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1. 发明授权

US06825727B1 Radio frequency power transistor avalanche breakdown detection circuit and method therefor 有权
标题翻译：射频功率晶体管雪崩击穿检测电路及其方法
公开(公告)号：US06825727B1
公开(公告)日：2004-11-30
申请号：US10608602
申请日：2003-06-27
申请人： Darrell Hill
发明人： Darrell Hill
IPC分类号： H03F304
CPC分类号： H03F1/52 , H03F3/211 , H03F2200/366
摘要： An apparatus for detecting the onset of avalanche breakdown in a radio frequency bipolar power transistor is provided. The radio frequency bipolar power transistor includes a first transistor cell and a second transistor cells. The first and second transistor cells are functioning cells of the radio frequency bipolar transistor. The first transistor has a base ballast resistor. The second transistor cell has an emitter ballast resistor. The operation of the first and second transistor cells are monitored and compared against one another. A first difference voltage is generated from the first and second transistor cells under normal operating conditions. A second difference voltage is generated from the first and second transistor cells at the onset of avalanche breakdown.
摘要翻译：提供一种用于检测射频双极功率晶体管中的雪崩击穿开始的装置。射频双极型功率晶体管包括第一晶体管单元和第二晶体管单元。第一和第二晶体管单元是射频双极晶体管的功能单元。第一晶体管具有基极镇流电阻。第二晶体管单元具有发射极镇流电阻。对第一和第二晶体管单元的操作进行监测并相互比较。在正常工作条件下，从第一和第二晶体管单元产生第一差分电压。在雪崩击穿开始时，从第一和第二晶体管单元产生第二差分电压。

2. 发明授权

US06812793B2 Power supply rejection circuit for an audio amplifier 有权
标题翻译：音频放大器的电源抑制电路
公开(公告)号：US06812793B2
公开(公告)日：2004-11-02
申请号：US10313347
申请日：2002-12-06
申请人： Kendall V. Castor-Perry , Fred J. Shipley
发明人： Kendall V. Castor-Perry , Fred J. Shipley
IPC分类号： H03F304
CPC分类号： H03F1/301 , H03F1/308 , H03F3/68
摘要： A circuit for power amplification for an audio amplifier that reduces power supply noise amplified to the load. The circuit takes the prior art circuit's existing output coupling cap and power supply decoupling cap and connecting them in series from the power supply to ground. The output of the amplifier is then directly coupled to the load and the other side of the load is connected at the “null point” between the two capacitors.
摘要翻译：用于音频放大器功率放大的电路，可减少放大到负载的电源噪声。该电路采用现有技术的电路现有的输出耦合盖和电源去耦帽，并将它们从电源串联连接到地。然后放大器的输出直接耦合到负载，负载的另一侧连接在两个电容之间的“零点”处。

3. 发明授权

US06806776B2 Transconductor tuning circuit 有权
标题翻译：跨导调谐电路
公开(公告)号：US06806776B2
公开(公告)日：2004-10-19
申请号：US10373837
申请日：2003-02-27
申请人： Jeong-won Lee , Gea-ok Cho , Jung-eun Lee
发明人： Jeong-won Lee , Gea-ok Cho , Jung-eun Lee
IPC分类号： H03F304
CPC分类号： H03F3/343 , H03F3/191 , H03F3/45179 , H03F2203/45394 , H03F2203/45622 , H03F2203/45682
摘要： A transconductor tuning circuit for controlling transconductance of a transconductor. The tuning circuit includes a first MOS (Metal-Oxide Semiconductor) transistor. A source terminal of the first MOS transistor is connected to a power source. A gate terminal and a drain terminal of the first MOS transistor being connected to each other. A gate terminal and a drain terminal of a second MOS transistor being connected. A first input terminal of a first error amplifier is connected to the gate terminal of the first MOS transistor. A second input terminal of the first error amplifier is connected to the gate terminal of the second MOS transistor. The first error amplifier outputs an output signal in form of a bias signal for controlling tuning of the transconductor.
摘要翻译：用于控制跨导体的跨导的跨导体调谐电路。调谐电路包括第一MOS（金属氧化物半导体）晶体管。第一MOS晶体管的源极端子连接到电源。第一MOS晶体管的栅极端子和漏极端子彼此连接。连接第二MOS晶体管的栅极端子和漏极端子。第一误差放大器的第一输入端子连接到第一MOS晶体管的栅极端子。第一误差放大器的第二输入端子连接到第二MOS晶体管的栅极端子。第一误差放大器以偏置信号的形式输出输出信号，以控制跨导体的调谐。

