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1. 发明授权

US4987472A Compound semiconductor epitaxial wafer 失效
标题翻译：化合物半导体外延片
公开(公告)号：US4987472A
公开(公告)日：1991-01-22
申请号：US409132
申请日：1989-09-19
申请人： Masahisa Endo , Nobuhiko Noto , Toshiharu Takahashi
发明人： Masahisa Endo , Nobuhiko Noto , Toshiharu Takahashi
IPC分类号： H01L21/205 , H01L33/16 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/16
摘要： An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respect of the electroluminescent intensity of the light-emitting diode prepared therefrom, yield of the light-emitting diodes which can be obtained from said single epitaxial wafer the growth rate of the epitaxial layer when the substrate wafer has a crystallographic surface plane which is inclined from the {001} plane in the direction by 8.degree. to 15.degree. or a crystallographically equivalent plane thereto.

2. 发明授权

US06847056B2 Light emitting device 失效
标题翻译：发光装置
公开(公告)号：US06847056B2
公开(公告)日：2005-01-25
申请号：US10240101
申请日：2002-01-29
申请人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
发明人： Nobuhiko Noto , Masato Yamada , Masahisa Endo , Hitoshi Ikeda , Shinji Nozaki , Kazuo Uchida , Hiroshi Morisaki
IPC分类号： H01L33/32 , H01L33/42 , H01L33/00
CPC分类号： H01L33/42 , H01L33/0079
摘要： A light emitting device 100 has a structure in which a p type InGaAs layer 7 as an electrode contact layer and an ITO electrode layer 8 as an oxide transparent electrode layer are formed in the order in a first major surface 17 side of a light emitting layer section 24. In a second major surface 18 side of the light emitting layer section 24, an n type InGaAs layer 9 as an electrode contact layer and an ITO electrode layer 10 as an oxide transparent electrode layer are formed in the order. The ITO electrode layers 8 and 10 together with the p type InGaAs layer 7 and the n type InGaAs layer 9 are formed on the respective both major surfaces 17 and 18 of the light emitting layer section 24 so as to cover the respective both major surfaces 17 and 18 in the entirety thereof.
摘要翻译：发光器件100具有以下结构：作为电极接触层的ap型InGaAs层7和作为氧化物透明电极层的ITO电极层8按照发光层部分的第一主表面17侧的顺序形成在发光层部分24的第二主表面18侧，依次形成作为电极接触层的n型InGaAs层9和作为氧化物透明电极层的ITO电极层10。在发光层部分24的两个主表面17和18上形成ITO电极层8和10以及p型InGaAs层7和n型InGaAs层9，以覆盖相应的两个主表面17 全部为18。

3. 发明申请

US20120244679A1 METHOD FOR PRODUCING BONDED WAFER 有权
标题翻译：生产粘结波的方法
公开(公告)号：US20120244679A1
公开(公告)日：2012-09-27
申请号：US13514414
申请日：2010-11-18
申请人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
发明人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/3247 , H01L21/302 , H01L21/3065 , H01L21/76254
摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
摘要翻译：本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理，其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法在离子注入分层方法中进行分层。

4. 发明授权

US08076223B2 Method for producing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08076223B2
公开(公告)日：2011-12-13
申请号：US12309527
申请日：2007-07-04
申请人： Satoshi Oka , Nobuhiko Noto
发明人： Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/20 , H01L21/205
CPC分类号： H01L21/0251 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/02661
摘要： The present invention is a method for producing a semiconductor substrate, including steps of forming a SiGe gradient composition layer and a SiGe constant composition layer on a Si single crystal substrate, flattening a surface of the SiGe constant composition layer, removing a natural oxide film on the flattened surface of the SiGe constant composition layer, and forming a strained Si layer on the surface of the SiGe constant composition layer from which the natural oxide film has been removed, wherein the formation of the SiGe gradient composition layer and the formation of the SiGe constant composition layer are performed at a temperature T1 that is higher than 800° C., the removal of the natural oxide film from the surface of the SiGe constant composition layer is performed in a reducing atmosphere through a heat treatment at a temperature T2 that is equal to or higher than 800° C. and lower than the temperature T1, and the formation of the strained Si layer is performed at a temperature T3 that is lower than the temperature T1. This method enables epitaxial growth of the strained Si layer on the flattened SiGe layer without degrading surface flatness of the SiGe layer.
摘要翻译：本发明是一种半导体衬底的制造方法，包括以下步骤：在Si单晶衬底上形成SiGe梯度组合物层和SiGe恒定组成层，使SiGe恒定组合物层的表面平坦化，除去天然氧化膜 SiGe恒定组成层的平坦化表面，并且在去除了天然氧化物膜的SiGe恒定组合物层的表面上形成应变Si层，其中形成SiGe梯度组合物层并形成SiGe 恒定组成层在高于800℃的温度T1下进行，通过在温度T2即热处理下在还原气氛中从SiGe恒定组成层的表面除去天然氧化膜等于或高于800℃并低于温度T1，并且应变Si层的形成在te 温度T3低于温度T1。该方法能够使平坦化的SiGe层上的应变Si层外延生长，而不降低SiGe层的表面平坦度。

5. 发明申请

US20110281420A1 METHOD FOR MANUFACTURING SOI WAFER 审中-公开
标题翻译： SOI WAFER制造方法
公开(公告)号：US20110281420A1
公开(公告)日：2011-11-17
申请号：US13145275
申请日：2010-01-08
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/301
CPC分类号： H01L21/76254 , H01L21/30608 , H01L21/31111
摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.
摘要翻译：一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

