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1. 发明申请

US20120244679A1 METHOD FOR PRODUCING BONDED WAFER 有权
标题翻译：生产粘结波的方法
公开(公告)号：US20120244679A1
公开(公告)日：2012-09-27
申请号：US13514414
申请日：2010-11-18
申请人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
发明人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
IPC分类号： H01L21/20
CPC分类号： H01L21/3247 , H01L21/302 , H01L21/3065 , H01L21/76254
摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
摘要翻译：本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理，其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法在离子注入分层方法中进行分层。

2. 发明授权

US08691665B2 Method for producing bonded wafer 有权
标题翻译：接合晶片的制造方法
公开(公告)号：US08691665B2
公开(公告)日：2014-04-08
申请号：US13514414
申请日：2010-11-18
申请人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
发明人： Satoshi Oka , Hiroji Aga , Masahiro Kato , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46 , H01L21/00
CPC分类号： H01L21/3247 , H01L21/302 , H01L21/3065 , H01L21/76254
摘要： The present invention is directed to a method for producing a bonded wafer, the method in which heat treatment for flattening the surface of a thin film is performed on a bonded wafer made by the ion implantation delamination method in an atmosphere containing hydrogen or hydrogen chloride, wherein the surface of a susceptor on which the bonded wafer is to be placed, the susceptor used at the time of flattening heat treatment, is coated with a silicon film in advance. As a result, a method for producing a bonded wafer is provided, the method by which a bonded wafer having a thin film with good film thickness uniformity can be obtained even when heat treatment for flattening the surface of a thin film of a bonded wafer after delamination is performed in the ion implantation delamination method.
摘要翻译：本发明涉及一种接合晶片的制造方法，其特征在于，在含有氢或氯化氢的气氛中，对由离子注入脱层法制成的接合晶片进行使薄膜表面平坦化的热处理，其中预先在其上放置接合晶片的基座的表面，在平坦化热处理时使用的基座被涂覆有硅膜。结果，提供了一种接合晶片的制造方法，即使在将粘合晶片的薄膜的表面平坦化的热处理后，也可以获得具有良好的膜厚均匀性的薄膜的接合晶片的方法在离子注入分层方法中进行分层。

3. 发明申请

US20130102126A1 METHOD FOR MANUFACTURING BONDED WAFER 审中-公开
标题翻译：制造粘结波的方法
公开(公告)号：US20130102126A1
公开(公告)日：2013-04-25
申请号：US13699118
申请日：2011-04-21
申请人： Hiroji Aga , Satoshi Oka , Nobuhiko Noto
发明人： Hiroji Aga , Satoshi Oka , Nobuhiko Noto
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01L21/302 , H01L21/3065 , H01L21/3247 , H01L21/76254
摘要： A method for manufacturing a bonded wafer including: forming an ion-implanted layer in a bond wafer, bonding the bond wafer to a base wafer, delaminating the bond wafer at the ion-implanted layer, and performing a flattening heat treatment on a surface after delamination, in which a silicon single crystal wafer is used as the bond wafer where the region to form the ion-implanted layer has a resistivity of 0.2 Ωcm or less, the ion-implanted layer is formed where the ion dose for forming the layer is 4×1016/cm2 or less, and the flattening heat treatment is performed in an atmosphere including HCl gas. Therefore, a method for manufacturing a bonded wafer having a low resistivity thin film (SOI layer) that contains dopant, such as boron, with high concentration according to the ion-implantation delamination method, where outward diffusion of dopant and suction due to oxidation can be inhibited to maintain low resistivity.
摘要翻译：一种用于制造接合晶片的方法，包括：在接合晶片中形成离子注入层，将接合晶片接合到基底晶片，在离子注入层分层接合晶片，以及在表面之后进行平坦化热处理分层，其中使用硅单晶晶片作为形成离子注入层的区域的电阻率为0.2Ω·米或更小的接合晶片，形成离子注入层，其中用于形成层的离子剂量为 4×10 16 / cm 2以下，扁平化热处理在含有HCl气体的气氛中进行。因此，根据离子注入脱层法，具有含有高掺杂剂等硼等掺杂剂的低电阻薄膜（SOI层）的接合晶片的制造方法，其中掺杂剂的向外扩散和由于氧化引起的抽吸可以被抑制以维持低电阻率。

4. 发明申请

US20120326268A1 SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING THE SAME, BONDED SOI WAFER AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：硅外延晶片，其制造方法，结合SOI晶片及其制造方法
公开(公告)号：US20120326268A1
公开(公告)日：2012-12-27
申请号：US13582614
申请日：2011-03-01
申请人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L29/06 , H01L21/20 , H01L21/762 , H01L29/02
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/76254 , H01L29/78603
摘要： A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle Φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle Φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×1019/cm3. Even when an epitaxial layer having a dopant concentration of 1×1019/cm3 or more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.
摘要翻译：一种硅外延片，其具有在硅单晶衬底的主表面上通过气相外延生长的硅外延层，其中所述硅单晶衬底的主表面相对于[100]轴以角度倾斜; 在（100）面的[011]方向或[0-1-1]方向上，在（100）面的[01-1]方向或[0-11]方向上的角度Φ处，角度和角度角度Φ小于10分钟，硅外延层的掺杂剂浓度为1×1019 / cm3以上。即使在硅单晶衬底的主表面上形成掺杂浓度为1×1019 / cm3以上的外延层，也抑制了外延层上的条状表面凹凸。