4. 发明授权

US06803824B2 Dynamic matching in cascode circuits 失效
标题翻译：级联电路中的动态匹配
公开(公告)号：US06803824B2
公开(公告)日：2004-10-12
申请号：US10024943
申请日：2001-12-18
申请人： Hamid Reza Rategh , Payman Hosseinzadeh Shanjani , Ngar Loong Alan Chan , Mehdi Frederik Soltan
发明人： Hamid Reza Rategh , Payman Hosseinzadeh Shanjani , Ngar Loong Alan Chan , Mehdi Frederik Soltan
IPC分类号： H03F304
CPC分类号： H03F1/56 , H03F1/223 , H03G1/0029
摘要： A method and apparatus for a variable gain cascode amplifier (or attenuator) is disclosed. Embodiments provide for a compensated input impedance. A gain/impedance controller compensates input impedance corresponding to gain adjustments.
摘要翻译：公开了一种用于可变增益共源共栅放大器（或衰减器）的方法和装置。实施例提供补偿输入阻抗。增益/阻抗控制器补偿与增益调整相对应的输入阻抗。

5. 发明授权

US06768382B1 Circuit and technique for accurate and efficient power amplifier sensing 有权
标题翻译：电路和技术用于精确高效的功率放大器感测
公开(公告)号：US06768382B1
公开(公告)日：2004-07-27
申请号：US10401920
申请日：2003-03-28
申请人： Terry Shie , Russ Wyse , David Ripley , Paul Andrys
发明人： Terry Shie , Russ Wyse , David Ripley , Paul Andrys
IPC分类号： H03F304
CPC分类号： H03F1/301 , G01R21/00 , H03F2200/471
摘要： In one exemplary embodiment, a sensing circuit for sensing an output power of a power amplifier comprises a biasing circuit coupled to a detection circuit. The biasing circuit feeds a base current to the power amplifier, and the detection circuit draws a mirror current of the base current. The mirror current is fed at a first node to each of an impedance circuit and a first FET, wherein a sense voltage is generated at the first node. In one exemplary embodiment, the first FET is activated when a beta parameter of the power amplifier decreases.
摘要翻译：在一个示例性实施例中，用于感测功率放大器的输出功率的感测电路包括耦合到检测电路的偏置电路。偏置电路将基极电流馈送到功率放大器，并且检测电路绘制基极电流的镜电流。反射镜电流在第一节点馈送到阻抗电路和第一FET中的每一个，其中在第一节点处产生感测电压。在一个示例性实施例中，当功率放大器的β参数减小时，第一FET被激活。

6. 发明授权

US06741135B2 Radio frequency power amplifier module 失效
公开(公告)号：US06741135B2
公开(公告)日：2004-05-25
申请号：US10315144
申请日：2002-12-10
申请人： Akira Kuriyama , Masami Ohnishi
发明人： Akira Kuriyama , Masami Ohnishi
IPC分类号： H03F304
CPC分类号： H01L23/552 , H01L23/66 , H01L24/48 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/48227 , H01L2224/85399 , H01L2924/00014 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H03F1/083 , H03F1/12 , H03F1/22 , H03F1/302 , H03F1/32 , H03F1/52 , H03F3/191 , H03F3/1935 , H03F3/195 , H03F3/602 , H03F2200/114 , H03F2200/18 , H03F2200/222 , H03F2200/318 , H03F2200/366 , H03F2200/387 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： An object of the present invention is to provide a radio frequency power amplifier of multi stage amplifying method that is designed to reduce instability of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby operate stably. Another object of the present invention is to provide a radio frequency power amplifier that is designed to reduce distortion of output power caused by electromagnetic coupling of bias supply terminals and interconnections of each stage to thereby provide high efficiency. The above objects can be achieved by providing a first interconnection connected to a terminal for supplying a voltage for collector driving to a power amplifying transistor, a second interconnection connected to a terminal for supplying a voltage for collector driving to a second transistor controlling a base bias voltage of the above transistor, and one or more ground parts for electromagnetic shield, wherein the first interconnection and the second interconnection are separated by one or more of the ground parts for electromagnetic shield.

