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1. 发明申请

US20070023654A1 Charged particle beam application system 有权
标题翻译：带电粒子束应用系统
公开(公告)号：US20070023654A1
公开(公告)日：2007-02-01
申请号：US11475934
申请日：2006-06-28
申请人： Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
发明人： Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
IPC分类号： G21G5/00
CPC分类号： H01J37/265 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3177 , H01J2237/24507 , H01J2237/24528 , H01J2237/28
摘要： An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.
摘要翻译：本发明的目的是即使在多束电子束光刻系统中也测量着色角，其中每个光束的电流量都很小。其另一个目的是测量着陆角的绝对值和具有高SN比的相对着陆角。在包括两个隔膜板（第一和第二隔膜）和检测器的传输检测器中，由第一和第二隔膜之间的距离和第二隔膜的孔径确定的检测角度等于或小于基于第一膜片的细孔的中心与检测电流量最大的第二膜片的孔的中心之间的关系来确定待测量的电子束和着陆角。

2. 发明授权

US07385194B2 Charged particle beam application system 有权
标题翻译：带电粒子束应用系统
公开(公告)号：US07385194B2
公开(公告)日：2008-06-10
申请号：US11475934
申请日：2006-06-28
申请人： Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
发明人： Osamu Kamimura , Tadashi Kanosue , Yasunari Sohda , Susumu Goto
IPC分类号： H01J37/28 , G01N13/10
CPC分类号： H01J37/265 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3177 , H01J2237/24507 , H01J2237/24528 , H01J2237/28
摘要： An object of the present invention is to measure a landing angle even in a multi electron beam lithography system in which current amount of each beam is small. Another object thereof is to measure an absolute value of the landing angle and a relative landing angle with the high SN ratio. In a transmission detector including two diaphragm plates (first and second diaphragms) and a detector, a detection angle determined by a distance between the first and second diaphragms and an aperture diameter of the second diaphragm is made equal to or smaller than the divergence angle of the electron beam to be measured, and the landing angle is determined based on the relation between a center of the fine hole of the first diaphragm and the center of the aperture of the second diaphragm at which the amount of detected current is maximum.
摘要翻译：本发明的目的是即使在多束电子束光刻系统中也测量着色角，其中每个光束的电流量都很小。其另一个目的是测量着陆角的绝对值和具有高SN比的相对着陆角。在包括两个隔膜板（第一和第二隔膜）和检测器的传输检测器中，由第一和第二隔膜之间的距离和第二隔膜的孔径确定的检测角度等于或小于基于第一膜片的细孔的中心与检测电流量最大的第二膜片的孔的中心之间的关系来确定待测量的电子束和着陆角。

3. 发明授权

US07041988B2 Electron beam exposure apparatus and electron beam processing apparatus 失效
标题翻译：电子束曝光装置和电子束处理装置
公开(公告)号：US07041988B2
公开(公告)日：2006-05-09
申请号：US10431782
申请日：2003-05-08
申请人： Shinichi Hamaguchi , Susumu Goto , Osamu Kamimura , Yasunari Sohda
发明人： Shinichi Hamaguchi , Susumu Goto , Osamu Kamimura , Yasunari Sohda
IPC分类号： G21G5/00 , G21K5/10
CPC分类号： B82Y10/00 , B82Y40/00 , G21K1/093 , H01J37/153 , H01J37/3177 , H01J2237/1536
摘要： An electron beam exposure apparatus for exposing wafer with an electron beam, includes: a first electromagnetic lens system for making the electron beam incident substantially perpendicularly on a first plane be incident on a second plane substantially perpendicularly; a second electromagnetic lens system for making the electron beam that was substantially perpendicularly incident on the second plane be incident on the wafer substantially perpendicularly; a rotation correction lens provided within the first electromagnetic lens system for correcting rotation of the electron beam caused by at least the first electromagnetic lens system; a deflection system for deflecting the electron beam to a position on the wafer; and a deflection-correction optical system provided within the second electromagnetic lens system for correcting deflection aberration caused by the deflection system.
摘要翻译：一种用电子束曝光晶片的电子束曝光装置，包括：用于使基本上垂直于第一平面的电子束入射到第二平面上的第一电磁透镜系统基本垂直入射; 用于使基本上垂直入射在第二平面上的电子束的第二电磁透镜系统基本上垂直入射在晶片上; 旋转校正透镜，设置在第一电磁透镜系统内，用于校正由至少第一电磁透镜系统引起的电子束的旋转; 用于将电子束偏转到晶片上的位置的偏转系统; 以及设置在第二电磁透镜系统内用于校正由偏转系统引起的偏转像差的偏转校正光学系统。

