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1. 发明授权

US5442201A Semiconductor light emitting device with nitrogen doping 失效
标题翻译：具有氮掺杂的半导体发光器件
公开(公告)号：US5442201A
公开(公告)日：1995-08-15
申请号：US216278
申请日：1994-03-23
申请人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/00 , H01L33/30
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/305 , Y10S438/925
摘要： An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0
摘要翻译：由式（Al x Ga 1-x）y In 1-y P（0

2. 发明授权

US5442203A Semiconductor light emitting device having AlGaAsP light reflecting layers 失效
标题翻译：具有AlGaAsP光反射层的半导体发光器件
公开(公告)号：US5442203A
公开(公告)日：1995-08-15
申请号：US299084
申请日：1994-08-18
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/10 , H01L33/14 , H01L33/30 , H01S5/20 , H01S5/32 , H01S5/323 , H01S3/19 , H01L33/00
CPC分类号： H01L33/14 , H01L33/10 , H01S5/20 , H01S5/32308 , H01S5/2004 , H01S5/3211 , H01S5/32325
摘要： A semiconductor light emitting device has a light emitting layer portion comprising AlGaInP layers formed on a GaAs substrate. A light reflecting layer portion comprising alternately laminated layers with different refractive indices is provided between the GaAs substrate and the light emitting layer portion. The light reflecting layer portion comprises Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v layers (where: 0.ltoreq.w.ltoreq.1, 0
摘要翻译：半导体发光器件具有包含在GaAs衬底上形成的AlGaInP层的发光层部分。在GaAs衬底和发光层部分之间设置包括具有不同折射率的交替叠层的光反射层部分。光反射层部分包括AlwGa1-wAs1-vPv层（其中：0≤w≤1,0

3. 发明授权

US5600158A Semiconductor light emitting device with current spreading layer 失效
标题翻译：具有电流扩散层的半导体发光器件
公开(公告)号：US5600158A
公开(公告)日：1997-02-04
申请号：US514628
申请日：1995-08-14
申请人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
发明人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/14
摘要： A semiconductor light emitting device comprising an n-type GaAs substrate, a light emitting layer portion consisting of an AlGaInP double heterojunction structure formed on the substrate, and a p-type current spreading layer formed on the light emitting layer portion, wherein the p-type current spreading layer comprises an undoped current spreading layer and a heavily-doped current spreading layer formed on said undoped current spreading layer. With this construction, it is possible to achieve a stable control of carrier concentration in a p-type cladding layer, to prevent deterioration of the interface between the p-type cladding layer and an active layer and also to prevent crystallinty-deterioration of the active layer with the result that the emission intensity of the device can be increased to a considerable extent.
摘要翻译：一种半导体发光器件，包括n型GaAs衬底，由形成在衬底上的AlGaInP双异质结结构构成的发光层部分和形成在发光层部分上的p型电流扩散层，型电流扩展层包括未掺杂电流扩展层和形成在所述未掺杂电流扩展层上的重掺杂电流扩散层。通过这种结构，可以实现p型包覆层中的载流子浓度的稳定控制，以防止p型覆层与有源层之间的界面的劣化，并且防止活性物质的结晶劣化从而可以在相当程度上增加器件的发光强度。

4. 发明授权

US5597761A Semiconductor light emitting device and methods of manufacturing it 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US5597761A
公开(公告)日：1997-01-28
申请号：US402487
申请日：1995-03-10
申请人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Akio Nakamura , Takao Takenaka
IPC分类号： H01L21/205 , H01L33/00 , H01L33/30 , H01L21/208
CPC分类号： H01L33/30 , H01L33/0062 , H01L33/305 , Y10S438/925
摘要： An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (0
摘要翻译：由式（Al x Ga 1-x）y In 1-y P（0

