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    • 2. 发明授权
    • Method of producing a semiconductor dynamic sensor
    • 半导体动态传感器的制造方法
    • US5549785A
    • 1996-08-27
    • US120380
    • 1993-09-14
    • Minekazu SakaiTsuyoshi FukadaMasakazu TeradaShinsuke WatanabeMinoru Nishida
    • Minekazu SakaiTsuyoshi FukadaMasakazu TeradaShinsuke WatanabeMinoru Nishida
    • G01P15/08B23P15/00
    • G01P15/0802Y10S148/159
    • A method of producing a semiconductor dynamic sensor which features an improved sensitivity yet having a small size while avoiding damage to the thin distortion-producing portion. A resist film 49 is photo-patterned on the front main surface of the semiconductor substrate 41 except for the region where the upper isolation grooves are to be formed prior to forming the lower isolation groove 10 by the first etching of the back main surface of the semiconductor substrate 41 (which includes the epitaxial layer 42). Unlike the prior art, therefore, there is no need to spin-coat the front main surface of the semiconductor substrate 41 with the resist film 49 which is followed by photo-patterning after a predetermined region of the semiconductor substrate 41 has been reduced in thickness by the first etching. Therefore, damage therefore to the thin portion by the vacuum chucking the wafer during the spin-coating of the resist film is avoided.
    • 一种制造半导体动态传感器的方法,其具有改善的灵敏度但具有小尺寸,同时避免对薄变形产生部分的损害。 在形成下隔离槽10之前,除了要形成上隔离槽的区域之外,在半导体基板41的前主表面上,通过第一次蚀刻 半导体衬底41(包括外延层42)。 因此,与现有技术不同,不需要在半导体基板41的预定区域的厚度减小之后用抗蚀剂膜49旋涂半导体基板41的前主表面,随后进行光图案化 通过第一次蚀刻。 因此,避免了在抗蚀剂膜的旋转涂覆期间通过夹紧晶片的真空对薄部的损伤。
    • 4. 发明申请
    • Server and communication control method
    • 服务器和通信控制方法
    • US20060165062A1
    • 2006-07-27
    • US11096955
    • 2005-04-01
    • Minoru NishidaKousei KataokaYuichi HaraguchiTomoyuki FurutonoTakaaki TauraTakayuki UchihiraRyoji Nakamatsu
    • Minoru NishidaKousei KataokaYuichi HaraguchiTomoyuki FurutonoTakaaki TauraTakayuki UchihiraRyoji Nakamatsu
    • H04L12/66
    • H04L29/06027H04L29/06H04L65/1006H04L65/1043H04L65/1069H04L67/14H04L69/08H04L69/16H04L69/167H04L69/24
    • A server by which time taken to establish a session can be shortened by reducing the number of messages exchanged between a destination terminal and the server and by which the manufacturing costs of terminals can be reduced. An IP version storage section included in the server stores an IP version implemented in the destination terminal under the control of the server. A message receiving section receives a message for establishing a session between a source terminal and the destination terminal from the source terminal. An IP version acquisition section acquires the IP version implemented in the destination terminal corresponding to the message from the IP version storage section. An IP version comparison section compares an IP version which is implemented in the source terminal and which is included in the message with the IP version which is implemented in the destination terminal and which is acquired by the IP version acquisition section. A comparison result sending section sends a result of the comparison by the IP version comparison section to an address converter which makes an address conversion so that IP versions of data frames exchanged between the source terminal and the destination terminal will match.
