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1. 发明申请

US20130012024A1 STRUCTURE FOR MICROELECTRONICS AND MICROSYSTEM AND MANUFACTURING PROCESS 审中-公开
标题翻译：微电子与微结构与制造工艺的结构
公开(公告)号：US20130012024A1
公开(公告)日：2013-01-10
申请号：US13618697
申请日：2012-09-14
申请人： Bernard Aspar
发明人： Bernard Aspar
IPC分类号： H01L21/302
CPC分类号： H01L21/7624 , B81C1/00595 , H01L21/76256 , H01L21/764
摘要： A process for making cavities in a multilayer structure by providing a multilayer structure that includes a surface layer, a planar support substrate and a buried layer between the layer and the support substrate, wherein the buried layer comprises areas of first and second materials with the first material having a higher etching rate than the second material; producing an opening in the surface layer that extends to the area(s) of the first material of the buried layer; and etching the first material to form at least one cavity in the buried layer.
摘要翻译：一种通过提供包括表面层，平面支撑衬底和层与支撑衬底之间的掩埋层的多层结构来制造多层结构中的空穴的方法，其中所述掩埋层包括第一和第二材料的区域，所述第一和第二材料具有第一具有比第二材料更高的蚀刻速率的材料; 在所述表层中产生延伸到所述掩埋层的第一材料的区域的开口; 并蚀刻所述第一材料以在所述掩埋层中形成至少一个空腔。

2. 发明授权

US08329048B2 Method for trimming a structure obtained by the assembly of two plates 有权
标题翻译：用于修整通过组装两个板获得的结构的方法
公开(公告)号：US08329048B2
公开(公告)日：2012-12-11
申请号：US11722115
申请日：2005-12-22
申请人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
发明人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
IPC分类号： B23B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译：一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一晶片，其中修整涉及第一晶片。该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

3. 发明授权

US07902038B2 Detachable substrate with controlled mechanical strength and method of producing same 有权
标题翻译：具有受控机械强度的可分离衬底及其制造方法
公开(公告)号：US07902038B2
公开(公告)日：2011-03-08
申请号：US10474984
申请日：2002-04-11
申请人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac , Bruno Ghyselen
发明人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac , Bruno Ghyselen
IPC分类号： H01L23/58
CPC分类号： B81C99/008 , H01L21/76254 , Y10S438/958
摘要： The invention relates to a method for production of a detachable substrate, comprising a method step for the production of an interface by means of fixing, using molecular adhesion, one face of a layer on one face of a substrate, in which, before fixing, a treatment stage for at least one of said faces is provided, rendering the mechanical hold at the interface at such a controlled level to be compatible with a subsequent detachment.
摘要翻译：本发明涉及一种可拆卸基板的制造方法，其特征在于，包括：通过使用分子粘合固定，在基板的一个面上的一个面的固定来制造界面的方法步骤，提供了用于至少一个所述面部的处理台，使得在该受控水平处的界面处的机械保持与随后的分离兼容。

4. 发明授权

US07713369B2 Detachable substrate or detachable structure and method for the production thereof 有权
标题翻译：可拆卸基板或可拆卸结构及其制造方法
公开(公告)号：US07713369B2
公开(公告)日：2010-05-11
申请号：US10468223
申请日：2002-04-11
申请人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
发明人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
IPC分类号： B32B38/10
CPC分类号： H01L21/7813 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L2221/68318 , H01L2221/68359 , H01L2221/68363 , H01L2924/19041 , Y10T156/11
摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.
摘要翻译：本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于所述界面以至少提供至少具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

5. 发明授权

US07498234B2 Method of producing a thin layer of semiconductor material 有权
标题翻译：制造半导体材料薄层的方法
公开(公告)号：US07498234B2
公开(公告)日：2009-03-03
申请号：US11327906
申请日：2006-01-09
申请人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
发明人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
IPC分类号： H01L21/762
CPC分类号： G03F7/70541 , H01L21/304 , H01L21/76251 , H01L21/76254 , H01L2221/68359 , H01L2221/68363 , Y10S438/977 , Y10T428/24612
摘要： The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.
摘要翻译：本发明涉及一种生产半导体材料薄层的方法，包括：通过半导体晶片的平面（2）注入离子以产生微腔层的步骤，离子剂量在为了避免在平坦表面上形成水泡，为了实现微腔的聚结，热处理步骤可能是在薄层（6）中形成至少一个电子部件（5）的步骤，分离步骤将薄层（6）与晶片的其余部分（7）分开。

6. 发明申请

US20070072393A1 Method for preparing and assembling substrates 审中-公开
标题翻译：制备和组装基材的方法
公开(公告)号：US20070072393A1
公开(公告)日：2007-03-29
申请号：US10574798
申请日：2004-10-14
申请人： Bernard Aspar , Chrystelle Lagahe-Blanchard
发明人： Bernard Aspar , Chrystelle Lagahe-Blanchard
IPC分类号： H01L21/30 , H01L21/00 , H01L21/46
CPC分类号： H01L21/304 , H01L21/76251 , H01L21/76254 , H01L21/76256
摘要： A method for assembling a first and a second wafer of material, including routing at least the first wafer and assembling the first and second wafer.
摘要翻译：一种用于组装第一和第二材料晶片的方法，包括至少布置第一晶片并组装第一和第二晶片。

