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1. 发明授权

US5027167A Semiconductor intergrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US5027167A
公开(公告)日：1991-06-25
申请号：US175705
申请日：1988-03-31
申请人： Osamu Kagaya , Yasunari Umemoto , Junji Shigeta
发明人： Osamu Kagaya , Yasunari Umemoto , Junji Shigeta
IPC分类号： H01L21/761 , H01L21/338 , H01L21/76 , H01L21/765 , H01L27/10 , H01L29/812
CPC分类号： H01L21/765 , H01L21/7605
摘要： The semiconductor integrated circuit of the present invention includes an electrode to which potential is supplied to apply an electric field to an isolation layer between similar semiconductor layers having ohmic electrodes and implanted into a compound semiconductor substrate. By this construction this invention reduces the development of temporary conduction in the isolation layer due to disturbance of potential barrier by .alpha. particles, and can improve pronouncedly the tolerance to .alpha. particle induced soft errors.
摘要翻译：本发明的半导体集成电路包括提供电位的电极，用于向具有欧姆电极的类似半导体层之间的隔离层施加电场并注入到化合物半导体衬底中。通过这种结构，本发明减少了由于α粒子对势垒的干扰而导致的隔离层临时传导的发展，并且可以显着改善对α粒子诱导的软错误的耐受性。

2. 发明授权

US4954866A Semiconductor integrated circuit memory 失效
标题翻译：半导体集成电路存储器
公开(公告)号：US4954866A
公开(公告)日：1990-09-04
申请号：US247250
申请日：1988-09-21
申请人： Hirotoshi Tanaka , Hiroki Yamashita , Noboru Masuda , Junji Shigeta , Yasunari Umemoto , Osamu Kagaya
发明人： Hirotoshi Tanaka , Hiroki Yamashita , Noboru Masuda , Junji Shigeta , Yasunari Umemoto , Osamu Kagaya
IPC分类号： H01L27/06 , H01L27/105 , H01L27/11
CPC分类号： H01L27/1104 , H01L27/0605 , H01L27/1116 , H01L27/105
摘要： A semiconductor integrated circuit memory is disclosed in which a first impurity-doped layer for making circuit elements such as MESFET's and a second impurity-doped layer opposite in conductivity type to the first impurity-doped layer are formed in a semi-insulating substrate in such a manner that the second impurity-doped layer is formed under and between circuit elements for making up a memory cell array part and a peripheral circuit part, and is divided into at least first and second regions. For example, the first region formed under and between the circuit elements of the memory cell array part is made of a P-type layer which is high in carrier density, and the second region formed under and between the circuit elements of the peripheral circuit part is made of a P-type layer which is low in carrier density. The high carrier-density P-type layer formed under the memory cell array part allows a memory cell having a minimum critical charge for alpha-particles to gain satisfactory alpha-particle immunity even when the memory cell is made fine in size. Further, the low carrier-density P-type layer formed under the peripheral circuit part having a critical charge larger than that of the memory cell can improve the alpha-particle immunity of the peripheral circuit part and can suppress an increase in parasitic capacitance at the peripheral circuit part to maintain the high-speed operation of the memory.
摘要翻译：公开了一种半导体集成电路存储器，其中在半绝缘衬底中形成用于制造电路元件的第一杂质掺杂层，例如MESFET和与第一杂质掺杂层的导电类型相反的第二杂质掺杂层第二杂质掺杂层形成在用于构成存储单元阵列部分的电路元件和外围电路部分之间的方式，并且被划分为至少第一和第二区域。例如，形成在存储单元阵列部分的电路元件之下和之间的第一区域由载流子密度高的P型层制成，并且第二区域形成在外围电路部分的电路元件之下由载流子浓度低的P型层构成。形成在存储单元阵列部分下方的高载流子密度P型层允许具有最小临界电荷的存储单元获得满意的α粒子免疫，即使当存储单元的尺寸精细时。此外，形成在具有大于存储单元的临界电荷的外围电路部分下的低载流子密度P型层可以改善外围电路部分的α粒子免疫力，并且可以抑制在外部电路部分的寄生电容的增加外围电路部分保持高速运行的内存。

