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1. 发明授权

US5660744A Plasma generating apparatus and surface processing apparatus 失效
标题翻译：等离子体发生装置和表面处理装置
公开(公告)号：US5660744A
公开(公告)日：1997-08-26
申请号：US492322
申请日：1995-06-19
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A surface processing apparatus comprises a container provided with a first electrode and a second electrode disposed opposite to the first electrode for supporting a substrate to be processed and filled with a gas at a reduced pressure, an electric field generator for generating an electric field between the first and second electrodes, and a magnetic field generator for generating a magnetic field in the vacuum container. The magnetic field generator comprises a plurality of magnet element groups arranged in a circle around the container so as to form a ring, each of the magnet element groups having an axis directed to a center of the circle and a synthetic magnetization direction and comprising one or a plurality of magnet elements having respective magnetization directions which are synthesized to be equal to the synthetic magnetization direction of the each of the magnetic element groups. One of the magnet element groups is so disposed that the synthetic magnetization direction thereof coincides with the axis thereof, and each of the magnet element groups other than the one magnet element group is so disposed that an angle of the synthetic magnetization direction thereof relative to the synthetic magnetization direction of the one magnet element group is substantially twice an angle of the axis thereof relative to the axis of the one magnet element group.
摘要翻译：表面处理装置包括：容器，其设置有第一电极和与第一电极相对设置的第二电极，用于支撑待处理的基板并在减压下填充气体;电场发生器，用于在第一电极之间产生电场; 第一和第二电极以及用于在真空容器中产生磁场的磁场发生器。磁场发生器包括围绕容器布置成圆形的多个磁体元件组，以便形成环，每个磁体元件组具有指向圆心的合成磁化方向的轴线，并包括一个或多个多个磁体元件，其各自的磁化方向被合成为等于每个磁性元件组的合成磁化方向。一个磁体元件组被设置成合成磁化方向与其轴线重合，并且除了一个磁体元件组之外的每个磁体元件组被设置成使得其合成磁化方向相对于一个磁体元件组的合成磁化方向基本上是相对于一个磁体元件组的轴线的轴的两倍。

2. 发明授权

US5444207A Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field 失效
标题翻译：等离子体产生装置和用于在均匀磁场中处理晶片的表面处理装置和方法
公开(公告)号：US5444207A
公开(公告)日：1995-08-22
申请号：US37169
申请日：1993-03-26
申请人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
发明人： Makoto Sekine , Keiji Horioka , Haruo Okano , Katsuya Okumura , Isahiro Hasegawa , Masaki Narita
IPC分类号： B23K10/00 , H01J37/32 , H01L21/00 , H05H1/18
CPC分类号： H01J37/32623 , B23K10/003 , H01J37/3266
摘要： A surface processing device and method for forming a magnetic field having a uniform strength over a wide area of an electrode surface to generate a uniform high density plasma over the overall surface of a wafer. The device comprises a vacuum container contains a first electrode and a second electrode disposed opposite to the first electrode; a gas feeding system for feeding a predetermined gas into the vacuum container; an evacuating system for maintaining the inside of the container at a reduced pressure; an electric field generating system for generating an electric field in a region between the first and second electrodes; and a magnetic field generating system for generating a magnetic field in the vacuum container. The magnetic field generating system comprising a plurality of magnets arranged around the outer periphery of the container so as to form a ring in such a manner that directions of magnetization thereof differ from adjacent magnetic element making a 720 degree rotation along the circumference of said ring.
摘要翻译：一种用于形成在电极表面的广泛区域上具有均匀强度的磁场的表面处理装置和方法，以在晶片的整个表面上产生均匀的高密度等离子体。该装置包括：真空容器，包含第一电极和与第一电极相对设置的第二电极; 用于将预定气体供给到真空容器中的气体供给系统; 用于在减压下保持容器内部的排气系统; 用于在第一和第二电极之间的区域中产生电场的电场产生系统; 以及用于在真空容器中产生磁场的磁场产生系统。磁场产生系统包括围绕容器的外周布置的多个磁体，以便形成环，使得其磁化方向与相邻的磁性元件不同，沿着所述环的圆周旋转720度。

3. 发明授权

US5660671A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5660671A
公开(公告)日：1997-08-26
申请号：US266635
申请日：1994-06-28
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：磁控管等离子体处理装置包括：存储蚀刻对象的真空室;设置在真空室中并保持蚀刻对象物的第一电极;与第一电极相对设置并平行于第一电极的第二电极。气体供给单元，其向所述真空室供给蚀刻气体，同时在与所述第一电极相对的所述部分上配置有磁场产生单元，所述电源单元与所述第二电极相对，并且电源单元将功率供给到所述第一或第第二电极并在电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，在第二电极的两端面之间设置有与第二电极相对的平面凹部磁块。

4. 发明授权

US5376211A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5376211A
公开(公告)日：1994-12-27
申请号：US766324
申请日：1991-09-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302 , H01L21/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.
摘要翻译：一种磁控管等离子体处理装置，包括：存储待蚀刻对象物的真空室;设置在真空室内的用于保持物体的第一电极，设置在第一电极的一侧的第二电极，第一电极和第二电极平行彼此相连的气体供给单元向真空室供给蚀刻气体;磁场产生装置，包括设置在第二电极的相对侧的腔室外侧的磁性块，并且能够围绕与该物体保持的物体垂直的轴旋转第一电极和向第一和第二电极之一供电并在这些平行电极之间产生放电的电源单元。磁性块具有设置有彼此极性相反的磁极的端面，此外，在磁极之间设置与第二电极相反的平面凹部。

