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1. 发明申请

US20060211267A1 Silicon oxide thin-films with embedded nanocrystalline silicon 有权
公开(公告)号：US20060211267A1
公开(公告)日：2006-09-21
申请号：US11418273
申请日：2006-05-04
申请人： Pooran Joshi , Tingkai Li , Yoshi Ono , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Tingkai Li , Yoshi Ono , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/31
CPC分类号： H01L21/31608 , C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/0234
摘要： A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate, using a high-density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, the SiOx thin-film is embedded with nanocrystalline Si. The HD PECVD process may use an inductively coupled plasma (ICP) source, a substrate temperature of less than about 400° C., and an oxygen source gas with a silicon precursor. In one aspect, a hydrogen source gas and an inert gas are used, where the ratio of oxygen source gas to inert gas is in the range of about 0.02 to 5. The SiOx thin-film with embedded nanocrystalline Si typically has a refractive index in the range of about 1.6 to 2.2, with an extinction coefficient in the range of 0 to 0.5.

2. 发明申请

US20060189014A1 High-luminescence silicon electroluminescence device 失效
标题翻译：高发光硅电致发光器件
公开(公告)号：US20060189014A1
公开(公告)日：2006-08-24
申请号：US11066713
申请日：2005-02-24
申请人： Tingkai Li , Pooran Joshi , Wei Gao , Yoshi Ono , Sheng Hsu
发明人： Tingkai Li , Pooran Joshi , Wei Gao , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/03046 , Y02E10/544 , Y02P70/521
摘要： A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
摘要翻译：提供一种用于形成高发光Si电致发光（EL）荧光体的方法，其具有由Si荧光体制成的EL器件。该方法包括：用Si纳米晶体沉积富含氧的氧化物（SRO）膜，折射率在1.5至2.1范围内，孔隙率在5至20％的范围内; 并且在氧气氛中对SRO膜进行后退火。 DC溅射或PECVD工艺可用于沉积SRO膜。在一个方面，该方法还包括：HF缓冲氧化物蚀刻（BOE）SRO膜; 并且再次氧化SRO膜，以在SRO膜中的Si纳米晶体周围形成SiO 2层。在一个方面，SRO膜通过在氧气气氛中退火再次氧化。以这种方式，在具有1至5纳米（nm）范围内的厚度的Si纳米晶体周围形成SiO 2层。

3. 发明申请

US20080164569A1 Terbium-doped, silicon-rich oxide electroluminescent devices and method of making the same 有权
标题翻译：铽掺杂，富硅氧化物电致发光器件及其制造方法
公开(公告)号：US20080164569A1
公开(公告)日：2008-07-10
申请号：US11582275
申请日：2006-10-16
申请人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L29/00
CPC分类号： H01L27/15 , H01L33/0004 , H01L33/343
摘要： A method of fabricating an electroluminescent device includes, on a prepared substrate, depositing a rare earth-doped silicon-rich layer on gate oxide layer as a light emitting layer; and annealing and oxidizing the structure to repair any damage caused to the rare earth-doped silicon-rich layer; and incorporating the electroluminescent device into a CMOS IC. An electroluminescent device fabricated according to the method of the invention includes a substrate, a rare earth-doped silicon-rich layer formed on the gate oxide layer for emitting a light of a pre-determined wavelength; a top electrode formed on the rare earth-doped silicon-rich layer; and associated CMOS IC structures fabricated thereabout.
摘要翻译：一种制造电致发光器件的方法包括：在制备的衬底上，在作为发光层的栅极氧化物层上沉积稀土掺杂的富硅层; 并对该结构进行退火和氧化以修复对稀土掺杂的富硅层造成的任何损伤; 并将电致发光器件并入CMOS IC。根据本发明的方法制造的电致发光器件包括：衬底，形成在栅极氧化物层上的用于发射预定波长的光的稀土掺杂富硅层; 在稀土掺杂的富硅层上形成的顶部电极; 并在其附近制造相关的CMOS IC结构。

