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1. 发明授权

US06403450B1 Heat treatment method for semiconductor substrates 有权
标题翻译：半导体基板的热处理方法
公开(公告)号：US06403450B1
公开(公告)日：2002-06-11
申请号：US09445314
申请日：2000-02-29
申请人： Christophe Maleville , Thierry Barge , Bernard Aspar , Hubert Moriceau , André-Jacques Auberton-Herve
发明人： Christophe Maleville , Thierry Barge , Bernard Aspar , Hubert Moriceau , André-Jacques Auberton-Herve
IPC分类号： H01L21322
CPC分类号： H01L21/3221 , H01L21/76254
摘要： The invention concerns a method for treating, a substrate comprising a semi-conducting layer (4) on at least one of its surfaces. Said method comprises a step for annealing the substrate and a step for forming, an oxide layer (6) at the semi-conducting layer (4) surface, carried out before the end of the annealing step, protecting the remainder of the semi-conducting layer (4).
摘要翻译：本发明涉及一种用于处理在其至少一个表面上包含半导体层（4）的衬底的方法。所述方法包括用于退火衬底的步骤和在退火步骤结束之前在半导体层（4）表面形成氧化物层（6）的步骤，保护半导体的剩余部分层（4）。

2. 发明申请

US20110092051A1 PROCESS FOR THE TRANSFER OF A THIN FILM COMPRISING AN INCLUSION CREATION STEP 有权
标题翻译：包含包含创建步骤的薄膜转移过程
公开(公告)号：US20110092051A1
公开(公告)日：2011-04-21
申请号：US12977757
申请日：2010-12-23
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/302 , H01L21/306 , H01L21/31
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

3. 发明申请

US20070232025A1 PROCESS FOR THE TRANSFER OF A THIN FILM 有权
标题翻译：转印薄膜的方法
公开(公告)号：US20070232025A1
公开(公告)日：2007-10-04
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/46
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

4. 发明授权

US07883994B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07883994B2
公开(公告)日：2011-02-08
申请号：US11747733
申请日：2007-05-11
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/265
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

5. 发明授权

US06756286B1 Method for transferring a thin film comprising a step of generating inclusions 有权
标题翻译：用于转印薄膜的方法，包括产生夹杂物的步骤
公开(公告)号：US06756286B1
公开(公告)日：2004-06-29
申请号：US09380322
申请日：1999-11-22
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21265
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions are designed to form traps for gaseous compounds which subsequently are implanted. In a subsequent step gaseous compounds are implanted in a manner to convey the gaseous compounds into the layer of inclusions. The dose of implanted gaseous compounds is made sufficient to cause the formation of micro-cavities to form a fracture plane along which the thin film can be separated from the remainder of the substrate.
摘要翻译：用于转移在初始底物中限定的至少一种固体材料薄膜的方法。该方法包括一个步骤，其中在初始衬底中形成一层夹杂物，其深度对应于薄膜的所需厚度。这些夹杂物被设计成形成随后被植入的气态化合物的阱。在随后的步骤中，以将气态化合物输送到夹杂层中的方式注入气态化合物。植入的气态化合物的剂量足以引起微孔的形成以形成断裂平面，沿着该断裂面，薄膜可以与基底的其余部分分离。

6. 发明授权

US07229899B2 Process for the transfer of a thin film 有权
标题翻译：薄膜转印工艺
公开(公告)号：US07229899B2
公开(公告)日：2007-06-12
申请号：US10667707
申请日：2003-09-22
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个植入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

7. 发明授权

US08470712B2 Process for the transfer of a thin film comprising an inclusion creation step 有权
标题翻译：用于转移包含包含物形成步骤的薄膜的方法
公开(公告)号：US08470712B2
公开(公告)日：2013-06-25
申请号：US12977757
申请日：2010-12-23
申请人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
发明人： Hubert Moriceau , Michel Bruel , Bernard Aspar , Christophe Maleville
IPC分类号： H01L21/302 , H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506 , Y10S438/977
摘要： A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can be in the form of one or more layers deposited by a chemical vapor deposition, epitaxial growth, ion sputtering, or a stressed region or layer formed by any of the aforementioned processes. The inclusions can also be a region formed by heat treatment of an initial support or by heat treatment of a layer formed by any of the aforementioned processes, or by etching cavities in a layer. In a subsequent step, gaseous compounds are introduced into the layer of inclusions to form micro-cavities that form a fracture plane along which the thin film can be separated from a remainder of the substrate.
摘要翻译：用于转移薄膜的方法包括形成夹杂物层以产生气态化合物的捕集阱。夹杂物可以是一个或多个注入区域的形式，其作为被配置成捕获植入物种的限制层。此外，夹杂物可以是通过化学气相沉积，外延生长，离子溅射或由任何上述方法形成的应力区域或层沉积的一个或多个层的形式。夹杂物也可以是通过初始载体的热处理或通过任何上述方法形成的层的热处理形成的区域，或者通过蚀刻层中的空腔而形成的区域。在随后的步骤中，将气体化合物引入到夹杂物层中以形成形成断裂平面的微空腔，通过该断裂平面可以将薄膜与基底的其余部分分离。

