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1. 发明申请

US20060189014A1 High-luminescence silicon electroluminescence device 失效
标题翻译：高发光硅电致发光器件
公开(公告)号：US20060189014A1
公开(公告)日：2006-08-24
申请号：US11066713
申请日：2005-02-24
申请人： Tingkai Li , Pooran Joshi , Wei Gao , Yoshi Ono , Sheng Hsu
发明人： Tingkai Li , Pooran Joshi , Wei Gao , Yoshi Ono , Sheng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L31/03046 , Y02E10/544 , Y02P70/521
摘要： A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of 1.5 to 2.1, and a porosity in the range of 5 to 20%; and, post-annealing the SRO film in an oxygen atmosphere. DC-sputtering or PECVD processes can be used to deposit the SRO film. In one aspect the method further comprises: HF buffered oxide etching (BOE) the SRO film; and, re-oxidizing the SRO film, to form a SiO2 layer around the Si nanocrystals in the SRO film. In one aspect, the SRO film is re-oxidized by annealing in an oxygen atmosphere. In this manner, a layer of SiO2 is formed around the Si nanocrystals having a thickness in the range of 1 to 5 nanometers (nm).
摘要翻译：提供一种用于形成高发光Si电致发光（EL）荧光体的方法，其具有由Si荧光体制成的EL器件。该方法包括：用Si纳米晶体沉积富含氧的氧化物（SRO）膜，折射率在1.5至2.1范围内，孔隙率在5至20％的范围内; 并且在氧气氛中对SRO膜进行后退火。 DC溅射或PECVD工艺可用于沉积SRO膜。在一个方面，该方法还包括：HF缓冲氧化物蚀刻（BOE）SRO膜; 并且再次氧化SRO膜，以在SRO膜中的Si纳米晶体周围形成SiO 2层。在一个方面，SRO膜通过在氧气气氛中退火再次氧化。以这种方式，在具有1至5纳米（nm）范围内的厚度的Si纳米晶体周围形成SiO 2层。

2. 发明申请

US20060211267A1 Silicon oxide thin-films with embedded nanocrystalline silicon 有权
公开(公告)号：US20060211267A1
公开(公告)日：2006-09-21
申请号：US11418273
申请日：2006-05-04
申请人： Pooran Joshi , Tingkai Li , Yoshi Ono , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Tingkai Li , Yoshi Ono , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/31
CPC分类号： H01L21/31608 , C23C16/30 , C23C16/401 , C23C16/402 , C23C16/505 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/02337 , H01L21/0234
摘要： A method is provided for forming a silicon oxide (SiOx) thin-film with embedded nanocrystalline silicon (Si). The method deposits SiOx, where x is in the range of 1 to 2, overlying a substrate, using a high-density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, the SiOx thin-film is embedded with nanocrystalline Si. The HD PECVD process may use an inductively coupled plasma (ICP) source, a substrate temperature of less than about 400° C., and an oxygen source gas with a silicon precursor. In one aspect, a hydrogen source gas and an inert gas are used, where the ratio of oxygen source gas to inert gas is in the range of about 0.02 to 5. The SiOx thin-film with embedded nanocrystalline Si typically has a refractive index in the range of about 1.6 to 2.2, with an extinction coefficient in the range of 0 to 0.5.

