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1. 发明授权

US08049224B2 Process for transferring a layer of strained semiconductor material 有权
标题翻译：用于转移应变半导体材料层的工艺
公开(公告)号：US08049224B2
公开(公告)日：2011-11-01
申请号：US12862471
申请日：2010-08-24
申请人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
发明人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
IPC分类号： H01L29/12
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： Semiconductor wafers having a thin layer of strained semiconductor material. These structures include a substrate; an oxide layer upon the substrate; a silicon carbide (SiC) layer upon the oxide layer, and a strained layer of a semiconductor material in a strained state upon the silicon carbide layer, or a matching layer upon the donor substrate that is made from a material that induces strain in subsequent epitaxially grown layers thereon; a strained layer of a semiconductor material of defined thickness in a strained state; and an insulating or semi-insulating layer upon the strained layer in a thickness that retains the strained state of the strained layer. The insulating or semi-insulating layers are made of silicon carbide or oxides and act to retain strain in the strained layer.
摘要翻译：半导体晶片具有应变半导体材料的薄层。这些结构包括底物; 基底上的氧化物层; 氧化物层上的碳化硅（SiC）层，以及在碳化硅层上处于应变状态的半导体材料的应变层，或者由施主衬底上的由随后的外延生长引起应变的材料制成的匹配层生长层; 在应变状态下具有规定厚度的半导体材料的应变层; 以及在应变层上的绝缘或半绝缘层，其厚度保持应变层的应变状态。绝缘层或半绝缘层由碳化硅或氧化物制成并用于将应变保留在应变层中。

2. 发明授权

US07646038B2 Method of fabricating heteroepitaxial microstructures 有权
标题翻译：制造异质外延微结构的方法
公开(公告)号：US07646038B2
公开(公告)日：2010-01-12
申请号：US11852562
申请日：2007-09-10
申请人： Bruce Faure , Fabrice Letertre , Bruno Ghyselen
发明人： Bruce Faure , Fabrice Letertre , Bruno Ghyselen
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： C30B25/183 , C30B33/00 , H01L21/76254
摘要： An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.
摘要翻译：制造具有光滑表面的高品质异质外延微结构的有效方法。该方法包括从基底结构分离层以提供具有分离表面的载体基底，然后通过在载体基底的分离表面上沉积外延层而在载体基底的分离表面上形成异质外延微结构。还包括由这种方法制造的异质外延微结构。

3. 发明授权

US07586154B2 Method for fabricating a substrate with useful layer on high resistivity support 有权
标题翻译：在高电阻率支撑件上制造具有有用层的衬底的方法
公开(公告)号：US07586154B2
公开(公告)日：2009-09-08
申请号：US11831217
申请日：2007-07-31
申请人： Bruno Ghyselen , Hubert Moriceau
发明人： Bruno Ghyselen , Hubert Moriceau
IPC分类号： H01L21/30
CPC分类号： H01L21/3225 , H01L21/3226 , H01L21/76254 , H01L29/32
摘要： A substrate suitable for producing a high frequency electronic circuit. This substrate includes a support substrate having a controlled amount of interstitial oxygen and which is treated to precipitate at least some of the oxygen therein; and a useful layer supported by the support substrate. Advantageously, the support substrate has high resistivity and includes oxygen precipitates beneath the useful layer while also being free of depleted zones of oxygen precipitates adjacent the useful layer. This is prepared by the methods disclosed herein which are applicable in particular to SOI substrates.
摘要翻译：适用于生产高频电子电路的衬底。该衬底包括具有受控量的间隙氧的支撑衬底，并被处理以沉淀其中的至少一部分氧; 以及由支撑基板支撑的有用层。有利地，支撑衬底具有高电阻率并且在有用层下方包括氧沉淀物，同时也没有与有用层相邻的氧沉淀物的耗尽区域。这通过本文所公开的方法制备，其特别适用于SOI衬底。

