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1. 发明申请

US20060110939A1 Enhanced thin-film oxidation process 有权
标题翻译：增强薄膜氧化工艺
公开(公告)号：US20060110939A1
公开(公告)日：2006-05-25
申请号：US11327612
申请日：2006-01-06
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/31
CPC分类号： H01L21/31608 , H01L21/02164 , H01L21/02323 , H01L21/0234 , H01L21/02359 , H01L21/3105 , H01L21/31662
摘要： A method is provided for additionally oxidizing a thin-film oxide. The method includes: providing a substrate; depositing an MyOx (M oxide) layer overlying the substrate, where M is a solid element having an oxidation state in a range of +2 to +5; treating the MyOx layer to a high density plasma (HDP) source; and, forming an MyOk layer in response to the HDP source, where k>x. In one aspect, the method further includes decreasing the concentration of oxide charge in response to forming the MyOk layer. In another aspect, the MyOx layer is deposited with an impurity N, and the method further includes creating volatile N oxides in response to forming the MyOk layer. For example, the impurity N may be carbon and the method creates a volatile carbon oxide.
摘要翻译：提供了另外氧化薄膜氧化物的方法。该方法包括：提供衬底; 沉积覆盖衬底的MyOx（M氧化物）层，其中M是具有+2至+5范围内的氧化态的固体元素; 将MyOx层处理成高密度等离子体（HDP）源; 并且响应于HDP源形成MyOk层，其中k> x。在一个方面，该方法还包括响应于形成MyOk层而降低氧化物电荷的浓度。在另一方面，MyOx层沉积有杂质N，并且该方法还包括响应于形成MyOk层而产生挥发性N氧化物。例如，杂质N可以是碳，并且该方法产生挥发性碳氧化物。

2. 发明申请

US20100151152A1 Non-Stoichiometric SiOxNy Optical Filter Fabrication 审中-公开
标题翻译：非化学计量的SiOxNy光学滤波器制造
公开(公告)号：US20100151152A1
公开(公告)日：2010-06-17
申请号：US12700395
申请日：2010-02-04
申请人： Pooran Joshi , Apostolos T. Voutsas , John W. Hartzell
发明人： Pooran Joshi , Apostolos T. Voutsas , John W. Hartzell
IPC分类号： C23C16/34 , C23C16/42 , B05D5/06
CPC分类号： G02B5/286 , Y10T428/259
摘要： A non-stoichiometric SiOXNY thin-film optical filter is provided. The filter is formed from a substrate and a first non-stoichiometric SiOX1NY1 thin-film overlying the substrate, where (X1+Y1 0). The first non-stoichiometric SiOX1NY1 thin-film has a refractive index (n1) in the range of about 1.46 to 3, and complex refractive index (N1=n1+ik1), where k1 is an extinction coefficient in a range of about 0 to 0.5. The first non-stoichiometric SiOX1NY1 thin-film may be either intrinsic or doped. In one aspect, the first non-stoichiometric SiOX1NY1 thin-film has nanoparticles with a size in the range of about 1 to 10 nm. A second non-stoichiometric SiOX2NY2 thin-film may overlie the first non-stoichiometric SiOX1NY1 thin-film, where Y1≠Y2. The second non-stoichiometric SiOX1NY1 thin-film may be intrinsic and doped. In another variation, a stoichiometric SiOX2NY2 thin-film, intrinsic or doped, overlies the first non-stoichiometric SiOX1NY1 thin-film.
摘要翻译：提供非化学计量的SiOXNY薄膜滤光片。滤光片由衬底和覆盖衬底的第一非化学计量的SiOX1NY1薄膜形成，其中（X1 + Y1 <2和Y1> 0）。第一非化学计量的SiOX1NY1薄膜的折射率（n1）在约1.46至3的范围内，复数折射率（N1 = n1 + ik1），其中k1是约0至 0.5。第一非化学计量的SiOX1NY1薄膜可以是固有的或掺杂的。在一个方面，第一非化学计量的SiOX1NY1薄膜具有尺寸在约1至10nm范围内的纳米颗粒。第二非化学计量的SiOX2NY2薄膜可以覆盖第一非化学计量的SiOX1NY1薄膜，其中Y1≠Y2。第二非化学计量的SiOX1NY1薄膜可以是固有的和掺杂的。在另一个实施方案中，本征或掺杂的化学计量的SiOX2NY2薄膜覆盖在第一非化学计量的SiOX1NY1薄膜上。