8. 发明授权

US07645392B2 Methods for preparing a bonding surface of a semiconductor wafer 有权
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US07645392B2
公开(公告)日：2010-01-12
申请号：US11472665
申请日：2006-06-21
申请人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
发明人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
IPC分类号： B44C1/22
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括用NH 4 OH / H 2 O 2溶液处理氧化表面，处理参数足以从晶片表面蚀刻约大约至大约120埃，然后在低于约50℃的温度下用盐酸处理蚀刻的表面持续时间少于约10分钟以从氧化表面除去分离的颗粒。该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

9. 发明申请

US20060273068A1 Methods for preparing a bonding surface of a semiconductor wafer 有权
标题翻译：制备半导体晶片的接合表面的方法
公开(公告)号：US20060273068A1
公开(公告)日：2006-12-07
申请号：US11472665
申请日：2006-06-21
申请人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
发明人： Corinne Maunand Tussot , Christophe Maleville , Hubert Moriceau , Alain Soubie
IPC分类号： B44C1/22
CPC分类号： H01L21/76254
摘要： A method for preparing an oxidized surface of a first wafer for bonding with a second wafer. The method includes treating the oxidized surface with a solution of NH4OH/H2O2 at treatment parameters sufficient to etch about 10 Å to about 120 Å from the wafer surface, followed by treating the etched surface with hydrochloric acid species at a temperature below about 50° C. for a duration of less than about 10 minutes to remove isolated particles from the oxidized surface. This method cleans the wafer surface without increasing roughness or creating rough patches thereon, and thus provides a cleaned surface capable of providing an increased bonding energy between the first and second wafers when those surfaces are bonded together. This cleaning process is advantageously used in a thin layer removal process to fabricate a semiconductor on insulator structure.
摘要翻译：一种用于制备用于与第二晶片接合的第一晶片的氧化表面的方法。该方法包括在处理参数下处理含有NH 4 OH / H 2 O 2 O 2的溶液的氧化表面，所述处理参数足以蚀刻至约约120埃，然后在低于约50℃的温度下用盐酸物质处理蚀刻表面，持续时间小于约10分钟以从氧化表面除去分离的颗粒。该方法清洁晶片表面而不会增加粗糙度或在其上产生粗糙的贴片，从而提供了当这些表面粘接在一起时能够在第一和第二晶片之间提供增加的结合能的清洁表面。该清洁方法有利地用于薄层去除工艺以制造绝缘体上半导体结构。

10. 发明授权

US07235461B2 Method for bonding semiconductor structures together 有权
标题翻译：将半导体结构结合在一起的方法
公开(公告)号：US07235461B2
公开(公告)日：2007-06-26
申请号：US10832267
申请日：2004-04-27
申请人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
发明人： Christophe Maleville , Corinne Maunand Tussot , Olivier Rayssac , Sébastien Kerdiles , Benjamin Scarfogliere , Hubert Moriceau , Christophe Morales
IPC分类号： H01L21/46
CPC分类号： H01L21/76259 , H01L21/2007 , H01L21/76251 , H01L21/76254
摘要： A method for bonding semiconductor structures together is described. The technique includes providing a bonding surface on each of two semiconductor structures, brushing a bonding surface of at least one of the structures to remove contaminants and to activate hydroxyl groups on the bonding surface to enhance hydrophilicity and to facilitate molecular bonding of the structures, and joining the bonding surfaces together by molecular bonding to form a composite structure.
摘要翻译：描述将半导体结构结合在一起的方法。该技术包括在两个半导体结构中的每一个上提供接合表面，刷洗至少一个结构的结合表面以去除污染物并激活接合表面上的羟基以增强亲水性并促进结构的分子结合，以及通过分子键合将接合表面结合在一起以形成复合结构。

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