3. 发明申请

US20050136695A1 Thin film oxide interface 失效
标题翻译：薄膜氧化物界面
公开(公告)号：US20050136695A1
公开(公告)日：2005-06-23
申请号：US11046571
申请日：2005-01-28
申请人： Pooran Joshi , John Hartzell , Masahiro Adachi , Yoshi Ono
发明人： Pooran Joshi , John Hartzell , Masahiro Adachi , Yoshi Ono
IPC分类号： H01L21/316 , H01L21/336 , H01L29/49 , H01L29/786 , H01L23/58 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/66772
摘要： An oxide interface and a method for fabricating an oxide interface are provided. The method comprises forming a silicon layer and an oxide layer overlying the silicon layer. The oxide layer is formed at a temperature of less than 400° C. using an inductively coupled plasma source. In some aspects of the method, the oxide layer is more than 20 nanometers (nm) thick and has a refractive index between 1.45 and 1.47. In some aspects of the method, the oxide layer is formed by plasma oxidizing the silicon layer, producing plasma oxide at a rate of up to approximately 4.4 nm per minute (after one minute). In some aspects of the method, a high-density plasma enhanced chemical vapor deposition (HD-PECVD) process is used to form the oxide layer. In some aspects of the method, the silicon and oxide layers are incorporated into a thin film transistor.
摘要翻译：提供氧化物界面和制造氧化物界面的方法。该方法包括形成硅层和覆盖硅层的氧化物层。使用电感耦合等离子体源在低于400℃的温度下形成氧化物层。在该方法的一些方面，氧化物层的厚度大于20纳米（nm），折射率在1.45和1.47之间。在该方法的一些方面，通过等离子体氧化硅层形成氧化物层，以每分钟高达约4.4nm的速率产生等离子体氧化物（1分钟后）。在该方法的某些方面，使用高密度等离子体增强化学气相沉积（HD-PECVD）工艺来形成氧化物层。在该方法的一些方面，将硅和氧化物层结合到薄膜晶体管中。

4. 发明申请

US20050205969A1 Charge trap non-volatile memory structure for 2 bits per transistor 审中-公开
标题翻译：电荷陷阱非易失性存储器结构，每个晶体管2位
公开(公告)号：US20050205969A1
公开(公告)日：2005-09-22
申请号：US10805158
申请日：2004-03-19
申请人： Yoshi Ono , John Conley , Pooran Joshi
发明人： Yoshi Ono , John Conley , Pooran Joshi
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/336 , H01L23/58 , H01L27/115 , H01L29/51 , H01L29/786 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66833 , G11C16/0475 , H01L29/40117 , H01L29/517 , H01L29/792 , H01L29/7923
摘要： The present invention discloses a non-volatile memory cell structure utilizing a charge trapping high-k dielectric in the place of the triple film stack (tunnel dielectric layer/charge trapping layer/blocking layer). The charge trapping characteristic of the high-k dielectric can be further improved by exposing the high-k dielectric layer to an treatment process such as a plasma exposure using excited state oxygen (e.g. oxygen plasma) ambient. By using a single layer as the charge trapping gate dielectric, the present invention presents a simple and inexpensive solution that permits device scaling to very small dimensions, together with the ease of device fabrication processes. The present invention also discloses the fabrication process for the charge trapping high-k gate dielectric non-volatile memory cell structure, applicable to bulk device, TFT device or SOI device.
摘要翻译：本发明公开了一种利用电荷捕获高k电介质代替三层膜堆叠（隧道介电层/电荷俘获层/阻挡层）的非易失性存储单元结构。通过将高k介电层暴露于诸如使用激发态氧（例如氧等离子体）环境的等离子体暴露的处理过程，可以进一步提高高k电介质的电荷捕获特性。通过使用单层作为电荷捕获栅极电介质，本发明提供了一种简单且便宜的解决方案，其允许将器件缩放到非常小的尺寸，以及器件制造工艺的容易性。本发明还公开了适用于体器件，TFT器件或SOI器件的电荷俘获高k栅介质非易失性存储单元结构的制造工艺。

