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1. 发明授权

US06606371B2 X-ray system 有权
标题翻译： X光系统
公开(公告)号：US06606371B2
公开(公告)日：2003-08-12
申请号：US09745236
申请日：2000-12-19
申请人： Michael Antonell , Erik Cho Houge , John Martin McIntosh , Larry E. Plew , Catherine Vartuli
发明人： Michael Antonell , Erik Cho Houge , John Martin McIntosh , Larry E. Plew , Catherine Vartuli
IPC分类号： G21K106
CPC分类号： G21K1/06 , G21K2201/062 , G21K2201/064 , G21K2201/067
摘要： A reflective lens with at least one curved surface formed of polycrystalline material. In one embodiment, a lens structure includes a substrate having a surface of predetermined curvature and a film formed along a surface of the substrate with multiple individual members each having at least one similar orientation relative to the portion of the substrate surface adjacent the member such that collectively the members provide predictable angles for diffraction of x-rays generated from a common source. A system is also provided for performing an operation with x-rays. In one embodiment, a system includes a source for generating the x-rays, a polycrystalline surface region having crystal spacing suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, and transmitting the reflected x-rays to a reference position. An associated method includes providing x-rays to polycrystalline surface region having crystal spacings suitable for reflecting a plurality of x-rays at the same Bragg angle along the region, transmitting the reflected x-rays to a reference position and positioning a sample between the surface region and the reference position so that the x-rays are transmitted through the sample.
摘要翻译：具有由多晶材料形成的至少一个曲面的反射透镜。在一个实施例中，透镜结构包括具有预定曲率的表面的基底和沿着基底的表面形成的膜，多个单独的构件各自具有相对于邻近构件的基底表面的部分的至少一个相似的取向，使得共同地，这些构件为从公共源产生的x射线的衍射提供可预测的角度。还提供了一种用于使用X射线进行操作的系统。在一个实施例中，系统包括用于产生x射线的源，具有适合于沿着该区域以相同的布拉格角反射多个x射线的晶体间距的多晶表面区域，以及将反射的x射线透射到参考位置。相关联的方法包括向具有晶体间距的多晶表面区域提供x射线，该晶体间距适于沿着该区域以相同的布拉格角反射多个x射线，将反射的x射线透射到参考位置，并将样品定位在表面区域和参考位置，使得x射线透射通过样品。

2. 发明授权

US06534851B1 Modular semiconductor substrates 有权
标题翻译：模块化半导体衬底
公开(公告)号：US06534851B1
公开(公告)日：2003-03-18
申请号：US09642376
申请日：2000-08-21
申请人： Michael Antonell , Erik Cho Houge , Nitin Patel , Larry E. Plew , Catherine Vartuli
发明人： Michael Antonell , Erik Cho Houge , Nitin Patel , Larry E. Plew , Catherine Vartuli
IPC分类号： H01L2306
CPC分类号： H01L21/67346 , H01L22/20 , H01L22/34
摘要： A modular substrate-based processing scheme for producing semiconductor devices provides multiple modular processing units which may be arranged together to form any of various cohesive processing units or they may be individually or sequentially processed through standard semiconductor processing equipment. The cohesive processing units are processed unitarily providing for multiple modular processing units to be processed simultaneously. The modular processing units may be formed of a thick semiconductor substrate or a semiconductor substrate mounted on a further substrate such as a ceramic material. The modular processing units may each contain ribs, grooves, posts or other features to aid in handling and placement of the individual units.
摘要翻译：用于制造半导体器件的基于模块化基板的处理方案提供多个模块化处理单元，其可以被布置在一起以形成各种内聚处理单元中的任何一个，或者可以通过标准半导体处理设备单独或顺序地处理。整体处理单元被一体处理，提供要同时处理的多个模块化处理单元。模块化处理单元可以由安装在诸如陶瓷材料的另外的基板上的厚半导体衬底或半导体衬底形成。模块化处理单元可以各自包含肋，槽，柱或其他特征以帮助处理和放置各个单元。

