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1. 发明授权

US06833572B2 Electrode materials with improved hydrogen degradation resistance 失效
标题翻译：具有改善耐氢降解性的电极材料
公开(公告)号：US06833572B2
公开(公告)日：2004-12-21
申请号：US10229603
申请日：2002-08-27
申请人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
发明人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2976
CPC分类号： H01L28/75 , H01L21/31604 , H01L21/31683 , H01L28/55
摘要： An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.
摘要翻译：用于铁电体器件的电极包括底部电极; 铁电层以及形成在强电介质层上并由金属组合形成的顶部电极，其包括从由铂和铱组成的金属组中的第一金属取得的金属和从由铝和钛组成的金属组中的第二金属; 其中所述顶部电极用作钝化层，并且其中所述顶部电极在氢气氛中的高温退火之后保持导电。在铁电体器件中形成耐氢电极的方法包括形成底电极; 在底部电极上形成铁电层; 在铁电层上沉积顶部电极; 包括同时从由铂和铱组成的金属组中取出的第一金属; 和从由铝和钛组成的金属组中获取的第二金属; 以及通过在氧气氛中对所述结构退火以在所述顶部电极上形成氧化物钝化层来形成钝化层。

2. 发明授权

US06440752B1 Electrode materials with improved hydrogen degradation resistance and fabrication method 失效
标题翻译：具有改善耐氢降解性的电极材料和制造方法
公开(公告)号：US06440752B1
公开(公告)日：2002-08-27
申请号：US09817712
申请日：2001-03-26
申请人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
发明人： Fengyan Zhang , Tingkai Li , Hong Ying , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01G706
CPC分类号： H01L28/75 , H01L21/31604 , H01L21/31683 , H01L28/55
摘要： An electrode for use in a ferroelectric device includes a bottom electrode; a ferroelectric layer; and a top electrode formed on the ferroelectric layer and formed of a combination of metals, including a first metal take from the group of metals consisting of platinum and iridium, and a second metal taken from the group of metals consisting of aluminum and titanium; wherein the top electrode acts as a passivation layer and wherein the top electrode remains conductive following high temperature annealing in a hydrogen atmosphere. A method of forming a hydrogen-resistant electrode in a ferroelectric device includes forming a bottom electrode; forming a ferroelectric layer on the bottom electrode; depositing a top electrode on the ferroelectric layer; including depositing, simultaneously, a first metal taken from the group of metals consisting of platinum and iridium; and a second metal taken from the group of metals consisting of aluminum and titanium; and forming a passivation layer by annealing the structure in an oxygen atmosphere to form an oxide passivation layer on the top electrode.
摘要翻译：用于铁电体器件的电极包括底部电极; 铁电层; 以及形成在强电介质层上并由金属组合形成的顶部电极，其包括从由铂和铱组成的金属组中的第一金属取得的金属和从由铝和钛组成的金属组中的第二金属; 其中所述顶部电极用作钝化层，并且其中所述顶部电极在氢气氛中的高温退火之后保持导电。在铁电体器件中形成耐氢电极的方法包括形成底电极; 在底部电极上形成铁电层; 在铁电层上沉积顶部电极; 包括同时从由铂和铱组成的金属组中取出的第一金属; 和从由铝和钛组成的金属组中获取的第二金属; 以及通过在氧气氛中对所述结构退火以在所述顶部电极上形成氧化物钝化层来形成钝化层。

3. 发明授权

US06410346B1 Method of forming ferroelastic lead germanate thin films 有权
标题翻译：形成铁弹性锗酸铅薄膜的方法
公开(公告)号：US06410346B1
公开(公告)日：2002-06-25
申请号：US10010186
申请日：2001-12-06
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , C23C16/40 , H01L21/02271 , H01L21/31604 , H01L21/31691
摘要： A Pb3GeO5 phase PGO thin film is provided. This film has ferroelastic properties that make it ideal for many microelectromechanical applications or as decoupling capacitors in high speed multichip modules. This PGO film is uniquely formed in a MOCVD process that permits a thin film, less than 1 mm, of material to be deposited. The process mixes Pd and germanium in a solvent. The solution is heated to form a precursor vapor which is decomposed. The method provides deposition temperatures and pressures. The as-deposited film is also annealed to enhanced the film's ferroelastic characteristics. A ferroelastic capacitor made from the present invention PGO film is also provided.
摘要翻译：提供Pb3GeO5相PGO薄膜。该薄膜具有铁弹性，使其成为许多微机电应用或高速多芯片模块中的去耦电容器的理想选择。该PGO膜在MOCVD工艺中唯一形成，其允许沉积小于1mm的薄膜。该方法在溶剂中混合Pd和锗。将溶液加热以形成分解的前体蒸汽。该方法提供沉积温度和压力。沉积的膜也被退火以增强膜的铁弹性特征。还提供了由本发明PGO膜制成的铁弹性电容器。

