto the slider. The switch could also be a programmable resistor that includes a solid electrolyte sandwiched between first and second electrodes. One of the electrodes functions as an anode. When voltage is applied in a first direction an ion bridge forms across through the electrolyte across electrodes making the resistor conductive. When a voltage is applied in a second direction, the ion bridge recedes and the programmable resistor becomes essentially non-conductive.
摘要翻译：用于在制造期间防止静电放电（ESD）损坏磁阻传感器的结构。该结构包括开关元件，该开关元件可以在测试传感器期间关闭，然后重新接通以向传感器提供ESD分流。开关可以是内置在滑块上的热激活机械继电器。开关也可以是可编程电阻器，其包括夹在第一和第二电极之间的固体电解质。电极之一用作阳极。当沿第一方向施加电压时，离子桥跨越电解质跨过电极跨过电极，使电阻器导电。当沿第二个方向施加电压时，离子桥退出，可编程电阻基本上不导电。

6. 发明授权

US08059373B2 EMR sensor and transistor formed on the same substrate 有权
标题翻译： EMR传感器和晶体管形成在同一基板上
公开(公告)号：US08059373B2
公开(公告)日：2011-11-15
申请号：US11549879
申请日：2006-10-16
申请人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
发明人： Liesl Folks , Robert E. Fontana, Jr. , Bruce A. Gurney , Klaas B. Klaassen , Stefan Maat
IPC分类号： G11B5/33
CPC分类号： G11B5/3993
摘要： Magnetic sensing chips and methods of fabricating the magnetic sensing chips are disclosed. A magnetic sensing chip as described herein includes an EMR sensor formed on a substrate from multiple semiconductor layers. One or more of the semiconductor layers form a quantum well comprising a two-dimensional electron gas (2DEG) or hole gas (2DHG). The magnetic sensing chip also includes one or more transistors formed on the substrate from the multiple semiconductor layers. The transistor(s) likewise include a quantum well comprising a 2DEG or 2DHG. The EMR sensor and the transistor(s) are connected by one or more connections so that the transistor(s) amplifies data signals from the EMR sensor.
摘要翻译：公开了磁感测芯片和制造磁感测芯片的方法。如本文所述的磁传感芯片包括形成在来自多个半导体层的衬底上的EMR传感器。一个或多个半导体层形成包含二维电子气（2DEG）或空穴气体（2DHG）的量子阱。磁感测芯片还包括从多个半导体层形成在衬底上的一个或多个晶体管。晶体管同样包括包含2DEG或2DHG的量子阱。 EMR传感器和晶体管通过一个或多个连接连接，使得晶体管放大来自EMR传感器的数据信号。

7. 发明授权

US08045299B2 Method and apparatus for oxidizing conductive redeposition in TMR sensors 有权
标题翻译：在TMR传感器中氧化导电再沉积的方法和装置
公开(公告)号：US08045299B2
公开(公告)日：2011-10-25
申请号：US11558532
申请日：2006-11-10
申请人： Robert E. Fontana, Jr. , Howard G. Zolla
发明人： Robert E. Fontana, Jr. , Howard G. Zolla
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/012 , G11B5/3133 , G11B5/3163 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3967 , G11B5/40 , G11B2005/3996 , H01F41/308 , H01L43/12
摘要： A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR stack having a first electrode that includes at least a pinned layer and an antiferromagnetic (AFM) layer, a second electrode that includes a free layer and a tunnel barrier is formed. The TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.
摘要翻译：公开了用于氧化TMR传感器中的导电再沉积的方法和装置。一种具有至少包括被钉扎层和反铁磁性（AFM）层的第一电极的TMR堆叠，形成包括自由层和隧道势垒的第二电极。蚀刻TMR阻挡层。再沉积材料被氧化，并且使用选自臭氧和水蒸气的氧化剂使屏障愈合。

8. 发明授权

US07839607B2 Method to reduce corner shunting during fabrication of CPP read heads 有权
标题翻译：在CPP读取头制造过程中减少拐角分流的方法
公开(公告)号：US07839607B2
公开(公告)日：2010-11-23
申请号：US11890868
申请日：2007-08-07
申请人： Robert E. Fontana, Jr. , Ying Hong , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
发明人： Robert E. Fontana, Jr. , Ying Hong , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
IPC分类号： G11B5/127
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3163 , G11B5/3932 , G11B2005/3996 , Y10T428/1171
摘要： A method is presented for fabricating a CPP read head having a CPP read head sensor and a hard bias layer which includes forming a strip of sensor material in a sensor material region, and depositing strips of fast-milling dielectric material in first and second fast-milling dielectric material regions adjacent to the sensor material region. A protective layer and a layer of masking material are deposited on the strip of sensor material and the strips of fast-milling dielectric material to provide masked areas and exposed areas. A shaping source, such as an ion milling source, is provided which shapes the exposed areas. Hard bias material is then deposited on the regions of sensor material and fast-milling dielectric material to form caps on each of these regions. The caps of hard bias material and the masking material are then removed from each of these regions.
摘要翻译：提出了一种用于制造具有CPP读取头传感器和硬偏置层的CPP读取头的方法，该CPP读取头包括在传感器材料区域中形成传感器材料条，以及将快速研磨电介质材料的条带放置在第一和第二快速接头中，研磨与传感器材料区域相邻的介电材料区域。保护层和掩蔽材料层沉积在传感器材料条和快速研磨电介质材料条上，以提供掩蔽区域和暴露区域。提供成形源，例如离子铣削源，其形成暴露的区域。然后将硬偏置材料沉积在传感器材料和快速研磨电介质材料的区域上，以在这些区域中的每一个上形成盖。然后从这些区域中的每一个去除硬偏置材料的盖子和掩模材料。

9. 发明授权

US07615771B2 Memory array having memory cells formed from metallic material 有权
标题翻译：具有由金属材料形成的存储单元的存储器阵列
公开(公告)号：US07615771B2
公开(公告)日：2009-11-10
申请号：US11380498
申请日：2006-04-27
申请人： Robert E. Fontana, Jr. , Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Robert E. Fontana, Jr. , Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译：公开了由交叉点存储器阵列组成的固态存储器。交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。存储器阵列还包括位于第一和第二导线之间的多个存储单元。存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。一阶相变导致金属材料的电阻率的相应变化。

10. 发明授权

US07253991B2 Planar perpendicular recording head 有权
标题翻译：平面垂直记录头
公开(公告)号：US07253991B2
公开(公告)日：2007-08-07
申请号：US10836918
申请日：2004-04-30
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127 , G11B5/31
CPC分类号： G11B5/315 , G11B5/10 , G11B5/1278
摘要： A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
摘要翻译：描述了不需要研磨的用于垂直记录的磁头（滑块）。该头部具有平行于晶片表面的空气轴承表面。线圈和极片由平行于空气轴承表面设置的薄膜形成。标准光刻技术可用于定义形状，间隙和极片尺寸。可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。主回极片和返回极片的厚度由沉积过程而不是研磨来控制。用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。

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