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1. 发明授权

US5457318A Thermal detector apparatus and method using reduced thermal capacity 失效
标题翻译：热检测装置和使用降低热容量的方法
公开(公告)号：US5457318A
公开(公告)日：1995-10-10
申请号：US235413
申请日：1994-04-29
申请人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
发明人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
IPC分类号： G01J1/02 , G01J5/34 , G01J5/48 , H01L37/02 , H04N5/33 , G01J5/06
CPC分类号： G01J5/34 , H01L37/02 , Y10T29/49117 , Y10T29/49126 , Y10T29/49144
摘要： A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).
摘要翻译：热检测系统（10）包括焦平面阵列（12），热隔离结构（14）和集成电路基板（16）。焦平面阵列（12）包括热传感器（28），每个具有相关联的热敏元件（30）。热敏元件（30）与一侧耦合到红外线吸收器和公共电极组件（36），并且与设置在集成电路衬底（16）上的相关接触焊盘（20）的相对侧耦合。相邻的热敏元件（30a，30b，30c）与单个热敏元件（30a，30b，30c）的平均宽度（44,46）的至少一半的距离分开。可以在热敏元件（30a，30b，30c）上设置连续的非网状光学涂层（38），以最大程度地吸收入射到焦平面阵列（12）的热辐射。

2. 发明授权

US5604977A Method of fabricating focal plane array 失效
标题翻译：焦平面阵列的制作方法
公开(公告)号：US5604977A
公开(公告)日：1997-02-25
申请号：US478570
申请日：1995-06-07
申请人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
发明人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
IPC分类号： G01J1/02 , G01J5/34 , G01J5/48 , H01L37/02 , H04N5/33 , H01R43/00
CPC分类号： G01J5/34 , H01L37/02 , Y10T29/49117 , Y10T29/49126 , Y10T29/49144
摘要： A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).
摘要翻译：热检测系统（10）包括焦平面阵列（12），热隔离结构（14）和集成电路基板（16）。焦平面阵列（12）包括热传感器（28），每个具有相关联的热敏元件（30）。热敏元件（30）与一侧耦合到红外线吸收器和公共电极组件（36），并且与设置在集成电路衬底（16）上的相关接触焊盘（20）的相对侧耦合。相邻的热敏元件（30a，30b，30c）与单个热敏元件（30a，30b，30c）的平均宽度（44,46）的至少一半的距离分开。可以在热敏元件（30a，30b，30c）上设置连续的非网状光学涂层（38），以最大程度地吸收入射到焦平面阵列（12）的热辐射。

3. 发明授权

US5478242A Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
标题翻译：通过各向异性蚀刻对混合热探测器进行热隔离
公开(公告)号：US5478242A
公开(公告)日：1995-12-26
申请号：US236778
申请日：1994-04-29
申请人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
发明人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
IPC分类号： H01L27/146 , H01L37/02 , H01L31/18
CPC分类号： H01L37/02 , H01L27/1465
摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
摘要翻译：热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26）电路基板（12）。在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成（24），用于改善热隔离。凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。导体（108）沿着通孔（110）的壁和覆盖接触垫（104）沉积在台面型结构（102）的顶部上。使用导体（108）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料（118）以改善热隔离。

4. 发明授权

US5572059A Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
标题翻译：通过各向异性蚀刻对混合热探测器进行热隔离
公开(公告)号：US5572059A
公开(公告)日：1996-11-05
申请号：US477718
申请日：1995-06-07
申请人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
发明人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
IPC分类号： H01L27/146 , H01L37/02 , H01L27/095
CPC分类号： H01L37/02 , H01L27/1465
摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlaying contact pad (104). An anistropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
摘要翻译：热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26）电路基板（12）。在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成（24），用于改善热隔离。凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。导体（108）沿着通孔（110）的壁和覆盖接触焊盘（104）沉积在台面型结构（102）的顶部上。使用导体（108）作为蚀刻掩模的无捻蚀刻去除多余的台面材料（118）以改善热隔离。

