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1. 发明申请

US20110049655A1 PILLAR-BASED INTERCONNECTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY 有权
标题翻译：用于磁阻随机存取存储器的基于柱状的互连
公开(公告)号：US20110049655A1
公开(公告)日：2011-03-03
申请号：US12549799
申请日：2009-08-28
申请人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
发明人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
IPC分类号： H01L43/08 , H01L43/12
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.
摘要翻译：半导体器件包括包括M2图案化区域的衬底。在M2图案化区域上形成VA柱结构。 VA柱结构包括一个减少图案化的金属层。 VA柱结构是亚光刻接触。在氧化物层和VA柱的金属层上形成MTJ堆叠。 MTJ叠层的尺寸和MTJ叠层的形状各向异性独立于亚光刻触点的尺寸和形状各向异性。

2. 发明授权

US08884387B2 Pillar-based interconnects for magnetoresistive random access memory 有权
标题翻译：用于磁阻随机存取存储器的基于柱的互连
公开(公告)号：US08884387B2
公开(公告)日：2014-11-11
申请号：US13568670
申请日：2012-08-07
申请人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
发明人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
IPC分类号： H01L29/82 , H01L27/22 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.
摘要翻译：半导体器件包括包括M2图案化区域的衬底。在M2图案化区域上形成VA柱结构。 VA柱结构包括一个减少图案化的金属层。 VA柱结构是亚光刻接触。在氧化物层和VA柱的金属层上形成MTJ堆叠。 MTJ叠层的尺寸和MTJ叠层的形状各向异性独立于亚光刻触点的尺寸和形状各向异性。

3. 发明授权

US08796041B2 Pillar-based interconnects for magnetoresistive random access memory 有权
公开(公告)号：US08796041B2
公开(公告)日：2014-08-05
申请号：US12549799
申请日：2009-08-28
申请人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
发明人： Solomon Assefa , Michael C. Gaidis , Eric A. Joseph , Eugene J. O'Sullivan
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： A semiconductor device includes a substrate including an M2 patterned area. A VA pillar structure is formed over the M2 patterned area. The VA pillar structure includes a substractively patterned metal layer. The VA pillar structure is a sub-lithographic contact. An MTJ stack is formed over the oxide layer and the metal layer of the VA pillar. A size of the MTJ stack and a shape anisotropy of the MTJ stack are independent of a size and a shape anisotropy of the sub-lithographic contact.

4. 发明授权

US08535953B2 Process for selectively patterning a magnetic film structure 失效
标题翻译：用于选择性地构图磁膜结构的工艺
公开(公告)号：US08535953B2
公开(公告)日：2013-09-17
申请号：US13350174
申请日：2012-01-13
申请人： David W. Abraham , Solomon Assefa , Eugene J. O'Sullivan
发明人： David W. Abraham , Solomon Assefa , Eugene J. O'Sullivan
IPC分类号： H01L21/00 , H01L21/20 , H01L21/461 , H01L21/302
CPC分类号： H01L43/12
摘要： Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof, stopping on the tunnel barrier layer.
摘要翻译：用于选择性地图案化磁性膜结构的方法通常包括通过湿法选择性地蚀刻设置在隧道势垒层上的自由层的暴露部分，其包括将自由层暴露于包含至少一种酸和有机磷酸抑制剂或盐的蚀刻剂溶液在隧道势垒层上停止。

5. 发明申请

US20120115251A1 PROCESS FOR SELECTIVELY PATTERNING A MAGNETIC FILM STRUCTURE 失效
标题翻译：用于选择性地绘制磁性膜结构的方法
公开(公告)号：US20120115251A1
公开(公告)日：2012-05-10
申请号：US13350174
申请日：2012-01-13
申请人： David W. Abraham , Solomon Assefa , Eugene J. O'Sullivan
发明人： David W. Abraham , Solomon Assefa , Eugene J. O'Sullivan
IPC分类号： H01L21/465
CPC分类号： H01L43/12
摘要： Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof, stopping on the tunnel barrier layer.
摘要翻译：用于选择性地图案化磁性膜结构的方法通常包括通过湿法选择性地蚀刻设置在隧道势垒层上的自由层的暴露部分，其包括将自由层暴露于包含至少一种酸和有机磷酸抑制剂或盐的蚀刻剂溶液在隧道势垒层上停止。

6. 发明授权

US07381343B2 Hard mask structure for patterning of materials 有权
标题翻译：用于图案化材料的硬掩模结构
公开(公告)号：US07381343B2
公开(公告)日：2008-06-03
申请号：US11177008
申请日：2005-07-08
申请人： Michael C. Gaidis , Sivananda K. Kanakasabapathy , Eugene J. O'Sullivan
发明人： Michael C. Gaidis , Sivananda K. Kanakasabapathy , Eugene J. O'Sullivan
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L43/12 , H01L21/0332 , H01L21/0337 , H01L27/11507 , H01L28/65
摘要： Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.
摘要翻译：提供了磁性器件制造技术。一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。在待图案化材料的至少一个表面上形成硬掩模结构。硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。材料被蚀刻。