4. 发明授权

US06495378B2 Ferroelastic lead germanate thin film and deposition method 有权
标题翻译：铁硬脂酸铅薄膜和沉积方法
公开(公告)号：US06495378B2
公开(公告)日：2002-12-17
申请号：US09814273
申请日：2001-03-21
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , C23C16/40 , H01L21/02271 , H01L21/31604 , H01L21/31691
摘要： A Pb3GeO5 phase PGO thin film is provided. This film has ferroelastic properties that make it ideal for many microelectromechanical applications or as decoupling capacitors in high speed multichip modules. This PGO film is uniquely formed in a MOCVD process that permits a thin film, less than 1 mm, of material to be deposited. The process mixes Pd and germanium in a solvent. The solution is heated to form a precursor vapor which is decomposed. The method provides deposition temperatures and pressures. The as-deposited film is also annealed to enhanced the film's ferroelastic characteristics. A ferroelastic capacitor made from the present invention PGO film is also provided.
摘要翻译：提供Pb3GeO5相PGO薄膜。该薄膜具有铁弹性，使其成为许多微机电应用或高速多芯片模块中的去耦电容器的理想选择。该PGO膜在MOCVD工艺中唯一形成，其允许沉积小于1mm的薄膜。该方法将Pd和锗在溶剂中混合。将溶液加热以形成分解的前体蒸汽。该方法提供沉积温度和压力。沉积的膜也被退火以增强膜的铁弹性特征。还提供了由本发明PGO膜制成的铁弹性电容器。

5. 发明授权

US06190925B1 Epitaxially grown lead germanate film and deposition method 有权
标题翻译：外延生长的锗酸铅膜和沉积法
公开(公告)号：US06190925B1
公开(公告)日：2001-02-20
申请号：US09302272
申请日：1999-04-28
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L21/31604 , C23C16/40 , H01L21/31691 , Y10S438/933
摘要： The present invention provides a substantially single crystal PGO film with optimal the ferroelectric properties. The PGO film and adjacent electrodes are epitaxially grown to minimize mismatch between the structures. MOCVD deposition methods and RTP annealing procedures permit a PGO film to be epitaxially grown in commercial fabrication processes. These epitaxial ferroelectric have application in FeRAM memory devices. The present invention deposition method epitaxially grows ferroelectric Pb5Ge3O11 thin films along with c-axis orientation.
摘要翻译：本发明提供了具有最佳铁电性能的基本单晶PGO膜。 PGO膜和相邻电极被外延生长以最小化结构之间的失配。 MOCVD沉积方法和RTP退火程序允许PGO膜在商业制造工艺中外延生长。这些外延铁电体已经应用于FeRAM存储器件中。本发明沉积方法外延生长铁电Pb5Ge3O11薄膜以及c轴取向。