5. 发明申请

US20060110939A1 Enhanced thin-film oxidation process 有权
标题翻译：增强薄膜氧化工艺
公开(公告)号：US20060110939A1
公开(公告)日：2006-05-25
申请号：US11327612
申请日：2006-01-06
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/31
CPC分类号： H01L21/31608 , H01L21/02164 , H01L21/02323 , H01L21/0234 , H01L21/02359 , H01L21/3105 , H01L21/31662
摘要： A method is provided for additionally oxidizing a thin-film oxide. The method includes: providing a substrate; depositing an MyOx (M oxide) layer overlying the substrate, where M is a solid element having an oxidation state in a range of +2 to +5; treating the MyOx layer to a high density plasma (HDP) source; and, forming an MyOk layer in response to the HDP source, where k>x. In one aspect, the method further includes decreasing the concentration of oxide charge in response to forming the MyOk layer. In another aspect, the MyOx layer is deposited with an impurity N, and the method further includes creating volatile N oxides in response to forming the MyOk layer. For example, the impurity N may be carbon and the method creates a volatile carbon oxide.
摘要翻译：提供了另外氧化薄膜氧化物的方法。该方法包括：提供衬底; 沉积覆盖衬底的MyOx（M氧化物）层，其中M是具有+2至+5范围内的氧化态的固体元素; 将MyOx层处理成高密度等离子体（HDP）源; 并且响应于HDP源形成MyOk层，其中k> x。在一个方面，该方法还包括响应于形成MyOk层而降低氧化物电荷的浓度。在另一方面，MyOx层沉积有杂质N，并且该方法还包括响应于形成MyOk层而产生挥发性N氧化物。例如，杂质N可以是碳，并且该方法产生挥发性碳氧化物。

6. 发明申请

US20100151152A1 Non-Stoichiometric SiOxNy Optical Filter Fabrication 审中-公开
标题翻译：非化学计量的SiOxNy光学滤波器制造
公开(公告)号：US20100151152A1
公开(公告)日：2010-06-17
申请号：US12700395
申请日：2010-02-04
申请人： Pooran Joshi , Apostolos T. Voutsas , John W. Hartzell
发明人： Pooran Joshi , Apostolos T. Voutsas , John W. Hartzell
IPC分类号： C23C16/34 , C23C16/42 , B05D5/06
CPC分类号： G02B5/286 , Y10T428/259
摘要： A non-stoichiometric SiOXNY thin-film optical filter is provided. The filter is formed from a substrate and a first non-stoichiometric SiOX1NY1 thin-film overlying the substrate, where (X1+Y1 0). The first non-stoichiometric SiOX1NY1 thin-film has a refractive index (n1) in the range of about 1.46 to 3, and complex refractive index (N1=n1+ik1), where k1 is an extinction coefficient in a range of about 0 to 0.5. The first non-stoichiometric SiOX1NY1 thin-film may be either intrinsic or doped. In one aspect, the first non-stoichiometric SiOX1NY1 thin-film has nanoparticles with a size in the range of about 1 to 10 nm. A second non-stoichiometric SiOX2NY2 thin-film may overlie the first non-stoichiometric SiOX1NY1 thin-film, where Y1≠Y2. The second non-stoichiometric SiOX1NY1 thin-film may be intrinsic and doped. In another variation, a stoichiometric SiOX2NY2 thin-film, intrinsic or doped, overlies the first non-stoichiometric SiOX1NY1 thin-film.
摘要翻译：提供非化学计量的SiOXNY薄膜滤光片。滤光片由衬底和覆盖衬底的第一非化学计量的SiOX1NY1薄膜形成，其中（X1 + Y1 <2和Y1> 0）。第一非化学计量的SiOX1NY1薄膜的折射率（n1）在约1.46至3的范围内，复数折射率（N1 = n1 + ik1），其中k1是约0至 0.5。第一非化学计量的SiOX1NY1薄膜可以是固有的或掺杂的。在一个方面，第一非化学计量的SiOX1NY1薄膜具有尺寸在约1至10nm范围内的纳米颗粒。第二非化学计量的SiOX2NY2薄膜可以覆盖第一非化学计量的SiOX1NY1薄膜，其中Y1≠Y2。第二非化学计量的SiOX1NY1薄膜可以是固有的和掺杂的。在另一个实施方案中，本征或掺杂的化学计量的SiOX2NY2薄膜覆盖在第一非化学计量的SiOX1NY1薄膜上。

