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1. 发明授权

US5474643A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5474643A
公开(公告)日：1995-12-12
申请号：US169551
申请日：1993-12-20
申请人： Junichi Arami , Tamio Endo , Shiro Koyama , Kazuo Kikuchi , Teruaki Shiraishi , Isahiro Hasegawa , Keiji Horioka , Haruo Okano , Katsuya Okumura
发明人： Junichi Arami , Tamio Endo , Shiro Koyama , Kazuo Kikuchi , Teruaki Shiraishi , Isahiro Hasegawa , Keiji Horioka , Haruo Okano , Katsuya Okumura
IPC分类号： H01J37/32 , H05H1/00 , H05H11/00
CPC分类号： H01J37/32431 , H01J2237/16
摘要： A plasma processing apparatus has a process chamber for receiving an article to be processed, a monitoring window forming part of the peripheral wall of the process chamber, a pressure leading-out port, gates, and a plasma generating device for forming an electric field and generating plasma in the process chamber. The process chamber is defined by the peripheral wall having a circular cross section. Members forming parts of the peripheral wall each have an inner face continuous with the surface of the peripheral wall and curved substantially at the same radius of curvature as the surface of the peripheral wall.
摘要翻译：等离子体处理装置具有用于接收被处理物的处理室，形成处理室的周壁的一部分的监视窗口，压力输出端口，栅极和用于形成电场的等离子体产生装置，在处理室中产生等离子体。处理室由具有圆形横截面的周壁限定。形成周壁的部件的部件各自具有与周壁的表面连续的内表面，并且基本上以与周壁的表面相同的曲率半径弯曲。

2. 发明授权

US5888338A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5888338A
公开(公告)日：1999-03-30
申请号：US827439
申请日：1997-03-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： The invention provides a novel magnetron plasma processing apparatus comprising the following, a vacuum chamber storing an etching object, the first electrode which is provided in the vacuum chamber and holds the etching object, the second electrode which is disposed in opposition from the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means which is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit which feeds power to either of these first and second electrodes and generates discharge between these parallel electrodes. Magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：本发明提供了一种新颖的磁控管等离子体处理装置，其特征在于包括：存储蚀刻对象的真空室，设置在真空室中并保持蚀刻对象物的第一电极，与第一电极相对配置的第二电极，其中所述第一和第二电极彼此平行;供给单元，向所述真空室供给蚀刻气体;磁场产生装置，设置在与所述第一电极相对的与所述第二电极相对的部分上; 以及向这些第一和第二电极中的任一个供电的电源单元，并在这些平行电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，与磁体的两端面之间设置与第二电极相对的平面凹部块。

3. 发明授权

US5660671A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5660671A
公开(公告)日：1997-08-26
申请号：US266635
申请日：1994-06-28
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： A magnetron plasma processing apparatus includes, a vacuum chamber storing an etching object, a first electrode which is provided in the vacuum chamber and holds the etching object, a second electrode which is disposed in opposition from the first electrode and parallel with the first electrode. A gas-supply unit feeding etching gas to the vacuum chamber while, a magnetic-field generating means is disposed on the part opposite from the first electrode in opposition from the second electrode, and a power-supply unit feeds power to either the first or second electrodes and generates discharge between the electrodes. The magnetic-field generating means is provided with a magnetic block whose both-end surfaces are provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between both-end surfaces of the magnetic block.
摘要翻译：磁控管等离子体处理装置包括：存储蚀刻对象的真空室;设置在真空室中并保持蚀刻对象物的第一电极;与第一电极相对设置并平行于第一电极的第二电极。气体供给单元，其向所述真空室供给蚀刻气体，同时在与所述第一电极相对的所述部分上配置有磁场产生单元，所述电源单元与所述第二电极相对，并且电源单元将功率供给到所述第一或第第二电极并在电极之间产生放电。磁场产生装置设置有磁性块，其两端表面设置有彼此极性相反的磁极，此外，在第二电极的两端面之间设置有与第二电极相对的平面凹部磁块。