6. 发明申请

US20110104870A1 METHOD FOR MANUFACTURING BONDED WAFER 有权
标题翻译：制造粘结波的方法
公开(公告)号：US20110104870A1
公开(公告)日：2011-05-05
申请号：US12866271
申请日：2009-02-17
申请人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
摘要翻译：一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

7. 发明申请

US20100003803A1 MANUFACTURING METHOD OF STRAINED SI SUBSTRATE 审中-公开
标题翻译：应变SI基板的制造方法
公开(公告)号：US20100003803A1
公开(公告)日：2010-01-07
申请号：US12312789
申请日：2007-11-29
申请人： Satoshi Oka , Nobuhiko Noto
发明人： Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/762 , H01L21/20
CPC分类号： H01L21/02532 , C30B25/183 , C30B29/06 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/0262 , H01L21/02661
摘要： According to the present invention, there is provided a manufacturing method of a strained Si substrate including at least steps of: forming a lattice-relaxed SiGe layer on a silicon single crystal substrate; flattening a surface of the SiGe layer by CMP; and forming a strained Si layer on the surface of the flattened SiGe layer, wherein the method comprises steps of: subjecting the surface of the SiGe layer to SC1 cleaning, before forming the strained Si layer on the lattice-relaxed SiGe layer surface that is flattened; heat-treating the substrate having the SiGe layer after being subjected to SC1 cleaning in a hydrogen-containing atmosphere at 800° C. or higher; immediately forming a protective Si layer on the SiGe layer surface on the heat-treated substrate, without lowering the temperature below 800° C. after the heat treatment; and forming the strained Si layer on the surface of the protective Si layer at a temperature lower than the temperature of forming the protective Si layer. Thereby, a manufacturing method of a strained Si substrate having low surface roughness, threading dislocation density and low particle level can be provided.
摘要翻译：根据本发明，提供一种应变Si衬底的制造方法，至少包括以下步骤：在硅单晶衬底上形成晶格弛豫的SiGe层; 通过CMP使SiGe层的表面平坦化; 并且在平坦化的SiGe层的表面上形成应变Si层，其中所述方法包括以下步骤：在平坦化的晶格弛豫的SiGe层表面上形成应变Si层之前，对SiGe层的表面进行SC1清洁 ; 在800℃以上的含氢气氛中进行SC1清洗后，对具有SiGe层的基板进行热处理; 在热处理基板上的SiGe层表面上立即形成保护性Si层，在热处理后不降低800℃以下的温度; 以及在比形成保护Si层的温度低的温度下在保护Si层的表面上形成应变Si层。因此，可以提供具有低表面粗糙度，穿透位错密度和低颗粒水平的应变Si衬底的制造方法。

8. 发明申请

US20060185581A1 Method for producing a semiconductor wafer 审中-公开
标题翻译：半导体晶片的制造方法
公开(公告)号：US20060185581A1
公开(公告)日：2006-08-24
申请号：US11353046
申请日：2006-02-14
申请人： Hiroji Aga , Nobuhiko Noto , Kiyoshi Mitani
发明人： Hiroji Aga , Nobuhiko Noto , Kiyoshi Mitani
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B31/22 , C30B29/06 , C30B29/52
摘要： The present invention provides a method for producing a semiconductor wafer comprising at least steps of, forming a Si1-XGeX layer (0
摘要翻译：本发明提供一种用于制造半导体晶片的方法，该方法至少包括以下步骤：形成具有临界状态的Si 1-X 1 Ge x X 1层（0

9. 发明授权

US5442203A Semiconductor light emitting device having AlGaAsP light reflecting layers 失效
标题翻译：具有AlGaAsP光反射层的半导体发光器件
公开(公告)号：US5442203A
公开(公告)日：1995-08-15
申请号：US299084
申请日：1994-08-18
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/10 , H01L33/14 , H01L33/30 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19 , H01L33/00
CPC分类号： H01L33/14 , H01L33/10 , H01S5/20 , H01S5/32308 , H01S5/2004 , H01S5/3211 , H01S5/32325
摘要： A semiconductor light emitting device has a light emitting layer portion comprising AlGaInP layers formed on a GaAs substrate. A light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between the GaAs substrate and the light emitting layer portion. The light reflecting layer portion comprises Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v layers (where: 0.ltoreq.w.ltoreq.1, 0
摘要翻译：半导体发光器件具有包含在GaAs衬底上形成的AlGaInP层的发光层部分。在GaAs衬底和发光层部分之间设置包括具有不同折射率的交替叠层的光反射层部分。光反射层部分包括AlwGa1-wAs1-vPv层（其中：0≤w≤1,0

10. 发明申请

US20140097523A1 METHOD FOR MANUFACTURING BONDED WAFER AND BONDED SOI WAFER 有权
标题翻译：用于制造粘结波和粘结SOI波形的方法
公开(公告)号：US20140097523A1
公开(公告)日：2014-04-10
申请号：US14114959
申请日：2012-04-25
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/762 , H01L29/02 , H01L21/265
CPC分类号： H01L29/02 , H01L21/265 , H01L21/26586 , H01L21/68764 , H01L21/68771 , H01L21/76254 , Y10S438/977
摘要： A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation.
摘要翻译：制造接合晶片的方法包括：使用间歇型离子注入机的离子注入步骤; 键合步骤，将接合晶片的离子注入表面直接或通过绝缘膜粘合到基底晶片的表面; 以及在离子注入层分层接合晶片的分层步骤，由此在基底晶片上制造具有薄膜的接合晶片，其中在离子注入步骤中执行的接合晶片的离子注入被分成多个在每次离子注入之后，接合晶片在其自身的轴上旋转预定的旋转角度，并且在通过旋转获得的布置位置处执行下一个离子注入。

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