3. 发明授权

US06636118B1 High-frequency power amplification module and radio communication device 失效
标题翻译：高频功率放大模块和无线通信设备
公开(公告)号：US06636118B1
公开(公告)日：2003-10-21
申请号：US09914678
申请日：2001-11-14
申请人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
发明人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
IPC分类号： H03F304
CPC分类号： H01L27/0255 , H03F1/52 , H03F3/195 , H03F2200/444 , H03F2203/21178
摘要： In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.
摘要翻译：在其中级联多个异质结双极型晶体管（npn型HBT）的多级结构的高频功率放大器模块中，将多个pn结二极管串联连接的保护电路连接在每个HBT的集电极和发射极。 p侧连接到集电极侧，并且n侧连接到发射极侧。其中pn结二极管的数量等于或小于pn结二极管串联的保护电路连接在基极和发射极之间。 p侧连接到基极侧，并且n侧连接到发射极侧。通过该结构，由于天线侧的负载的波动，在集电极和发射极两端施加过电压的情况下，集电端子被保护电路的导通状态电压钳位，HBT可以防止被摧毁。由于类似的保护电路组装在基极和发射极之间，即使在制造高频功率放大器模块时操作者接触模块时，也可以防止HBT被保护电路的钳位效应所破坏基极和发射极以及集电极和发射极之间的保护电路。因此，可以实现高频功率放大器模块和无线通信装置的制造成品率的提高，并且可以防止由无线通信装置的负载阻抗的波动引起的破坏。

4. 发明授权

US5523593A Compound semiconductor integrated circuit and optical regenerative repeater using the same 失效
标题翻译：复合半导体集成电路和使用其的光学再生中继器
公开(公告)号：US5523593A
公开(公告)日：1996-06-04
申请号：US36787
申请日：1993-03-25
申请人： Osamu Kagaya , Hiroyuki Takazawa , Yoshinori Imamura , Junji Shigeta , Yukihiro Kawata , Hiroto Oda
发明人： Osamu Kagaya , Hiroyuki Takazawa , Yoshinori Imamura , Junji Shigeta , Yukihiro Kawata , Hiroto Oda
IPC分类号： H01L27/06 , H01L29/08 , H01L29/778 , H01L31/0352
CPC分类号： H01L27/0605 , H01L29/0891
摘要： By forming an isolated semiconductor layer or electrode layer on a semiconductor surface between neighboring field effect transistors and element separating trenches which are deep enough to reach at least the semi-insulating substrate or the hetero junction interface on the buffer layer, low frequency oscillation of a compound semiconductor integrated circuit can be reduced. By controlling the thickness of the buffer layer having a hetero junction to at most 150 nm, the low frequency oscillation can be reduced. By forming materials separating adjacent elements with a width of at most 2 .mu.m which reach from the element region surface to the buffer layer having hetero junction so as to enclose the element regions and etched regions in the neighborhood of the elements or so as to enclose the element regions in the etched regions and by controlling the angle of the sides of the etched regions against the semiconductor layer surface to 10.degree. to 60.degree., wires can be prevented from short-circuiting.
摘要翻译：通过在相邻的场效应晶体管和元件分离沟槽之间的半导体表面上形成隔离的半导体层或电极层，该沟槽深度足以到达缓冲层上的至少半绝缘衬底或异质结界面，可以减少复合半导体集成电路。通过将具有异质结的缓冲层的厚度控制为至多150nm，可以降低低频振荡。通过形成将从元件区域表面到达具有异质结的缓冲层到达的至多2μm的宽度的相邻元件分开形成材料，以便在元件附近包围元件区域和蚀刻区域，以便包围蚀刻区域中的元件区域和通过将蚀刻区域的侧面相对于半导体层表面的角度控制在10°至60°，可以防止导线短路。

