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1. 发明授权

US06178653B2 Probe tip locator 有权
标题翻译：探头提示定位器
公开(公告)号：US06178653B2
公开(公告)日：2001-01-30
申请号：US09196827
申请日：1998-11-20
申请人： Joseph Edward Griffith , Charles E. Bryson, III , Jeffrey Bruce Bindell
发明人： Joseph Edward Griffith , Charles E. Bryson, III , Jeffrey Bruce Bindell
IPC分类号： G01B900
CPC分类号： G01Q30/06 , G01B11/002 , G01Q40/02 , Y10S977/851
摘要： A probe tip locator for use in determining the x-axis location and y-axis location of a probe tip of a microscope relative to the locator, the locator comprising a plurality of first reference lines parallel in a first direction, each of the first reference lines representing a predetermined x-axis location of the probe tip; a plurality of sets of parallel encoded bit fields, each one of the sets corresponding to one of the first reference lines; and a plurality of second reference lines parallel in a second direction, each one of the second reference lines intersecting at least one of the first reference lines at an acute angle, such that a scan of a portion of the locator is used to determine the x-axis location and y-axis location of the probe tip relative to the probe tip locator by movement of the probe tip relative to the probe tip locator.
摘要翻译：一种用于确定显微镜相对于定位器的探针尖端的x轴位置和y轴位置的探针尖端定位器，所述定位器包括沿第一方向平行的多个第一参考线，每个第一参考点表示探针尖端的预定x轴位置的线; 多组并行编码比特字段，每一组对应于第一参考线之一; 以及沿第二方向平行的多个第二参考线，每个第二参考线以锐角与至少一个第一参考线相交，使得定位器的一部分的扫描被用于确定x 通过探针尖端相对于探针尖端定位器的移动，探针尖端相对于探针尖端定位器的轴位置和y轴位置。

2. 发明授权

US06405584B1 Probe for scanning probe microscopy and related methods 有权
标题翻译：扫描探针显微镜和相关方法的探针
公开(公告)号：US06405584B1
公开(公告)日：2002-06-18
申请号：US09412130
申请日：1999-10-05
申请人： Jeffrey Bruce Bindell , Erik Cho Houge , Larry E. Plew , Terri Lynn Shofner , Fred Anthony Stevie
发明人： Jeffrey Bruce Bindell , Erik Cho Houge , Larry E. Plew , Terri Lynn Shofner , Fred Anthony Stevie
IPC分类号： G01B528
CPC分类号： G01Q60/38 , Y10S977/862 , Y10S977/878
摘要： A scanning probe microscope includes a sensor head adjacent a stage for holding a sample, a scanning actuator for positioning the sensor head relative to the sample, and a probe carried by the sensor head. The probe preferably includes a base connected to the sensor head, a shank extending from the base at an angle offset from perpendicular to the base, and a tip connected to a distal end of the shank for contacting the sample. The angle is preferably in a range of 5 to 20°. The tip is preferably laterally offset from the base to permit viewing of the tip without interference from the shank and the base. Thus, the location of the probe tip relative to the sample may be more easily determined.
摘要翻译：扫描探针显微镜包括与用于保持样品的台相邻的传感器头，用于相对于样品定位传感器头的扫描致动器和由传感器头承载的探针。探针优选地包括连接到传感器头的基座，从基部延伸的角度与垂直于基部的角度偏离的杆，以及连接到柄的远端以用于接触样本的尖端。该角度优选在5〜20°的范围内。顶端优选地从基部侧向偏移以允许观察尖端而不受到柄和基部的干扰。因此，可以更容易地确定探针尖端相对于样品的位置。