6. 发明授权

US06616857B2 C-axis oriented lead germanate film 失效
标题翻译： C轴取向锗酸铅膜
公开(公告)号：US06616857B2
公开(公告)日：2003-09-09
申请号：US09942203
申请日：2001-08-29
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01B108
CPC分类号： H01L21/31691 , C23C16/40 , H01L21/31604 , Y10S438/933 , Y10T428/12674 , Y10T428/12701 , Y10T428/12875
摘要： A ferroelectric Pb5Ge3O11 (PGO) thin film is provided with a metal organic vapor deposition (MOCVD) process and RTP (Rapid Thermal Process) annealing techniques. The PGO film is substantially crystallization with c-axis orientation at temperature between 450 and 650° C. The PGO film has an average grain size of about 0.5 microns, with a deviation in grain size uniformity of less than 10%. Good ferroelectric properties are obtained for a 150 nm thick film with Ir electrodes. The films also show fatigue-free characteristics: no fatigue was observed up to 1×109 switching cycles. The leakage currents increase with increasing applied voltage, and are about 3.6×10−7 A/cm2 at 100 kV/cm. The dielectric constant shows a behavior similar to most ferroelectric materials, with a maximum dielectric constant of about 45. These high quality MOCVD Pb5Ge3O11 films can be used for high density single transistor ferroelectric memory applications because of the homogeneity of the PGO film grain size.
摘要翻译：铁电Pb5Ge3O11（PGO）薄膜提供金属有机气相沉积（MOCVD）工艺和RTP（快速热处理）退火技术。 PGO膜在450-650℃的温度下基本上以c轴取向结晶.PGO膜的平均粒径为约0.5微米，晶粒尺寸均匀度的偏差小于10％。对于具有Ir电极的150nm厚的膜，获得良好的铁电性能。这些胶片还显示出无疲劳特性：在1x109个开关周期内没有观察到疲劳。泄漏电流随着施加电压的增加而增加，在100kV / cm时为约3.6×10 -7 A / cm 2。介电常数表现出类似于大多数铁电材料的行为，其最大介电常数为约45.这些高质量的MOCVD Pb5Ge3O11膜可用于高密度单晶硅铁氧体存储器应用，因为PGO膜晶粒尺寸的均匀性。

7. 发明授权

US06410343B1 C-axis oriented lead germanate film and deposition method 失效
标题翻译： C轴取向锗酸铅膜和沉积法
公开(公告)号：US06410343B1
公开(公告)日：2002-06-25
申请号：US09301420
申请日：1999-04-28
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2100
CPC分类号： H01L21/31691 , C23C16/40 , H01L21/31604 , Y10S438/933 , Y10T428/12674 , Y10T428/12701 , Y10T428/12875
摘要： A ferroelectric Pb5Ge3O11 (PGO) thin film is provided with a metal organic vapor deposition (MOCVD) process and RTP (Rapid Thermal Process) annealing techniques. The PGO film is substantially crystallization with c-axis orientation at temperature between 450 and 650° C. The PGO film has an average grain size of about 0.5 microns, with a deviation in grain size uniformity of less than 10%. Good ferroelectric properties are obtained for a 150 nm thick film with Ir electrodes. The films also show fatigue-free characteristics: no fatigue was observed up to 1×109 switching cycles. The leakage currents increase with increasing applied voltage, and are about 3.6×10−7A/cm2 at 100 kV/cm. The dielectric constant shows a behavior similar to most ferroelectric materials, with a maximum dielectric constant of about 45. These high quality MOCVD Pb5Ge3O11 films can be used for high density single transistor ferroelectric memory applications because of the homogeneity of the PGO film grain size.
摘要翻译：铁电Pb5Ge3O11（PGO）薄膜提供金属有机气相沉积（MOCVD）工艺和RTP（快速热处理）退火技术。 PGO膜在450-650℃的温度下基本上以c轴取向结晶.PGO膜的平均粒径为约0.5微米，晶粒尺寸均匀度的偏差小于10％。对于具有Ir电极的150nm厚的膜，获得良好的铁电性能。这些胶片还显示出无疲劳特性：在1x109个开关周期内没有观察到疲劳。泄漏电流随着施加电压的增加而增加，在100kV / cm时为约3.6×10 -7 A / cm 2。介电常数表现出类似于大多数铁电材料的行为，其最大介电常数为约45.这些高质量的MOCVD Pb5Ge3O11膜可用于高密度单晶硅铁氧体存储器应用，因为PGO膜晶粒尺寸的均匀性。

8. 发明授权

US06590243B2 Ferroelastic lead germanate thin film and deposition method 失效
公开(公告)号：US06590243B2
公开(公告)日：2003-07-08
申请号：US09301434
申请日：1999-04-28
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2976
CPC分类号： H01L21/02197 , C23C16/40 , H01L21/02271 , H01L21/31604 , H01L21/31691
摘要： A Pb3GeO5 phase PGO thin film is provided. This film has ferroelastic properties that make it ideal for many microelectromechanical applications or as decoupling capacitors in high speed multichip modules. This PGO film is uniquely formed in a MOCVD process that permits a thin film, less than 1 mm, of material to be deposited. The process mixes Pd and germanium in a solvent. The solution is heated to form a precursor vapor which is decomposed. The method provides deposition temperatures and pressures. The as-deposited film is also annealed to enhanced the film's ferroelastic characteristics. A ferroelastic capacitor made from the present invention PGO film is also provided.