5. 发明授权

US08633399B2 Differential transmission circuit, optical module, and information processing system 有权
标题翻译：差分传输电路，光模块和信息处理系统
公开(公告)号：US08633399B2
公开(公告)日：2014-01-21
申请号：US13403048
申请日：2012-02-23
申请人： Osamu Kagaya
发明人： Osamu Kagaya
IPC分类号： H05K1/11
CPC分类号： H01P3/08 , H01P1/02 , H01P3/085 , H01P3/088 , H05K1/111
摘要： A differential transmission circuit includes a pair of transmission line conductors and a ground conductor layer, wherein the pair of transmission line conductors include a first straight line region where both the pair of transmission line conductors extend in parallel to each other in a first direction with a first width in a first layer, a first cross region where one of the pair of transmission line conductors is formed in the first layer, the other thereof is formed in a second layer, and the pair of transmission line conductors cross the each other in a three-dimensional manner, the first cross region being disposed on the front side of the first straight line region, and wherein each of the widths of the pair of transmission line conductors in the first cross region is smaller than the first width.
摘要翻译：差分传输电路包括一对传输线导体和接地导体层，其中所述一对传输线导体包括第一直线区域，其中所述一对传输线导体在第一方向上彼此平行延伸，在第一层中的第一宽度，在第一层中形成一对传输线导体中的一个的第一交叉区域，另一个形成在第二层中，并且一对传输线导体以第一交叉区域设置在第一直线区域的前侧，并且其中，第一交叉区域中的一对传输线导体的宽度小于第一宽度。

6. 发明授权

US07894726B2 Optical receiver module 有权
标题翻译：光接收模块
公开(公告)号：US07894726B2
公开(公告)日：2011-02-22
申请号：US11451366
申请日：2006-06-13
申请人： Osamu Kagaya , Yukitoshi Okamura , Atsushi Miura , Michihide Sasada , Hideyuki Kuwano
发明人： Osamu Kagaya , Yukitoshi Okamura , Atsushi Miura , Michihide Sasada , Hideyuki Kuwano
IPC分类号： H04B10/06
CPC分类号： H01L25/167 , H01L2224/48137 , H01L2924/30107 , H01L2924/3011 , H04B10/66 , H01L2924/00
摘要： A semiconductor chip on which a light receiving element is mounted, a preamplifier for amplifying an output signal from the light receiving element, and an insulating carrier substrate on which the light receiving element is mounted are connected such that the output signal from the light receiving element is input to the preamplifier through electrodes on the carrier substrate, and there are provided two electrodes, on the carrier substrate, having a capacitance value of 40 fF or more therebetween in a state where no light receiving element is mounted.
摘要翻译：安装有光接收元件的半导体芯片，用于放大来自光接收元件的输出信号的前置放大器和安装有光接收元件的绝缘载体基板被连接，使得来自光接收元件的输出信号通过载体基板上的电极输入到前置放大器，并且在不装载光接收元件的状态下，在载体基板上设置两个电极间的电容值为40fF以上的两个电极。

7. 发明授权

US07593650B2 Optical receiver 有权
标题翻译：光接收机
公开(公告)号：US07593650B2
公开(公告)日：2009-09-22
申请号：US11454874
申请日：2006-06-19
申请人： Osamu Kagaya , Michihide Sasada
发明人： Osamu Kagaya , Michihide Sasada
IPC分类号： H04B10/06
CPC分类号： H04B10/66 , H03F3/087 , H05K1/023 , H05K1/0231 , H05K1/0237 , H05K1/147 , H05K2201/09236 , H05K2201/10022 , H05K2201/10121
摘要： There is provided an optical receiver in which, between an optical receiver sub-assembly and a pre-amplifier on a main printed circuit board, two transmission lines on a flexible printed circuit board for connecting an optical receiver module with the main printed circuit board, a balanced-type attenuator circuit composed of four resistor elements, and two capacitor elements connected in parallel with the balanced-type attenuator circuit are provided.
摘要翻译：提供了一种光接收器，其中在主印刷电路板上的光接收器子组件和前置放大器之间，用于将光接收器模块与主印刷电路板连接的柔性印刷电路板上的两条传输线，提供由四个电阻元件组成的平衡型衰减器电路和与平衡型衰减器电路并联连接的两个电容器元件。

