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1. 发明授权

US4954866A Semiconductor integrated circuit memory 失效
标题翻译：半导体集成电路存储器
公开(公告)号：US4954866A
公开(公告)日：1990-09-04
申请号：US247250
申请日：1988-09-21
申请人： Hirotoshi Tanaka , Hiroki Yamashita , Noboru Masuda , Junji Shigeta , Yasunari Umemoto , Osamu Kagaya
发明人： Hirotoshi Tanaka , Hiroki Yamashita , Noboru Masuda , Junji Shigeta , Yasunari Umemoto , Osamu Kagaya
IPC分类号： H01L27/06 , H01L27/105 , H01L27/11
CPC分类号： H01L27/1104 , H01L27/0605 , H01L27/1116 , H01L27/105
摘要： A semiconductor integrated circuit memory is disclosed in which a first impurity-doped layer for making circuit elements such as MESFET's and a second impurity-doped layer opposite in conductivity type to the first impurity-doped layer are formed in a semi-insulating substrate in such a manner that the second impurity-doped layer is formed under and between circuit elements for making up a memory cell array part and a peripheral circuit part, and is divided into at least first and second regions. For example, the first region formed under and between the circuit elements of the memory cell array part is made of a P-type layer which is high in carrier density, and the second region formed under and between the circuit elements of the peripheral circuit part is made of a P-type layer which is low in carrier density. The high carrier-density P-type layer formed under the memory cell array part allows a memory cell having a minimum critical charge for alpha-particles to gain satisfactory alpha-particle immunity even when the memory cell is made fine in size. Further, the low carrier-density P-type layer formed under the peripheral circuit part having a critical charge larger than that of the memory cell can improve the alpha-particle immunity of the peripheral circuit part and can suppress an increase in parasitic capacitance at the peripheral circuit part to maintain the high-speed operation of the memory.
摘要翻译：公开了一种半导体集成电路存储器，其中在半绝缘衬底中形成用于制造电路元件的第一杂质掺杂层，例如MESFET和与第一杂质掺杂层的导电类型相反的第二杂质掺杂层第二杂质掺杂层形成在用于构成存储单元阵列部分的电路元件和外围电路部分之间的方式，并且被划分为至少第一和第二区域。例如，形成在存储单元阵列部分的电路元件之下和之间的第一区域由载流子密度高的P型层制成，并且第二区域形成在外围电路部分的电路元件之下由载流子浓度低的P型层构成。形成在存储单元阵列部分下方的高载流子密度P型层允许具有最小临界电荷的存储单元获得满意的α粒子免疫，即使当存储单元的尺寸精细时。此外，形成在具有大于存储单元的临界电荷的外围电路部分下的低载流子密度P型层可以改善外围电路部分的α粒子免疫力，并且可以抑制在外部电路部分的寄生电容的增加外围电路部分保持高速运行的内存。

2. 发明授权

US5027167A Semiconductor intergrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US5027167A
公开(公告)日：1991-06-25
申请号：US175705
申请日：1988-03-31
申请人： Osamu Kagaya , Yasunari Umemoto , Junji Shigeta
发明人： Osamu Kagaya , Yasunari Umemoto , Junji Shigeta
IPC分类号： H01L21/761 , H01L21/338 , H01L21/76 , H01L21/765 , H01L27/10 , H01L29/812
CPC分类号： H01L21/765 , H01L21/7605
摘要： The semiconductor integrated circuit of the present invention includes an electrode to which potential is supplied to apply an electric field to an isolation layer between similar semiconductor layers having ohmic electrodes and implanted into a compound semiconductor substrate. By this construction this invention reduces the development of temporary conduction in the isolation layer due to disturbance of potential barrier by .alpha. particles, and can improve pronouncedly the tolerance to .alpha. particle induced soft errors.
摘要翻译：本发明的半导体集成电路包括提供电位的电极，用于向具有欧姆电极的类似半导体层之间的隔离层施加电场并注入到化合物半导体衬底中。通过这种结构，本发明减少了由于α粒子对势垒的干扰而导致的隔离层临时传导的发展，并且可以显着改善对α粒子诱导的软错误的耐受性。