7. 发明申请

US20050202662A1 Method for fabricating oxide thin films 失效
标题翻译：氧化物薄膜的制造方法
公开(公告)号：US20050202662A1
公开(公告)日：2005-09-15
申请号：US10801374
申请日：2004-03-15
申请人： Pooran Joshi , Apostolos Voutsas
发明人： Pooran Joshi , Apostolos Voutsas
IPC分类号： H01L21/316 , H01L21/31 , H01L21/3205 , H01L21/336 , H01L21/469 , H01L21/4763 , H01L29/786
CPC分类号： H01L21/02164 , C23C16/402 , H01J37/321 , H01J37/32165 , H01J37/32706 , H01L21/02238 , H01L21/02252 , H01L21/02274 , H01L21/32105 , H01L29/4908
摘要： A method for fabricating a thin film oxide is provided. The method includes: forming a substrate; treating the substrate at temperatures equal to and less than 360° C. using a high density (HD) plasma source; and forming an M oxide layer overlying the substrate where M is an element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5. In some aspects, the method uses an inductively coupled plasma (ICP) source. In some aspects the ICP source is used to plasma oxidize the substrate. In other aspects, HD plasma enhanced chemical vapor deposition is used to deposit the M oxide layer on the substrate. In some aspects of the method, M is silicon and a silicon layer and an oxide layer are incorporated into a TFT.
摘要翻译：提供了制造薄膜氧化物的方法。该方法包括：形成衬底; 使用高密度（HD）等离子体源在等于或小于360℃的温度下处理衬底; 以及在衬底上形成M氧化物层，其中M是选自化学上定义为固体并具有+2至+5范围内的氧化态的元素的基团的元素。在一些方面，该方法使用电感耦合等离子体（ICP）源。在某些方面，ICP源用于等离子体氧化底物。在其他方面，使用HD等离子体增强化学气相沉积在基底上沉积M氧化物层。在该方法的一些方面，M是硅，并且硅层和氧化物层被结合到TFT中。

8. 发明申请

US20070155137A1 High density plasma non-stoichiometric SiOxNy films 有权
标题翻译：高密度等离子体非化学计量的SiOxNy薄膜
公开(公告)号：US20070155137A1
公开(公告)日：2007-07-05
申请号：US11698623
申请日：2007-01-26
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/20
CPC分类号： G02B1/10 , C23C16/308 , C23C16/509 , G02B1/11
摘要： A high-density plasma method is provided for forming a SiOXNY thin-film. The method provides a substrate and introduces a silicon (Si) precursor. A thin-film is deposited overlying the substrate, using a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. As a result, a SiOXNY thin-film is formed, where (X+Y 0). The SiOXNY thin-film can be stoichiometric or non-stoichiometric. The SiOXNY thin-film can be graded, meaning the values of X and Y vary with the thickness of the SiOXNY thin-film. Further, the process enables the in-situ deposition of a SiOXNY thin-film multilayer structure, where the different layers may be stoichiometric, non-stoichiometric, graded, and combinations of the above-mentioned types of SiOXNY thin-films.
摘要翻译：提供了高密度等离子体法，用于形成SiO x N N Y Y薄膜。该方法提供衬底并引入硅（Si）前体。使用高密度（HD）等离子体增强化学气相沉积（PECVD）工艺将薄膜沉积在衬底上。结果，形成SiO（X + Y <2和Y> 0）的SiO N 薄膜。 SiO 2薄膜可以是化学计量的或非化学计量的。 SiO 2薄膜可以分级，这意味着X和Y的值随着SiO 2 X N的厚度而变化， SUB> Y 薄膜。此外，该方法能够实现SiO 2薄膜多层结构的原位沉积，其中不同的层可以是化学计量的，非化学计量的，分级的，以及上述类型的SiO x N N Y Y薄膜的组合。

