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1. 发明申请

US20150259164A1 SHEET FEEDER AND IMAGE FORMING APPARATUS 有权
标题翻译：纸张进纸器和图像形成装置
公开(公告)号：US20150259164A1
公开(公告)日：2015-09-17
申请号：US14641944
申请日：2015-03-09
申请人： Hirofumi HORITA , Ikuo FUJII , Mizuna TANAKA , Tomoya TANAKA , Toshikane NISHII , Masaki NARITA , Yoshitake SHIMIZU , Yutaka ASO , Takashi FUJIMOTO
发明人： Hirofumi HORITA , Ikuo FUJII , Mizuna TANAKA , Tomoya TANAKA , Toshikane NISHII , Masaki NARITA , Yoshitake SHIMIZU , Yutaka ASO , Takashi FUJIMOTO
IPC分类号： B65H5/06 , B65H3/06 , B65H1/08
CPC分类号： B65H3/5223 , B65H1/08 , B65H3/0684 , B65H3/5207 , B65H3/5215 , B65H5/068 , B65H2404/53 , B65H2404/563 , B65H2405/1118 , B65H2601/521 , B65H2601/524
摘要： A sheet feeder includes a feeding member to contact a sheet and feed the sheet downstream in a sheet conveyance direction, a friction pad disposed facing the feeding member to contact the feeding member, and a receiving table including a pad mount to hold a side of the friction pad opposite a nip between the friction pad and the feeding member. The friction pad includes a fixed range secured to the pad mount upstream from the nip and a movable range extending downstream the nip in the sheet conveyance direction. A first friction force of the pad mount to act on the movable range of the friction pad is smaller than a second friction force of the sheet to act on the movable range of the friction pad.
摘要翻译：片材进给器包括用于接触片材并在片材输送方向下游地供给片材的供给部件，配置成与供给部件接触的供给部件的摩擦垫，以及容纳台，摩擦垫与摩擦垫和进给构件之间的辊隙相对。所述摩擦垫包括固定到所述压区上游的所述垫安装件的固定范围以及在所述纸张输送方向上延伸到所述辊隙下游的可移动范围。衬垫安装件作用在摩擦垫的可移动范围上的第一摩擦力小于片材作用在摩擦垫的可移动范围上的第二摩擦力。

2. 发明申请

US20060137988A1 Semiconductor manufacturing apparatus and manufacturing method of semiconductor device 审中-公开
标题翻译：半导体制造装置及半导体装置的制造方法
公开(公告)号：US20060137988A1
公开(公告)日：2006-06-29
申请号：US11080944
申请日：2005-03-16
申请人： Katsunori Yahashi , Keiichi Takenaka , Masaki Narita , Itsuko Sakai
发明人： Katsunori Yahashi , Keiichi Takenaka , Masaki Narita , Itsuko Sakai
IPC分类号： C25D21/12
CPC分类号： H01J37/32642 , H01J37/32935 , H01L21/67748 , H01L21/681
摘要： According to an aspect of the present invention, a semiconductor manufacturing apparatus, including: a treatment chamber configured to house a substrate; an electrode which is disposed in said treatment chamber and on which the substrate is placed; a robot arm configured to convey the substrate to said electrode; and a sensor configured to detect a detection pattern of a focus ring which is disposed on an outer peripheral edge portion of said electrode, surrounds an peripheral edge of the substrate placed on said electrode and has the detection pattern, wherein clearance between the substrate and the focus ring is adjusted based on detection result of said sensor, is provided.
摘要翻译：根据本发明的一个方面，一种半导体制造装置，包括：处理室，其构造成容纳基板; 电极，设置在所述处理室中，所述基板被放置在所述电极上; 机器人臂构造成将所述基板传送到所述电极; 以及传感器，被配置为检测设置在所述电极的外周边缘部分上的聚焦环的检测图案，所述传感器包围放置在所述电极上的所述基板的周缘，并具有所述检测图案，其中，所述基板和提供了基于所述传感器的检测结果来调整聚焦环的方法。