7. 发明授权

US06724263B2 High-frequency power amplifier 失效
标题翻译：高频功率放大器
公开(公告)号：US06724263B2
公开(公告)日：2004-04-20
申请号：US10281206
申请日：2002-10-28
申请人： Masayuki Sugiura
发明人： Masayuki Sugiura
IPC分类号： H03F304
CPC分类号： H03F1/565 , H03F3/191
摘要： A high-frequency power amplifier includes a transistor which is inputted with a high-frequency signal, amplifies the high-frequency signal and outputs the same; a fundamental-signal matching circuit, one end of which is connected to an output of said transistor and which matches at least the impedance of fundamental signal in the amplified high-frequency signal and outputs the same from the other end; a power supply which supplies electric power to said transistor from a node located in an interval from the output of said transistor to said fundamental-signal matching circuit; a first inductor, one end of which is connected to said power supply; a second inductor connected in series between the other end of said first inductor and said node; and a first capacitor, one end of which is connected between said first inductor and said second inductor while the other end thereof is connected to a reference potential, said first capacitor forming a first series-resonant circuit with said second inductor and a parallel-resonant circuit with said first inductor.
摘要翻译：高频功率放大器包括输入高频信号的晶体管，放大高频信号并输出高频信号; 基本信号匹配电路，其一端连接到所述晶体管的输出，并且至少匹配放大的高频信号中的基波信号的阻抗并从另一端输出; 从位于从所述晶体管的输出到所述基本信号匹配电路的间隔的节点向所述晶体管供给电力的电源; 第一电感器，其一端连接到所述电源; 第二电感器，串联连接在所述第一电感器的另一端和所述节点之间; 以及第一电容器，其一端连接在所述第一电感器和所述第二电感器之间，而另一端连接到参考电位，所述第一电容器与所述第二电感器形成第一串联谐振电路，并且并联谐振电路与所述第一电感器。

8. 发明授权

US06717473B1 Method of forming an audio amplifier voltage reference and structure therefor 有权
标题翻译：形成音频放大器电压基准的方法及其结构
公开(公告)号：US06717473B1
公开(公告)日：2004-04-06
申请号：US10270413
申请日：2002-10-15
申请人： Patrick Bernard , Anthony Quelen , Christian Perrin
发明人： Patrick Bernard , Anthony Quelen , Christian Perrin
IPC分类号： H03F304
CPC分类号： H03F3/181 , H03F1/30
摘要： An audio amplifier system (10) is formed to include a voltage reference (16). The voltage reference (16) is formed to utilize a filter having a first cut-off frequency when the output (14) of the voltage reference (16) is less than a first value and to use a second cut-off frequency when the output (14) is greater than the first value.
摘要翻译：音频放大器系统（10）形成为包括电压基准（16）。当电压基准（16）的输出（14）小于第一值时，电压基准（16）被形成为利用具有第一截止频率的滤波器，并且当输出时使用第二截止频率（14）大于第一值。

9. 发明授权

US06714081B1 Active current bias network for compensating hot-carrier injection induced bias drift 有权
标题翻译：用于补偿热载流子注入的有源电流偏压网络引起的偏置漂移
公开(公告)号：US06714081B1
公开(公告)日：2004-03-30
申请号：US10241081
申请日：2002-09-11
申请人： Jie Xu
发明人： Jie Xu
IPC分类号： H03F304
CPC分类号： H03F1/301 , H03F2200/453
摘要： An active current bias network that compensates for Hot-Carrier Injection (HCI) induced bias drift, a common phenomenon existing in Metal-Oxide Semiconductor (MOS) transistors and especially in Laterally Diffused MOS (LDMOS) transistors. The active bias network of the present invention first senses the bias current flowing in the targeted transistor and then compares the bias current in the targeted transistor with a stable reference current. The difference between the bias current in the targeted transistor and the reference current is then utilized to adjust the bias of the targeted transistor via a current mirror feedback circuit. The bias current of the targeted transistor then is stable independent of any HCI induced bias changes and changes due to other adverse causes. The sensing MOS transistor used for monitoring bias current is operated in the triode region and has minimum effect on the performance of the targeted transistor.
摘要翻译：补偿热载流子注入（HCI）引起的偏置漂移的有源电流偏置网络，这是金属氧化物半导体（MOS）晶体管，特别是在侧向扩散MOS（LDMOS）晶体管中存在的常见现象。本发明的有源偏置网络首先感测在目标晶体管中流动的偏置电流，然后将目标晶体管中的偏置电流与稳定的参考电流进行比较。然后利用目标晶体管中的偏置电流与参考电流之间的差异来经由电流镜反馈电路调整目标晶体管的偏置。目标晶体管的偏置电流稳定，独立于任何HCl引起的偏置变化和由于其他不利原因引起的变化。用于监控偏置电流的感测MOS晶体管在三极管区域工作，对目标晶体管的性能影响最小。

10. 发明授权

US06707341B2 Semiconductor device with bipolar transistor device 失效
公开(公告)号：US06707341B2
公开(公告)日：2004-03-16
申请号：US09902102
申请日：2001-07-11
申请人： Kazuya Yamamoto , Satoshi Suzuki
发明人： Kazuya Yamamoto , Satoshi Suzuki
IPC分类号： H03F304
CPC分类号： H03F3/605 , H03F3/602
摘要： A single transistor device is configured of a plurality of transistor cells divided and arranged in a plurality of blocks. Corresponding to the blocks a plurality of bias current supply circuits are arranged, respectively, to supply the blocks with individual bias currents, respectively. The bias current supply circuits each have a transistor with a bias condition set to decrease its ability to drive current as the corresponding bias current increases. Thus a negative feedback can be given to an increase in bias current attributed to thermal unevenness.

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