5. 发明授权

US5474643A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5474643A
公开(公告)日：1995-12-12
申请号：US169551
申请日：1993-12-20
申请人： Junichi Arami , Tamio Endo , Shiro Koyama , Kazuo Kikuchi , Teruaki Shiraishi , Isahiro Hasegawa , Keiji Horioka , Haruo Okano , Katsuya Okumura
发明人： Junichi Arami , Tamio Endo , Shiro Koyama , Kazuo Kikuchi , Teruaki Shiraishi , Isahiro Hasegawa , Keiji Horioka , Haruo Okano , Katsuya Okumura
IPC分类号： H01J37/32 , H05H1/00 , H05H11/00
CPC分类号： H01J37/32431 , H01J2237/16
摘要： A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generating plasma in the process chamber. The process chamber is defined by the peripheral wall having a circular cross section. Members forming parts of the peripheral wall each have an inner face continuous with the surface of the peripheral wall and curved substantially at the same radius of curvature as the surface of the peripheral wall.
摘要翻译：等离子体处理装置具有用于接收被处理物的处理室，形成处理室的周壁的一部分的监视窗口，压力输出端口，栅极和用于形成电场的等离子体产生装置，在处理室中产生等离子体。处理室由具有圆形横截面的周壁限定。形成周壁的部件的部件各自具有与周壁的表面连续的内表面，并且基本上以与周壁的表面相同的曲率半径弯曲。

6. 发明授权

US5888338A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5888338A
公开(公告)日：1999-03-30
申请号：US827439
申请日：1997-03-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极，其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部块。

7. 发明授权

US5310454A Dry etching method 失效
标题翻译：干蚀刻法
公开(公告)号：US5310454A
公开(公告)日：1994-05-10
申请号：US26042
申请日：1993-03-04
申请人： Tokuhisa Ohiwa , Hisataka Hayashi , Keiji Horioka , Haruo Okano , Takaya Matsushita , Isahiro Hasegawa , Akira Takeuchi
发明人： Tokuhisa Ohiwa , Hisataka Hayashi , Keiji Horioka , Haruo Okano , Takaya Matsushita , Isahiro Hasegawa , Akira Takeuchi
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31116
摘要： A dry etching method by a plasma etching forms a mask pattern, having an opening up to 1 .mu.m width on a silicon oxide layer formed on a silicon substrate. The substrate is laced into a reactive chamber having an etching gas introducing means and fluorocarbon gas and hydrogen gas as the etching gas are introduced such that a ratio of the hydrogen gas to the gas mixture satisfies 50% to 80%. The plasma is generated, and by using the plasma etching, the silicon oxide layer is etched according to the mask pattern to form an opening having an aspect ratio of more than 1 in the silicon oxide layer.
摘要翻译：通过等离子体蚀刻的干蚀刻方法形成在硅基板上形成的氧化硅层上具有至多1μm宽的开口的掩模图案。衬底被引入具有蚀刻气体引入装置的反应室和碳氟化合物气体和氢气作为蚀刻气体，使得氢气与气体混合物的比率满足50％至80％。产生等离子体，并且通过使用等离子体蚀刻，根据掩模图案蚀刻氧化硅层，以在氧化硅层中形成长径比大于1的开口。

8. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

9. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

10. 发明授权

US4595601A Method of selectively forming an insulation layer 失效
标题翻译：选择性地形成绝缘层的方法
公开(公告)号：US4595601A
公开(公告)日：1986-06-17
申请号：US736211
申请日：1985-05-20
申请人： Keiji Horioka , Haruo Okano , Makoto Sekine
发明人： Keiji Horioka , Haruo Okano , Makoto Sekine
IPC分类号： C04B41/45 , C04B41/81 , C23C8/04 , C23C16/04 , H01L21/316 , H01L21/32 , H01L21/762 , B05D3/06
CPC分类号： H01L21/02238 , C04B41/4505 , C04B41/81 , C23C16/047 , C23C8/04 , H01L21/02255 , H01L21/31612 , H01L21/31662 , H01L21/32 , H01L21/76224 , H01L21/76281
摘要： An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to form an insulating compound. The surface layer of the workpiece is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece through the atmosphere of the gaseous mixture, thereby dissociating said halogen-based gas. As a result, a layer comprising the insulating compound is formed on the selected region of the surface of the workpiece on which the light rays have been directly irradiated.
摘要翻译：通过将工件的表面暴露于包含卤素类气体和含有与构成工件的表面层的材料的元素进行化学键合的可复合元素的原料气体的混合物的气氛来选择性地形成绝缘层，以形成绝缘化合物。工件的表面层由诸如金属材料或半导体材料的非绝缘材料形成。通过气体混合物的气氛将光线直接照射在工件表面的选定区域或区域上，从而解离所述卤素类气体。结果，在直接照射光线的工件的表面的选定区域上形成包含绝缘化合物的层。

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