3. 发明授权

US06989073B2 Semiconductor device manufacturing system for etching a semiconductor by plasma discharge 失效
公开(公告)号：US06989073B2
公开(公告)日：2006-01-24
申请号：US10742881
申请日：2003-12-23
申请人： Takanori Matsumoto , Satoshi Shimonishi , Fumio Sato , Masaki Narita
发明人： Takanori Matsumoto , Satoshi Shimonishi , Fumio Sato , Masaki Narita
IPC分类号： H01L21/306
CPC分类号： H01J37/32082
摘要： A semiconductor device manufacturing system has a vacuum chamber which is provided with a cathode electrode for holding a substrate to be processed and into which a reactive gas for generating discharging plasma by the application of a high-frequency electric power is introduced, a measuring circuit which measures at least one of the impedance of a system including the plasma, the peak-to-peak voltage of a high-frequency signal applied to the plasma, and a self-bias voltage applied to the cathode electrode, and a sense circuit which compares the measured value from the measuring circuit with previously prepared data and senses the change of processing characteristics with time for the substrate in using the discharging plasma or the cleaning time of the inside of the vacuum chamber.

4. 发明授权

US6014963A Method and apparatus for controlling the air-fuel ratio in an internal combustion engine 有权
标题翻译：用于控制内燃机中的空燃比的方法和装置
公开(公告)号：US6014963A
公开(公告)日：2000-01-18
申请号：US203847
申请日：1998-12-02
申请人： Masaki Narita
发明人： Masaki Narita
IPC分类号： F02D45/00 , F02D41/14 , F02D41/00
CPC分类号： F02D41/2454 , F02D41/2445 , F02D41/2448
摘要： A method and apparatus for controlling the air-fuel ratio in an internal combustion engine wherein, when the operating condition of the internal combustion engine has shifted between learning zones, a learning control updates a correction value after the shift is made in accordance with a stand-by function of a control unit to reduce the occurrence of mislearning, perform the correction value updating learning control efficiently and effect the purification of exhaust gases. In the air-fuel ratio controlling method for the internal combustion engine, when the operating condition of the engine has shifted between learning zones, a learning control updates a correction value in accordance with a stand-by function. In the air-fuel ratio controlling apparatus for the internal combustion engine, a stand-by function is added to the control unit so that, when the operating condition of the engine has shifted between learning zones, a learning control for updating a correction value after the shift is conducted in a delayed manner in accordance with a preset wait count. Further, a stand-by function is added to the control unit so that the correction value updates learning control after the shift is performed, in a delayed manner in accordance with a preset wait time.
摘要翻译：一种用于控制内燃机中的空燃比的方法和装置，其中，当所述内燃机的运行状态在学习区之间移动时，学习控制在根据支架进行换档之后更新校正值 - 通过控制单元的功能来减少误学的发生，有效地执行校正值更新学习控制并且实现废气的净化。在内燃机的空燃比控制方法中，当发动机的运转状态在学习区域之间移动时，学习控制根据待机功能更新校正值。在内燃机的空燃比控制装置中，向控制单元添加备用功能，使得当发动机的运转状态在学习区域之间移动时，用于更新校正值之后的校正值的学习控制根据预设的等待计数，以延迟的方式进行移位。此外，将备用功能添加到控制单元，使得校正值根据预设的等待时间以延迟的方式更新移位之后的学习控制。

5. 发明授权

US5610724A Image forming system 失效
标题翻译：图像形成系统
公开(公告)号：US5610724A
公开(公告)日：1997-03-11
申请号：US490011
申请日：1995-06-13
申请人： Masaru Kaneko , Shigeru Yamazaki , Akihiko Motegi , Masaki Narita , Hiroshi Komai
发明人： Masaru Kaneko , Shigeru Yamazaki , Akihiko Motegi , Masaki Narita , Hiroshi Komai
IPC分类号： B65H39/11 , B41J13/10 , B65H31/24 , G03G15/00 , G06F3/12 , G06K15/00 , G03G21/00
CPC分类号： G03G15/6538 , B41J13/106 , G06K15/00 , B65H2407/33 , G03G2215/00907 , G03G2215/00911 , G06K2215/0082
摘要： In an image forming system, an image forming apparatus with an optional main box having a plurality of bins prevents the cover of each bin from being locked in its closed position unless papers output to all the bins are taken out. Hence, all the bins are empty when they are used later, and can be used by any users. This implements a mail box which can be efficiently used by many users.
摘要翻译：在图像形成系统中，具有多个箱的可选主箱的图像形成装置防止每个仓的盖被锁定在其关闭位置，除非输出到所有箱的纸被取出。因此，当以后使用时，所有的空箱都是空的，可以由任何用户使用。这实现了一个可以被许多用户有效使用的邮箱。

