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1. 发明申请

US20050029224A1 Detachable substrate or detachable structure and method for the production thereof 有权
标题翻译：可拆卸基板或可拆卸结构及其制造方法
公开(公告)号：US20050029224A1
公开(公告)日：2005-02-10
申请号：US10468223
申请日：2002-04-11
申请人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
发明人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
IPC分类号： H01L21/02 , H01L21/68 , H01L21/762 , H01L21/78 , H01L27/12 , B44C1/22
CPC分类号： H01L21/7813 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L2221/68318 , H01L2221/68359 , H01L2221/68363 , H01L2924/19041 , Y10T156/11
摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.
摘要翻译：本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于，所述界面制成使得其具有至少一个具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

2. 发明授权

US07713369B2 Detachable substrate or detachable structure and method for the production thereof 有权
标题翻译：可拆卸基板或可拆卸结构及其制造方法
公开(公告)号：US07713369B2
公开(公告)日：2010-05-11
申请号：US10468223
申请日：2002-04-11
申请人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
发明人： Bernard Aspar , Hubert Moriceau , Marc Zussy , Olivier Rayssac
IPC分类号： B32B38/10
CPC分类号： H01L21/7813 , H01L21/6835 , H01L21/76254 , H01L21/76259 , H01L2221/68318 , H01L2221/68359 , H01L2221/68363 , H01L2924/19041 , Y10T156/11
摘要： The invention relates to the preparation of a thin layer comprising a step in which an interface is created between a layer used to create said thin layer and a substrate, characterized in that said interface is made in such a way that it is provided with at least one first zone (Z1) which has a first level of mechanical strength, and a second zone (Z2) which has a level of mechanical strength which is substantially lower than that of the first zone. Said interface can be created by glueing surfaces which are prepared in a differentiated manner, by a layer which is buried and embrittled in a differentiated manner in said zones, or by an intermediate porous layer.
摘要翻译：本发明涉及薄层的制备，其包括在用于产生所述薄层的层与基底之间形成界面的步骤，其特征在于所述界面以至少提供至少具有第一级机械强度的第一区域（Z1）和具有基本上低于第一区域的机械强度水平的第二区域（Z2）。所述界面可以通过以不同的方式制备的表面，通过在所述区域中以不同的方式被掩埋和脆化的层或通过中间多孔层来胶合表面而形成。

3. 发明申请

US20090095399A1 METHOD FOR TRIMMING A STRUCTURE OBTAINED BY THE ASSEMBLY OF TWO PLATES 有权
标题翻译：用于调整由两板组装获得的结构的方法
公开(公告)号：US20090095399A1
公开(公告)日：2009-04-16
申请号：US11722115
申请日：2005-12-22
申请人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
发明人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
IPC分类号： B32B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译：一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一晶片，其中修整涉及第一晶片。该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

4. 发明授权

US06204079B1 Selective transfer of elements from one support to another support 有权
标题翻译：元素从一个支持选择性转移到另一个支持
公开(公告)号：US06204079B1
公开(公告)日：2001-03-20
申请号：US09352783
申请日：1999-07-14
申请人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac
发明人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac
IPC分类号： H01L2100
CPC分类号： H01L21/568 , H01L21/6835 , H01L24/29 , H01L24/83 , H01L24/97 , H01L2221/68354 , H01L2221/68368 , H01L2224/83191 , H01L2224/8385 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01033 , H01L2924/01039 , H01L2924/01058 , H01L2924/01072 , H01L2924/01074 , H01L2924/01087 , H01L2924/07802 , H01L2924/12042 , H01L2224/83 , H01L2924/00
摘要： A process for the selective transfer of elements from a transfer support to a reception support, the elements bonding through a first face to the transfer support according to a defined bonding energy, the elements each having a second face configured to contact with the reception support. Elements to be transferred are transferred by applying a bonding energy between them and the reception support that exceeds the bonding energy between their first face and the transfer support. Elements not to be transferred onto the transfer support are retained.
摘要翻译：一种用于将元件从转移支撑件选择性地传送到接收支撑件的过程，所述元件根据限定的结合能将第一面粘接到转印支撑件，每个元件具有被配置为与接收支撑件接触的第二面。通过在它们之间施加超过其第一面和转印支撑体之间的结合能的接收支撑体之间的结合能量来转移待转移的元件。不转移到转印支架上的元素被保留。