3. 发明申请

US20060211267A1 Silicon oxide thin-films with embedded nanocrystalline silicon 有权
公开(公告)号：US20060211267A1
公开(公告)日：2006-09-21
申请号：US11418273
申请日：2006-05-04
申请人： Pooran Joshi , Tingkai Li , Yoshi Ono , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Tingkai Li , Yoshi Ono , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/31
CPC分类号： H01L21/31608 , C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/0234
摘要： A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate, using a high-density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, the SiOx thin-film is embedded with nanocrystalline Si. The HD PECVD process may use an inductively coupled plasma (ICP) source, a substrate temperature of less than about 400° C., and an oxygen source gas with a silicon precursor. In one aspect, a hydrogen source gas and an inert gas are used, where the ratio of oxygen source gas to inert gas is in the range of about 0.02 to 5. The SiOx thin-film with embedded nanocrystalline Si typically has a refractive index in the range of about 1.6 to 2.2, with an extinction coefficient in the range of 0 to 0.5.

4. 发明申请

US20050202662A1 Method for fabricating oxide thin films 失效
标题翻译：氧化物薄膜的制造方法
公开(公告)号：US20050202662A1
公开(公告)日：2005-09-15
申请号：US10801374
申请日：2004-03-15
申请人： Pooran Joshi , Apostolos Voutsas
发明人： Pooran Joshi , Apostolos Voutsas
IPC分类号： H01L21/316 , H01L21/31 , H01L21/3205 , H01L21/336 , H01L21/469 , H01L21/4763 , H01L29/786
CPC分类号： H01L21/02164 , C23C16/402 , H01J37/321 , H01J37/32165 , H01J37/32706 , H01L21/02238 , H01L21/02252 , H01L21/02274 , H01L21/32105 , H01L29/4908
摘要： A method for fabricating a thin film oxide is provided. The method includes: forming a substrate; treating the substrate at temperatures equal to and less than 360° C. using a high density (HD) plasma source; and forming an M oxide layer overlying the substrate where M is an element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5. In some aspects, the method uses an inductively coupled plasma (ICP) source. In some aspects the ICP source is used to plasma oxidize the substrate. In other aspects, HD plasma enhanced chemical vapor deposition is used to deposit the M oxide layer on the substrate. In some aspects of the method, M is silicon and a silicon layer and an oxide layer are incorporated into a TFT.
摘要翻译：提供了制造薄膜氧化物的方法。该方法包括：形成衬底; 使用高密度（HD）等离子体源在等于或小于360℃的温度下处理衬底; 以及在衬底上形成M氧化物层，其中M是选自化学上定义为固体并具有+2至+5范围内的氧化态的元素的基团的元素。在一些方面，该方法使用电感耦合等离子体（ICP）源。在某些方面，ICP源用于等离子体氧化底物。在其他方面，使用HD等离子体增强化学气相沉积在基底上沉积M氧化物层。在该方法的一些方面，M是硅，并且硅层和氧化物层被结合到TFT中。

5. 发明申请

US20050136695A1 Thin film oxide interface 失效
标题翻译：薄膜氧化物界面
公开(公告)号：US20050136695A1
公开(公告)日：2005-06-23
申请号：US11046571
申请日：2005-01-28
申请人： Pooran Joshi , John Hartzell , Masahiro Adachi , Yoshi Ono
发明人： Pooran Joshi , John Hartzell , Masahiro Adachi , Yoshi Ono
IPC分类号： H01L21/316 , H01L21/336 , H01L29/49 , H01L29/786 , H01L23/58 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/66772
摘要： An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.
摘要翻译：提供氧化物界面和制造氧化物界面的方法。该方法包括形成硅层和覆盖硅层的氧化物层。使用电感耦合等离子体源在低于400℃的温度下形成氧化物层。在该方法的一些方面，氧化物层的厚度大于20纳米（nm），折射率在1.45和1.47之间。在该方法的一些方面，通过等离子体氧化硅层形成氧化物层，以每分钟高达约4.4nm的速率产生等离子体氧化物（1分钟后）。在该方法的某些方面，使用高密度等离子体增强化学气相沉积（HD-PECVD）工艺来形成氧化物层。在该方法的一些方面，将硅和氧化物层结合到薄膜晶体管中。