    • 可以通过减少目的地终端和服务器之间交换的消息的数量来缩短建立会话所需的时间的服务器,并且可以减少终端的制造成本。 包含在服务器中的IP版本存储部分存储在服务器的控制下在目标终端中实现的IP版本。 消息接收部分从源终端接收用于在源终端和目的终端之间建立会话的消息。 IP版本获取部分从IP版本存储部分获取对应于该消息的目的地终端中实现的IP版本。 IP版本比较部分将在源终端中实现并且包括在消息中的IP版本与在目的地终端中实现并由IP版本获取部分获取的IP版本进行比较。 比较结果发送部分将IP版本比较部分的比较结果发送给进行地址转换的地址转换器,使得在源终端和目的地终端之间交换的数据帧的IP版本将匹配。
    • 7. 发明授权
    • Pressure sensor
    • 压力传感器
    • US4939497A
    • 1990-07-03
    • US339826
    • 1989-04-18
    • Minoru NishidaYosiyasu AndoTadashi HattoriYouiti Kotanishi
    • Minoru NishidaYosiyasu AndoTadashi HattoriYouiti Kotanishi
    • G01L9/00
    • G01L19/147
    • The pressure sensor has a housing, a sensing body mounted inside an internal space of the housing and having a cavity, one end thereof being open and other end thereof being closed, to form a pressure introducing portion therein, the closed end thereof having a thin thickness forming a diaphragm for receiving a pressure, and a semiconductor chip mounted on one surface of the closed end opposite to the diaphragm for receiving a pressure. The pressure sensor is characterized in that the sensing body is attenuated at a portion including at least the closed end thereof and has a diameter smaller than that of the remaining portion thereof, and a shoulder is provided therebetween, whereby the sensing body is fixedly connected to the internal space of said housing by abutting the shoulder thereof against a stopper portion provided in the internal space of the housing and the external surface thereof is placed in contact with the inner surface of the internal space of the housing. The pressure sensor having the above construction is highly sensitive and can accurately measure a pressure of a high pressure fluid, as the sensing body is firmly fixed to the inner surface of the housing and has a simple construction.
    • 压力传感器具有壳体,安装在壳体的内部空间内的感测体,具有空腔,其一端开口,另一端封闭,在其内形成压力导入部,其封闭端部具有薄 形成用于接收压力的膜片的厚度,以及安装在与膜片相对的封闭端的一个表面上以接收压力的半导体芯片。 压力传感器的特征在于,感测体在至少包括其封闭端的部分被衰减并且具有比其余部分小的直径,并且在其间设置有肩部,由此感测体固定地连接到 所述壳体的内部空间通过将其肩部抵靠设置在壳体的内部空间中的止动部分及其外表面而与壳体的内部空间的内表面接触。 具有上述结构的压力传感器是高灵敏度的,并且可以精确地测量高压流体的压力,因为感测体牢固地固定在壳体的内表面上并具有简单的结构。
    • 9. 发明授权
    • Ti-Ni alloy articles having a property of reversible shape memory and a
method of making the same
    • 具有可逆形状记忆特性的Ti-Ni合金制品及其制造方法
    • US4707196A
    • 1987-11-17
    • US773435
    • 1985-09-06
    • Toshio HonmaMinoru NishidaKiyoshi Yamauchi
    • Toshio HonmaMinoru NishidaKiyoshi Yamauchi
    • C22C14/00C22C19/03C22F1/00C22F1/10
    • C22F1/006
    • A reversible shape memory (R.S.M.) article of Ti-Ni alloy containing excess Ni over the stoichiometric composition, such as containing 50.3-53.0 at. % Ni which has a dual phase structure of a TiNi compound phase and a precipitated Ni rich compounds phase and the improved R.S.M. property wherein the different two shapes are recovered by thermal cycles between two temperatures sufficient higher and lower than the martensitic transformation temperature (Ms). The alloy prepared by the melting method is heat-treated at 600.degree. C. or more to be made into a single phase of TiNi compound after being worked into a strip plate, and the plate is fixedly wound on a pipe and aged at 300.degree. C.-600.degree. C. for one or more hours, whereby the article having the R.S.M. property with a large amount of shape change by thermal cycles can be obtained.
    • 含有超过化学计量组成的过量Ni的Ti-Ni合金的可逆形状记忆(R.S.M.)制品,如含有50.3-53.0英寸 %Ni,其具有TiNi化合物相的双相结构和沉淀的富Ni化合物相和改进的R.S.M. 性质,其中通过热循环在足够高于和低于马氏体相变温度(Ms)的两个温度之间回收不同的两种形状。 将通过熔融法制备的合金在600℃以上进行热处理,在加工成带状板后,将其制成单相TiNi化合物,将该板固定在管上并在300℃老化 C.-600℃一个或多个小时,由此物品具有RSM 可以获得通过热循环大量形状变化的性质。