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1. 发明授权

US5639699A Focused ion beam deposition using TMCTS 失效
标题翻译：使用TMCTS聚焦离子束沉积
公开(公告)号：US5639699A
公开(公告)日：1997-06-17
申请号：US420153
申请日：1995-04-11
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , H01L21/316
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal. According to this invention, there is provided to a method of repairing a divot defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of burying a material in the divot defect and forming a projecting portion projecting from a substrate surface, covering a region including the projecting portion with flattening films consisting of a material different from that of the substrate to flatten an upper surface of the region, performing simultaneous removal of the projecting portion and the flattening films around the projecting portion using a charged particle beam, and performing removal of the flattening films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凹陷缺陷的方法，该方法具有以下步骤：将材料埋在凹陷缺陷中并形成从基板表面突出的突出部分使用由与基板不同的材料构成的平坦化膜覆盖包括突出部分的区域，以平坦化该区域的上表面，使用带电粒子束同时移除突出部分周围的突出部分和平坦化膜并且执行在执行同时去除的步骤中留下的平坦化膜的去除。

2. 发明授权

US5429730A Method of repairing defect of structure 失效
标题翻译：修复结构缺陷的方法
公开(公告)号：US5429730A
公开(公告)日：1995-07-04
申请号：US144414
申请日：1993-11-02
申请人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
发明人： Hiroko Nakamura , Haruki Komano , Kazuyoshi Sugihara , Keiji Horioka , Mitsuyo Kariya , Soichi Inoue , Ichiro Mori , Katsuya Okumura , Tadahiro Takigawa , Toru Watanabe , Motosuke Miyoshi , Yuichiro Yamazaki , Haruo Okano
IPC分类号： B05D5/00 , C23C16/04 , G03F1/00 , G03F1/26 , G03F1/74 , C23C14/34 , B05D3/06 , B44C1/22
CPC分类号： G03F1/74 , B05D5/005 , C23C16/047 , G03F1/26
摘要： According to this invention, there is provided a method of repairing a bump defect of a structure obtained by forming a predetermined pattern on a substrate, having the steps of forming a first thin film consisting of a material different from that of the substrate on the substrate around the bump defect or close to the bump defect, forming a second thin film on the bump defect and the first thin film to flatten an upper surface of the second thin film, performing simultaneous removal of the bump defect and the thin films on an upper portion of the projecting defect and around the bump defect using a charged particle beam, and performing removal of the thin films left in the step of performing simultaneous removal.
摘要翻译：根据本发明，提供了一种修复通过在基板上形成预定图案而获得的结构的凸点缺陷的方法，该方法具有以下步骤：在基板上形成由不同于基板的材料构成的第一薄膜在凸起缺陷附近或接近凸块缺陷的情况下，在凸起缺陷上形成第二薄膜和使第一薄膜平坦化第二薄膜的上表面，同时去除凸起缺陷和上部的薄膜使用带电粒子束的突出缺陷的一部分和凸起缺陷周围，并且执行在执行同时移除的步骤中留下的薄膜的去除。

3. 发明授权

US6028953A Mask defect repair system and method which controls a dose of a particle beam 失效
标题翻译：掩模缺陷修复系统和控制粒子束剂量的方法
公开(公告)号：US6028953A
公开(公告)日：2000-02-22
申请号：US90342
申请日：1998-06-04
申请人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
发明人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
IPC分类号： G03F1/32 , G03F1/72 , G06K9/00 , H01L21/027
CPC分类号： G03F1/26 , G03F1/74 , G03F1/32 , H01J2237/31742
摘要： A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.
摘要翻译：一种掩模缺陷修复系统，其通过照射粒子束，在由透明基板制成的掩模和形成在基板上的掩模材料上进行修补，包括：成像光束照射单元，用于二维扫描和照射成像用光束在掩模的表面上，具有检测器，用于通过照射用于成像的光束来检测从掩模的表面发射的二次粒子的第一强度分布;图像处理单元，用于执行至少部分第一强度分布的图像处理的第二强度分布，用于将第一和第二强度分布显示为图像的图像显示单元，用于在图像上设置要用光束处理的期望区域的外部输入单元，照射区域确定单元，用于基于第二强度dis来确定在待处理的所需区域上的束照射区域用于在束照射区域照射用于缺陷修复的光束的修复光束照射单元，以及用于将蚀刻气体或沉积气体供应到掩模的表面的气体供给单元。