3. 发明授权

US5124770A Field effect transistor with alpha particle protection 失效
标题翻译：具有α粒子保护的场效应晶体管
公开(公告)号：US5124770A
公开(公告)日：1992-06-23
申请号：US512501
申请日：1990-04-20
申请人： Yasunari Umemoto , Kiichi Ueyanagi , Junji Shigeta , Norikazu Hashimoto
发明人： Yasunari Umemoto , Kiichi Ueyanagi , Junji Shigeta , Norikazu Hashimoto
IPC分类号： H01L29/812 , H01L21/338 , H01L29/10
CPC分类号： H01L29/1075 , Y10S257/903
摘要： An FET structure with improved .alpha.-particle immunity or soft error immunity particularly provided in a semi-insulating substrate. This structure includes some layer which can prevent both electrons and holes generated in a substrate by the incidence of .alpha.-particles from being injected into the FET.
摘要翻译：特别是在半绝缘衬底中提供了具有改进的α-粒子抗扰度或软错误抗扰性的FET结构。该结构包括一些层，其可以通过注入到FET中的α粒子的入射来防止在衬底中产生的电子和空穴。

4. 发明授权

US5523593A Compound semiconductor integrated circuit and optical regenerative repeater using the same 失效
标题翻译：复合半导体集成电路和使用其的光学再生中继器
公开(公告)号：US5523593A
公开(公告)日：1996-06-04
申请号：US36787
申请日：1993-03-25
申请人： Osamu Kagaya , Hiroyuki Takazawa , Yoshinori Imamura , Junji Shigeta , Yukihiro Kawata , Hiroto Oda
发明人： Osamu Kagaya , Hiroyuki Takazawa , Yoshinori Imamura , Junji Shigeta , Yukihiro Kawata , Hiroto Oda
IPC分类号： H01L27/06 , H01L29/08 , H01L29/778 , H01L31/0352
CPC分类号： H01L27/0605 , H01L29/0891
摘要： By forming an isolated semiconductor layer or electrode layer on a semiconductor surface between neighboring field effect transistors and element separating trenches which are deep enough to reach at least the semi-insulating substrate or the hetero junction interface on the buffer layer, low frequency oscillation of a compound semiconductor integrated circuit can be reduced. By controlling the thickness of the buffer layer having a hetero junction to at most 150 nm, the low frequency oscillation can be reduced. By forming materials separating adjacent elements with a width of at most 2 .mu.m which reach from the element region surface to the buffer layer having hetero junction so as to enclose the element regions and etched regions in the neighborhood of the elements or so as to enclose the element regions in the etched regions and by controlling the angle of the sides of the etched regions against the semiconductor layer surface to 10.degree. to 60.degree., wires can be prevented from short-circuiting.
摘要翻译：通过在相邻的场效应晶体管和元件分离沟槽之间的半导体表面上形成隔离的半导体层或电极层，该沟槽深度足以到达缓冲层上的至少半绝缘衬底或异质结界面，可以减少复合半导体集成电路。通过将具有异质结的缓冲层的厚度控制为至多150nm，可以降低低频振荡。通过形成将从元件区域表面到达具有异质结的缓冲层到达的至多2μm的宽度的相邻元件分开形成材料，以便在元件附近包围元件区域和蚀刻区域，以便包围蚀刻区域中的元件区域和通过将蚀刻区域的侧面相对于半导体层表面的角度控制在10°至60°，可以防止导线短路。

5. 发明授权

US07400834B2 Optical space transmission apparatus and optical space communication system 失效
标题翻译：光空间传输装置和光空间通信系统
公开(公告)号：US07400834B2
公开(公告)日：2008-07-15
申请号：US11002016
申请日：2004-12-02
申请人： Junji Shigeta
发明人： Junji Shigeta
IPC分类号： H04B10/00
CPC分类号： H04B10/118
摘要： An optical space transmission apparatus which performs a first communication, in which a light beam propagating through a space is used, with a remote apparatus includes a communication section and an identification section. Here, the communication section performs a second communication, which is different from the first communication, with a plurality of remote apparatuses and the identification section identifies the remote apparatus, which performs the first communication, from among the plurality of remote apparatuses by performing the second communication.
摘要翻译：执行通过空间传播的光束的远程设备的第一通信的光学空间传输设备包括通信部分和识别部分。这里，通信部通过执行第二通信部，从多个远程装置执行与多个远程装置不同的第二通信，并且识别部从多个远程装置中识别执行第一通信的远程装置通讯。