5. 发明授权

US07902038B2 Detachable substrate with controlled mechanical strength and method of producing same 有权
标题翻译：具有受控机械强度的可分离衬底及其制造方法
公开(公告)号：US07902038B2
公开(公告)日：2011-03-08
申请号：US10474984
申请日：2002-04-11
申请人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac , Bruno Ghyselen
发明人： Bernard Aspar , Hubert Moriceau , Olivier Rayssac , Bruno Ghyselen
IPC分类号： H01L23/58
CPC分类号： B81C99/008 , H01L21/76254 , Y10S438/958
摘要： The invention relates to a method for production of a detachable substrate, comprising a method step for the production of an interface by means of fixing, using molecular adhesion, one face of a layer on one face of a substrate, in which, before fixing, a treatment stage for at least one of said faces is provided, rendering the mechanical hold at the interface at such a controlled level to be compatible with a subsequent detachment.
摘要翻译：本发明涉及一种可拆卸基板的制造方法，其特征在于，包括：通过使用分子粘合固定，在基板的一个面上的一个面的固定来制造界面的方法步骤，提供了用于至少一个所述面部的处理台，使得在该受控水平处的界面处的机械保持与随后的分离兼容。

6. 发明授权

US08329048B2 Method for trimming a structure obtained by the assembly of two plates 有权
标题翻译：用于修整通过组装两个板获得的结构的方法
公开(公告)号：US08329048B2
公开(公告)日：2012-12-11
申请号：US11722115
申请日：2005-12-22
申请人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
发明人： Marc Zussy , Bernard Aspar , Chrystelle Lagahe-Blanchard , Hubert Moriceau
IPC分类号： B23B37/02
CPC分类号： H01L21/02008 , H01L21/76251 , H01L21/76254 , Y10T156/10
摘要： A method for trimming a structure obtained by bonding a first wafer to a second waver on contact faces and thinning the first waver, wherein at least either the first wafer or the second wafer is chamfered and thus exposes the edge of the contact face of the first wafer, wherein the trimming concerns the first wafer. The method includes a) selecting the second wafer from among wafers with a resistance to a chemical etching planned in b) that is sufficient with respect to the first wafer to allow b) to be carried out; b) after bonding the first wafer to the second wafer, chemical etching the edge of the first wafer to form in the first wafer a pedestal resting entirely on the contact face of the second wafer and supporting the remaining of the first wafer; and c) thinning the first wafer until the pedestal is reached and attacked, to provide a thinned part of the first wafer.
摘要翻译：一种用于修整通过将第一晶片接合在接触面上的第二摆动件并使第一摇摆器变薄而获得的结构的方法，其中至少第一晶片或第二晶片被倒角，从而使第一晶片或第二晶片的接触面的边缘暴露在第一晶片，其中修整涉及第一晶片。该方法包括：a）从具有对b）中计划的化学蚀刻的抗性的晶片中选择第二晶片，相对于第一晶片来说足以允许b）被执行; b）在将第一晶片接合到第二晶片之后，化学蚀刻第一晶片的边缘，以在第一晶片中形成完全搁置在第二晶片的接触面上并支撑第一晶片的剩余部分的基座; 以及c）使所述第一晶片变薄直到所述基座到达并受到攻击，以提供第一晶片的变薄部分。

7. 发明授权

US06821376B1 Method for separating two elements and a device therefor 有权
标题翻译：用于分离两个元件的方法及其装置
公开(公告)号：US06821376B1
公开(公告)日：2004-11-23
申请号：US10030272
申请日：2002-01-08
申请人： Olivier Rayssac , Hubert Moriceau , Bernard Aspar , Philippe Montmayeul
发明人： Olivier Rayssac , Hubert Moriceau , Bernard Aspar , Philippe Montmayeul
IPC分类号： B32B3500
CPC分类号： H01L21/67092 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/68368 , Y10S156/941 , Y10T29/49822 , Y10T29/53683 , Y10T156/11 , Y10T156/1111 , Y10T156/19
摘要： A process and device for separating two semi-conductor substrate wafers along an interface. The process includes forming a cavity, and initiating separation by applying force to the interface through the cavity. The device utilizes fluid or gas, and pressure chambers, to subject adherent faces of the interface to at least one of chemical or mechanical action.
摘要翻译：一种用于沿着界面分离两个半导体衬底晶片的工艺和装置。该方法包括形成空腔，并且通过向界面施加力通过腔起始分离。该装置利用流体或气体以及压力室来使界面的粘附面至少为化学或机械作用之一。