4. 发明授权

US5591970A Charged beam apparatus 失效
标题翻译：带电束装置
公开(公告)号：US5591970A
公开(公告)日：1997-01-07
申请号：US527583
申请日：1995-09-13
申请人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
发明人： Haruki Komano , Akira Matsuura , Hiroko Nakamura , Kazuyoshi Sugihara
IPC分类号： G01Q30/08 , G03F1/30 , G03F1/72 , G03F1/74 , H01J37/305 , H01L21/203 , H01L21/302 , H01L21/31 , H01L21/316 , H01J37/30
CPC分类号： H01J37/3056 , H01J2237/006 , H01J2237/024 , H01J2237/31744
摘要： A charged beam apparatus of this invention comprises a sample table on which a sample is placed, a column for irradiating a charged beam on a surface of the sample, a gas supply mechanism having a gas supply opening for injecting a gas to an irradiated position of the charged beam, and a driving mechanism for moving the gas supply opening parallel to the surface of the sample in order to position the gas supply opening, and moving the gas supply opening perpendicularly to the surface of the sample in order to set a distance from the gas supply opening to a processing position. This allows the gas pressure to be stably held with a high accuracy at the processing position. Accordingly, desired deposition or etching can be performed with a high accuracy, and this further improves the quality of the mask.
摘要翻译：本发明的充电光束装置包括：样品台，放置样品的样品台;用于在样品表面照射带电束的色谱柱;气体供给机构，具有用于将气体注入照射位置的气体供给口带电束，以及用于使气体供给开口平行于样品表面移动以便定位气体供应开口的驱动机构，并且使气体供给开口垂直于样品的表面移动，以设定距离气体供应开口到处理位置。这样可以在加工位置高精度地稳定地保持气体压力。因此，可以高精度地进行期望的沉积或蚀刻，这进一步提高了掩模的质量。

5. 发明授权

US5799104A Mask defect repair system and method 失效
标题翻译：面膜缺陷修复系统及方法
公开(公告)号：US5799104A
公开(公告)日：1998-08-25
申请号：US670315
申请日：1996-08-22
申请人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
发明人： Hiroko Nakamura , Kazuyoshi Sugihara , Haruki Komano
IPC分类号： G03F1/32 , G03F1/72 , G06K9/00 , H01L21/027 , G03F9/00
CPC分类号： G03F1/26 , G03F1/74 , G03F1/32 , H01J2237/31742
摘要： A mask defect repair system which repairs, by irradiating a particle beam, a defect on a mask made of a transparent substrate and a mask material formed on the substrate, includes an imaging beam irradiation unit for two-dimensionally scanning and irradiating the beam for imaging on a surface of the mask, a detector for detecting a first intensity distribution of secondary particles emitted from the surface of the mask by irradiation of the beam for imaging, an image processing unit for performing image processing of at least part of the first intensity distribution of the secondary particles to prepare a second intensity distribution, an image display unit for displaying the first and second intensity distributions as an image, an external input unit for setting, on the image, a desired region to be processed with the beam, an irradiation region determination unit for determining, on the desired region to be processed, a beam irradiation region on the basis of the second intensity distribution, a repair beam irradiation unit for irradiating the beam for a defect repair on the beam irradiation region, and a gas supply unit for supplying an etching gas or a deposition gas to the surface of the mask.
摘要翻译：一种掩模缺陷修复系统，其通过照射粒子束，在由透明基板制成的掩模和形成在基板上的掩模材料上进行修补，包括：成像光束照射单元，用于二维扫描和照射成像用光束在掩模的表面上，具有检测器，用于通过照射用于成像的光束来检测从掩模的表面发射的二次粒子的第一强度分布;图像处理单元，用于执行至少部分第一强度分布的图像处理的第二强度分布，用于将第一和第二强度分布显示为图像的图像显示单元，用于在图像上设置要用光束处理的期望区域的外部输入单元，照射区域确定单元，用于基于第二强度dis来确定在待处理的所需区域上的束照射区域用于在束照射区域照射用于缺陷修复的光束的修复光束照射单元，以及用于将蚀刻气体或沉积气体供应到掩模的表面的气体供给单元。