6. 发明授权

US09346640B2 Sheet feeder and image forming apparatus 有权
标题翻译：送纸器和成像设备
公开(公告)号：US09346640B2
公开(公告)日：2016-05-24
申请号：US14641944
申请日：2015-03-09
申请人： Hirofumi Horita , Ikuo Fujii , Mizuna Tanaka , Tomoya Tanaka , Toshikane Nishii , Masaki Narita , Yoshitake Shimizu , Yutaka Aso , Takashi Fujimoto
发明人： Hirofumi Horita , Ikuo Fujii , Mizuna Tanaka , Tomoya Tanaka , Toshikane Nishii , Masaki Narita , Yoshitake Shimizu , Yutaka Aso , Takashi Fujimoto
IPC分类号： B65H3/52 , B65H5/06 , B65H1/08 , B65H3/06
CPC分类号： B65H3/5223 , B65H1/08 , B65H3/0684 , B65H3/5207 , B65H3/5215 , B65H5/068 , B65H2404/53 , B65H2404/563 , B65H2405/1118 , B65H2601/521 , B65H2601/524
摘要： A sheet feeder includes a feeding member to contact a sheet and feed the sheet downstream in a sheet conveyance direction, a friction pad disposed facing the feeding member to contact the feeding member, and a receiving table including a pad mount to hold a side of the friction pad opposite a nip between the friction pad and the feeding member. The friction pad includes a fixed range secured to the pad mount upstream from the nip and a movable range extending downstream the nip in the sheet conveyance direction. A first friction force of the pad mount to act on the movable range of the friction pad is smaller than a second friction force of the sheet to act on the movable range of the friction pad.
摘要翻译：片材进给器包括用于接触片材并在片材输送方向下游地供给片材的供给部件，配置成与供给部件接触的供给部件的摩擦垫，以及容纳台，摩擦垫与摩擦垫和进给构件之间的辊隙相对。所述摩擦垫包括固定到所述压区上游的所述垫安装件的固定范围以及在所述纸张输送方向上延伸到所述辊隙下游的可移动范围。衬垫安装件作用在摩擦垫的可移动范围上的第一摩擦力小于片材作用在摩擦垫的可移动范围上的第二摩擦力。

7. 发明授权

US07732338B2 Method of fabricating semiconductor device with reduced pitch 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07732338B2
公开(公告)日：2010-06-08
申请号：US12251791
申请日：2008-10-15
申请人： Masaki Narita
发明人： Masaki Narita
IPC分类号： H01L21/311
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/76224 , H01L27/11521
摘要： A method of fabricating a semiconductor device includes depositing a first film on a workpiece film so that a resist is formed on the first film, processing the first film with the resist serving as a mask, depositing a second film along the first film, processing the second film so that the second film is left only on a sidewall of the first film, depositing a third film on the substrate, exposing a sidewall of the second film, depositing a fourth film along the sidewall and an upper surface of the third film, removing the fourth film except for only its part on the sidewall of the second film, depositing a fifth film on the substrate, planarizing the second to fifth films so that the upper surfaces of the films are exposed, and processing the workpiece film while the second and fifth films serve as a mask.
摘要翻译：一种制造半导体器件的方法包括在工件膜上沉积第一膜，使得在第一膜上形成抗蚀剂，用抗蚀剂作为掩模处理第一膜，沿着第一膜沉积第二膜，第二膜，使得第二膜仅留在第一膜的侧壁上，在基板上沉积第三膜，暴露第二膜的侧壁，沿着侧壁沉积第四膜和第三膜的上表面，除去除了第二膜的侧壁之外的第四膜的第四膜，在基板上沉积第五膜，平面化第二至第五膜，使得膜的上表面暴露，并且处理工件膜，而第二膜第五部电影作为面具。