9. 发明授权

US06737693B2 Ferroelastic integrated circuit device 失效
标题翻译：铁磁集成电路器件
公开(公告)号：US06737693B2
公开(公告)日：2004-05-18
申请号：US10412890
申请日：2003-04-14
申请人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
发明人： Tingkai Li , Fengyan Zhang , Yoshi Ono , Sheng Teng Hsu
IPC分类号： H01L2976
CPC分类号： H01L21/02197 , C23C16/40 , H01L21/02271 , H01L21/31604 , H01L21/31691
摘要： A Pb3GeO5 phase PGO thin film is provided. This film has ferroelastic properties that make it ideal for many microelectromechanical applications or as decoupling capacitors in high speed multichip modules. This PGO film is uniquely formed in a MOCVD process that permits a thin film, less than 1 mm, of material to be deposited. The process mixes Pd and germanium in a solvent. The solution is heated to form a precursor vapor which is decomposed. The method provides deposition temperatures and pressures. The as-deposited film is also annealed to enhanced the film's ferroelastic characteristics. A ferroelastic capacitor made from the present invention PGO film is also provided.
摘要翻译：提供Pb3GeO5相PGO薄膜。该薄膜具有铁弹性，使其成为许多微机电应用或高速多芯片模块中的去耦电容器的理想选择。该PGO膜在MOCVD工艺中唯一形成，其允许沉积小于1mm的薄膜。该方法将Pd和锗在溶剂中混合。将溶液加热以形成分解的前体蒸汽。该方法提供沉积温度和压力。沉积的膜也被退火以增强膜的铁弹性特征。还提供了由本发明PGO膜制成的铁弹性电容器。

10. 发明授权

US06720258B2 Method of fabricating a nickel silicide on a substrate 有权
标题翻译：在衬底上制造硅化镍的方法
公开(公告)号：US06720258B2
公开(公告)日：2004-04-13
申请号：US10319313
申请日：2002-12-12
申请人： Jer-shen Maa , Douglas J. Tweet , Yoshi Ono , Fengyan Zhang , Sheng Teng Hsu
发明人： Jer-shen Maa , Douglas J. Tweet , Yoshi Ono , Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L2144
CPC分类号： H01L21/28518 , H01L29/456
摘要： An integrated circuit device, and a method of manufacturing the same, comprises an epitaxial nickel silicide on (100) Si, or a stable nickel silicide on amorphous Si, fabricated with a cobalt interlayer. In one embodiment the method comprises depositing a cobalt (Co) interface layer between the Ni and Si layers prior to the silicidation reaction. The cobalt interlayer regulates the flux of the Ni atoms through the cobalt/nickel/silicon alloy layer formed from the reaction of the cobalt interlayer with the nickel and the silicon so that the Ni atoms reach the Si interface at a similar rate, i.e., without any orientation preference, so as to form a uniform layer of nickel silicide. The nickel silicide may be annealed to form a uniform crystalline nickel disilicide. Accordingly, a single crystal nickel silicide on (100) Si or on amorphous Si is achieved wherein the nickel silicide has improved stability and may be utilized in ultra-shallow junction devices.
摘要翻译：集成电路器件及其制造方法包括在（100）Si上的外延硅化镍，或者由钴中间层制造的在非晶Si上的稳定的硅化镍。在一个实施方案中，该方法包括在硅化反应之前在Ni和Si层之间沉积钴（Co）界面层。钴中间层通过由钴中间层与镍和硅的反应形成的钴/镍/硅合金层调节Ni原子的通量，使得Ni原子以相似的速率到达Si界面，即没有任何取向偏好，从而形成均匀的硅化镍层。可以将镍硅化物退火以形成均匀的结晶二硅化镍。因此，实现了（100）Si或非晶Si上的单晶硅化镍，其中硅化镍具有改进的稳定性并可用于超浅结结器件中。

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