4. 发明申请

US20060172555A1 Method to make silicon nanoparticle from silicon rich-oxide by DC reactive sputtering for electroluminescence application 审中-公开
标题翻译：通过用于电致发光应用的DC反应溅射从富硅氧化物制造硅纳米颗粒的方法
公开(公告)号：US20060172555A1
公开(公告)日：2006-08-03
申请号：US11049594
申请日：2005-02-01
申请人： Wei Gao , Tingkai Li , Yoshi Ono , Sheng Hsu
发明人： Wei Gao , Tingkai Li , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/31
CPC分类号： C23C14/5806 , C23C14/10
摘要： A method of forming a silicon-rich silicon oxide layer having nanometer sized silicon particles therein includes preparing a substrate; preparing a target; placing the substrate and the target in a sputtering chamber; setting the sputtering chamber parameters; depositing material from the target onto the substrate to form a silicon-rich silicon oxide layer; and annealing the substrate to form nanometer sized silicon particles therein.
摘要翻译：形成其中具有纳米尺寸硅颗粒的富硅氧化硅层的方法包括制备衬底; 准备一个目标将基板和靶放置在溅射室中; 设置溅射室参数; 将材料从靶材沉积到衬底上以形成富硅氧化硅层; 并对衬底退火以在其中形成纳米尺寸的硅颗粒。

5. 发明授权

US06833572B2 Electrode materials with improved hydrogen degradation resistance 失效
标题翻译：具有改善耐氢降解性的电极材料
公开(公告)号：US06833572B2
公开(公告)日：2004-12-21
申请号：US10229603
申请日：2002-08-27
申请人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
发明人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L21/31604 , H01L21/31683 , H01L28/55
摘要： An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.
摘要翻译：用于铁电体器件的电极包括底部电极; 铁电层以及形成在强电介质层上并由金属组合形成的顶部电极，其包括从由铂和铱组成的金属组中的第一金属取得的金属和从由铝和钛组成的金属组中的第二金属; 其中所述顶部电极用作钝化层，并且其中所述顶部电极在氢气氛中的高温退火之后保持导电。在铁电体器件中形成耐氢电极的方法包括形成底电极; 在底部电极上形成铁电层; 在铁电层上沉积顶部电极; 包括同时从由铂和铱组成的金属组中取出的第一金属; 和从由铝和钛组成的金属组中获取的第二金属; 以及通过在氧气氛中对所述结构退火以在所述顶部电极上形成氧化物钝化层来形成钝化层。

6. 发明授权

US06410346B1 Method of forming ferroelastic lead germanate thin films 有权
标题翻译：形成铁弹性锗酸铅薄膜的方法
公开(公告)号：US06410346B1
公开(公告)日：2002-06-25
申请号：US10010186
申请日：2001-12-06
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , C23C16/40 , H01L21/02271 , H01L21/31604 , H01L21/31691
摘要： A Pb3GeO5 phase PGO thin film is provided. This film has ferroelastic properties that make it ideal for many microelectromechanical applications or as decoupling capacitors in high speed multichip modules. This PGO film is uniquely formed in a MOCVD process that permits a thin film, less than 1 mm, of material to be deposited. The process mixes Pd and germanium in a solvent. The solution is heated to form a precursor vapor which is decomposed. The method provides deposition temperatures and pressures. The as-deposited film is also annealed to enhanced the film's ferroelastic characteristics. A ferroelastic capacitor made from the present invention PGO film is also provided.
摘要翻译：提供Pb3GeO5相PGO薄膜。该薄膜具有铁弹性，使其成为许多微机电应用或高速多芯片模块中的去耦电容器的理想选择。该PGO膜在MOCVD工艺中唯一形成，其允许沉积小于1mm的薄膜。该方法在溶剂中混合Pd和锗。将溶液加热以形成分解的前体蒸汽。该方法提供沉积温度和压力。沉积的膜也被退火以增强膜的铁弹性特征。还提供了由本发明PGO膜制成的铁弹性电容器。

