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    • 1. 发明授权
    • Configurable NAND/NOR element
    • 可配置NAND / NOR元件
    • US5592107A
    • 1997-01-07
    • US497491
    • 1995-06-30
    • Mark W. McDermottJohn E. Turner
    • Mark W. McDermottJohn E. Turner
    • H03K19/173H03K19/0948
    • H03K19/1736
    • A configurable NAND/NOR logic element is used, in an exemplary embodiment, in an array of spare gates included in a processor or other integrated circuit. The NAND/NOR logic element (FIG. 3, 50) is configurable as either a NAND or a NOR gate by a C (configuration) input (that can be metal configurable as either asserted or deasserted). C inputs control p- and n-channel transistors. Depending on whether the C input is deasserted or asserted, respective internal nodes are shorted to effect the selected configuration. Specifically, deasserting C provides the NAND configuration, while asserting C provides the NOR configuration. In an alternative embodiment, the NAND/NOR logic element can be used in a full adder to provide the carry output.
    • 在示例性实施例中,在包括在处理器或其他集成电路中的备用阵列阵列中使用可配置NAND / NOR逻辑元件。 NAND / NOR逻辑元件(图3,50)可通过C(配置)输入(可以被金属可配置为被断言或无效)配置为NAND或NOR门。 C输入控制p沟道晶体管和n沟道晶体管。 取决于C输入是否被断言或断言,相应的内部节点被短路以实现所选择的配置。 具体来说,解锁C提供NAND配置,而断言C提供NOR配置。 在替代实施例中,NAND / NOR逻辑元件可用于全加器以提供进位输出。
    • 2. 发明授权
    • Configurable XNOR/XOR element
    • 可配置的XNOR / XOR元素
    • US5568067A
    • 1996-10-22
    • US497007
    • 1995-06-30
    • Mark W. McDermottJohn E. Turner
    • Mark W. McDermottJohn E. Turner
    • H03K19/173H03K19/21H03K19/094
    • H03K19/215H03K19/1736
    • A configurable XNOR/XOR logic element is used, in an exemplary embodiment, in an array of spare gates included in a processor or other integrated circuit. The XNOR/XOR logic element (FIG. 4, 60) is configurable as either an XNOR or an XOR gate by a C (configuration) input (that can be metal configurable as either asserted or deasserted). Inverted and noninverted C inputs control two coupling circuits: (a) coupling circuit C10 includes p-transistors C11, C12, C13, and C14, and (b) coupling circuit C20 includes n-transistors C21, C22, C23, and C24. Depending on whether the C input is deasserted or asserted (and the inverted C input is correspondingly asserted or deasserted), these configuration transistors series or cross couple parallel stacked p- and n-transistors that receive inverted and noninverted A and B inputs to effect the selected configuration. Specifically, deasserting C provides the XOR configuration, while asserting C provides the XNOR configuration. In an alternative embodiment, the XNOR/XOR logic element can be used in a full adder to provide the sum output.
    • 在示例性实施例中,在包括在处理器或其他集成电路中的备用阵列阵列中使用可配置的XNOR / XOR逻辑元件。 XNOR / XOR逻辑元件(图4,60)可以通过C(配置)输入(可以被金属可配置为被断言或无效)来配置为XOR或XOR门。 反相和非反相C输入控制两个耦合电路:(a)耦合电路C10包括p晶体管C11,C12,C13和C14,(b)耦合电路C20包括n晶体管C21,C22,C23和C24。 取决于C输入是否被断言或置为有效(并且反相C输入被相应地置为或无效),这些配置晶体管串联或交叉耦合并联堆叠的p型和n型晶体管,其接收反相和非反相的A和B输入以实现 选择配置。 具体来说,取消分配C提供XOR配置,而断言C提供XNOR配置。 在替代实施例中,XNOR / XOR逻辑元件可用于全加器以提供和输出。
    • 6. 发明授权
    • Programmable data security circuit for programmable logic device
    • 可编程逻辑器件的可编程数据安全电路
    • US4852044A
    • 1989-07-25
    • US236348
    • 1988-08-22
    • John E. TurnerJerome E. Liebler
    • John E. TurnerJerome E. Liebler
    • H03K19/177
    • H03K19/17768H03K19/17704H03K19/1778
    • An architecture security fuse circuit is disclosed for securing the architecture of a configurable programmable logic device. The storage element of the circuit is a floating gate transistor cell. Data stored in the cell is determined by the amount of charge trapped within the oxide-isolated polysilicon floating gate region. The security fuse is initialized (erased) during device fabrication to allow access to device architectural data. Such initialization is accomplished by a technique that the device user cannot duplicate, via an extra probe pad accessible only during wafer probe. To deter the effects of floating gate charge loss which may occur during subsequent fabrication steps, the fuse circuit is adapted to provide a reduced memory cell read voltage, thus providing greater margin against thermally defeating the security fuse. A regenerative feature is provided to strengthen the erased cell during every device "clear" cycle. Once the security fuse is programmed, the data defining the device architecture may not be interrogated or altered, and the memory cell is unchanged by the regenerative feature.
    • 公开了用于保护可配置可编程逻辑器件的架构的架构安全熔丝电路。 电路的存储元件是浮栅晶体管单元。 存储在单元中的数据由在氧化物隔离多晶硅浮动栅极区域内捕获的电荷量确定。 在设备制造期间,安全保险丝被初始化(擦除),以允许访问设备架构数据。 这种初始化是通过一种技术实现的,该技术是通过仅在晶片探针期间可访问的额外的探针焊盘才能复制设备。 为了阻止在随后的制造步骤期间可能发生的浮栅电荷损失的影响,熔丝电路适于提供减小的存储单元读取电压,从而提供更大的抵抗热破坏安全保险丝的裕度。 提供再生特征以在每个器件“清除”周期期间加强擦除的单元。 一旦安全保险丝被编程,定义设备架构的数据可能不被询问或改变,并且存储器单元由再生特征保持不变。