6. 发明授权

US5807650A Photo mask and apparatus for repairing photo mask 失效
标题翻译：照片面具和修复照相机的设备
公开(公告)号：US5807650A
公开(公告)日：1998-09-15
申请号：US914809
申请日：1997-08-20
申请人： Haruki Komano , Hiroko Nakamura , Munehiro Ogasawara , Satoshi Masuda , Katsuya Okumura , Yoji Ogawa
发明人： Haruki Komano , Hiroko Nakamura , Munehiro Ogasawara , Satoshi Masuda , Katsuya Okumura , Yoji Ogawa
IPC分类号： G03F1/26 , G03F1/74 , G03F9/00
CPC分类号： G03F1/26 , G03F1/74
摘要： A method of repairing a defect existing on a photo mask comprising a transparent substrate and a mask pattern formed on the substrate, comprises steps of irradiating a focused ion beam toward the defect and supplying XeF.sub.2 gas to the defect, when an etching rate of the defect by the focused ion beam and XeF.sub.2 is 1.7 times greater than an etching rate by a sole irradiation of the focused ion beam.
摘要翻译：一种修复存在于光掩模上的缺陷的方法，包括透明基板和形成在基板上的掩模图案，包括以下步骤：当缺陷的蚀刻速率为缺陷时，将注入的离子束照射到缺陷并向缺陷提供XeF 2气体通过聚焦离子束和XeF2是通过单独照射聚焦离子束的蚀刻速率的1.7倍。

7. 发明授权

US06265323B1 Substrate processing method and apparatus 失效
公开(公告)号：US06265323B1
公开(公告)日：2001-07-24
申请号：US09255659
申请日：1999-02-23
申请人： Hiroko Nakamura , Shinichi Ito , Katsuya Okumura
发明人： Hiroko Nakamura , Shinichi Ito , Katsuya Okumura
IPC分类号： H01L21302
CPC分类号： H01L21/6715 , G03F7/3021
摘要： Disclosed herein is a method for processing a substrate. The method includes supplying a liquid agent such as a developer onto the surface of a substrate, bringing an upper surface of a film formed of the liquid agent into contact with a liquid agent holding member arranged so as to face the substrate, holding the liquid agent between the substrate and the liquid agent holding member, moving the substrate or the liquid agent holding member, or both, in parallel to the main surface of the substrate, while the main surface of the substrate is being treated with the liquid agent. Since the concentrations of reaction products and starting reaction materials become uniform in the liquid agent which contacts the substrate, the entire substrate can be processed uniformly.

8. 发明授权

US07148138B2 Method of forming contact hole and method of manufacturing semiconductor device 失效
标题翻译：形成接触孔的方法和制造半导体器件的方法
公开(公告)号：US07148138B2
公开(公告)日：2006-12-12
申请号：US10969996
申请日：2004-10-22
申请人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
发明人： Shoji Mimotogi , Hiroko Nakamura , Kazuya Fukuhara , Satoshi Tanaka , Soichi Inoue
IPC分类号： H01L21/4763
CPC分类号： G03F7/70425 , G03F7/70466 , H01L21/76816
摘要： A method of forming a contact hole on a substrate by using a projection aligner comprising a lighting system including a light source, an aperture, and a condenser lens, a photo mask on which light from the lighting system is incident, and a projection lens for projecting the light from the photo mask onto the substrate, comprises forming a first photosensitive resist film on the substrate; exposing the first photosensitive resist film by using a photo mask in which mask patterns are cyclically arranged in a first direction and a second direction which is orthogonal to the first direction and a first aperture having light transmission parts arranged symmetrically with respect to a center point in the first direction; developing the exposed first photosensitive resist film to form first lines and linear spaces; forming a second photosensitive resist film on the substrate; exposing the second photosensitive resist film by using the photo mask and a second aperture having light transmission parts arranged symmetrically with respect to a center point in the second direction; and developing the second photosensitive resist film to form second lines and linear spaces which are orthogonal to the first lines and linear spaces.
摘要翻译：一种通过使用包括光源，孔径和聚光透镜的照明系统的投影对准器在基板上形成接触孔的方法，来自照明系统的光入射的光掩模和用于将来自光掩模的光投射到基板上，包括在基板上形成第一光敏抗蚀剂膜; 通过使用掩模图案沿与第一方向正交的第一方向和第二方向循环布置的光掩模曝光第一光敏抗蚀剂膜，以及具有相对于中心点对称布置的光传输部分的第一孔第一个方向显影第一光敏抗蚀剂膜以形成第一线和线性空间; 在所述基板上形成第二光敏抗蚀剂膜; 通过使用光掩模曝光第二光敏抗蚀剂膜，并且具有相对于第二方向的中心点对称布置的透光部分的第二孔; 并显影第二光敏抗蚀剂膜以形成与第一线和线性空间正交的第二线和线性空间。