4. 发明授权

US07498245B2 Embrittled substrate and method for making same 有权
标题翻译：底物及其制造方法
公开(公告)号：US07498245B2
公开(公告)日：2009-03-03
申请号：US10276306
申请日：2001-05-29
申请人： Bernard Aspar , Chrystelle Lagahe , Olivier Rayssac , Bruno Ghyselen
发明人： Bernard Aspar , Chrystelle Lagahe , Olivier Rayssac , Bruno Ghyselen
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L2221/68368
摘要： This invention relates to a substrate (1) weakened by the presence of a micro-cavities zone, the micro-cavities zone (4′) delimiting a thin layer (5) with one face (2) of the substrate (1), some or all of the gaseous species having been eliminated from the micro-cavities (4′).The invention also relates to a process for the production of such a substrate.
摘要翻译：本发明涉及通过存在微腔区而被削弱的衬底（1），用空心衬垫（1）的一个面（2）限定薄层（5）的微腔区（4'），一些或已经从微腔（4'）中去除的全部气态物质。本发明还涉及生产这种基材的方法。

5. 发明授权

US07465991B2 Semiconductor substrates having useful and transfer layers 有权
标题翻译：具有有用和转移层的半导体衬底
公开(公告)号：US07465991B2
公开(公告)日：2008-12-16
申请号：US11402047
申请日：2006-04-12
申请人： Bruno Ghyselen , Fabrice Letertre
发明人： Bruno Ghyselen , Fabrice Letertre
IPC分类号： H01L27/01
CPC分类号： H01L21/3148 , H01L21/318 , H01L21/76254 , H01L29/1608 , H01L29/165 , H01L29/2003 , H01L29/267 , Y10T428/24479
摘要： A semiconductor substrate that includes a relatively thin monocrystalline useful layer, an intermediate layer transferred from a source substrate, and a relatively thick layer of a support present on one of the useful layer of the intermediate layer. The support is made of a deposited material that has a lower quality than that of one or both of the intermediate and useful layers. A bonding layer may be included on one of the intermediate layer or the useful layer, or both, to facilitate bonding of the layers an a thin layer may be provided between the useful layer and intermediate layer. These final substrates are useful in optic, electronic, or optoelectronic applications.
摘要翻译：一种半导体衬底，其包括相对薄的单晶有用层，从源极衬底转移的中间层和存在于所述中间层的有用层之一上的相对厚的载体层。该载体由具有比中间层和有用层中的一个或两个的质量低的沉积材料制成。可以在中间层或有用层之一或两者中包括结合层，以促进层的结合，可以在有用层和中间层之间提供薄层。这些最终的底物可用于光学，电子或光电子应用。

6. 发明申请

US20080164492A1 PROCESS FOR TRANSFERRING A LAYER OF STRAINED SEMICONDUCTOR MATERIAL 有权
标题翻译：用于传输应变半导体材料层的方法
公开(公告)号：US20080164492A1
公开(公告)日：2008-07-10
申请号：US12040134
申请日：2008-02-29
申请人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
发明人： Bruno Ghyselen , Daniel Bensahel , Thomas Skotnicki
IPC分类号： H01L29/04 , H01L21/18
CPC分类号： H01L29/1054 , H01L21/76254 , H01L21/76259 , Y10S438/938
摘要： A process for preparing a semiconductor wafer with a strained layer having an elevated critical thickness. A first wafer having a strained layer of a semiconductor material on a matching layer is provided, with the semiconductor material having a first lattice parameter corresponding to a relaxed state and a first critical thickness corresponding to the first strained state, and the first thickness is less than the first critical thickness, The matching layer has a matching lattice parameter that is sufficiently different than the first lattice parameter to retain the strained layer in the strained state, The strained layer is transferred to a receiving substrate selected to provide the transferred strained layer with a second critical thickness that is greater than the first critical thickness, and additional semiconductor material is grown on the transferred strained layer to provide a second thickness that is greater than the first critical thickness and less than the second critical thickness, The invention also relates to the semiconductor structures that can be produced by the process.
摘要翻译：一种制备具有临界厚度升高的应变层的半导体晶片的方法。提供了在匹配层上具有半导体材料应变层的第一晶片，半导体材料具有对应于松弛状态的第一晶格参数和对应于第一应变状态的第一临界厚度，并且第一厚度较小匹配层具有与第一晶格参数充分不同的匹配晶格参数，以将应变层保持在应变状态。应变层被转移到选择的接收衬底以提供转移的应变层，第二临界厚度大于第一临界厚度，并且附加的半导体材料在转移的应变层上生长以提供大于第一临界厚度并小于第二临界厚度的第二厚度。本发明还涉及可以通过该方法生产的半导体结构。