4. 发明申请

US20050072941A1 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US20050072941A1
公开(公告)日：2005-04-07
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： G21K5/04 , G03F7/20 , H01J37/04 , H01J37/09 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

5. 发明授权

US06838682B2 Electron beam exposure equipment and electron beam exposure method 失效
标题翻译：电子束曝光设备和电子束曝光方法
公开(公告)号：US06838682B2
公开(公告)日：2005-01-04
申请号：US10634878
申请日：2003-08-06
申请人： Yasunari Sohda , Osamu Kamimura , Hiroya Ohta , Susumu Gotoh
发明人： Yasunari Sohda , Osamu Kamimura , Hiroya Ohta , Susumu Gotoh
IPC分类号： G03F7/20 , G03F9/02 , H01J37/04 , H01J37/141 , H01J37/304 , H01J37/305 , H01J37/317 , H01L21/027
CPC分类号： H01J37/1471 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J37/3045 , H01J37/3174 , H01J37/3177 , H01J2237/1501
摘要： There is provided an electron beam exposure technique which permits optical adjustment in an electron optics system using a doublet lens necessary for large field projection.Electron beam exposure equipment having a part forming one image by at least two electromagnetic lenses, has means measuring the position of an electron beam near an image plane with changing excitation of at least two lenses at the same time; and control means feeding back the measured result to aligners or the intensity of the lenses.
摘要翻译：提供了一种使用电子光学系统进行光学调节的电子束曝光技术，该系统使用大场投影所需的双重透镜。具有通过至少两个电磁透镜形成一个图像的部分的电子束曝光设备具有测量位置同时改变至少两个透镜的激发的图像平面附近的电子束; 并且控制装置将测量结果反馈到对准器或透镜的强度。

6. 发明申请

US20080067376A1 CHARGED PARTICLE BEAM APPARATUS 审中-公开
标题翻译：充电颗粒光束装置
公开(公告)号：US20080067376A1
公开(公告)日：2008-03-20
申请号：US11751094
申请日：2007-05-21
申请人： Sayaka Tanimoto , Osamu Kamimura , Yasunari Sohda , Hiroya Ohta
发明人： Sayaka Tanimoto , Osamu Kamimura , Yasunari Sohda , Hiroya Ohta
IPC分类号： G21K7/00
CPC分类号： H01J37/153 , H01J37/265 , H01J37/28 , H01J2237/1205 , H01J2237/1534 , H01J2237/1536 , H01J2237/2446 , H01J2237/2448 , H01J2237/24592 , H02N13/00
摘要： This invention provides a charged particle beam apparatus that can makes reduction in off axis aberration and separate detection of secondary beams to be compatible. The charged particle beam apparatus has: an electron optics that forms a plurality of primary charged particle beams, projects them on a specimen, and makes them scan the specimen with a first deflector; a plurality of detectors that individually detect a plurality of secondary charged particle beams produced from the plurality of locations of the specimen by irradiation of the plurality of primary charged particle beams; and a voltage source for applying a voltage to the specimen. The charged particle beam apparatus further has: a Wien filter for separating paths of the primary charged particle beams and paths of the secondary charged particle beams; a second deflector for deflecting the secondary charged particle beams separated by the Wien filter; and control means for controlling the first deflector and the second deflector in synchronization, wherein the plurality of detectors detect the plurality of secondary charged particle beams separated by the Wien filter individually.
摘要翻译：本发明提供了一种带电粒子束装置，其可以减少离轴像差和将次级束的分离检测兼容。带电粒子束装置具有：形成多个初级带电粒子束的电子光学器件，将它们投射在样本上，并使它们用第一偏转器扫描样本; 多个检测器，通过多个初级带电粒子束的照射，分别检测从样本的多个位置产生的多个次级带电粒子束; 以及用于向样本施加电压的电压源。带电粒子束装置还具有：维纳滤波器，用于分离初级带电粒子束的路径和二次带电粒子束的路径; 用于偏转由维恩滤波器分离的二次带电粒子束的第二偏转器; 以及用于同步地控制第一偏转器和第二偏转器的控制装置，其中多个检测器分别检测由维恩过滤器分离的多个次级带电粒子束。