7. 发明申请

US20080185101A1 Hard Mask Structure for Patterning of Materials 有权
标题翻译：材料图案的硬掩模结构
公开(公告)号：US20080185101A1
公开(公告)日：2008-08-07
申请号：US12099441
申请日：2008-04-08
申请人： Michael C. Gaidis , Sivananda K. Kanakasabapathy , Eugene J. O'Sullivan
发明人： Michael C. Gaidis , Sivananda K. Kanakasabapathy , Eugene J. O'Sullivan
IPC分类号： H01L21/306
CPC分类号： H01L43/12 , H01L21/0332 , H01L21/0337 , H01L27/11507 , H01L28/65
摘要： Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.
摘要翻译：提供了磁性器件制造技术。一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。在待图案化材料的至少一个表面上形成硬掩模结构。硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。材料被蚀刻。

8. 发明授权

US07550044B2 Hard mask structure for patterning of materials 有权
标题翻译：用于图案化材料的硬掩模结构
公开(公告)号：US07550044B2
公开(公告)日：2009-06-23
申请号：US12099441
申请日：2008-04-08
申请人： Michael C. Gaidis , Sivananda K. Kanakasabapathy , Eugene J. O'Sullivan
发明人： Michael C. Gaidis , Sivananda K. Kanakasabapathy , Eugene J. O'Sullivan
IPC分类号： B05C1/00 , B44C1/22
CPC分类号： H01L43/12 , H01L21/0332 , H01L21/0337 , H01L27/11507 , H01L28/65
摘要： Techniques for magnetic device fabrication are provided. In one aspect, a method of patterning at least one, e.g., nonvolatile, material comprises the following steps. A hard mask structure is formed on at least one surface of the material to be patterned. The hard mask structure is configured to have a base, proximate to the material, and a top opposite the base. The base has one or more lateral dimensions that are greater than one or more lateral dimensions of the top of the hard mask structure, such that at least one portion of the base extends out laterally a substantial distance beyond the top. The top of the hard mask structure is at a greater vertical distance from the material being etched than the base. The material is etched.
摘要翻译：提供了磁性器件制造技术。一方面，图案化至少一种，例如非挥发性材料的方法包括以下步骤。在待图案化材料的至少一个表面上形成硬掩模结构。硬掩模结构被配置为具有靠近材料的基部和与基部相对的顶部。基座具有大于硬掩模结构的顶部的一个或多个横向尺寸的一个或多个横向尺寸，使得基部的至少一部分横向延伸超过顶部的实质距离。硬掩模结构的顶部距离被蚀刻的材料比基底更大的垂直距离。材料被蚀刻。

9. 发明申请

US20110048930A1 SELECTIVE NANOTUBE GROWTH INSIDE VIAS USING AN ION BEAM 有权
标题翻译：使用离子束选择性纳米生长在VIAS内
公开(公告)号：US20110048930A1
公开(公告)日：2011-03-03
申请号：US12549929
申请日：2009-08-28
申请人： Katherina E. Babich , Alessandro C. Callegari , John J. Connolly , Eugene J. O'Sullivan
发明人： Katherina E. Babich , Alessandro C. Callegari , John J. Connolly , Eugene J. O'Sullivan
IPC分类号： C23F4/00
CPC分类号： H01L21/76879 , H01J37/3045 , H01J37/305 , H01J37/3056 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/00
摘要： A method of selectively growing one or more carbon nano-tubes includes forming an insulating layer on a substrate, the insulating layer having a top surface; forming a via in the insulating layer; forming an active metal layer over the insulating layer, including sidewall and bottom surfaces of the via; and removing the active metal layer at portions of the top surface with an ion beam to enable the selective growth of one or more carbon nano-tubes inside the via.
摘要翻译：选择性地生长一个或多个碳纳米管的方法包括在基底上形成绝缘层，绝缘层具有顶表面; 在绝缘层中形成通孔; 在绝缘层上形成活性金属层，包括通孔的侧壁和底表面; 并且用离子束在顶表面的部分去除活性金属层，以使一个或多个碳纳米管在通孔内部选择性地生长。

10. 发明申请

US20080156664A1 MRAM WET ETCH METHOD 失效
标题翻译： MRAM湿蚀刻方法
公开(公告)号：US20080156664A1
公开(公告)日：2008-07-03
申请号：US11778426
申请日：2007-07-16
申请人： Eugene J. O'Sullivan , Daniel Worledge
发明人： Eugene J. O'Sullivan , Daniel Worledge
IPC分类号： G01N17/02
CPC分类号： H01F41/308 , B82Y40/00 , C23F1/14 , H01F10/3254 , H01F10/3268 , H01L43/12
摘要： An etching process is employed to selectively pattern the top magnetic film layer, the tunnel barrier, and the pinned bottom magnetic layer of a magnetic thin film structure. The pinned bottom magnetic film layer has an antiferromagnetic layer or a Ru spacer formed thereunder. The etching process employs various etching steps that selectively remove various layers of the magnetic thin film structure stopping on the antiferromagnetic layer or the Ru spacer. The progress of this etching process can be monitored by measuring the electrochemical potential difference of a part or wafer containing a magnetic structure with respect to a reference electrode simultaneously with the selective etching process.
摘要翻译：采用蚀刻工艺来选择性地图形磁性薄膜结构的顶部磁性膜层，隧道势垒和钉扎底部磁性层。固定的底部磁性膜层在其下方形成反铁磁性层或Ru隔离层。蚀刻工艺采用各种蚀刻步骤，其选择性地去除在反铁磁层或Ru间隔物上停止的磁性薄膜结构的各种层。可以通过与选择性蚀刻工艺同时测量包含磁性结构的部件或晶片相对于参考电极的电化学电势差来监测该蚀刻工艺的进展。

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