9. 发明授权

US5549995A Photomask and method of manufacturing the same 失效
标题翻译：光掩模及其制造方法
公开(公告)号：US5549995A
公开(公告)日：1996-08-27
申请号：US402656
申请日：1995-03-13
申请人： Satoshi Tanaka , Soichi Inoue , Hiroko Nakamura
发明人： Satoshi Tanaka , Soichi Inoue , Hiroko Nakamura
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , G03F9/00
CPC分类号： G03F1/30
摘要： A transmitting photomask includes an optically transparent substrate having a major surface on which a plurality of recesses are selectively formed and transmitting exposure light, a plurality of opaque materials formed on the portions of the major surface of the transparent substrate, other than the recesses and preventing the exposure light from passing therethrough, and a plurality of transmitting portions constituted of the recesses. Each of the recesses has side walls formed perpendicular to the major surface of the transparent substrate so as to substantially coincide with a corresponding end face of each of the opaque materials, and adjacent transmitting portions have different depths. A method of manufacturing a transmitting photomask, includes a step of forming an opaque film preventing exposure light from passing therethrough on an optically transparent substrate transmitting the exposure light, a step of forming a plurality of opening patterns for forming a transmitting portion on the opaque film and thus forming a plurality of opaque materials with remaining portions of the opaque film, and a step of forming a plurality of transmitting portions including recesses having different depths alternately by etching the transparent substrate through the opening patterns by use of anisotropic etching.
摘要翻译：发送光掩模包括具有主表面的光学透明基板，多个凹部被选择性地形成在其上并透射曝光光，多个不透明材料形成在透明基板的主表面的除了凹部之外的部分上，并防止来自其的曝光光，以及由凹部构成的多个透光部。每个凹部具有垂直于透明基板的主表面形成的侧壁，以便与每个不透明材料的相应端面基本上重合，并且相邻的透光部分具有不同的深度。一种发送光掩模的制造方法，其特征在于，包括以下步骤：在透光曝光用光学透明基板上形成防止曝光的透光的不透明膜，在不透明膜上形成多个用于形成透光部的开口图案的工序并且由此形成多个不透明材料，其余部分是不透明膜，以及通过使用各向异性蚀刻通过开口图案蚀刻透明基板而交替地形成包括具有不同深度的凹槽的多个透光部分的步骤。

10. 发明申请

US20090011370A1 PATTERN FORMING METHOD USING TWO LAYERS OF RESIST PATTERNS STACKED ONE ON TOP OF THE OTHER 审中-公开
标题翻译：使用两层电阻图案的图案形成方法
公开(公告)号：US20090011370A1
公开(公告)日：2009-01-08
申请号：US12136368
申请日：2008-06-10
申请人： Hiroko Nakamura , Koji Hashimoto , Soichi Inoue , Toshiya Kotani
发明人： Hiroko Nakamura , Koji Hashimoto , Soichi Inoue , Toshiya Kotani
IPC分类号： G03F7/22
CPC分类号： G03F7/0035 , G03F7/091
摘要： A pattern forming method using two layers of resist pattern stacked one on the other has been disclosed. First, a first resist pattern is formed on a to-be-processed film. The first resist pattern is slimmed. On the slimmed first resist pattern and to-be-processed film, a second resist pattern is formed. With the first and second resist patterns as a mask, the film is processed.
摘要翻译：已经公开了使用彼此堆叠的两层抗蚀剂图案的图案形成方法。首先，在被处理膜上形成第一抗蚀剂图案。第一种抗蚀剂图案纤薄。在细长的第一抗蚀剂图案和被处理膜上，形成第二抗蚀剂图案。利用第一和第二抗蚀剂图案作为掩模，处理该膜。

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