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1. 发明授权

US5646066A Method for forming electrical contact to the optical coating of an infrared detector from the backside of the detector 失效
标题翻译：从检测器的背面形成与红外探测器的光学涂层的电接触的方法
公开(公告)号：US5646066A
公开(公告)日：1997-07-08
申请号：US396944
申请日：1995-03-01
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L31/0216 , H01L31/0224 , H01L21/44
CPC分类号： H01L31/022408 , H01L31/02161 , Y10S148/08 , Y10S148/135 , Y10S438/977
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.
摘要翻译：这是形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22; 在热隔离槽22中沉积沟槽填料24; 在热隔离槽22上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械地使衬底变薄以暴露沟槽填料24; 蚀刻以去除偏压接触区域中的沟槽填料24; 在衬底20的背面沉积接触金属34，其中接触金属34在围绕热隔离沟槽的周边的偏置接触区域34处连接到公共电极层31; 并且蚀刻接触金属34和沟槽填充剂24以形成接触金属34和衬底20的像素台面。可以在偏置接触区域中形成偏置接触通孔23，然后用偏置接触金属49填充。或者，偏置接触通孔也可以用接触金属34填充。热隔离沟槽可以通过激光蒸发，离子研磨或其它等效方法形成。此外，可以在光学涂层和基板之间形成升高层，以提供更大的离子铣削公差。仰角层可以填充沟槽填料，然后在研磨后除去。或者，仰角层可以用金属49填充，以将偏置接触金属连接到偏置接触区域中的公共电极。

2. 发明授权

US5608254A Method for forming electrical contact to the optical coating of an infrared detector using conductive epoxy 失效
标题翻译：使用导电环氧树脂与红外检测器的光学涂层形成电接触的方法
公开(公告)号：US5608254A
公开(公告)日：1997-03-04
申请号：US473838
申请日：1995-06-07
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L21/60 , H01L31/0224 , H01L31/0232
CPC分类号： H01L31/022408 , H01L24/11 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01033 , H01L2924/01038 , H01L2924/01056 , H01L2924/01077 , H01L2924/01079 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/19041
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing conductive epoxy 50 into the bias contact vias 23; replanarizing; depositing a common electrode layer 31 over the thermal isolation trenches 22 and vias 23; depositing an optical coating 26 above the common electrode layer 31; mechanically polishing a backside of the substrate 20 to expose the trench filler 24 and conductive epoxy 50; depositing a contact metal 34 on the backside of the substrate 20; etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20.
摘要翻译：这是使用导电环氧树脂形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22和偏置接触通孔23; 在热隔离槽22中沉积沟槽填料24; 将导电环氧树脂50沉积到偏压接触通孔23中; 补充; 在热隔离槽22和通孔23上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械抛光衬底20的背面以暴露沟槽填料24和导电环氧树脂50; 在衬底20的背面沉积接触金属34; 蚀刻接触金属34和沟槽填料24以形成接触金属34和基板20的像素台面。