5. 发明授权

US5424544A Inter-pixel thermal isolation for hybrid thermal detectors 失效
标题翻译：用于混合热探测器的像素间隔热隔离
公开(公告)号：US5424544A
公开(公告)日：1995-06-13
申请号：US235835
申请日：1994-04-29
申请人： Gail D. Shelton , James F. Belcher , Steven N. Frank , Charles M. Hanson , Edward G. Meissner , Robert A. Owen
发明人： Gail D. Shelton , James F. Belcher , Steven N. Frank , Charles M. Hanson , Edward G. Meissner , Robert A. Owen
IPC分类号： G01J5/34 , H01L37/02 , H04N5/33
CPC分类号： G01J5/34 , H01L37/02
摘要： A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.
摘要翻译：热检测系统（100,200）包括焦平面阵列（102,202），热隔离结构（104,204）和集成电路基板（106,206）。焦平面阵列（102,202）包括由热电元件（116,216）形成的热传感器（114,214），例如钛酸锶钡（BST）。热电元件（116,216）的一侧通过热隔离结构（104,210）的台面导体（112,212）耦合到设置在集成电路基板（106,206）上的接触焊盘（110,210），204）。热电元件（116,216）的另一侧耦合到公共电极（120,220）。在一个实施例中，槽（128）形成在热传感器（114）中间的公共电极（120）中，以改进像素间热隔离。在另一个实施例中，槽（236）形成在光学涂层（224）中以改进像素间热隔离。公共电极（120,220）可以由诸如一氧化硅和铬基体（金属陶瓷）或其它金属氧化物的绝热材料形成。

6. 发明授权

US5572029A Thermal isolation for hybrid thermal detectors 失效
公开(公告)号：US5572029A
公开(公告)日：1996-11-05
申请号：US488390
申请日：1995-06-07
申请人： William K. Walker , John P. Long , Robert A. Owen , Bert T. Runnels , Gail D. Shelton
发明人： William K. Walker , John P. Long , Robert A. Owen , Bert T. Runnels , Gail D. Shelton
IPC分类号： G01J5/20 , H01L37/02 , G01J5/10
CPC分类号： G01J5/20 , H01L37/02
摘要： A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.

7. 发明授权

US5574282A Thermal isolation for hybrid thermal detectors 失效
标题翻译：混合热探测器的热隔离
公开(公告)号：US5574282A
公开(公告)日：1996-11-12
申请号：US268365
申请日：1994-06-30
申请人： William K. Walker , John P. Long , Robert A. Owen , Bert T. Runnels , Gail D. Shelton
发明人： William K. Walker , John P. Long , Robert A. Owen , Bert T. Runnels , Gail D. Shelton
IPC分类号： G01J5/20 , H01L37/02 , G01J5/06
CPC分类号： G01J5/20 , H01L37/02
摘要： A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.
摘要翻译：混合热检测器（10,110）包括焦平面阵列（20,120），热隔离结构（40,140）和集成电路衬底（60,160）。焦平面阵列（20,120）包括热传感器（30,130）。热隔离结构（40,140）包括提供聚焦平面阵列的热隔离，信号传输和结构支撑的未整形的台面型结构（44,146,148）和台面状导体（42,142,144） 20，120）安装在集成电路基板（60,160）上。混合式热检测器（10）包括向所有热传感器（30）提供偏置电压的公共电极（28）。混合热检测器（110）具有电隔离的热传感器（130），每个热传感器（130）由台面状导体（142,144）支撑，其向热传感器（130）提供偏置电压并从其接收信号电压）。为了改进像素 - 衬底和像素间隔热隔离，台状导体（42,142,144）和公共电极（28）可以由绝热材料例如金属陶瓷或半导电材料形成。可以各向异性地蚀刻未成像的台面型结构（44,146,148）以去除多余的台面材料并改善像素 - 衬底热隔离。

8. 发明授权

US5578826A Thermal isolation for hybrid thermal detectors 失效
公开(公告)号：US5578826A
公开(公告)日：1996-11-26
申请号：US468159
申请日：1995-06-06
申请人： William K. Walker , John P. Long , Robert A. Owen , Bert T. Runnels , Gail D. Shelton
发明人： William K. Walker , John P. Long , Robert A. Owen , Bert T. Runnels , Gail D. Shelton
IPC分类号： G01J5/20 , H01L37/02 , G01J5/10
CPC分类号： G01J5/20 , H01L37/02
摘要： A hybrid thermal detector (10, 110) includes a focal plane array (20, 120), a thermal isolation structure (40, 140), and an integrated circuit substrate (60, 160). The focal plane array (20, 120) includes thermal sensors (30, 130). The thermal isolation structure (40, 140) includes untrimmed mesa-type formations (44, 146, 148) and mesa strip conductors (42, 142, 144) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120) when mounted on the integrated circuit substrate (60, 160). Hybrid thermal detector (10) includes a common electrode (28) which provides a bias voltage to all thermal sensors (30). Hybrid thermal detector (110) has electrically isolated thermal sensors (130), each thermal sensor (130) is supported by mesa strip conductors (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). To improve both pixel-substrate and inter-pixel thermal isolation, mesa strip conductors (42, 142, 144) and common electrode (28) may be formed from a thermally insulating material, such as cermet or a semiconductive material. Untrimmed mesa-type formations (44, 146, 148) may be anisotropically etched to remove excess mesa material and improve pixel-substrate thermal isolation.