3. 发明授权

US5804460A Linewidth metrology of integrated circuit structures 失效
标题翻译：集成电路结构的线宽度量
公开(公告)号：US5804460A
公开(公告)日：1998-09-08
申请号：US931066
申请日：1997-09-15
申请人： Jeffrey Bruce Bindell , Dennis Earl Schrope , Fred Anthony Stevie , Richard J. Dare , Larry E. Plew
发明人： Jeffrey Bruce Bindell , Dennis Earl Schrope , Fred Anthony Stevie , Richard J. Dare , Larry E. Plew
IPC分类号： G01Q40/02 , H01L21/66 , G01D18/00 , G06K9/28
CPC分类号： H01L22/20 , H01L22/12 , Y10S977/852 , Y10S977/86 , Y10S977/869 , Y10S977/881 , Y10S977/888
摘要： Illustratively, the present invention includes a method of integrated circuit manufacturing which includes forming a raised topological feature upon a first substrate. A portion of the raised feature is removed, thereby exposing a cross sectional view of the raised feature with the substrate remaining substantially undamaged. The cross sectional view has a critical dimension. The critical dimension of the cross sectional view is measured using a first measuring instrument. Then the critical dimension is measured using a second measuring instrument. The measurements of the first and second measuring instruments are correlated. Then, using the second measuring instrument, raised features via plurality of second substrates are measured.
摘要翻译：说明性地，本发明包括集成电路制造方法，其包括在第一基板上形成凸起的拓扑特征。升高的部分的一部分被去除，从而暴露凸起特征的横截面图，其中基底保持基本上未损坏。截面图具有临界尺寸。使用第一测量仪器测量横截面视图的临界尺寸。然后使用第二测量仪器测量临界尺寸。第一和第二测量仪器的测量值相关。然后，使用第二测量仪器，测量经由多个第二基板的凸起特征。

4. 发明授权

US4107835A Fabrication of semiconductive devices 失效
标题翻译：半导体器件制造
公开(公告)号：US4107835A
公开(公告)日：1978-08-22
申请号：US767681
申请日：1977-02-11
申请人： Jeffrey Bruce Bindell , Edward Franklin Labuda , William Michael Moller
发明人： Jeffrey Bruce Bindell , Edward Franklin Labuda , William Michael Moller
IPC分类号： H01L29/872 , H01L21/265 , H01L21/285 , H01L29/47 , B01J17/00
CPC分类号： H01L21/26513 , H01L21/28537 , H01L29/47
摘要： An improved Schottky barrier connection is made to a desired region of a silicon wafer by implanting the region with ions to peak at a particular depth; depositing a suitable contact material, such as platinum, over such region; and then heating the wafer to react the platinum and the silicon such that the interface between the platinum-silicide and the silicon penetrates beyond the peak depth of the implant, some of the encountered dopant ions being accumulated at the advancing interface in snowplow fashion. There results a narrowed and concentrated layer of implanted ions localized just below the interface of the silicide and the silicon. The presence of this layer permits conduction in the forward direction at lower applied voltages without substantially degrading the reverse blocking characteristics.
摘要翻译：通过将具有离子的区域注入到特定深度的峰值，对硅晶片的期望区域进行改进的肖特基势垒连接; 在这样的区域上沉积合适的接触材料，例如铂; 然后加热晶片以使铂和硅反应，使得硅化镍和硅之间的界面渗透超过植入物的峰值深度，一些遇到的掺杂剂离子以积雪方式积聚在前进界面处。导致位于硅化物和硅的界面正下方的注入离子的变窄和浓缩层。该层的存在允许在较低的施加电压下在正向传导，而基本上不会降低反向阻挡特性。

5. 发明授权

US4111783A Triode sputtering system 失效
标题翻译：三重喷射系统
公开(公告)号：US4111783A
公开(公告)日：1978-09-05
申请号：US849600
申请日：1977-11-08
申请人： Jeffrey Bruce Bindell , Lowell Henry Holschwandner , Edward Franklin Labuda , William Dennis Ryden
发明人： Jeffrey Bruce Bindell , Lowell Henry Holschwandner , Edward Franklin Labuda , William Dennis Ryden
IPC分类号： C23C14/34 , C23C15/00
CPC分类号： C23C14/3478
摘要： A triode sputtering system comprises a plasma confining enclosure including a cathode at one end, an anode at the other, and a central plasma supporting portion. Contamination caused by unwanted sputtering of the surfaces of the confining apparatus is substantially eliminated by making the confining enclosure in several, typically four, electrically isolated portions, namely, the cathode support portion, the anode support portion and a pair of plasma support portions. In the structure described there is avoided the relatively large potential difference between the confinement enclosure and the plasma, which occurs predominantly at the anode support end of the confining enclosure of prior art one-piece apparatus. This portion of the apparatus has been found to be the major source of unwanted sputtering therein.

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