3. 发明授权

US5587090A Multiple level mask for patterning of ceramic materials 失效
标题翻译：用于陶瓷材料图案化的多层面罩
公开(公告)号：US5587090A
公开(公告)日：1996-12-24
申请号：US222146
申请日：1994-04-04
申请人： James F. Belcher , Steven N. Frank , John P. Long , Jeanee Jones
发明人： James F. Belcher , Steven N. Frank , John P. Long , Jeanee Jones
IPC分类号： G01J1/02 , B32B18/00 , C04B41/53 , C04B41/91 , H01L21/027 , H01L21/302 , H01L21/3065 , H01L27/14 , H01L27/146 , H01L37/02 , B44C1/22 , C03C15/00
CPC分类号： C04B41/009 , C04B41/5338 , C04B41/91 , H01L27/1465 , H01L37/02 , C04B2111/00844 , Y10S438/951
摘要： A novel multiple level mask (e.g. tri-level mask 36) process for masking achieves a desired thick mask with substantially vertical walls and thus improves the ion milling process of ceramic materials (e.g. BST). An embodiment of the present invention is a microelectronic structure comprising a ceramic substrate, an ion mill mask layer (e.g. photoresist 42) overlaying the substrate, a dry-etch-selective mask layer (e.g. TiW 40) overlaying the ion mill mask layer, the dry-etch-selective mask layer comprising a different material than the ion mill mask layer, a top photosensitive layer (38) overlaying the dry-etch-selective mask layer, the top photosensitive layer comprising a different material than the dry-etch-selective mask layer, and a predetermined pattern formed in the top photosensitive layer, the dry-etch-selective mask layer and the ion mill mask layer. The predetermined pattern has substantially vertical walls in the ion mill mask layer.
摘要翻译：用于掩蔽的新型多层掩模（例如三层掩模36）工艺实现了具有基本垂直壁的期望的厚掩模，因此改进了陶瓷材料（例如BST）的离子研磨过程。本发明的实施例是一种微电子结构，其包括陶瓷衬底，覆盖衬底的离子磨掩模层（例如光致抗蚀剂42），覆盖离子磨掩模层的干蚀刻选择性掩模层（例如TiW 40），干蚀刻选择性掩模层，其包括与离子磨掩模层不同的材料，覆盖干蚀刻选择性掩模层的顶部光敏层（38），顶部光敏层包含与干蚀刻选择性不同的材料掩模层和形成在顶部感光层中的预定图案，干蚀刻选择性掩模层和离子磨掩模层。该预定图案在离子磨掩模层中具有基本垂直的壁。

4. 发明授权

US5424544A Inter-pixel thermal isolation for hybrid thermal detectors 失效
标题翻译：用于混合热探测器的像素间隔热隔离
公开(公告)号：US5424544A
公开(公告)日：1995-06-13
申请号：US235835
申请日：1994-04-29
申请人： Gail D. Shelton , James F. Belcher , Steven N. Frank , Charles M. Hanson , Edward G. Meissner , Robert A. Owen
发明人： Gail D. Shelton , James F. Belcher , Steven N. Frank , Charles M. Hanson , Edward G. Meissner , Robert A. Owen
IPC分类号： G01J5/34 , H01L37/02 , H04N5/33
CPC分类号： G01J5/34 , H01L37/02
摘要： A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.
摘要翻译：热检测系统（100,200）包括焦平面阵列（102,202），热隔离结构（104,204）和集成电路基板（106,206）。焦平面阵列（102,202）包括由热电元件（116,216）形成的热传感器（114,214），例如钛酸锶钡（BST）。热电元件（116,216）的一侧通过热隔离结构（104,210）的台面导体（112,212）耦合到设置在集成电路基板（106,206）上的接触焊盘（110,210），204）。热电元件（116,216）的另一侧耦合到公共电极（120,220）。在一个实施例中，槽（128）形成在热传感器（114）中间的公共电极（120）中，以改进像素间热隔离。在另一个实施例中，槽（236）形成在光学涂层（224）中以改进像素间热隔离。公共电极（120,220）可以由诸如一氧化硅和铬基体（金属陶瓷）或其它金属氧化物的绝热材料形成。

5. 发明授权

US5623158A Infrared sensing device 失效
标题翻译：红外线感应装置
公开(公告)号：US5623158A
公开(公告)日：1997-04-22
申请号：US483771
申请日：1995-06-07
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/00 , H01L31/0232
CPC分类号： H01L31/022408 , H01L31/02161 , Y10S148/08 , Y10S148/135 , Y10S438/977
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.
摘要翻译：这是形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22; 在热隔离槽22中沉积沟槽填料24; 在热隔离槽22上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械地使衬底变薄以暴露沟槽填料24; 蚀刻以去除偏压接触区域中的沟槽填料24; 在衬底20的背面沉积接触金属34，其中接触金属34在围绕热隔离沟槽的周边的偏置接触区域34处连接到公共电极层31; 并且蚀刻接触金属34和沟槽填充剂24以形成接触金属34和衬底20的像素台面。可以在偏置接触区域中形成偏置接触通孔23，然后用偏置接触金属49填充。或者，偏置接触通孔也可以用接触金属34填充。热隔离沟槽可以通过激光蒸发，离子研磨或其它等效方法形成。此外，可以在光学涂层和基板之间形成升高层，以提供更大的离子铣削公差。仰角层可以填充沟槽填料，然后在研磨后除去。或者，仰角层可以用金属49填充，以将偏置接触金属连接到偏置接触区域中的公共电极。