9. 发明授权

US5426303A Thermal isolation structure for hybrid thermal detectors 失效
标题翻译：用于混合热探测器的隔热结构
公开(公告)号：US5426303A
公开(公告)日：1995-06-20
申请号：US235068
申请日：1994-04-29
申请人： Robert A. Owen , John P. Long , Bert T. Runnels , Gail D. Shelton , William K. Walker
发明人： Robert A. Owen , John P. Long , Bert T. Runnels , Gail D. Shelton , William K. Walker
IPC分类号： H01L37/02 , H04N5/33
CPC分类号： H01L37/02
摘要： A thermal detection system (10, 110, 210) includes a focal plane array (20, 120, 220), a thermal isolation structure (40, 140, 240), and an integrated circuit substrate (60, 160, 260). The focal plane array (20, 120, 220) includes a plurality of thermal sensors (30, 130, 230). The thermal isolation structure (40, 140, 240) includes mesa-type formations (44, 146, 148, 244) and bridge structures (42, 142, 144, 242) that provide thermal isolation, signal transport, and structural support of the focal plane array (20, 120, 220) when mounted on the integrated circuit substrate (60, 160, 260). Thermal detection system (10) includes an infrared absorber and common electrode assembly (22) which provides a bias voltage to all thermal sensors (30). Thermal detection system (110) has a plurality of electrically isolated thermal sensors (130), each thermal sensor (130) is supported by bridge structures (142, 144), which provide a bias voltage to and receive a signal voltage from the thermal sensor (130). Thermal detection system ( 220) has a plurality of electrically isolated thermal sensors (230), each thermal sensor (230) is electrically coupled to a pair of leads (246, 247), which are supported by a reinforcing layer (245). Bridge structures (42, 142, 144, 242) may be formed from a low thermal conductivity and adequate electrical conductivity material, such as silicon monoxide and chromium or other selected cermets.
摘要翻译：热检测系统（10,110,210）包括焦平面阵列（20,120,220），热隔离结构（40,140,240）和集成电路衬底（60,160,260）。焦平面阵列（20,120,220）包括多个热传感器（30,130,230）。热隔离结构（40,140,240）包括提供热隔离，信号传输和结构支撑的台面型结构（44,146,148,244）和桥结构（42,142,144,242）焦平面阵列（20,120,220），当安装在集成电路基板（60,160,260）上时。热检测系统（10）包括向所有热传感器（30）提供偏置电压的红外吸收器和公共电极组件（22）。热检测系统（110）具有多个电隔离的热传感器（130），每个热传感器（130）由桥结构（142,144）支撑，其提供偏置电压并从热传感器接收信号电压（130）。热检测系统（220）具有多个电隔离的热传感器（230），每个热传感器（230）电耦合到由加强层（245）支撑的一对引线（246,247）。桥结构（42,142,144,242）可以由低热导率和足够的导电性材料（例如一氧化硅和铬或其它选择的金属陶瓷）形成。

10. 发明授权

US06358819B1 Dual gate oxide process for deep submicron ICS 有权
公开(公告)号：US06358819B1
公开(公告)日：2002-03-19
申请号：US09212315
申请日：1998-12-15
申请人： Gail D. Shelton , Gayle W. Miller
发明人： Gail D. Shelton , Gayle W. Miller
IPC分类号： H01L2176
CPC分类号： H01L21/823462 , H01L21/823481 , Y10S148/163
摘要： An improved dual gate oxide process for dual-gated devices using oxygen ion implantation to vary the thickness of gate oxide layers. The desired layers are identified by photoresist layer patterning prior to an ion implantation. A subsequent heat treatment oxidizes the implanted region.

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