8. 发明申请

US20090104786A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20090104786A1
公开(公告)日：2009-04-23
申请号：US12251791
申请日：2008-10-15
申请人： Masaki NARITA
发明人： Masaki NARITA
IPC分类号： H01L21/31
CPC分类号： H01L21/0337 , H01L21/0338 , H01L21/76224 , H01L27/11521
摘要： A method of fabricating a semiconductor device includes depositing a first film on a workpiece film so that a resist is formed on the first film, processing the first film with the resist serving as a mask, depositing a second film along the first film, processing the second film so that the second film is left only on a sidewall of the first film, depositing a third film on the substrate, exposing a sidewall of the second film, depositing a fourth film along the sidewall and an upper surface of the third film, removing the fourth film except for only its part on the sidewall of the second film, depositing a fifth film on the substrate, planarizing the second to fifth films so that the upper surfaces of the films are exposed, and processing the workpiece film while the second and fifth films serve as a mask.
摘要翻译：一种制造半导体器件的方法包括在工件膜上沉积第一膜，使得在第一膜上形成抗蚀剂，用抗蚀剂作为掩模处理第一膜，沿着第一膜沉积第二膜，第二膜，使得第二膜仅留在第一膜的侧壁上，在基板上沉积第三膜，暴露第二膜的侧壁，沿着侧壁沉积第四膜和第三膜的上表面，除去除了第二膜的侧壁之外的第四膜的第四膜，在基板上沉积第五膜，平面化第二至第五膜，使得膜的上表面暴露，并且处理工件膜，而第二膜第五部电影作为面具。

9. 发明申请

US20060057785A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20060057785A1
公开(公告)日：2006-03-16
申请号：US10994239
申请日：2004-11-23
申请人： Tomoya Satonaka , Toshiyuki Sasaki , Masaki Narita
发明人： Tomoya Satonaka , Toshiyuki Sasaki , Masaki Narita
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/32137 , H01L21/28044 , H01L21/32139 , H01L21/76229
摘要： Disclosed is a method of manufacturing a semiconductor device, comprising introducing a work piece comprising a semiconductor substrate, a gate insulation film formed on the semiconductor substrate, and a gate electrode film formed on the gate insulation film, into a chamber, and forming a gate electrode by selectively etching the gate electrode film relative to the gate insulation film by anisotropic dry etching in the chamber, wherein forming the gate electrode includes etching the gate electrode film under a condition that a residence time of an etching gas in the chamber is 100 milliseconds or shorter, at least after a part of the gate insulation film is exposed.
摘要翻译：公开了一种制造半导体器件的方法，包括将形成在半导体衬底上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极膜的工件包括半导体衬底，形成在栅极绝缘膜上的栅电极膜，电极，其通过在室中的各向异性干蚀刻相对于栅极绝缘膜选择性蚀刻栅电极膜，其中形成栅电极包括在室内的蚀刻气体的停留时间为100毫秒的条件下蚀刻栅电极膜或更短，至少在栅极绝缘膜的一部分露出之后。

10. 发明申请

US20050023592A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050023592A1
公开(公告)日：2005-02-03
申请号：US10688965
申请日：2003-10-21
申请人： Toshiyuki Sasaki , Masaki Narita
发明人： Toshiyuki Sasaki , Masaki Narita
IPC分类号： H01L21/28 , H01L21/3065 , H01L21/8234 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L29/76
CPC分类号： H01L21/823437
摘要： There are provided a gate dielectric film formed on a semiconductor substrate; a gate electrode including: a first electrode layer formed on the gate dielectric film, a dielectric film having a thickness of 5 Å or more and 100 Å or less, and formed on the first electrode layer, and a second electrode layer formed on the dielectric film; and a source and drain regions formed in the semiconductor substrate at both sides of the gate electrode.
摘要翻译：提供了形成在半导体衬底上的栅介质膜; 栅电极，包括：形成在所述栅极电介质膜上的第一电极层，形成在所述第一电极层上的厚度为或更大且小于或等于或小于100埃的电介质膜，以及形成在所述电介质上的第二电极层电影; 以及在栅电极的两侧形成在半导体衬底中的源区和漏区。

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