5. 发明授权

US5739553A Algainp light-emitting device 失效
标题翻译：阿根廷发光装置
公开(公告)号：US5739553A
公开(公告)日：1998-04-14
申请号：US577961
申请日：1995-12-26
申请人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
发明人： Nobuhiko Noto , Keizo Adomi , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/30 , H01L33/14
摘要： The present invention provides an AlGaInP light-emitting device with a longer life and higher reliability. The AlGaInP light-emitting device comprises an n-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), an (Al.sub.0.15 Ga.sub.0.85).sub.0.51 In.sub.0.49 P active layer (about 0.6 .mu.m in thickness), a p-type (Al.sub.0.7 Ga.sub.0.3).sub.0.51 In.sub.0.49 P cladding layer (about 1 .mu.m in thickness), and a p-type current-spreading layer composed of either a p-type Al.sub.0.7 Ga.sub.0.3 As layer (about 3 .mu.m in thickness) or a p-type Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03 layer (about 3 .mu.m in thickness) and a p-type GaAs.sub.0.5 P.sub.0.5 layer (about 7 .mu.m in thickness), in sequence formed on an n-type GaAs substrate, and further an upper surface electrode mounted on the p-type GaAs.sub.0.5 P.sub.0.5 layer and a lower surface electrode mounted on the lower surface of the n-type GaAs substrate.
摘要翻译：本发明提供一种具有更长寿命和更高可靠性的AlGaInP发光器件。 AlGaInP发光器件包括n型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm），（Al0.15Ga0.85）0.51In0.49P有源层（约0.6 厚度为1μm），p型（Al0.7Ga0.3）0.51In0.49P包层（厚度约1μm）以及由p型Al0构成的p型电流扩展层。（厚约3μm）或p型Al0.7Ga0.3As0.97P0.03层（约3μm厚）和p型GaAs0.5P0.5层（约7μm） m），依次形成在n型GaAs衬底上，另外安装在p型GaAs0.5P0.5层上的上表面电极和安装在n型GaAs的下表面上的下表面电极基质。

6. 发明授权

US5444269A AlGaInP light emitting device 失效
标题翻译： AlGaInP发光器件
公开(公告)号：US5444269A
公开(公告)日：1995-08-22
申请号：US251370
申请日：1994-05-31
申请人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
发明人： Keizo Adomi , Nobuhiko Noto , Takao Takenaka
IPC分类号： H01L33/14 , H01L33/30 , H01L33/00
CPC分类号： H01L33/14
摘要： An AlGaInP double heterojunction structure or an AlGaInP single heterojunction structure is formed on a first conductivity-type GaAs substrate, and then a layer made of a second conductivity-type Al.sub.w Ga.sub.1-w As.sub.1-v P.sub.v mixed crystal (Al.sub.0.7 Ga.sub.0.3 As.sub.0.97 P.sub.0.03, for example) which has the bandgap energy larger than the energy of photon emitted from the active layer of said light emitting layer portion, and has good lattice-matching with (Al.sub.B Ga.sub.1-B).sub.0.51 In.sub.0.49 P mixed crystal (layer) constituting said light emitting layer portion, is formed as a current spreading layer on top of said light emitting layer portion. Here, w and v are in the range of 0.45.ltoreq.w
摘要翻译：在第一导电型GaAs衬底上形成AlGaInP双异质结结构或AlGaInP单异质结结构，然后形成由第二导电型AlwGa1-wAs1-vPv混晶（Al0.7Ga0.3As0.97P0.03 具有比从所述发光层部分的有源层发射的光子能量大的带隙能量，并且与构成所述发光层部分的（AlBGa1-B）0.51In0.49P混晶（层）具有良好的晶格匹配发光层部分形成为在所述发光层部分的顶部上的电流扩散层。这里，w和v分别在0.45

7. 发明授权

US5209811A Method for heat-treating gallium arsenide monocrystals 失效
标题翻译：砷化镓单晶的热处理方法
公开(公告)号：US5209811A
公开(公告)日：1993-05-11
申请号：US810362
申请日：1991-12-18
申请人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
发明人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
IPC分类号： C30B33/00
CPC分类号： C30B33/00 , C30B29/42
摘要： A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment:(i) heating the monocrystal at a temperature between 1050.degree. C. and 1200.degree. C. for a predetermined time length, and cooling the monocrystal quickly; and(ii) heating the monocrystal at a temperature between 750.degree. C. and 950.degree. C. for a predetermined time length, and cooling the monocrystal quickly.
摘要翻译：一种具有低碳浓度的铟掺杂的无位错的砷化镓单晶的热处理方法，其在液体封装的切克劳斯基法中生长，包括两步热处理：（i）在1050℃之间的温度下加热单晶 C.和1200℃预定的时间长度，并快速冷却单晶; 和（ii）在750℃至950℃的温度下加热单晶体预定的时间长度，并快速冷却单晶。