7. 发明授权

US07585788B2 Rare earth element-doped oxide precursor with silicon nanocrystals 失效
标题翻译：具有硅纳米晶体的稀土元素掺杂氧化物前体
公开(公告)号：US07585788B2
公开(公告)日：2009-09-08
申请号：US11224549
申请日：2005-09-12
申请人： Wei-Wei Zhuang , Yoshi Ono , Sheng Teng Hsu , Tingkai Li
发明人： Wei-Wei Zhuang , Yoshi Ono , Sheng Teng Hsu , Tingkai Li
IPC分类号： H01L21/31
CPC分类号： H01L21/02156 , H01L21/02282 , H01L21/316
摘要： A method is provided for forming a rare earth element-doped silicon oxide (SiO2) precursor with nanocrystalline (nc) Si particles. In one aspect the method comprises: mixing Si particles into a first organic solvent, forming a first solution with a first boiling point; filtering the first solution to remove large Si particles; mixing a second organic solvent having a second boiling point, higher than the first boiling point, to the filtered first solution; and, fractionally distilling, forming a second solution of nc Si particles. The Si particles are formed by immersing a Si wafer into a third solution including hydrofluoric (HF) acid and alcohol, applying an electric bias, and forming a porous Si layer overlying the Si wafer. Then, the Si particles are mixed into the organic solvent by depositing the Si wafer into the first organic solvent, and ultrasonically removing the porous Si layer from the Si wafer.
摘要翻译：提供了一种用于形成具有纳米晶体（nc）Si颗粒的稀土元素掺杂的氧化硅（SiO 2）前体的方法。一方面，该方法包括：将Si颗粒混合到第一有机溶剂中，形成具有第一沸点的第一溶液; 过滤第一溶液以除去大的Si颗粒; 将具有高于第一沸点的第二沸点的第二有机溶剂与过滤的第一溶液混合; 并分馏，形成nc Si颗粒的第二溶液。通过将Si晶片浸入包括氢氟酸（HF）酸和醇的第三溶液中，施加电偏压并形成覆盖Si晶片的多孔Si层，形成Si颗粒。然后，通过将Si晶片沉积到第一有机溶剂中，将Si颗粒混入有机溶剂中，并从Si晶片超声波除去多孔Si层。

8. 发明授权

US07544625B2 Silicon oxide thin-films with embedded nanocrystalline silicon 有权
标题翻译：具有嵌入式纳米晶硅的氧化硅薄膜
公开(公告)号：US07544625B2
公开(公告)日：2009-06-09
申请号：US11418273
申请日：2006-05-04
申请人： Pooran Chandra Joshi , Tingkai Li , Yoshi Ono , Apostolos T. Voutsas , John W. Hartzell
发明人： Pooran Chandra Joshi , Tingkai Li , Yoshi Ono , Apostolos T. Voutsas , John W. Hartzell
IPC分类号： H01L21/31
CPC分类号： H01L21/31608 , C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/0234
摘要： A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate, using a high-density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, the SiOx thin-film is embedded with nanocrystalline Si. The HD PECVD process may use an inductively coupled plasma (ICP) source, a substrate temperature of less than about 400° C., and an oxygen source gas with a silicon precursor. In one aspect, a hydrogen source gas and an inert gas are used, where the ratio of oxygen source gas to inert gas is in the range of about 0.02 to 5. The SiOx thin-film with embedded nanocrystalline Si typically has a refractive index in the range of about 1.6 to 2.2, with an extinction coefficient in the range of 0 to 0.5.
摘要翻译：提供了一种用嵌入式纳米晶硅（Si）形成氧化硅（SiOx）薄膜的方法。该方法使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺沉积SiO x，其中x在1至2的范围内，覆盖在衬底上。结果，SiO x薄膜埋入有纳米晶体Si。 HD PECVD工艺可以使用电感耦合等离子体（ICP）源，小于约400℃的衬底温度，以及具有硅前体的氧源气体。一方面，使用氢源气体和惰性气体，其中氧源气体与惰性气体的比例在约0.02至5的范围内。具有嵌入的纳米晶体硅的SiO x薄膜通常具有折射率约1.6至2.2的范围，消光系数在0至0.5的范围内。

