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1. 发明申请

US20090280595A1 Process for assembling wafers by means of molecular adhesion 失效
标题翻译：通过分子粘附装配晶片的方法
公开(公告)号：US20090280595A1
公开(公告)日：2009-11-12
申请号：US12229248
申请日：2008-08-21
申请人： Marcel Broekaart , Bernard Aspar , Thierry Barge , Chrystelle L. Blanchard
发明人： Marcel Broekaart , Bernard Aspar , Thierry Barge , Chrystelle L. Blanchard
IPC分类号： H01L21/50 , H01L31/00
CPC分类号： H01L21/76256 , C03C27/00 , H01L21/187 , H01L25/0657 , H01L25/50 , H01L27/146 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a process of bonding by molecular adhesion of two layers, such as wafers of semiconductor material, wherein propagation of a first bonding wave is initiated from a pressure point applied to at least one of the two layers, and wherein the first bonding wave step is followed by propagating a second bonding wave over an area, for example, in the vicinity of the pressure point. Propagation of the second bonding wave may be obtained through the interposing of a separation element between the two wafers and the withdrawal of the element, for example, after the beginning of the first bonding wave propagation.
摘要翻译：本发明涉及通过两层分子粘合的方法，例如半导体材料晶片，其中从施加到两层中的至少一层的压力点开始第一结合波的传播，并且其中第一键合随后在例如压力点附近的区域上传播第二结合波。可以通过在两个晶片之间插入分离元件并且例如在第一结合波传播开始之后元件的抽出来获得第二结合波的传播。

2. 发明授权

US08232130B2 Process for assembling wafers by means of molecular adhesion 失效
标题翻译：通过分子粘附装配晶片的方法
公开(公告)号：US08232130B2
公开(公告)日：2012-07-31
申请号：US12229248
申请日：2008-08-21
申请人： Marcel Broekaart , Bernard Aspar , Thierry Barge , Chrystelle L. Blanchard
发明人： Marcel Broekaart , Bernard Aspar , Thierry Barge , Chrystelle L. Blanchard
IPC分类号： H01L21/50 , H01L31/00
CPC分类号： H01L21/76256 , C03C27/00 , H01L21/187 , H01L25/0657 , H01L25/50 , H01L27/146 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to a process of bonding by molecular adhesion of two layers, such as wafers of semiconductor material, wherein propagation of a first bonding wave is initiated from a pressure point applied to at least one of the two layers, and wherein the first bonding wave step is followed by propagating a second bonding wave over an area, for example, in the vicinity of the pressure point. Propagation of the second bonding wave may be obtained through the interposing of a separation element between the two wafers and the withdrawal of the element, for example, after the beginning of the first bonding wave propagation.
摘要翻译：本发明涉及通过两层分子粘合的方法，例如半导体材料晶片，其中从施加到两层中的至少一层的压力点开始第一结合波的传播，并且其中第一键合随后在例如压力点附近的区域上传播第二结合波。可以通过在两个晶片之间插入分离元件并且例如在第一结合波传播开始之后元件的抽出来获得第二结合波的传播。

3. 发明申请

US20110183495A1 ANNEALING PROCESS FOR ANNEALING A STRUCTURE 有权
标题翻译：退火结构退火工艺
公开(公告)号：US20110183495A1
公开(公告)日：2011-07-28
申请号：US13011267
申请日：2011-01-21
申请人： Nicolas Sousbie , Bernard Aspar , Thierry Barge , Chrystelle Lagahe Blanchard
发明人： Nicolas Sousbie , Bernard Aspar , Thierry Barge , Chrystelle Lagahe Blanchard
IPC分类号： H01L21/762
CPC分类号： H01L21/2007 , H01L21/187
摘要： The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.
摘要翻译：本发明涉及退火包括至少一个晶片的结构的方法，退火工艺包括在氧化气氛中进行结构的第一退火，同时保持结构与第一位置的保持器接触以氧化所述结构的暴露表面的至少一部分将所述保持器上的结构移动到其中暴露所述结构的非氧化区域的第二位置，并且在保持所述结构的同时在所述结构的氧化气氛中进行所述结构的第二退火第二个位置。该过程在结构上提供氧化物层。