8. 发明授权

US5386118A Method and apparatus for determination of interstitial oxygen concentration in silicon single crystal 失效
标题翻译：测定硅单晶间隙氧浓度的方法和装置
公开(公告)号：US5386118A
公开(公告)日：1995-01-31
申请号：US38694
申请日：1993-03-29
申请人： Yutaka Kitagawara , Hiroshi Kubota , Masaro Tamatsuka , Takao Takenaka , Kazuhisa Takamizawa
发明人： Yutaka Kitagawara , Hiroshi Kubota , Masaro Tamatsuka , Takao Takenaka , Kazuhisa Takamizawa
IPC分类号： C30B33/00 , G01N21/35
CPC分类号： C30B29/06 , C30B33/00 , G01N21/35 , G01N21/3563 , G01N2021/3595
摘要： A method and apparatus disclosed by this invention allows determination of the interstitial oxygen concentration in a silicon single crystal to be effected stably and accurately without being appreciably affected by change of the temperature of a sample under test. The interstitial oxygen concentration in the silicon single crystal is determined on the basis of the value of:(Light absorption coefficient).times.[1+a.times.(peak half width)]or the value of:(Light absorption coefficient).times.[1+b.times.(peak area)/ (peak height)](wherein a or b stands for a parameter whose value depends on the conditions for determination or the apparatus for determination and should be empirically fixed with respect to specific conditions of determination or the apparatus used therefor) concerning an interstitial oxygen absorption peak at 1106 cm.sup.-1 obtained by means of an infrared spectrophotometer.
摘要翻译：通过本发明公开的方法和装置允许稳定且准确地实现硅单晶中的间隙氧浓度的确定，而不受显着受试验样品的温度变化的影响。基于以下的值确定硅单晶中的间隙氧浓度：（光吸收系数）×[1 + ax（峰值半峰值）]或者：（光吸收系数）×[1 + bx （峰面积）/（峰高）]（其中a或b表示其值取决于确定条件的参数或用于确定的装置，并且应根据具体的确定条件或其使用的装置经验地确定）涉及通过红外分光光度计获得的在1106cm -1处的间隙氧吸收峰。

9. 发明授权

US5362683A Method of making epitaxial wafers 失效
标题翻译：制造外延片的方法
公开(公告)号：US5362683A
公开(公告)日：1994-11-08
申请号：US205558
申请日：1994-03-04
申请人： Takao Takenaka , Masahisa Endo , Masato Yamada
发明人： Takao Takenaka , Masahisa Endo , Masato Yamada
IPC分类号： C30B19/00 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/302
CPC分类号： H01L21/304 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/02546 , H01L21/02625 , H01L21/02628 , Y10S117/915
摘要： To manufacture epitaxial wafers with a smaller amount of semiconductor crystals at a lower cost by means of an efficient epitaxial growth process. An epitaxial wafer is made by forming, by means of epitaxial growth, GaAlAs layers with identical structures on both sides of a GaAs substrate wafer with the crystal plane orientation of {100}. The epitaxial wafer is then divided in the GaAs substrate wafer portion into two pieces to obtain two epitaxial wafers. To perform the epitaxial growth process, a plurality of GaAs substrate wafers are held at their edges and then the GaAs substrate wafers are placed in a Ga solution at prescribed spatial intervals. To divide the epitaxial wafer in the GaAs substrate portion into two pieces, the substrate wafer portion is cut parallel to the main surface. Or, the GaAs substrate wafer can also be removed by means of etching while the epitaxial wafer is rotated at a high speed in the etching solution.
摘要翻译：通过有效的外延生长工艺以更低的成本制造具有更少量的半导体晶体的外延晶片。通过外延生长，通过在晶体平面取向为{100}的GaAs衬底晶片的两侧上形成具有相同结构的GaAlAs层来制造外延晶片。然后将外延晶片在GaAs衬底晶片部分中分成两片，以获得两个外延晶片。为了进行外延生长处理，将多个GaAs衬底晶片保持在其边缘，然后将GaAs衬底晶片以规定的空间间隔放置在Ga溶液中。为了将GaAs衬底部分中的外延晶片分成两片，平行于主表面切割衬底晶片部分。或者，也可以通过蚀刻去除GaAs衬底晶片，同时外延晶片在蚀刻溶液中以高速旋转。

10. 发明授权

US5228927A Method for heat-treating gallium arsenide monocrystals 失效
公开(公告)号：US5228927A
公开(公告)日：1993-07-20
申请号：US677036
申请日：1991-03-29
申请人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
发明人： Yutaka Kitagawara , Susumu Kuwahara , Takao Takenaka
IPC分类号： C30B33/00
CPC分类号： C30B33/00 , C30B29/42 , Y10S148/003 , Y10S148/024 , Y10S148/056
摘要： A heat-treating method for an indium-doped dislocation-free gallium arsenide monocrystal having a low carbon concentration and grown in the Liquid Encapsulated Czochralski method, comprising a two-step heat treatment:(i) heating the monocrystal at a temperature between 1050.degree. C. and 1200.degree. C. for a predetermined time length, and cooling the monocrystal quickly; and(ii) heating the monocrystal at a temperature between 750.degree. C. and 950.degree. C. for a predetermined time length, and cooling the monocrystal quickly.

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