9. 发明申请

US20070013035A1 Oxide interface with improved oxygen bonding 有权
标题翻译：具有改善氧键的氧化物界面
公开(公告)号：US20070013035A1
公开(公告)日：2007-01-18
申请号：US11524783
申请日：2006-09-21
申请人： Pooran Joshi
发明人： Pooran Joshi
IPC分类号： H01L23/58
CPC分类号： H01L29/78603 , H01L29/4908 , H01L29/66757 , H01L29/78609
摘要： A deposition oxide interface with improved oxygen bonding and a method for bonding oxygen in an oxide layer are provided. The method includes depositing an M oxide layer where M is a first element selected from a group including elements chemically defined as a solid and having an oxidation state in a range of +2 to +5, plasma oxidizing the M oxide layer at a temperature of less than 400° C. using a high density plasma source, and in response to plasma oxidizing the M oxide layer, improving M-oxygen bonding in the M oxide layer. The plasma oxidation process diffuses excited oxygen radicals into the oxide layer. The plasma oxidation is performed at specified parameters including temperature, power density, pressure, process gas composition, and process gas flow. In some aspects of the method, M is silicon, and the oxide interface is incorporated into a thin film transistor.
摘要翻译：提供了具有改善的氧键的沉积氧化物界面和氧化层中的氧键合方法。该方法包括沉积M氧化物层，其中M是选自化学上定义为固体且具有+2至+5范围内的氧化态的元素的第一元素，在氧化层中氧化氧化层的温度为小于400℃，使用高密度等离子体源，并且响应于等离子体氧化M氧化物层，改善M氧化物层中的M-氧键。等离子体氧化过程将激发的氧自由基扩散到氧化物层中。等离子体氧化在包括温度，功率密度，压力，工艺气体成分和工艺气体流量在内的特定参数下进行。在该方法的一些方面，M是硅，并且氧化物界面被结合到薄膜晶体管中。

10. 发明申请

US20060079100A1 High density plasma grown silicon nitride 审中-公开
标题翻译：高密度等离子体生长氮化硅
公开(公告)号：US20060079100A1
公开(公告)日：2006-04-13
申请号：US11218111
申请日：2005-09-01
申请人： Pooran Joshi , Apostolos Voutsas , John Hartzell
发明人： Pooran Joshi , Apostolos Voutsas , John Hartzell
IPC分类号： H01L21/469
CPC分类号： H01L21/0217 , C23C16/24 , C23C16/45523 , C23C16/509 , H01L21/02247 , H01L21/02252 , H01L21/02329 , H01L21/0234 , H01L21/049 , H01L29/66666 , H01L29/6675
摘要： A method is provided for forming a silicon nitride (SiNx) film. The method comprises: providing a Si substrate or Si film layer; optionally maintaining a substrate temperature of about 400 degrees C., or less; performing a high-density (HD) nitrogen plasma process where a top electrode is connected to an inductively coupled HD plasma source; and, forming a grown layer of SiNx overlying the substrate. More specifically, the HD nitrogen plasma process includes using an inductively coupled plasma (ICP) source to supply power to a top electrode, independent of the power and frequency of the power that is supplied to the bottom electrode, in an atmosphere with a nitrogen source gas. The SiNx layer can be grown at an initial growth rate of at least about 20 Å in about the first minute.
摘要翻译：提供了形成氮化硅（SiNx）膜的方法。该方法包括：提供Si衬底或Si膜层; 可选地保持约400℃或更低的衬底温度; 执行高电压（HD）氮等离子体处理，其中顶电极连接到感应耦合的HD等离子体源; 并且在衬底上形成SiN x的生长层。更具体地说，HD氮等离子体处理包括使用电感耦合等离子体（ICP）源，在氮源的气氛中，独立于供给底部电极的功率的功率和频率，向顶部电极供电加油站。 SiNx层可以在大约第一分钟内以至少约的初始生长速率生长。

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