4. 发明授权

US5376211A Magnetron plasma processing apparatus and processing method 失效
标题翻译：磁控管等离子体处理装置及加工方法
公开(公告)号：US5376211A
公开(公告)日：1994-12-27
申请号：US766324
申请日：1991-09-27
申请人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
发明人： Hiromi Harada , Sinji Kubota , Hiromi Kumagai , Junichi Arami , Keiji Horioka , Isahiro Hasegawa , Haruo Okano , Katsuya Okumura , Yukimasa Yoshida
IPC分类号： H01J37/32 , H01J37/34 , H01L21/302 , H01L21/00
CPC分类号： H01J37/32623 , H01J37/3266 , H01J37/3408 , H01J37/3452 , H01J37/3494 , H01J2237/3344
摘要： A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.
摘要翻译：一种磁控管等离子体处理装置，包括：存储待蚀刻对象物的真空室;设置在真空室内的用于保持物体的第一电极，设置在第一电极的一侧的第二电极，第一电极和第二电极平行彼此相连的气体供给单元向真空室供给蚀刻气体;磁场产生装置，包括设置在第二电极的相对侧的腔室外侧的磁性块，并且能够围绕与该物体保持的物体垂直的轴旋转第一电极和向第一和第二电极之一供电并在这些平行电极之间产生放电的电源单元。磁性块具有设置有彼此极性相反的磁极的端面，此外，在磁极之间设置与第二电极相反的平面凹部。

5. 发明授权

US5290381A Plasma etching apparatus 失效
标题翻译：等离子刻蚀装置
公开(公告)号：US5290381A
公开(公告)日：1994-03-01
申请号：US799056
申请日：1991-11-27
申请人： Toshihisa Nozawa , Junichi Arami , Keiji Horioka , Isahiro Hasegawa
发明人： Toshihisa Nozawa , Junichi Arami , Keiji Horioka , Isahiro Hasegawa
IPC分类号： H01L21/302 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/683
CPC分类号： H01L21/67069 , H01J37/32431 , H01L21/6838 , H01J2237/2001 , H01J2237/334
摘要： A plasma etching apparatus comprising a susceptor for holding a semiconductive wafer, a cooling jacket having a coolant of a large cooling capacity and capable of quickly cooling said susceptor to an intended low temperature, a process chamber enclosing the susceptor and the cooling jacket, a gas discharging mechanism for evacuating the process chamber, an insulating member interposed between the susceptor and the cooling jacket, a gas supply device for supplying gas to an O-ring holding groove arranged on the interface regions of the susceptor, the insulating member and the cooling section and a pressure control mechanism for controlling the pressure of the supplied gas.
摘要翻译：一种等离子体蚀刻装置，包括用于保持半导体晶片的基座，具有大冷却能力的冷却剂并能够快速地将所述基座冷却到预期低温的冷却套，封闭基座和冷却套的处理室，气体用于排出处理室的排出机构，插入在基座和冷却套之间的绝缘构件，用于将气体供给到设置在基座，绝缘构件和冷却区的界面区域上的O形环保持槽的气体供给装置以及用于控制供给气体的压力的压力控制机构。