6. 发明授权

US06678432B2 Optical integrated device, semiconductor laser module and optical transmitter 失效
标题翻译：光学集成器件，半导体激光器模块和光发射机
公开(公告)号：US06678432B2
公开(公告)日：2004-01-13
申请号：US09785451
申请日：2001-02-20
申请人： Junji Shigeta , Kimio Tatsuno , Masataka Shirai
发明人： Junji Shigeta , Kimio Tatsuno , Masataka Shirai
IPC分类号： G02B613
CPC分类号： H01S5/02216 , H01S5/02415 , H01S5/026 , H01S5/0264 , H01S5/0683 , H01S5/4031
摘要： To resolve a problem in which in an optical output and wavelength monitor integrated type semiconductor laser module monolithically integrated in parallel with a plurality of semiconductor lasers, since light emitting positions of the respective semiconductor lasers differ, an allowable range of an optical incident position of the monitor is exceeded, the optical incident position of the monitor is confined in the allowable range by integrating backward optical waveguides for guiding backward beam of the respective semiconductor lasers to a narrow range at a backward end of a semiconductor chip along with the semiconductor lasers, whereby there can be easily realized a semiconductor laser module with a built-in optical monitor even in the case of the chip integrated with the plurality of semiconductor lasers and can be realized an inexpensive optical module having high function.
摘要翻译：为了解决在与多个半导体激光器并联地单片集成的光输出和波长监视器集成型半导体激光器模块中的问题，由于各个半导体激光器的发光位置不同，所以光入射位置的允许范围监视器被超过，通过将反射光波导集成在半导体激光器的半导体芯片的后端，将各个半导体激光器的反向光束集成到窄范围内，将监视器的光学入射位置限制在允许范围内，由此即使在与多个半导体激光器集成的芯片的情况下，也可以容易地实现具有内置光学监视器的半导体激光器模块，并且可以实现具有高功能的便宜的光学模块。

7. 发明授权

US4177298A Method for producing an InSb thin film element 失效
标题翻译：用于制造InSb薄膜元件的方法
公开(公告)号：US4177298A
公开(公告)日：1979-12-04
申请号：US888465
申请日：1978-03-20
申请人： Junji Shigeta , Tetsu Oi , Nobuo Kotera , Muneyasu Nakashima , Nobuo Miyamoto
发明人： Junji Shigeta , Tetsu Oi , Nobuo Kotera , Muneyasu Nakashima , Nobuo Miyamoto
IPC分类号： C30B13/10 , H01L21/225 , H01L43/10 , H01L43/12 , H01L21/22 , H01L21/203 , H01L21/205
CPC分类号： H01L43/10 , C30B13/10 , H01L21/2258 , H01L43/14 , Y10S438/918 , Y10S438/971
摘要： A method for producing an InSb thin film element comprising the steps of forming an InSb polycrystalline thin film on a substrate, melting and recrystallizing the InSb polycrystalline thin film at a temperature above the melting point of InSb, and disposing a diffusion source which contains at least one element selected from the group consisting of Cu, Au, Ag, Zn, Na, K, Cd, B, Li, Ca, Fe, Mg, Ba, Al and Pb and then heating the InSb thin film so as to dope it with the desired element or elements in a range in which the total quantity does not exceed a concentration of 1.times.10.sup.18 cm.sup.-3. The InSb thin film element produced by this method has a very little current noise and a high signal-to-noise ratio. Further more, simultaneous doping of the said predetermined element or said elements and sb is more effective to reduce the current noise.
摘要翻译：一种InSb薄膜元件的制造方法，其特征在于，在基板上形成InSb多晶薄膜，在InSb熔点以上的温度下熔融并重结晶InSb多晶薄膜，并设置至少含有选自Cu，Au，Ag，Zn，Na，K，Cd，B，Li，Ca，Fe，Mg，Ba，Al和Pb中的一种元素，然后加热InSb薄膜以将其掺杂在总量不超过1×10 18 cm -3的浓度的范围内的期望元素。通过该方法制造的InSb薄膜元件具有非常小的电流噪声和高的信噪比。此外，同时掺杂所述预定元件或所述元件和sb更有效地降低电流噪声。