7. 发明申请

US20060281212A1 Stacked structure and production method thereof 有权
标题翻译：堆叠结构及其制造方法
公开(公告)号：US20060281212A1
公开(公告)日：2006-12-14
申请号：US10565621
申请日：2004-07-15
申请人： Hubert Moriceau , Bernard Aspar , Jacques Margail
发明人： Hubert Moriceau , Bernard Aspar , Jacques Margail
IPC分类号： H01L21/00
CPC分类号： B81B3/001 , B81C2201/112 , H01L21/76251 , H01L21/76256
摘要： The invention relates to a method of producing a stacked structure. The inventive method comprises the following steps consisting in: a) using a first plate (1) which is, for example, made from silicon, and a second plate (5) which is also, for example, made from silicon, such that at least one of said first (1) and second (5) plates has, at least in part, a surface (2; 7) that cannot bond to the other plate; b) providing a surface layer (3; 8), which is, for example, made from silicon oxide, on at least one part of the surface (2) of the first plate and/or the surface (7) of the second plate (5); and c) bonding the two plates (1; 5) to one another. The aforementioned bonding incompatibility can, for example, result from the physicochemical nature of the surface or of a coating applied thereto, or from a roughness value (r′2, r′7) which is greater than a predetermined threshold. The invention also relates to a stacked structure produced using the inventive method.
摘要翻译：本发明涉及一种堆叠结构的制造方法。本发明的方法包括以下步骤：a）使用例如由硅制成的第一板（1）和例如由硅制成的第二板（5），使得在至少部分地，所述第一（1）和第二（5）板中的至少一个具有不能结合到另一个板的表面（2; 7） b）在第一板的表面（2）和/或第二板的表面（7）的至少一部分上提供例如由氧化硅制成的表面层（3; 8）（5）; 和c）将两个板（1; 5）彼此粘合。上述粘合不相容性例如可以由表面或施加于其上的涂层的物理化学性质或由粗糙度值（r'2，r'7 >）大于预定阈值。本发明还涉及使用本发明方法制造的堆叠结构。

8. 发明申请

US20060115961A1 Method of producing a thin layer of semiconductor material 有权
标题翻译：制造半导体材料薄层的方法
公开(公告)号：US20060115961A1
公开(公告)日：2006-06-01
申请号：US11327906
申请日：2006-01-09
申请人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
发明人： Bernard Aspar , Michel Bruel , Thierry Poumeyrol
IPC分类号： H01L21/30
CPC分类号： G03F7/70541 , H01L21/304 , H01L21/76251 , H01L21/76254 , H01L2221/68359 , H01L2221/68363 , Y10S438/977 , Y10T428/24612
摘要： The invention relates to a method of producing a thin layer of semiconductor material including a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face, a thermal treatment step in order to achieve coalescence of the microcavities possibly, a step of creating at least one electronic component (5) in the thin layer (6), a separation step of separating the thin layer (6) from the rest (7) of the wafer.
摘要翻译：本发明涉及一种制造半导体材料薄层的方法，其包括通过半导体晶片的平面（2）注入离子以产生微腔层的步骤，离子剂量按照特定范围在特定范围内为了避免在平坦面上形成水泡，热处理步骤可以实现微腔的聚结，在薄层（6）中形成至少一个电子部件（5）的步骤，分离步骤来自晶片的其余部分（7）的薄层（6）。

9. 发明申请

US20060019476A1 Method for making a detachable semiconductor substrate and for obtaining a semiconductor element 有权
标题翻译：制造可分离半导体衬底并获得半导体元件的方法
公开(公告)号：US20060019476A1
公开(公告)日：2006-01-26
申请号：US10530640
申请日：2003-10-03
申请人： Chrystelle Lagahe , Bernard Aspar , Aurelie Beaumont
发明人： Chrystelle Lagahe , Bernard Aspar , Aurelie Beaumont
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： The invention concerns a method for forming a semiconductor substrate that can be dismantled, comprising the following steps: introduction of gaseous species in the substrate (1) according to conditions enabling the constitution of an embrittled layer by the presence in said layer of micro-cavities and/or micro-bubbles, a thin layer of semiconductor material thus being delimited between the embrittled layer and one face (2) of the substrate, thermal treatment of the substrate to increase the brittleness level of the embrittled layer, said thermal treatment being continued until the appearance of local deformations on said face (2) of the substrate (1) in the form of blisters but without generating exfoliations of the thin layer during this step and during the continuation of the method, epitaxy of semiconductor material (6) on said face of the substrate to provide at least one epitaxial layer on said thin film.
摘要翻译：本发明涉及一种用于形成可以拆卸的半导体衬底的方法，包括以下步骤：根据能够构成脆化层的条件在基底（1）中引入气态物质，通过存在于所述微孔腔和/或微气泡，因此薄层的半导体材料被限定在脆化层和基底的一个面（2）之间，热处理基底以增加脆化层的脆性水平，所述热处理继续直到在该步骤期间在泡罩形式的基底（1）的所述面（2）上出现局部变形，但在该步骤期间没有产生薄层的剥落，并且在该方法的继续期间，半导体材料（6）的外延所述衬底的所述表面在所述薄膜上提供至少一个外延层。

10. 发明申请

US20050158634A1 Photolithography mask comprising absorber/phase-shifter elements 审中-公开
标题翻译：包括吸收体/移相元件的光刻掩模
公开(公告)号：US20050158634A1
公开(公告)日：2005-07-21
申请号：US10513612
申请日：2003-05-06
申请人： Philippe Thony , Bernard Aspar , Gilles Fanget
发明人： Philippe Thony , Bernard Aspar , Gilles Fanget
IPC分类号： G03F1/00 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G03F1/26 , G03F1/48 , G03F1/62
摘要： This invention relates to an insolation mask including a transparent substrate (100) and at least one absorber/phase shifter element (112) embedded in the substrate, so as to form a monolithic assembly with the substrate. Application to photolithography.
摘要翻译：本发明涉及一种包括透明基板（100）和至少一个嵌入在基板内的吸收/移相元件（112）的日照掩模，以便与该基板形成一个单片组件。应用于光刻。

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