3. 发明授权

US06713409B2 Semiconductor manufacturing using modular substrates 有权
标题翻译：使用模块化基板的半导体制造
公开(公告)号：US06713409B2
公开(公告)日：2004-03-30
申请号：US10303280
申请日：2002-11-25
申请人： Michael Antonell , Erik Cho Houge , Nitin Patel , Larry E. Plew , Catherine Vartuli
发明人： Michael Antonell , Erik Cho Houge , Nitin Patel , Larry E. Plew , Catherine Vartuli
IPC分类号： H01L2100
CPC分类号： H01L21/67346 , H01L22/20 , H01L22/34
摘要： A manufacturing method using a modular substrate-based processing scheme for producing semiconductor devices, provides multiple modular processing units which may be arranged together to form any of various cohesive processing units or individually or sequentially processed through standard semiconductor processing equipment. The cohesive processing units are processed unitarily providing for multiple modular processing units to be processed simultaneously. The modular processing units may be formed of a thick semiconductor substrate or a semiconductor substrate mounted on a further substrate such as a ceramic material. The modular processing units may each contain ribs, grooves, posts or other features to aid in handling and placement of the individual units.
摘要翻译：使用基于模块化的基于基板的处理方法来制造半导体器件的制造方法提供了多个模块化处理单元，其可以被布置在一起以形成任何各种内聚处理单元，或者通过标准半导体处理设备单独地或顺序地处理。整体处理单元被一体处理，提供要同时处理的多个模块化处理单元。模块化处理单元可以由安装在诸如陶瓷材料的另外的基板上的厚半导体衬底或半导体衬底形成。模块化处理单元可以各自包含肋，槽，柱或其他特征以帮助处理和放置各个单元。

4. 发明授权

US06695572B2 Method and apparatus for minimizing semiconductor wafer contamination 有权
标题翻译：用于最小化半导体晶片污染的方法和设备
公开(公告)号：US06695572B2
公开(公告)日：2004-02-24
申请号：US09966156
申请日：2001-09-28
申请人： Michael Antonell , Erik Cho Houge , Larry E. Plew , Catherine Vartuli , Jennifer Juszczak
发明人： Michael Antonell , Erik Cho Houge , Larry E. Plew , Catherine Vartuli , Jennifer Juszczak
IPC分类号： B65G4907
CPC分类号： H01L21/6732
摘要： A method and apparatus for minimizing the surface contamination of semiconductor wafers (11) during the semiconductor device manufacturing process. Semiconductor wafers (11) are stored in a storage cassette (12) with their face sides (17) facing downward and their back sides (16) facing upward. Particulate contamination present on the back sides of the wafers is thereby secured to the wafers by the force of gravity, and the faces of the wafers are shielded from falling debris. An automated wafer handling device (19) is provided with a rotary joint (22) to accomplish the wafer flipping motion before inserting a wafer into a cassette and after removing the wafer from the cassette.
摘要翻译：一种在半导体器件制造过程中最小化半导体晶片（11）的表面污染的方法和装置。半导体晶片（11）被储存在存储盒（12）中，其表面（17）面向下并且它们的背面（16）面向上。因此，通过重力将晶片的背面存在的颗粒污染物固定在晶片上，并且晶片的表面被遮蔽而不会掉落。自动晶片处理装置（19）设置有旋转接头（22），以在将晶片插入盒内并在从盒中取出晶片之后实现晶片翻转运动。