6. 发明授权

US5387893A Permanent magnet magnetic circuit and magnetron plasma processing apparatus 失效
标题翻译：永磁磁路和磁控管等离子体处理装置
公开(公告)号：US5387893A
公开(公告)日：1995-02-07
申请号：US28230
申请日：1993-03-09
申请人： Masami Oguriyama , Haruo Okano , Isahiro Hasegawa , Junichi Arami , Hiromi Harada
发明人： Masami Oguriyama , Haruo Okano , Isahiro Hasegawa , Junichi Arami , Hiromi Harada
IPC分类号： H01F7/02 , H01J37/32 , C23C14/00
CPC分类号： H01J37/32082 , H01F7/0278 , H01J37/32623 , H01J37/3266 , H01J37/32678 , H01J37/32724 , H01J2237/334
摘要： A permanent magnet magnetic circuit comprises a main magnet block having a pair of opposite outer surfaces. A pair of main magnetic poles of opposite polarities are disposed on the respective outer surfaces of the main magnet block. The main magnet block is provided with a channel defined between the pair of outer surfaces and the channel has a pair of inner surfaces corresponding to the respective outer surfaces of the main magnet block. The main magnet block is also provided with a pair of oppositely polarized compensating magnetic poles arranged on the respective inner surfaces for controlling any vector of the magnetic field directed from one of the main magnetic pole to the other main magnetic pole. A pair of adjusting magnet blocks are arranged on the respective inner surfaces to adjust the magnetic field directed from one of the main magnetic poles to the other magnetic pole.
摘要翻译：永磁磁路包括具有一对相对的外表面的主磁体块。一对相对极性的主磁极设置在主磁体块的各个外表面上。主磁体块设置有限定在一对外表面之间的通道，并且通道具有对应于主磁体块的相应外表面的一对内表面。主磁体块还设置有一对相对极化的补偿磁极，其布置在各个内表面上，用于控制从主磁极之一引导到另一个主磁极的磁场的任何矢量。一对调整磁体块布置在各个内表面上，以调节从一个主磁极引导到另一个磁极的磁场。

7. 发明授权

US5221403A Support table for plate-like body and processing apparatus using the table 失效
标题翻译：使用表的板状体和加工装置的支撑台
公开(公告)号：US5221403A
公开(公告)日：1993-06-22
申请号：US732410
申请日：1991-07-18
申请人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Haruo Okano
发明人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Haruo Okano
IPC分类号： C23C14/50 , C23C14/54 , C23C16/458 , C23C16/509 , H01J37/34 , H01L21/00 , H01L21/683
CPC分类号： H01L21/67069 , C23C14/50 , C23C14/541 , C23C16/4586 , C23C16/509 , H01J37/3244 , H01J37/3408 , H01J37/3435 , H01L21/6838 , H01J2237/2001 , H01J2237/2007 , H01J2237/334
摘要： A wafer support table is provided in a vacuum chamber of a magnetron plasma etching apparatus. This support table includes a first member having a mechanism for adjusting the temperature of a wafer, a second member having an electrostatic chuck for supporting the wafer on its upper surface, and a gas supply mechanism for supplying a gas between the first and second members.

8. 发明授权

US5539179A Electrostatic chuck having a multilayer structure for attracting an object 失效
标题翻译：具有吸引物体的多层结构的静电吸盘
公开(公告)号：US5539179A
公开(公告)日：1996-07-23
申请号：US792592
申请日：1991-11-15
申请人： Toshihisa Nozawa , Junichi Arami , Shinji Kubota , Isahiro Hasegawa , Katsuya Okumura
发明人： Toshihisa Nozawa , Junichi Arami , Shinji Kubota , Isahiro Hasegawa , Katsuya Okumura
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00 , B23K10/00
CPC分类号： H02N13/00 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck for electrostatically holding a wafer is provided in a vacuum chamber formed in a magnetron plasma etching apparatus. The electrostatic chuck has a base member, a first insulating layer provided on the base member and made of polyimide, a second insulation layer made of AlN, a conductive sheet provided between first and second insulation layers, and an adhesive layer made of a thermosetting resin and adhering the first insulating layer to the second insulating layer. The wafer is placed on the second insulating layer, and power is supplied from a high voltage power supply to the conductive sheet via a feeding sheet, thereby creating static electricity and hence a coulombic force for holding the wafer on the second insulating layer.
摘要翻译：用于静电保持晶片的静电卡盘设置在形成在磁控管等离子体蚀刻装置中的真空室中。所述静电卡盘具有基材，在所述基材上设置的由聚酰亚胺构成的第一绝缘层，由AlN构成的第二绝缘层，设置在第一绝缘层和第二绝缘层之间的导电片，以及由热固性树脂并且将第一绝缘层粘合到第二绝缘层。将晶片放置在第二绝缘层上，并且通过馈电片从高压电源向导电片提供电力，从而产生静电，因此产生用于将晶片保持在第二绝缘层上的库仑力。