7. 发明授权

US07265435B2 Method for implanting atomic species through an uneven surface of a semiconductor layer 有权
标题翻译：通过半导体层的不平坦表面注入原子种类的方法
公开(公告)号：US07265435B2
公开(公告)日：2007-09-04
申请号：US11261785
申请日：2005-10-31
申请人： Bruno Ghyselen , Takeshi Akatsu
发明人： Bruno Ghyselen , Takeshi Akatsu
IPC分类号： H01L31/288 , H01L21/425
CPC分类号： H01L21/26506 , H01L21/76254
摘要： A method for implanting atomic species through an uneven surface of a semiconductor layer. The technique includes applying a covering layer upon the uneven surface in an amount sufficient and in a manner to increase surface uniformity. The method also includes implanting atomic species through the covering layer and uneven surface to obtain a more uniform depth of implantation of the atomic species in the layer.
摘要翻译：一种用于通过半导体层的不平坦表面注入原子物质的方法。该技术包括以足够的量并以增加表面均匀性的方式在不平坦表面上施加覆盖层。该方法还包括通过覆盖层和不平坦表面注入原子物质，以获得层中原子物质的更均匀的注入深度。

8. 发明授权

US07256075B2 Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer 有权
标题翻译：在剥离薄层之后回收包括多层结构的晶片
公开(公告)号：US07256075B2
公开(公告)日：2007-08-14
申请号：US11075273
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
IPC分类号： H01L21/00
CPC分类号： H01L21/02032 , H01L21/76254 , H01L21/76259
摘要： The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
摘要翻译：本发明涉及从施主晶片转移有用层的方法，该施主晶片在施主晶片的表面上包括多层结构，其具有足以形成用于随后拆卸的多个有用层的厚度。这些层可以由具有足够不同性质的材料形成，使得它们可以被选择性地去除。材料层还可以包括可以相互选择性地去除的子层。

9. 发明申请

US20060286770A1 Method for concurrently producing at least a pair of semiconductor structures that each include at least one useful layer on a substrate 失效
标题翻译：用于同时产生至少一对半导体结构的方法，每个半导体结构在衬底上包括至少一个有用层
公开(公告)号：US20060286770A1
公开(公告)日：2006-12-21
申请号：US11509047
申请日：2006-08-24
申请人： Bruno Ghyselen , Cecile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
发明人： Bruno Ghyselen , Cecile Aulnette , Benoit Bataillou , Carlos Mazure , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.
摘要翻译：一种用于制造半导体结构的方法，所述半导体结构在衬底上包括至少一个有用层。该方法包括提供源极基底中的弱化区域，其在弱化区域和源极基底的前面之间限定相对较厚的有用层; 将源极基板的正面粘合到支撑基板上，并在弱化区域将有用层与源极基板分离，以将有用层转移到支撑基板; 将原子物质植入有用层的自由面中，以在其中形成受控的平均注入深度，以在限定前后有用层的有用层内形成弱化区，其中后部有用层与源极基底和前部有用层接触含有较大浓度的缺陷; 在加入原子物质之后将加强基底粘合到前有用层的自由面上; 并且沿着弱化区从后部有用层分离前部有用层，以形成包括支撑基板和其上的后部有用层的半导体结构。所获得的结构可用于电子学，光电子学或光学领域。

10. 发明申请

US20060076578A1 Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom 有权
标题翻译：在从其分离薄层之后回收包含缓冲层的晶片
公开(公告)号：US20060076578A1
公开(公告)日：2006-04-13
申请号：US11285008
申请日：2005-11-23
申请人： Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cecile Aulnette , Benedite Osternaud , Yves-Mathieu Le Vaillant , Takeshi Akatsu
IPC分类号： H01L31/109
CPC分类号： H01L21/02032
摘要： A donor wafer resulting from a method of recycling the wafer after detaching at least one useful layer. The donor wafer includes a substrate; a buffer structure on the substrate; a protective layer associated with the buffer structure; and a post detachment layer located above the buffer structure and presenting projections or rough portions on its surface. The protective layer prevents removal of the entire buffer structure when the post detachment layer is removed.
摘要翻译：由在分离至少一个有用层之后再循环晶片的方法产生的施主晶片。施主晶片包括基板; 衬底上的缓冲结构; 与缓冲结构相关联的保护层; 以及位于缓冲结构上方的后分离层，并且在其表面上呈现突起或粗糙部分。当去除后剥离层时，保护层防止整个缓冲结构的移除。

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