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1. 发明授权

US06636118B1 High-frequency power amplification module and radio communication device 失效
标题翻译：高频功率放大模块和无线通信设备
公开(公告)号：US06636118B1
公开(公告)日：2003-10-21
申请号：US09914678
申请日：2001-11-14
申请人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
发明人： Cyushiro Kusano , Eiichi Hase , Hideyuki Ono , Osamu Kagaya , Yasunari Umemoto , Takahiro Fujita , Kiichi Yamashita
IPC分类号： H03F304
CPC分类号： H01L27/0255 , H03F1/52 , H03F3/195 , H03F2200/444 , H03F2203/21178
摘要： In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.
摘要翻译：在其中级联多个异质结双极型晶体管（npn型HBT）的多级结构的高频功率放大器模块中，将多个pn结二极管串联连接的保护电路连接在每个HBT的集电极和发射极。 p侧连接到集电极侧，并且n侧连接到发射极侧。其中pn结二极管的数量等于或小于pn结二极管串联的保护电路连接在基极和发射极之间。 p侧连接到基极侧，并且n侧连接到发射极侧。通过该结构，由于天线侧的负载的波动，在集电极和发射极两端施加过电压的情况下，集电端子被保护电路的导通状态电压钳位，HBT可以防止被摧毁。由于类似的保护电路组装在基极和发射极之间，即使在制造高频功率放大器模块时操作者接触模块时，也可以防止HBT被保护电路的钳位效应所破坏基极和发射极以及集电极和发射极之间的保护电路。因此，可以实现高频功率放大器模块和无线通信装置的制造成品率的提高，并且可以防止由无线通信装置的负载阻抗的波动引起的破坏。

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