7. 发明授权

US07105842B2 Method of charged particle beam lithography and equipment for charged particle beam lithography 有权
标题翻译：带电粒子束光刻方法及带电粒子束光刻设备
公开(公告)号：US07105842B2
公开(公告)日：2006-09-12
申请号：US10958141
申请日：2004-10-05
申请人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
发明人： Sayaka Tanimoto , Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Haruo Yoda , Masaki Hosoda
IPC分类号： H01J37/302 , G03F7/20
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/04 , H01J37/317
摘要： Disclosed is equipment for charged-particle beam lithography capable of executing exposure even when an electron beam with a bad property is produced due to a failure in some multibeam forming element, without replacing the failing multibeam forming element and without reducing the exposure accuracy. The equipment includes means for forming a plurality of charged-particle beams arranged at predetermined intervals; a plurality of blankers which act on the plurality of charged-particle beams individually; a common blanker which acts on all of the plurality of charged-particle beams; and a blanking restriction for causing those charged-particle beams which are given predetermined deflection by the plurality of blankers to reach onto a sample, with a signal applied to the common blanker, and blocking those charged-particle beams which are not given the predetermined deflection by the plurality of blankers to the sample. The equipment blocks beams with bad properties to the sample and executes exposure using only those beams which have bad properties.
摘要翻译：本发明公开了即使由于某些多波束形成元件的故障而产生具有不良特性的电子束也能够进行曝光的带电粒子束光刻设备，而不更换故障多波束形成元件而不降低曝光精度。该设备包括用于形成以预定间隔布置的多个带电粒子束的装置; 分别作用在多个带电粒子束上的多个阻挡器; 作用于所有多个带电粒子束的常见消隐器; 以及消隐限制，用于使得由多个消隐器给予预定偏转的那些带电粒子束到达样本，信号施加到公共消隐器，并且阻挡未被给予预定偏转的那些带电粒子束通过多个消隐器到样品。设备阻挡样品性能不良的光束，并仅使用具有不良特性的光束执行曝光。