4. 发明授权

US06335258B1 Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element 有权
标题翻译：在支撑体上制造薄膜的方法和包括在热处理之前的附加变薄阶段的所得结构使微孔分离衬底元件
公开(公告)号：US06335258B1
公开(公告)日：2002-01-01
申请号：US09284801
申请日：1999-06-18
申请人： Bernard Aspar , Michel Bruel , Thierry Barge
发明人： Bernard Aspar , Michel Bruel , Thierry Barge
IPC分类号： H01L2176
CPC分类号： H01L21/304 , H01L21/76254 , Y10S438/977
摘要： The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic implantation being to create a layer of micro-cavities in the substrate, a stage to bond the substrate to a support element using close contact and a heat treatment stage intended to bring the layer of micro-cavities to a temperature that is high enough to cause a split along said layer. At least one of said elements, substrate or support, is thinned before the heat treatment stage in order to maintain the close contact between the substrate and the support despite the stresses caused in the elements and resulting from the difference in their thermal dilation coefficients.
摘要翻译：本发明涉及一种用于支撑体上的薄膜的制造方法，该方法包括离子注入阶段以便在衬底中划定薄膜，离子注入的目的是在衬底中产生一个微腔层使用紧密接触和热处理阶段将衬底粘合到支撑元件上的阶段，该阶段旨在使微孔层达到足以使所述层分裂的温度。所述元件，衬底或支撑体中的至少一个在热处理阶段之前变薄，以便尽管在元件中产生的应力和由它们的热膨胀系数的差异导致的基板和支撑件之间的紧密接触。

5. 发明授权

US08158487B2 Annealing process for annealing a structure 有权
标题翻译：退火结构的退火工艺
公开(公告)号：US08158487B2
公开(公告)日：2012-04-17
申请号：US13011267
申请日：2011-01-21
申请人： Nicolas Sousbie , Bernard Aspar , Thierry Barge , Chrystelle Lagahe Blanchard
发明人： Nicolas Sousbie , Bernard Aspar , Thierry Barge , Chrystelle Lagahe Blanchard
IPC分类号： H01L21/76 , H01L21/31
CPC分类号： H01L21/2007 , H01L21/187
摘要： The invention relates to a process for annealing a structure that includes at least one wafer, with the annealing process including conducting a first annealing of the structure in an oxidizing atmosphere while holding the structure in contact with a holder in a first position in order to oxidize at least portion of the exposed surface of the structure, shifting the structure on the holder into a second position in which non-oxidized regions of the structure are exposed, and conducting a second annealing of the structure in an oxidizing atmosphere while holding the structure in the second position. The process provides an oxide layer on the structure.
摘要翻译：本发明涉及退火包括至少一个晶片的结构的方法，退火工艺包括在氧化气氛中进行结构的第一退火，同时保持结构与第一位置的保持器接触以氧化所述结构的暴露表面的至少一部分将所述保持器上的结构移动到其中暴露所述结构的非氧化区域的第二位置，并且在保持所述结构的同时在所述结构的氧化气氛中进行所述结构的第二退火第二个位置。该过程在结构上提供氧化物层。

6. 发明授权

US06403450B1 Heat treatment method for semiconductor substrates 有权
标题翻译：半导体基板的热处理方法
公开(公告)号：US06403450B1
公开(公告)日：2002-06-11
申请号：US09445314
申请日：2000-02-29
申请人： Christophe Maleville , Thierry Barge , Bernard Aspar , Hubert Moriceau , André-Jacques Auberton-Herve
发明人： Christophe Maleville , Thierry Barge , Bernard Aspar , Hubert Moriceau , André-Jacques Auberton-Herve
IPC分类号： H01L21322
CPC分类号： H01L21/3221 , H01L21/76254
摘要： The invention concerns a method for treating, a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming, an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4).
摘要翻译：本发明涉及一种用于处理在其至少一个表面上包含半导体层（4）的衬底的方法。所述方法包括用于退火衬底的步骤和在退火步骤结束之前在半导体层（4）表面形成氧化物层（6）的步骤，保护半导体的剩余部分层（4）。