9. 发明授权

US5255153A Electrostatic chuck and plasma apparatus equipped therewith 失效
标题翻译：配备有静电卡盘和等离子体装置
公开(公告)号：US5255153A
公开(公告)日：1993-10-19
申请号：US731478
申请日：1991-07-17
申请人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Katsuya Okumura
发明人： Toshihisa Nozawa , Junichi Arami , Isahiro Hasegawa , Katsuya Okumura
IPC分类号： H01L21/683 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/6831 , H02N13/00
摘要： An electrostatic chuck having an electrostatic holding member arranged on an upper surface of the chuck main body for holding a semiconductor device during a plasma etching process. The electrostatic holding member includes a pair of insulating polyimide members and a conductive member interposed between the polyimide members. In operation, a voltage is applied to the first conductive member in order to generate static electricity to be applied to the electrostatic holding member for holding the semiconductor device.
摘要翻译：一种静电吸盘，其具有布置在卡盘主体的上表面上的静电保持构件，用于在等离子体蚀刻工艺期间保持半导体器件。静电保持构件包括一对绝缘聚酰亚胺构件和插入在聚酰亚胺构件之间的导电构件。在操作中，向第一导电构件施加电压，以产生施加到用于保持半导体器件的静电保持构件的静电。

10. 发明授权

US5250137A Plasma treating apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5250137A
公开(公告)日：1993-10-05
申请号：US731475
申请日：1991-07-17
申请人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
发明人： Junichi Arami , Toshihisa Nozawa , Keiji Horioka , Katsuya Okumura
IPC分类号： C23C14/40 , C23C14/50 , C23F4/00 , H01L21/00 , H01L21/302 , H01L21/3065 , H01L21/683 , B05C5/00
CPC分类号： H01L21/67069 , H01L21/6831
摘要： A plasma treating apparatus includes an electrostatic chuck constructing an electrically conductive layer and insulating layers having the conductive layer sandwiched therebetween. A RF current supplied to a susceptor is prevented from flowing into the conductive layer of the chuck so as to suppress the RF current leakage from a cable connected to the conductive layer of the chuck for high voltage application. The plasma treating apparatus includes a chamber having a first electrode, a second electrode disposed within the chamber, a cylindrical high frequency power supply member inserted from the outside into the chamber such that the tip of the member is connected to the second electrode, high frequency power supply means for supplying a high frequency power through the power supply member to the second electrode so as to generate a plasma in the region between the first and second electrodes within the chamber, an electrostatic chuck arranged on the second electrode and constructed such that a conductive layer is formed within an insulating layer, a cable for applying a high voltage, the cable being inserted into the power supply member and having the tip connected to the conductive layer of the electrostatic chuck, and a power source connected to the cable.
摘要翻译：等离子体处理装置包括构成导电层的静电卡盘和夹在其间的导电层的绝缘层。防止提供给基座的RF电流流入卡盘的导电层，以便抑制与电缆连接的电缆的RF电流泄漏，以用于高电压施加。等离子体处理装置包括具有第一电极，设置在室内的第二电极的室，从外部插入室的圆柱形高频电源构件，使得构件的尖端连接到第二电极，高频电源装置，用于通过所述电源构件向所述第二电极提供高频电力，以在所述室内的所述第一和第二电极之间的区域中产生等离子体;静电吸盘，其布置在所述第二电极上，导电层形成在绝缘层内，用于施加高电压的电缆，所述电缆插入到电源构件中，并且尖端连接到静电卡盘的导电层，以及连接到电缆的电源。

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