9. 发明申请

US20060180816A1 Wide wavelength range silicon electroluminescence device 审中-公开
标题翻译：宽波长范围的硅电致发光器件
公开(公告)号：US20060180816A1
公开(公告)日：2006-08-17
申请号：US11058505
申请日：2005-02-14
申请人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Hsu
发明人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Hsu
IPC分类号： H01L29/26
CPC分类号： H05B33/145
摘要： A method is provided for forming a Si electroluminescence (EL) device for emitting light at short wavelengths. The method comprises: providing a substrate; forming a first insulator layer overlying the substrate; forming a silicon-rich silicon oxide (SRSO) layer overlying the first insulator layer, embedded with nanocrystalline Si having a size in the range of 0.5 to 5 nm; forming a second insulator layer overlying the SRSO layer; and, forming a top electrode. Typically, the SRSO has a Si richness in the range of 5 to 40%. In one aspect, the SRSO layer is formed using a DC sputtering process. In another aspect, the SRSO formation step includes a rapid thermal annealing (RTA) process subsequent to depositing the SRSO. Likewise, thermal oxidation or plasma oxidation can be performed subsequent to the SRSO layer deposition. The size of Si nanocrystals is decreased in response to above-mentioned deposition, annealing, and oxidation processes.
摘要翻译：提供一种用于形成用于发射短波长的光的Si电致发光（EL）装置的方法。该方法包括：提供衬底; 形成覆盖所述衬底的第一绝缘体层; 形成覆盖在第一绝缘体层上的富硅氧化物（SRSO）层，其中嵌入尺寸在0.5至5nm范围内的纳米晶体Si; 形成覆盖所述SRSO层的第二绝缘体层; 并形成顶部电极。通常，SRSO的Si浓度范围为5〜40％。在一个方面，使用DC溅射工艺形成SRSO层。另一方面，SRSO形成步骤包括在沉积SRSO之后的快速热退火（RTA）工艺。同样地，可以在SRSO层沉积之后进行热氧化或等离子体氧化。响应于上述沉积，退火和氧化过程，Si纳米晶体的尺寸减小。

10. 发明申请

US20060160335A1 Rare earth element-doped silicon/silicon dioxide lattice structure 失效
标题翻译：稀土元素掺杂硅/二氧化硅晶格结构
公开(公告)号：US20060160335A1
公开(公告)日：2006-07-20
申请号：US11039463
申请日：2005-01-19
申请人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Hsu
发明人： Tingkai Li , Wei Gao , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/20
CPC分类号： C23C14/16 , C03C17/34 , C23C14/10 , C23C28/322 , C23C28/323 , C23C28/345 , C23C28/3455 , C23C28/42 , H01L21/02164 , H01L21/02266 , H01L21/0237 , H01L21/02532 , H01L21/02573 , H01L21/0259 , H01L21/02631 , H01L21/02667 , H01L21/31608 , H01L33/26
摘要： Provided are an electroluminescence (EL) device and corresponding method for forming a rare earth element-doped silicon (Si)/Si dioxide (SiO2) lattice structure. The method comprises: providing a substrate; DC sputtering a layer of amorphous Si overlying the substrate; DC sputtering a rare earth element; in response, doping the Si layer with the rare earth element; DC sputtering a layer of SiO2 overlying the rare earth-doped Si; forming a lattice structure; annealing; and, in response to the annealing, forming nanocrystals in the rare-earth doped Si having a grain size in the range of 1 to 5 nanometers (nm). In one aspect, the rare earth element and Si are co-DC sputtered. Typically, the steps of DC sputtering Si, DC sputtering the rare earth element, and DC sputtering the SiO2 are repeated 5 to 60 cycles, so that the lattice structure includes the plurality (5-60) of alternating SiO2 and rare earth element-doped Si layers.
摘要翻译：提供了一种用于形成稀土元素掺杂硅（Si）/二氧化硅（SiO 2）晶格结构的电致发光（EL）器件和相应的方法。该方法包括：提供衬底; DC溅射覆盖衬底的非晶硅层; 直流溅射稀土元素; 作为响应，用稀土元素掺杂Si层; DC溅射一层SiO 2，覆盖稀土掺杂的Si; 形成晶格结构; 退火; 并且响应于退火，在具有1至5纳米（nm）范围内的晶粒尺寸的稀土掺杂Si中形成纳米晶体。一方面，稀土元素和Si共溅射。通常，DC溅射Si，DC溅射稀土元素和DC溅射SiO 2的步骤重复5至60个循环，使得晶格结构包括多个（5-60）交替的SiO 2和稀土元素掺杂 Si层。

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