7. 发明申请

US20130012024A1 STRUCTURE FOR MICROELECTRONICS AND MICROSYSTEM AND MANUFACTURING PROCESS 审中-公开
标题翻译：微电子与微结构与制造工艺的结构
公开(公告)号：US20130012024A1
公开(公告)日：2013-01-10
申请号：US13618697
申请日：2012-09-14
申请人： Bernard Aspar
发明人： Bernard Aspar
IPC分类号： H01L21/302
CPC分类号： H01L21/7624 , B81C1/00595 , H01L21/76256 , H01L21/764
摘要： A process for making cavities in a multilayer structure by providing a multilayer structure that includes a surface layer, a planar support substrate and a buried layer between the layer and the support substrate, wherein the buried layer comprises areas of first and second materials with the first material having a higher etching rate than the second material; producing an opening in the surface layer that extends to the area(s) of the first material of the buried layer; and etching the first material to form at least one cavity in the buried layer.
摘要翻译：一种通过提供包括表面层，平面支撑衬底和层与支撑衬底之间的掩埋层的多层结构来制造多层结构中的空穴的方法，其中所述掩埋层包括第一和第二材料的区域，所述第一和第二材料具有第一具有比第二材料更高的蚀刻速率的材料; 在所述表层中产生延伸到所述掩埋层的第一材料的区域的开口; 并蚀刻所述第一材料以在所述掩埋层中形成至少一个空腔。

8. 发明授权

US08329048B2 Method for trimming a structure obtained by the assembly of two plates 有权
标题翻译：用于修整通过组装两个板获得的结构的方法
公开(公告)号：US08329048B2
公开(公告)日：2012-12-11
申请号：US11722115
申请日：2005-12-22
申请人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
发明人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
IPC分类号： B23B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译：一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一晶片，其中修整涉及第一晶片。该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

9. 发明授权

US07902038B2 Detachable substrate with controlled mechanical strength and method of producing same 有权
标题翻译：具有受控机械强度的可分离衬底及其制造方法
公开(公告)号：US07902038B2
公开(公告)日：2011-03-08
申请号：US10474984
申请日：2002-04-11
申请人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac , Bruno Ghyselen
发明人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac , Bruno Ghyselen
IPC分类号： H01L23/58
CPC分类号： B81C99/008 , H01L21/76254 , Y10S438/958
摘要： The invention relates to a method for production of a detachable substrate, comprising a method step for the production of an interface by means of fixing, using molecular adhesion, one face of a layer on one face of a substrate, in which, before fixing, a treatment stage for at least one of said faces is provided, rendering the mechanical hold at the interface at such a controlled level to be compatible with a subsequent detachment.
摘要翻译：本发明涉及一种可拆卸基板的制造方法，其特征在于，包括：通过使用分子粘合固定，在基板的一个面上的一个面的固定来制造界面的方法步骤，提供了用于至少一个所述面部的处理台，使得在该受控水平处的界面处的机械保持与随后的分离兼容。

10. 发明授权

US07713369B2 Detachable substrate or detachable structure and method for the production thereof 有权
标题翻译：可拆卸基板或可拆卸结构及其制造方法
公开(公告)号：US07713369B2
公开(公告)日：2010-05-11
申请号：US10468223
申请日：2002-04-11
申请人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
发明人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
IPC分类号： B32B38/10
CPC分类号： H01L21/7813 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L2221/68318 , H01L2221/68359 , H01L2221/68363 , H01L2924/19041 , Y10T156/11
摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.
摘要翻译：本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于所述界面以至少提供至少具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

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