5. 发明授权

US06714892B2 Three dimensional reconstruction metrology 有权
标题翻译：三维重建计量学
公开(公告)号：US06714892B2
公开(公告)日：2004-03-30
申请号：US09967119
申请日：2001-09-28
申请人： Erik Cho Houge , John Martin McIntosh , Larry E. Plew
发明人： Erik Cho Houge , John Martin McIntosh , Larry E. Plew
IPC分类号： G06F1500
CPC分类号： G03F7/70491 , G03F7/70625 , Y10S977/852
摘要： A system and method of metrology (10) whereby a three dimensional shape profile is defined (16) for a surface feature on a substrate by applying (38) a transform function F(x) to an image intensity map I(x,y) obtained (40) by inspecting the substrate with a scanning electron microscope (12). The transform function F(x) is developed (34) by correlating the image intensity map of a first wafer (18) to a height vector (32) obtained by inspecting the first wafer with a more accurate metrology tool, for example a stylus nanoprofilometer (14). A simple ratio-based transform may be used to develop F(x). An asymmetric multiple parameter characterization of the three dimensional shape profile may be developed (74) by plotting critical space and width dimensions (SL, SR, W1, WR) from a vertical axis (C—C) as a function of height of the feature.
摘要翻译：一种计量系统和方法（10），其中通过将变换函数F（x）应用于图像强度图I（x，y）（38）来定义（16）用于衬底上的表面特征的三维形状轮廓，通过用扫描电子显微镜（12）检查基板得到（40）。通过将第一晶片（18）的图像强度图与通过用更精确的计量工具检查第一晶片获得的高度矢量（32）相关联来开发变换函数F（x），例如，触笔纳米玻璃体计（14）。可以使用简单的基于比例的变换来开发F（x）。可以通过从垂直轴（C-C）绘制关键空间和宽度尺寸（SL，SR，W1，WR）作为特征的高度的函数来开发三维形状轮廓的不对称多参数表征（74）。

6. 发明授权

US06651226B2 Process control using three dimensional reconstruction metrology 有权
公开(公告)号：US06651226B2
公开(公告)日：2003-11-18
申请号：US09967114
申请日：2001-09-28
申请人： Erik Cho Houge , John Martin McIntosh , Larry E. Plew
发明人： Erik Cho Houge , John Martin McIntosh , Larry E. Plew
IPC分类号： G06F1750
CPC分类号： G03F7/70491 , G03F7/70625
摘要： In-line process control for 120 nm and 100 nm lithography using the installed scanning electron microscope (SEM) equipment base. A virtual three-dimensional representation of a photoresist feature is developed by applying a transform function to SEM intensity data representing the feature. The transform function correlates highly accurate height vector data, such as provided by a stylus nanoprofilometer or scatterometer, with the highly precise intensity data from the SEM. A multiple parameter characterization of at least one critical dimension of the virtual feature is compared to an acceptance pattern template, with the results being used to control a downstream etch process or an upstream lithography process. A multiple parameter characteristic of a three dimensional representation of the resulting post-etch final feature may be compared to device performance data to further refine the acceptance pattern template.

7. 发明授权

US06405584B1 Probe for scanning probe microscopy and related methods 有权
标题翻译：扫描探针显微镜和相关方法的探针
公开(公告)号：US06405584B1
公开(公告)日：2002-06-18
申请号：US09412130
申请日：1999-10-05
申请人： Jeffrey Bruce Bindell , Erik Cho Houge , Larry E. Plew , Terri Lynn Shofner , Fred Anthony Stevie
发明人： Jeffrey Bruce Bindell , Erik Cho Houge , Larry E. Plew , Terri Lynn Shofner , Fred Anthony Stevie
IPC分类号： G01B528
CPC分类号： G01Q60/38 , Y10S977/862 , Y10S977/878
摘要： A scanning probe microscope includes a sensor head adjacent a stage for holding a sample, a scanning actuator for positioning the sensor head relative to the sample, and a probe carried by the sensor head. The probe preferably includes a base connected to the sensor head, a shank extending from the base at an angle offset from perpendicular to the base, and a tip connected to a distal end of the shank for contacting the sample. The angle is preferably in a range of 5 to 20°. The tip is preferably laterally offset from the base to permit viewing of the tip without interference from the shank and the base. Thus, the location of the probe tip relative to the sample may be more easily determined.
摘要翻译：扫描探针显微镜包括与用于保持样品的台相邻的传感器头，用于相对于样品定位传感器头的扫描致动器和由传感器头承载的探针。探针优选地包括连接到传感器头的基座，从基部延伸的角度与垂直于基部的角度偏离的杆，以及连接到柄的远端以用于接触样本的尖端。该角度优选在5〜20°的范围内。顶端优选地从基部侧向偏移以允许观察尖端而不受到柄和基部的干扰。因此，可以更容易地确定探针尖端相对于样品的位置。

