会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of producing a semiconductor dynamic sensor
    • 半导体动态传感器的制造方法
    • US5549785A
    • 1996-08-27
    • US120380
    • 1993-09-14
    • Minekazu SakaiTsuyoshi FukadaMasakazu TeradaShinsuke WatanabeMinoru Nishida
    • Minekazu SakaiTsuyoshi FukadaMasakazu TeradaShinsuke WatanabeMinoru Nishida
    • G01P15/08B23P15/00
    • G01P15/0802Y10S148/159
    • A method of producing a semiconductor dynamic sensor which features an improved sensitivity yet having a small size while avoiding damage to the thin distortion-producing portion. A resist film 49 is photo-patterned on the front main surface of the semiconductor substrate 41 except for the region where the upper isolation grooves are to be formed prior to forming the lower isolation groove 10 by the first etching of the back main surface of the semiconductor substrate 41 (which includes the epitaxial layer 42). Unlike the prior art, therefore, there is no need to spin-coat the front main surface of the semiconductor substrate 41 with the resist film 49 which is followed by photo-patterning after a predetermined region of the semiconductor substrate 41 has been reduced in thickness by the first etching. Therefore, damage therefore to the thin portion by the vacuum chucking the wafer during the spin-coating of the resist film is avoided.
    • 一种制造半导体动态传感器的方法,其具有改善的灵敏度但具有小尺寸,同时避免对薄变形产生部分的损害。 在形成下隔离槽10之前,除了要形成上隔离槽的区域之外,在半导体基板41的前主表面上,通过第一次蚀刻 半导体衬底41(包括外延层42)。 因此,与现有技术不同,不需要在半导体基板41的预定区域的厚度减小之后用抗蚀剂膜49旋涂半导体基板41的前主表面,随后进行光图案化 通过第一次蚀刻。 因此,避免了在抗蚀剂膜的旋转涂覆期间通过夹紧晶片的真空对薄部的损伤。
    • 3. 发明申请
    • HIGH FREQUENCY SECOND HARMONIC OSCILLATOR
    • 高频二次谐波振荡器
    • US20110175686A1
    • 2011-07-21
    • US12911764
    • 2010-10-26
    • Shinsuke WatanabeYoshihiro TsukaharaKo KanayaShinichi Miwa
    • Shinsuke WatanabeYoshihiro TsukaharaKo KanayaShinichi Miwa
    • H03B5/12
    • H03B5/1847H03D2200/0086
    • A high frequency second harmonic oscillator includes a transistor, a first signal line connected at a first end to the base or gate of the transistor, a first shunt capacitor connected at a first end to a second end of the first signal line and at a second end to ground, a second signal line connected at a first end to the collector or drain of the transistor, a second shunt capacitor connected at a first end to a second end of the second signal line and at a second end to ground, and a high capacitance capacitor connected between the first signal line and the second signal line. The first signal line has a length equal to an odd integer multiple of one quarter of the wavelength of a fundamental signal, plus or minus one-sixteenth of the wavelength of the fundamental signal.
    • 高频二次谐波振荡器包括晶体管,在第一端连接到晶体管的基极或栅极的第一信号线,在第一端连接到第一信号线的第二端的第一并联电容器, 在第一端连接到晶体管的集电极或漏极的第二信号线,在第一端连接到第二信号线的第二端并在第二端连接到地的第二并联电容器,以及 连接在第一信号线和第二信号线之间的高容量电容器。 第一信号线具有等于基本信号波长四分之一的奇整数倍的长度,加上或减去基波信号波长的十六分之一。
    • 9. 发明申请
    • SECOND HARMONIC OSCILLATOR
    • 第二和谐振荡器
    • US20090051448A1
    • 2009-02-26
    • US12035724
    • 2008-02-22
    • Shinsuke WatanabeAkira Inoue
    • Shinsuke WatanabeAkira Inoue
    • H03B1/00
    • H03B19/14
    • A second harmonic oscillator has a series positive feedback configuration, suppresses output of a fundamental signal, and outputs a second harmonic signal having a frequency in a range from 1 GHz to 200 GHz generated inside of a circuit. The second harmonic oscillator includes: a transistor having a base terminal, a first emitter terminal, a second emitter terminal, and a collector terminal; a resonator circuit connected to the base terminal; a first transmission line short-circuiting stub connected to one of the two emitter terminals; and a second transmission line short-circuiting stub connected to the other of the two emitter terminals and having a line length obtained by adding one-fourth of one wavelength of the fundamental signal to an integer multiple of one-half wavelength of the fundamental signal.
    • 二次谐波振荡器具有串联正反馈配置,抑制基本信号的输出,并且输出在电路内部产生的频率范围为1GHz至200GHz的二次谐波信号。 二次谐波振荡器包括:具有基极端子,第一发射极端子,第二发射极端子和集电极端子的晶体管; 连接到基座的谐振器电路; 连接到两个发射极端子之一的第一传输线短路短路; 以及连接到两个发射极端子中的另一个的第二传输线短路短路,并且具有通过将基本信号的一个波长的四分之一相加到基本信号的二分之一波长的整数倍而获得的线路长度。