8. 发明申请

US20050129406A1 Optical space transmission apparatus and optical space communication system 失效
标题翻译：光空间传输装置和光空间通信系统
公开(公告)号：US20050129406A1
公开(公告)日：2005-06-16
申请号：US11002016
申请日：2004-12-02
申请人： Junji Shigeta
发明人： Junji Shigeta
IPC分类号： H04B10/11 , H04B10/112 , H04B10/00
CPC分类号： H04B10/118
摘要： An optical space transmission apparatus which performs a first communication, in which a light beam propagating through a space is used, with a remote apparatus includes a communication section and an identification section. Here, the communication section performs a second communication, which is different from the first communication, with a plurality of remote apparatuses and the identification section identifies the remote apparatus, which performs the first communication, from among the plurality of remote apparatuses by performing the second communication.
摘要翻译：执行通过空间传播的光束的远程设备的第一通信的光学空间传输设备包括通信部分和识别部分。这里，通信部通过执行第二通信部，从多个远程装置执行与多个远程装置不同的第二通信，并且识别部从多个远程装置中识别执行第一通信的远程装置通讯。

9. 发明授权

US06616352B1 Optical transmission apparatus and bidirectional optical space transmission system using the same 失效
标题翻译：光传输装置和双向光空间传输系统采用相同的方式
公开(公告)号：US06616352B1
公开(公告)日：2003-09-09
申请号：US09586883
申请日：2000-06-05
申请人： Junji Shigeta , Toshihiko Myojo , Yasuhiro Takahashi , Kazuo Moritomo
发明人： Junji Shigeta , Toshihiko Myojo , Yasuhiro Takahashi , Kazuo Moritomo
IPC分类号： H04B1000
CPC分类号： H04B10/1125
摘要： A bidirectional optical space transmission system is made up of a pair of optical transmission apparatus. Each optical transmission apparatus comprises a signal generating circuit for generating a pilot signal, a multiplexing section for multiplexing the pilot signal and a main signal to be transmitted, an electrooptic converter section for emitting an optical signal on the basis of the signal produced by the multiplexing process, a light receiving element for receiving an optical signal transmitted from the partner optical transmission apparatus and detecting a pilot signal contained therein, and a demodulation circuit for demodulating the pilot signal detected by the light receiving element. Pilot signals multiplexed with main signals to be transmitted through the bidirectional optical transmission system are subjected to spreading modulation and demodulated for spreading by the demodulation circuit.
摘要翻译：双向光学空间传输系统由一对光传输装置组成。每个光传输装置包括用于产生导频信号的信号发生电路，用于复用导频信号的复用部分和要传输的主信号，基于由多路复用产生的信号发射光信号的电光转换器部分处理光接收元件，用于接收从伙伴光传输装置发送的光信号并检测其中包含的导频信号;以及解调电路，用于解调由光接收元件检测的导频信号。对通过双向光传输系统发送的主信号进行多路复用的导频信号经过扩展调制，并由解调电路进行解调以进行扩频。

10. 发明授权

US07619911B2 Semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件
公开(公告)号：US07619911B2
公开(公告)日：2009-11-17
申请号：US10579911
申请日：2003-11-21
申请人： Satoru Hanzawa , Junji Shigeta , Shinichiro Kimura , Takeshi Sakata , Riichiro Takemura , Kazuhiko Kajigaya
发明人： Satoru Hanzawa , Junji Shigeta , Shinichiro Kimura , Takeshi Sakata , Riichiro Takemura , Kazuhiko Kajigaya
IPC分类号： G11C15/00
CPC分类号： G11C15/04 , G11C15/043
摘要： In a memory array structured of memory cells using a storage circuit STC and a comparator CP, either one electrode of a source electrode or a drain electrode of a transistor, whose gate electrode is connected to a search line, of a plurality of transistors structuring the comparator CP is connected to a match line HMLr precharged to a high voltage. Further, a match detector MDr is arranged on a match line LMLr precharged to a low voltage to discriminate a comparison signal voltage generated at the match line according to the comparison result of data. According to such memory array structure and operation, comparison operation can be performed at low power and at high speed while influence of search-line noise is avoided in a match line pair. Therefore, a low power content addressable memory which allows search operation at high speed can be realized.
摘要翻译：在使用存储电路STC和比较器CP的存储器单元构成的存储器阵列中，将栅电极连接到搜索线的晶体管的源电极或漏电极的一个电极，构成比较器CP连接到预充电到高电压的匹配线HMLr。此外，匹配检测器MDr布置在预充电到低电压的匹配线LMLr上，以根据数据的比较结果来识别在匹配线处产生的比较信号电压。根据这种存储器阵列结构和操作，可以在低功率和高速度下执行比较操作，同时在匹配线对中避免搜索线噪声的影响。因此，可以实现允许高速搜索操作的低功率内容可寻址存储器。

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