8. 发明授权

US06577970B2 Method of determining a crystallographic quality of a material located on a substrate 有权
公开(公告)号：US06577970B2
公开(公告)日：2003-06-10
申请号：US09801455
申请日：2001-03-08
申请人： Erik C. Houge , John M. McIntosh , Larry E. Plew , Fred A. Stevie , Catherine Vartuli
发明人： Erik C. Houge , John M. McIntosh , Larry E. Plew , Fred A. Stevie , Catherine Vartuli
IPC分类号： G01N3700
CPC分类号： G01N23/225
摘要： The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.

9. 发明授权

US06727720B2 Probe having a microstylet 有权
标题翻译：探头有一个微型袜子
公开(公告)号：US06727720B2
公开(公告)日：2004-04-27
申请号：US09941085
申请日：2001-08-28
申请人： Erik C. Houge , Ryan K. Maynard , John M. McIntosh , Larry E. Plew , Jeffrey B. Bindell
发明人： Erik C. Houge , Ryan K. Maynard , John M. McIntosh , Larry E. Plew , Jeffrey B. Bindell
IPC分类号： G01R3102
CPC分类号： G01R3/00 , B82Y10/00 , G01R1/06755 , Y10S977/876
摘要： A probe comprising a probe body having a body longitudinal axis and a shoulder, and a microstylet mechanically coupled to the shoulder, and a method of manufacturing the same. The microstylet extends from the shoulder and has a microstylet longitudinal axis coincident the body longitudinal axis with the microstylet having a cross section substantially smaller than a cross section of the probe body.
摘要翻译：一种探针，包括具有身体纵向轴线和肩部的探针体和机械地联接到肩部的微型步骤及其制造方法。微型电动工具从肩部延伸，并且具有与主体纵向轴线重合的微型电子管纵向轴线，该微型电极具有基本上小于探针主体横截面的横截面。

10. 发明授权

US5804460A Linewidth metrology of integrated circuit structures 失效
标题翻译：集成电路结构的线宽度量
公开(公告)号：US5804460A
公开(公告)日：1998-09-08
申请号：US931066
申请日：1997-09-15
申请人： Jeffrey Bruce Bindell , Dennis Earl Schrope , Fred Anthony Stevie , Richard J. Dare , Larry E. Plew
发明人： Jeffrey Bruce Bindell , Dennis Earl Schrope , Fred Anthony Stevie , Richard J. Dare , Larry E. Plew
IPC分类号： G01Q40/02 , H01L21/66 , G01D18/00 , G06K9/28
CPC分类号： H01L22/20 , H01L22/12 , Y10S977/852 , Y10S977/86 , Y10S977/869 , Y10S977/881 , Y10S977/888
摘要： Illustratively, the present invention includes a method of integrated circuit manufacturing which includes forming a raised topological feature upon a first substrate. A portion of the raised feature is removed, thereby exposing a cross sectional view of the raised feature with the substrate remaining substantially undamaged. The cross sectional view has a critical dimension. The critical dimension of the cross sectional view is measured using a first measuring instrument. Then the critical dimension is measured using a second measuring instrument. The measurements of the first and second measuring instruments are correlated. Then, using the second measuring instrument, raised features via plurality of second substrates are measured.
摘要翻译：说明性地，本发明包括集成电路制造方法，其包括在第一基板上形成凸起的拓扑特征。升高的部分的一部分被去除，从而暴露凸起特征的横截面图，其中基底保持基本上未损坏。截面图具有临界尺寸。使用第一测量仪器测量横截面视图的临界尺寸。然后使用第二测量仪器测量临界尺寸。第一和第二测量仪器的测量值相关。然后，使用第二测量仪器，测量经由多个第二基板的凸起特征。

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