8. 发明授权

US07494897B2 Method of producing mixed substrates and structure thus obtained 有权
标题翻译：制备混合基材的方法和由此获得的结构
公开(公告)号：US07494897B2
公开(公告)日：2009-02-24
申请号：US10540303
申请日：2003-12-22
申请人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
发明人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
IPC分类号： H01L21/30
CPC分类号： H01L21/76264 , H01L21/187 , H01L21/76275
摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.
摘要翻译：本发明的方法包括一个制备步骤，在该步骤中衬底被一层覆盖，一个压制步骤，其中将包括凹凸图案的模具压入上述层的厚度的一部分中，至少一个蚀刻步骤，其中蚀刻该层，直到基板的表面的一部分被剥离，以及基板蚀刻步骤，由此使用从模具图案限定的蚀刻图案来蚀刻该基板。制备步骤包括由可固化材料的下层形成的子步骤，涉及所述层的固化的步骤和包括形成邻近固化的外部亚层的子步骤子层。此外，在挤压步骤中，模具中的上述突起穿透外部子层，直到与固化的子层接触。

9. 发明申请

US20060166461A1 Method of producing mixed substrates and structure thus obtained 有权
公开(公告)号：US20060166461A1
公开(公告)日：2006-07-27
申请号：US10540303
申请日：2003-12-22
申请人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
发明人： Franck Fournel , Hubert Moriceau , Bernard Aspar , Marc Zussy
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76264 , H01L21/187 , H01L21/76275
摘要： The inventive method includes a preparation step during which the substrate is covered with a layer, a pressing step in which a mould including a pattern of recesses and protrusions is pressed into part of the thickness of the aforementioned layer, at least one etching step in which the layer is etched until parts of the surface of the substrate have been stripped, and a substrate etching step whereby the substrate is etched using an etching pattern which is defined from the mould pattern. The preparation step includes a sub-step consisting of the formation of a lower sub-layer of curable material, a step involving the curing of said layer and a sub-step including the formation of an outer sub-layer which is adjacent to the cured sub-layer. Moreover, during the pressing step, the above-mentioned protrusions in the mould penetrate the outer sub-layer until contact is reached with the cured sub-layer.

10. 发明授权

US06756285B1 Multilayer structure with controlled internal stresses and making same 有权
标题翻译：具有受控内应力的多层结构
公开(公告)号：US06756285B1
公开(公告)日：2004-06-29
申请号：US09913006
申请日：2002-01-09
申请人： Hubert Moriceau , Olivier Rayssac , Anne-Marie Cartier , Bernard Aspar
发明人： Hubert Moriceau , Olivier Rayssac , Anne-Marie Cartier , Bernard Aspar
IPC分类号： H01L2102
CPC分类号： B81C1/00666 , B81C2201/0167 , H01L21/185 , H01L21/76254 , Y10T428/12528 , Y10T428/31678
摘要： A multilayer structure with controlled internal stresses comprising, in this order, a first main layer (110a), at least a first constraint adaptation layer (130) in contact with the first main layer, at least a second stress adaptation layer (120) put into contact by adhesion with said first stress adaptation layer, and a second main layer (110b) in contact with the second stress adaptation layer, the first and second stress adaptation layers having contact stresses with the first and second main layers. Application to the realization of electronic circuits and membrane devices.
摘要翻译：具有受控的内部应力的多层结构，依次包括第一主层（110a），至少与第一主层接触的第一约束适应层（130），至少第二应力适应层（120）通过与所述第一应力适应层的粘合接触，以及与第二应力适应层接触的第二主层（110b），第一和第二应力适应层具有与第一和第二主层的接触应力。应用于实现的电子电路和膜装置。

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