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    • 1. 发明授权
    • Defective pixel signal substitution in thermal imaging systems
    • 热成像系统中的像素信号替代不良
    • US5532484A
    • 1996-07-02
    • US304001
    • 1994-09-09
    • Kevin N. SweetserHoward R. BeratanRobert A. Owen
    • Kevin N. SweetserHoward R. BeratanRobert A. Owen
    • H04N5/217H04N5/33H04N5/367H04N7/18
    • H04N5/367H04N5/33
    • Thermal imaging system (10) includes a focal plane array (18) having pixels (20). Signals produced by pixels (20) are addressed by integrated circuit substrate (22) and passed to video processor (24). Video processor (24) includes, among other modules, a detection and substitution module (28) that detects defective pixels (21) and substitutes the signals produced by defective pixels (21). The detection and substitution of signals produced by defective pixels (21) may be performed while viewing the thermal scene (12) or while stimulating pixels (20) with a stimulus. A thermal stimulus may be generated by a thermoelectric cooler (50) thermally coupled to integrated circuit substrate (22) and focal plane array (18). An electrical stimulus to identify defective pixels (21) may also be delivered to pixels (20) of focal plane array (18).
    • 热成像系统(10)包括具有像素(20)的焦平面阵列(18)。 由像素(20)产生的信号由集成电路基板(22)寻址并传递到视频处理器(24)。 除了其他模块之外,视频处理器(24)还包括检测和替换由缺陷像素(21)产生的信号的检测和替代模块(28)。 可以在观看热场景(12)的同时或在刺激像素(20)的同时执行由缺陷像素(21)产生的信号的检测和替换。 可以由热耦合到集成电路基板(22)和焦平面阵列(18)的热电冷却器(50)产生热刺激。 用于识别缺陷像素(21)的电刺激也可以被传送到焦平面阵列(18)的像素(20)。
    • 3. 发明授权
    • Infrared detector thermal isolation structure and method
    • 红外探测器热隔离结构及方法
    • US5426304A
    • 1995-06-20
    • US182865
    • 1994-01-13
    • James F. BelcherRobert A. OwenCharles M. HansonHoward R. Beratan
    • James F. BelcherRobert A. OwenCharles M. HansonHoward R. Beratan
    • G01J1/02G01J5/02G01J5/12G01J5/34H01L37/02G01J5/06
    • H01L37/02
    • In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a corresponding focal plane array (30, 130, and 230) of thermal sensors (40, 140, and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flowpath (V.sub.s) for the respective thermal sensor (40 and 240). The mesa conductors (56, 58, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242 and 243) having a void space (277 and 279) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30, 130 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).
    • 在示例性热成像系统(20,120,220和320)中,热隔离结构(50和150)设置在集成电路衬底(70和170)上,用于电连接和机械地结合相应的焦平面阵列(30 ,130和230)热传感器(40,140和240)。 每个台面型结构(52,54和152)包括从台面型结构(52,54和152)的顶部延伸到相邻接触垫的至少一个台面导体(56,58,156和158) (72和74)。 台面导体(56,58,156和158)为相应的热传感器(40和240)提供偏压(VB)和相应的热传感器(40和240)的信号流路(Vs)。 台面导体(56,58,156和158)可用于向具有空隙空间(277和279)或一对铁电元件(42)的单个铁电元件(242和243)提供偏置电压(VB) 和44)。 当焦平面阵列(30,130和230)被结合到相应的台面型结构(52,54和152)阵列时,热隔离但是导电的路径被提供在电极(43和45)之间 热传感器(40和240)以及集成电路基板(70和74)的相应接触焊盘(72和172)。
    • 5. 发明授权
    • Infrared detector local biasing structure and method
    • 红外探测器局部偏置结构及方法
    • US5436450A
    • 1995-07-25
    • US182268
    • 1994-01-13
    • James F. BelcherRobert A. OwenCharles M. HansonHoward R. Beratan
    • James F. BelcherRobert A. OwenCharles M. HansonHoward R. Beratan
    • G01J1/02G01J5/48H01L37/02H04N5/33G01J5/06
    • H01L37/02
    • In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a focal plane array (30 and 230) of thermal sensors (40 and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flow path (V.sub.S) for the respective thermal sensor (40 and 240). The mesa conductors (56, 56, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).
    • 在示例性热成像系统(20,120,220和320)中,热隔离结构(50和150)设置在集成电路基板(70和170)上,用于电连接和机械地结合焦平面阵列(30和 230)的热传感器(40和240)。 每个台面型结构(52,54和152)包括从台面型结构(52,54和152)的顶部延伸到相邻接触垫的至少一个台面导体(56,58,156和158) (72和74)。 台面导体(56,58,156和158)为相应的热传感器(40和240)提供偏压(VB)和相应的热传感器(40和240)的信号流路(VS)。 台面导体(56,56,156和158)可用于向单个铁电元件(242)或一对铁电元件(42和44)提供偏置电压(VB)。 当焦平面阵列(30和230)被结合到对应的台面型结构(52,54和152)阵列时,在热传感器的电极(43和45)之间提供热隔离但是导电的路径 (40和240)以及集成电路基板(70和74)的对应的接触垫(72和172)。
    • 6. 发明授权
    • Thermal isolation of monolithic thermal detector
    • 单片热探测器的隔热
    • US6087661A
    • 2000-07-11
    • US959943
    • 1997-10-29
    • Robert A. OwenCharles M. HansonSteven N. FrankHoward R. BeratanScott R. Summerfelt
    • Robert A. OwenCharles M. HansonSteven N. FrankHoward R. BeratanScott R. Summerfelt
    • G01J5/10G01J5/20G01J5/22
    • G01J5/10G01J5/20
    • A thermal sensor (36, 84, 114) comprising a thermal assembly (44, 88, 118) and a signal flowpath (46, 90, 120). The thermal assembly (44, 88, 118) may comprise a thermally sensitive element (50) and a pair of electrodes (52, 54). The thermally sensitive element (50) may generate a signal representative of an amount of thermal radiation incident to the thermally sensitive element (50). The electrodes (52, 54) may collect the signal generated by the thermally sensitive element (50). The signal flowpath (46, 90, 120) may transmit the signal collected by the electrodes (52, 54) to the substrate (34, 82, 112). The signal flowpath (46, 90, 120) may comprise a pair of arms (56, 58, 92, 122) each extending from an electrode (52, 54) and be connected to the substrate (34, 82, 112). The arms (56, 58, 92, 122) may support the thermal assembly (44, 88, 118) in spaced relation with the substrate (34, 82, 112). The arms (56, 58, 92, 122) may be formed of a thermally insulating material.
    • 包括热组件(44,88,118)和信号流路(46,90,120)的热传感器(36,84,114)。 热组件(44,88,118)可以包括热敏元件(50)和一对电极(52,54)。 热敏元件(50)可以产生表示入射到热敏元件(50)的热辐射量的信号。 电极(52,54)可以收集由热敏元件(50)产生的信号。 信号流路(46,90,120)可以将由电极(52,54)收集的信号传送到基板(34,82,112)。 信号流路(46,90,120)可以包括一对臂(56,58,92,122),每对臂从电极(52,54)延伸并连接到衬底(34,82,112)。 臂(56,58,92,122)可以以与衬底(34,82,112)间隔开的关系支撑热组件(44,48,118)。 臂(56,58,92,122)可以由隔热材料形成。