8. 发明授权

US07098464B2 Electron beam writing equipment and electron beam writing method 有权
标题翻译：电子束写入设备和电子束写入方法
公开(公告)号：US07098464B2
公开(公告)日：2006-08-29
申请号：US10957695
申请日：2004-10-05
申请人： Yasunari Sohda , Osamu Kamimura , Yoshinori Nakayama , Sayaka Tanimoto , Masato Muraki
发明人： Yasunari Sohda , Osamu Kamimura , Yoshinori Nakayama , Sayaka Tanimoto , Masato Muraki
IPC分类号： H01J37/304
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2482
摘要： The present invention provides a writing technique which can perform high-accuracy overlay writing in electron beam writing equipment performing mark detection by light.Electron beam writing equipment has an electron source; an electron optical system illuminating an electron beam emitted from the electron source onto a sample for scanning to form a desired pattern on the sample; a stage mounting the sample; a mark substrate provided on the stage; means beaming a light beam for position detection which is on the same side as the illumination direction of the electron beam for illuminating the mark substrate; light detection means which is on the same side as the means beaming a light beam for detecting reflected light reflected on the mark substrate; and electron detection means which is on the side opposite the light detection means with respect to the mark substrate for detecting a transmitted electron obtained by illumination of the electron beam onto the mark substrate, wherein relative position information of the light beam and the electron beam is obtained based on the signals of the detected reflected light and transmitted electron.
摘要翻译：本发明提供了一种写入技术，其能够通过光执行标记检测的电子束写入设备中执行高精度重叠写入。电子束写入设备具有电子源; 电子光学系统将从电子源发射的电子束照射到样品上以进行扫描以在样品上形成所需图案; 安装样品的阶段; 设置在台上的标记基板; 意味着将用于位置检测的光束照射在与用于照射标记基板的电子束的照射方向相同的一侧; 光检测装置与发出用于检测在标记基板上反射的反射光的光束相同的一侧; 以及电子检测装置，其相对于用于检测通过将电子束照射到标记基板上而获得的透射电子的标记基板在与光检测装置相反的一侧，其中光束和电子束的相对位置信息为基于检测到的反射光和透射电子的信号获得。

9. 发明授权

US07049607B2 Electron beam writing equipment and electron beam writing method 有权
标题翻译：电子束写入设备和电子束写入方法
公开(公告)号：US07049607B2
公开(公告)日：2006-05-23
申请号：US10951769
申请日：2004-09-29
申请人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
发明人： Yasunari Sohda , Hiroya Ohta , Osamu Kamimura , Susumu Gotoh
IPC分类号： G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J37/3177 , H01J2237/3045
摘要： Electron beam writing equipment has an electron source and an electron optics system for scanning an electron beam emitted from the electron source on a sample via deflection means having at least two different deflection speeds. An objective lens is used to form a desired pattern on the sample The electron beam is moved by high speed scanning with the deflection means to repeat formation of a patterned beam. The electron beam is moved on the mark for beam correction by low speed scanning with the deflection means in synchronization with one cycle of the repetition. The position or the deflection distance of the electron beam or blanking time is corrected using detectors for back scattered or secondary electrons.
摘要翻译：电子束写入设备具有电子源和电子光学系统，用于通过具有至少两个不同偏转速度的偏转装置扫描从电子源在样品上发射的电子束。使用物镜在样品上形成期望的图案电子束通过用偏转装置的高速扫描移动，以重复形成图案化的束。电子束通过与偏转装置的低速扫描同步于重复的一个周期而在标记上移动以进行光束校正。使用用于背散射或二次电子的检测器校正电子束的位置或偏转距离或消隐时间。

10. 发明授权

US07015482B2 Electron beam writing equipment using plural beams and method 有权
标题翻译：使用多束光束的电子束写入设备及方法
公开(公告)号：US07015482B2
公开(公告)日：2006-03-21
申请号：US10354959
申请日：2003-01-31
申请人： Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Masato Muraki , Masaki Takakuwa
发明人： Yasunari Sohda , Yoshinori Nakayama , Osamu Kamimura , Masato Muraki , Masaki Takakuwa
IPC分类号： G21K7/00 , G21K5/10
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/304 , H01J2237/043 , H01J2237/24405
摘要： An electron beam writing system, using discrete electron beams in which the interval of the beams is larger than the size of the beams, generates plural electron beams, on/off controls each of the electron beams according to pattern data to be written, and deflects the electron beams together, thereby performing writing on a wafer. One side of a unit writing area of the electon beams is larger than substantially twice the interval of the electron beams or substantially an integral multiple thereof.
摘要翻译：一种电子束写入系统，使用离散电子束，其中光束的间隔大于光束的大小，产生多个电子束，根据要写入的图形数据，对每个电子束进行开/关控制，并偏转电子束在一起，从而在晶片上进行写入。电子束的单位写入区域的一侧大于电子束的间隔的两倍或其基本上的整数倍。

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