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1. 发明授权

US06636118B1 High-frequency power amplification module and radio communication device 失效
标题翻译：高频功率放大模块和无线通信设备
公开(公告)号：US06636118B1
公开(公告)日：2003-10-21
申请号：US09914678
申请日：2001-11-14
申请人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
发明人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
IPC分类号： H03F304
CPC分类号： H01L27/0255 , H03F1/52 , H03F3/195 , H03F2200/444 , H03F2203/21178
摘要： In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.
摘要翻译：在其中级联多个异质结双极型晶体管（npn型HBT）的多级结构的高频功率放大器模块中，将多个pn结二极管串联连接的保护电路连接在每个HBT的集电极和发射极。 p侧连接到集电极侧，并且n侧连接到发射极侧。其中pn结二极管的数量等于或小于pn结二极管串联的保护电路连接在基极和发射极之间。 p侧连接到基极侧，并且n侧连接到发射极侧。通过该结构，由于天线侧的负载的波动，在集电极和发射极两端施加过电压的情况下，集电端子被保护电路的导通状态电压钳位，HBT可以防止被摧毁。由于类似的保护电路组装在基极和发射极之间，即使在制造高频功率放大器模块时操作者接触模块时，也可以防止HBT被保护电路的钳位效应所破坏基极和发射极以及集电极和发射极之间的保护电路。因此，可以实现高频功率放大器模块和无线通信装置的制造成品率的提高，并且可以防止由无线通信装置的负载阻抗的波动引起的破坏。

2. 发明授权

US07817437B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07817437B2
公开(公告)日：2010-10-19
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

3. 发明申请

US20100231304A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100231304A1
公开(公告)日：2010-09-16
申请号：US12787154
申请日：2010-05-25
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H03F3/04
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

4. 发明授权

US07525813B2 Semiconductor device 有权
公开(公告)号：US07525813B2
公开(公告)日：2009-04-28
申请号：US11905421
申请日：2007-10-01
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

5. 发明授权

US06489680B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06489680B2
公开(公告)日：2002-12-03
申请号：US09970668
申请日：2001-10-05
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L2348
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

6. 发明授权

US06330165B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06330165B1
公开(公告)日：2001-12-11
申请号：US09345505
申请日：1999-07-01
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K702
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

7. 发明申请

US20090161329A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20090161329A1
公开(公告)日：2009-06-25
申请号：US12394421
申请日：2009-02-27
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/66
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

8. 发明申请

US20070001300A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20070001300A1
公开(公告)日：2007-01-04
申请号：US11451579
申请日：2006-06-13
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/34
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

9. 发明申请

US20080048777A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20080048777A1
公开(公告)日：2008-02-28
申请号：US11905421
申请日：2007-10-01
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H03F3/20
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

10. 发明授权

US07068521B2 Semiconductor device 有权
公开(公告)号：US07068521B2
公开(公告)日：2006-06-27
申请号：US11194701
申请日：2005-08-02
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/58
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

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