6. 发明申请

US20070155137A1 High density plasma non-stoichiometric SiOxNy films 有权
标题翻译：高密度等离子体非化学计量的SiOxNy薄膜
公开(公告)号：US20070155137A1
公开(公告)日：2007-07-05
申请号：US11698623
申请日：2007-01-26
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/20
CPC分类号： G02B1/10 , C23C16/308 , C23C16/509 , G02B1/11
摘要： A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.
摘要翻译：提供了高密度等离子体法，用于形成SiO x N N Y Y薄膜。该方法提供衬底并引入硅（Si）前体。使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。结果，形成SiO（X + Y <2和Y> 0）的SiO N 薄膜。 SiO 2薄膜可以是化学计量的或非化学计量的。 SiO 2薄膜可以分级，这意味着X和Y的值随着SiO 2 X N的厚度而变化， SUB> Y 薄膜。此外，该方法能够实现SiO 2薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的，以及上述类型的SiO x N N Y Y薄膜的组合。

7. 发明申请

US20070013035A1 Oxide interface with improved oxygen bonding 有权
标题翻译：具有改善氧键的氧化物界面
公开(公告)号：US20070013035A1
公开(公告)日：2007-01-18
申请号：US11524783
申请日：2006-09-21
申请人： Pooran Joshi
发明人： Pooran Joshi
IPC分类号： H01L23/58
CPC分类号： H01L29/78603 , H01L29/4908 , H01L29/66757 , H01L29/78609
摘要： A deposition oxide interface with improved oxygen bonding and a method for bonding oxygen in an oxide layer are provided. The method includes depositing an M oxide layer where M is a first element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5, plasma oxidizing the M oxide layer at a temperature of less than 400° C. using a high density plasma source, and in response to plasma oxidizing the M oxide layer, improving M-oxygen bonding in the M oxide layer. The plasma oxidation process diffuses excited oxygen radicals into the oxide layer. The plasma oxidation is performed at specified parameters including temperature, power density, pressure, process gas composition, and process gas flow. In some aspects of the method, M is silicon, and the oxide interface is incorporated into a thin film transistor.
摘要翻译：提供了具有改善的氧键的沉积氧化物界面和氧化层中的氧键合方法。该方法包括沉积M氧化物层，其中M是选自化学上定义为固体且具有+2至+5范围内的氧化态的元素的第一元素，在氧化层中氧化氧化层的温度为小于400℃，使用高密度等离子体源，并且响应于等离子体氧化M氧化物层，改善M氧化物层中的M-氧键。等离子体氧化过程将激发的氧自由基扩散到氧化物层中。等离子体氧化在包括温度，功率密度，压力，工艺气体成分和工艺气体流量在内的特定参数下进行。在该方法的一些方面，M是硅，并且氧化物界面被结合到薄膜晶体管中。

8. 发明申请

US20060079100A1 High density plasma grown silicon nitride 审中-公开
标题翻译：高密度等离子体生长氮化硅
公开(公告)号：US20060079100A1
公开(公告)日：2006-04-13
申请号：US11218111
申请日：2005-09-01
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/469
CPC分类号： H01L21/0217 , C23C16/24 , C23C16/45523 , C23C16/509 , H01L21/02247 , H01L21/02252 , H01L21/02329 , H01L21/0234 , H01L21/049 , H01L29/66666 , H01L29/6675
摘要： A method is provided for forming a silicon nitride (SiNx) film. The method comprises: providing a Si substrate or Si film layer; optionally maintaining a substrate temperature of about 400 degrees C., or less; performing a high-density (HD) nitrogen plasma process where a top electrode is connected to an inductively coupled HD plasma source; and, forming a grown layer of SiNx overlying the substrate. More specifically, the HD nitrogen plasma process includes using an inductively coupled plasma (ICP) source to supply power to a top electrode, independent of the power and frequency of the power that is supplied to the bottom electrode, in an atmosphere with a nitrogen source gas. The SiNx layer can be grown at an initial growth rate of at least about 20 Å in about the first minute.
摘要翻译：提供了形成氮化硅（SiNx）膜的方法。该方法包括：提供Si衬底或Si膜层; 可选地保持约400℃或更低的衬底温度; 执行高电压（HD）氮等离子体处理，其中顶电极连接到感应耦合的HD等离子体源; 并且在衬底上形成SiN x的生长层。更具体地说，HD氮等离子体处理包括使用电感耦合等离子体（ICP）源，在氮源的气氛中，独立于供给底部电极的功率的功率和频率，向顶部电极供电加油站。 SiNx层可以在大约第一分钟内以至少约的初始生长速率生长。