8. 发明申请

US20080048777A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080048777A1
公开(公告)日：2008-02-28
申请号：US11905421
申请日：2007-10-01
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H03F3/20
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

9. 发明申请

US20080011938A1 PHOTODETECTOR MODULE 有权
标题翻译：光电模块
公开(公告)号：US20080011938A1
公开(公告)日：2008-01-17
申请号：US11672629
申请日：2007-02-08
申请人： Michihide SASADA , Osamu Kagaya , Yukitoshi Okamura
发明人： Michihide SASADA , Osamu Kagaya , Yukitoshi Okamura
IPC分类号： H01J40/14
CPC分类号： H01L25/167 , H01L2224/48137 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H05K1/0243 , H05K1/189 , H05K3/306 , H05K2201/0191 , H05K2201/0792 , H05K2201/10121 , H05K2201/10424 , H05K2201/2036 , H01L2924/00
摘要： A photodetector module that can achieve impedance matching and power saving. A photodetector (11) and an amplifier (12) for amplifying an electric signal from the photodetector (11) are mounted on a stem (14). A dielectric plate (18) is arranged between the stem (14) and a flexible substrate (20). To transfer an electric signal from the amplifier (12) to the substrate (20), a lead pin (15d) is provided to pass through the stem (14) and the dielectric plate (18). The output of the amplifier (12) includes a capacitance component, and the output impedance of the amplifier (12) is higher than the impedance that matches with the substrate (20). Further, the thickness d of the dielectric plate (18) is such that the inductance component of the lead pin (15d) includes an inductance component that is inductive, which cancels the capacitance component of the amplifier, and impedance matching with the substrate (20) can be achieved.
摘要翻译：可以实现阻抗匹配和省电的光电检测器模块。用于放大来自光电检测器（11）的电信号的光电检测器（11）和放大器（12）安装在杆（14）上。电介质板（18）设置在杆（14）和柔性衬底（20）之间。为了将电信号从放大器（12）传送到衬底（20），提供引脚（15d）以穿过杆（14）和电介质板（18）。放大器（12）的输出包括电容分量，放大器（12）的输出阻抗高于与衬底（20）匹配的阻抗。此外，电介质板（18）的厚度d使得引脚（15d）的电感分量包括感应的电感分量，其抵消放大器的电容分量和与衬底的阻抗匹配（ 20）。

10. 发明申请

US20070177884A1 Optical receiver 有权
标题翻译：光接收机
公开(公告)号：US20070177884A1
公开(公告)日：2007-08-02
申请号：US11454874
申请日：2006-06-19
申请人： Osamu Kagaya , Michihide Sasada
发明人： Osamu Kagaya , Michihide Sasada
IPC分类号： H04B10/06
CPC分类号： H04B10/66 , H03F3/087 , H05K1/023 , H05K1/0231 , H05K1/0237 , H05K1/147 , H05K2201/09236 , H05K2201/10022 , H05K2201/10121
摘要： There is provided an optical receiver in which, between an optical receiver sub-assembly and a pre-amplifier on a main printed circuit board, two transmission lines on a flexible printed circuit board for connecting an optical receiver module with the main printed circuit board, a balanced-type attenuator circuit composed of four resistor elements, and two capacitor elements connected in parallel with the balanced-type attenuator circuit are provided.
摘要翻译：提供了一种光接收器，其中在主印刷电路板上的光接收器子组件和前置放大器之间，用于将光接收器模块与主印刷电路板连接的柔性印刷电路板上的两条传输线，提供由四个电阻元件组成的平衡型衰减器电路和与平衡型衰减器电路并联连接的两个电容器元件。

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