5. 发明授权

US08823130B2 Silicon epitaxial wafer, method for manufacturing the same, bonded SOI wafer and method for manufacturing the same 有权
标题翻译：硅外延晶片，其制造方法，接合SOI晶片及其制造方法
公开(公告)号：US08823130B2
公开(公告)日：2014-09-02
申请号：US13582614
申请日：2011-03-01
申请人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Masahiro Kato , Satoshi Oka , Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： H01L21/70 , H01L21/02 , H01L21/762 , H01L29/786
CPC分类号： H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/76254 , H01L29/78603
摘要： A silicon epitaxial wafer having a silicon epitaxial layer grown by vapor phase epitaxy on a main surface of a silicon single crystal substrate, wherein the main surface of the silicon single crystal substrate is tilted with respect to a [100] axis at an angle θ in a [011] direction or a [0-1-1] direction from a (100) plane and at an angle φ in a [01-1] direction or a [0-11] direction from the (100) plane, the angle θ and the angle φ are less than ten minutes, and a dopant concentration of the silicon epitaxial layer is equal to or more than 1×1019/cm3. Even when an epitaxial layer having a dopant concentration of 1×1019/cm3 or more is formed on the main surface of the silicon single crystal substrate, stripe-shaped surface irregularities on the epitaxial layer are inhibited.
摘要翻译：一种硅外延片，其具有在硅单晶衬底的主表面上通过气相外延生长的硅外延层，其中所述硅单晶衬底的主表面相对于[100]轴以角度倾斜; 在（011）方向或[0-1-1]方向上，以（100）在（100）平面的[01-1]方向或[0-11]方向上，角度＆amp; 和角度＆phgr 小于10分钟，硅外延层的掺杂浓度等于或大于1×1019 / cm3。即使在硅单晶衬底的主表面上形成掺杂浓度为1×1019 / cm3以上的外延层，也抑制了外延层上的条状表面凹凸。

6. 发明申请

US20110281420A1 METHOD FOR MANUFACTURING SOI WAFER 审中-公开
标题翻译： SOI WAFER制造方法
公开(公告)号：US20110281420A1
公开(公告)日：2011-11-17
申请号：US13145275
申请日：2010-01-08
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/301
CPC分类号： H01L21/76254 , H01L21/30608 , H01L21/31111
摘要： A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer.
摘要翻译：一种用于制造SOI晶片的方法，包括从其表面将气体离子注入接合晶片以形成离子注入层; 通过绝缘膜将接合晶片的离子注入表面接合到基底晶片的表面; 并在离子注入层分层接合晶片以制造SOI晶片。该方法还包括在接合晶片在离子注入层分层之前将接合的晶片浸入能够溶解绝缘体膜的液体中或将接合的晶片暴露于能够溶解绝缘膜的气体，使得绝缘膜位于接合晶片和基底晶片之间的位置从外圆周边缘朝向接合晶片的中心蚀刻。

7. 发明申请

US20110104870A1 METHOD FOR MANUFACTURING BONDED WAFER 有权
标题翻译：制造粘结波的方法
公开(公告)号：US20110104870A1
公开(公告)日：2011-05-05
申请号：US12866271
申请日：2009-02-17
申请人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
摘要翻译：一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

8. 发明申请

US20060185581A1 Method for producing a semiconductor wafer 审中-公开
标题翻译：半导体晶片的制造方法
公开(公告)号：US20060185581A1
公开(公告)日：2006-08-24
申请号：US11353046
申请日：2006-02-14
申请人： Hiroji Aga , Nobuhiko Noto , Kiyoshi Mitani
发明人： Hiroji Aga , Nobuhiko Noto , Kiyoshi Mitani
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B31/22 , C30B29/06 , C30B29/52
摘要： The present invention provides a method for producing a semiconductor wafer comprising at least steps of, forming a Si1-XGeX layer (0
摘要翻译：本发明提供一种用于制造半导体晶片的方法，该方法至少包括以下步骤：形成具有临界状态的Si 1-X 1 Ge x X 1层（0

9. 发明授权

US08097523B2 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US08097523B2
公开(公告)日：2012-01-17
申请号：US12866271
申请日：2009-02-17
申请人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
摘要翻译：一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

10. 发明申请

US20140097523A1 METHOD FOR MANUFACTURING BONDED WAFER AND BONDED SOI WAFER 有权
标题翻译：用于制造粘结波和粘结SOI波形的方法
公开(公告)号：US20140097523A1
公开(公告)日：2014-04-10
申请号：US14114959
申请日：2012-04-25
申请人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
发明人： Hiroji Aga , Isao Yokokawa , Nobuhiko Noto
IPC分类号： H01L21/762 , H01L29/02 , H01L21/265
CPC分类号： H01L29/02 , H01L21/265 , H01L21/26586 , H01L21/68764 , H01L21/68771 , H01L21/76254 , Y10S438/977
摘要： A method for manufacturing a bonded wafer includes: an ion implantation step of using a batch type ion implanter; a bonding step of bonding an ion implanted surface of a bond wafer to a surface of a base wafer directly or through an insulator film; and a delamination step of delaminating the bond wafer at an ion implanted layer, thereby manufacturing a bonded wafer having a thin film on the base wafer, wherein the ion implantation into the bond wafer carried out at the ion implantation step is divided into a plurality of processes, the bond wafer is rotated on its own axis a predetermined rotation angle after each ion implantation, and the next ion implantation is carried out at an arrangement position obtained by the rotation.
摘要翻译：制造接合晶片的方法包括：使用间歇型离子注入机的离子注入步骤; 键合步骤，将接合晶片的离子注入表面直接或通过绝缘膜粘合到基底晶片的表面; 以及在离子注入层分层接合晶片的分层步骤，由此在基底晶片上制造具有薄膜的接合晶片，其中在离子注入步骤中执行的接合晶片的离子注入被分成多个在每次离子注入之后，接合晶片在其自身的轴上旋转预定的旋转角度，并且在通过旋转获得的布置位置处执行下一个离子注入。

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