9. 发明申请

US20050215066A1 High density plasma process for the formation of silicon dioxide on silicon carbide substrates 有权
标题翻译：用于在碳化硅衬底上形成二氧化硅的高密度等离子体工艺
公开(公告)号：US20050215066A1
公开(公告)日：2005-09-29
申请号：US10812591
申请日：2004-03-29
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L29/872 , B05D5/12 , C23C16/02 , C23C16/40 , C23C16/509 , C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/31 , H01L21/316 , H01L21/36 , H01L21/469 , H01L29/47
CPC分类号： H01L21/049 , C23C16/0272 , C23C16/402 , C23C16/509 , H01L21/02164 , H01L21/0223 , H01L21/02238 , H01L21/02252 , H01L21/02274 , H01L21/045 , H01L21/31612
摘要： Methods are provided for forming silicon dioxide (SiO2) on a silicon carbide (SiC) substrate. The method comprises: providing a SiC substrate; supplying an atmosphere including oxygen; performing a high-density (HD) plasma-based process; and, forming a SiO2 layer overlying the SiC substrate. Typically, performing the HD plasma-based process includes connecting a top electrode to an inductively coupled HD plasma source. In one aspect, SiO2 is grown on the SiC substrate. Then, an HD plasma oxidation process is performed that creates a reactive oxygen species and breaks the Si—C bonds in the SiC substrate, to form free Si and C atoms in the SiC substrate. The free Si atoms in the SiC substrate are bonded to the HD plasma-generated reactive oxygen species, and the SiO2 layer is grown.
摘要翻译：提供了在碳化硅（SiC）衬底上形成二氧化硅（SiO 2）的方法。该方法包括：提供SiC衬底; 提供包含氧气的气氛; 执行高密度（HD）等离子体工艺; 并且形成覆盖在SiC衬底上的SiO 2层。通常，执行基于HD等离子体的工艺包括将顶部电极连接到电感耦合的HD等离子体源。在一个方面，在SiC衬底上生长SiO 2。然后，进行HD等离子体氧化处理，其产生活性氧物质并破坏SiC衬底中的Si-C键，以在SiC衬底中形成游离的Si和C原子。 SiC衬底中的自由Si原子与HD等离子体产生的活性氧结合，并且生长SiO 2层。

10. 发明申请

US20050202653A1 High density plasma process for silicon thin films 失效
标题翻译：硅薄膜的高密度等离子体工艺
公开(公告)号：US20050202653A1
公开(公告)日：2005-09-15
申请号：US10871939
申请日：2004-06-17
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L29/872 , B05D5/12 , C23C16/24 , C23C16/455 , C23C16/509 , C30B1/00 , H01L21/00 , H01L21/04 , H01L21/20 , H01L21/205 , H01L21/31 , H01L21/316 , H01L21/36 , H01L21/42 , H01L21/469 , H01L29/47 , H01L29/786
CPC分类号： C23C16/24 , C23C16/45523 , C23C16/509 , H01L21/02422 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/049 , H01L21/31612
摘要： A method is provided for forming a Si and Si—Ge thin films. The method comprises: providing a low temperature substrate material of plastic or glass; supplying an atmosphere; performing a high-density (HD) plasma process, such as an HD PECVD process using an inductively coupled plasma (ICP) source; maintaining a substrate temperature of 400 degrees C., or less; and, forming a semiconductor layer overlying the substrate that is made from Si or Si-germanium. The HD PECVD process is capable of depositing Si at a rate of greater than 100 Å per minute. The substrate temperature can be as low as 50 degrees C. Microcrystalline Si, a-Si, or a polycrystalline Si layer can be formed over the substrate. Further, the deposited Si can be either intrinsic or doped. Typically, the supplied atmosphere includes Si and H. For example, an atmosphere can be supplied including SiH4 and H2, or comprising H2 and Silane with H2/Silane ratio in the range of 0-100.
摘要翻译：提供了形成Si和Si-Ge薄膜的方法。该方法包括：提供塑料或玻璃的低温基材; 提供气氛; 执行高密度（HD）等离子体处理，例如使用电感耦合等离子体（ICP）源的HD PECVD工艺; 保持基板温度在400摄氏度以下; 并且形成由Si或Si-锗制成的衬底上的半导体层。 HD PECVD工艺能够以每分钟大于100埃的速率沉积Si。衬底温度可以低至50摄氏度。可以在衬底上形成微晶Si，a-Si或多晶Si层。此外，沉积的Si可以是固有的或掺杂的。通常，供给的气氛包括Si和H.例如，可以提供包括SiH 4和H 2的气体，或者包含H 2和硅烷，H 2 /硅烷比在0-100范围内。

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