6. 发明授权

US5577309A Method for forming electrical contact to the optical coating of an infrared detector 失效
标题翻译：与红外探测器的光学涂层形成电接触的方法
公开(公告)号：US5577309A
公开(公告)日：1996-11-26
申请号：US397512
申请日：1995-03-01
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： G01J5/34 , H01L37/02 , H01L31/18
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/928 , Y10T29/435 , Y10T29/49155
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 and contact vias 23 in a substrate 20; depositing a bias contact metal 32 into the vias 23 forming biasing contact areas around a periphery of the substrate 20; depositing a first trench filler 24 in the trenches 22 and vias 23; replanarizing; depositing a common electrode layer 25 over the thermal isolation trenches and the biasing contact areas; mechanically thinning the substrate 20 to expose the biasing contact area 32 and the trench filler 24; depositing a contact metal 34 on the backside of the substrate 20, the exposed trench filler 24 and the exposed bias contact area; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. The thermal isolation trenches 22 and the bias contact vias 23 may be formed by ion milling or laser vaporization. Alternately, the bias contact areas 23 may be formed by performing laser vaporization on the substrate 20 to produce conductive 23 areas within the substrate.
摘要翻译：这是形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22和接触通孔23; 将偏置接触金属32沉积到通孔23中，形成围绕基板20的周边的接触区域; 在沟槽22和通孔23中沉积第一沟槽填料24; 补充; 在热隔离沟槽和偏置接触区域上沉积公共电极层25; 机械地使基板20变薄以暴露偏压接触区域32和沟槽填料24; 在衬底20的背面沉积接触金属34，暴露的沟槽填料24和暴露的偏压接触区域; 并蚀刻接触金属34和沟槽填料24以形成接触金属34和衬底20的像素台面。热隔离沟槽22和偏置接触通孔23可以通过离子铣削或激光蒸发形成。或者，可以通过在衬底20上执行激光蒸发以在衬底内产生导电23区域来形成偏置接触区域23。

7. 发明授权

US5478242A Thermal isolation of hybrid thermal detectors through an anisotropic etch 失效
标题翻译：通过各向异性蚀刻对混合热探测器进行热隔离
公开(公告)号：US5478242A
公开(公告)日：1995-12-26
申请号：US236778
申请日：1994-04-29
申请人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
发明人： William K. Walker , Steven N. Frank , Charles M. Hanson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton
IPC分类号： H01L27/146 , H01L37/02 , H01L31/18
CPC分类号： H01L37/02 , H01L27/1465
摘要： A thermal isolation structure (10) is disposed between a focal plane array and an integrated circuit substrate (12). The thermal isolation structure (10) includes a mesa-type formation (16) and a mesa strip conductor (18, 26) extending from the top of the mesa-type formation (16) to an associated contact pad (14) on the integrated circuit substrate (12). After formation of the mesa-type formation (16) and the mesa strip conductor (18, 26), an anisotropic etch using the mesa strip conductor (18, 26) as an etch mask removes excess mesa material to form trimmed mesa-type formation (24) for improved thermal isolation. Bump bonding material (20) may be deposited on mesa strip conductor (18, 26) and can also be used as an etch mask during the anisotropic etch. Thermal isolation structure (100) can include mesa-type formations (102), each with a centrally located via (110) extending vertically to an associated contact pad (104) of integrated circuit substrate (106). A conductor (108) is deposited on top of mesa-type formation (102), along the walls of via (110), and overlying contact pad (104). An anisotropic etch using the conductor (108) as an etch mask removes excess mesa material (118) for improved thermal isolation.
摘要翻译：热隔离结构（10）设置在焦平面阵列和集成电路基板（12）之间。热隔离结构（10）包括从台面型结构（16）的顶部延伸到集成的台面型结构（16）的相关接触垫（14）的台面型结构（16）和台面状导体（18,26）电路基板（12）。在形成台面型结构（16）和台面状导体（18,26）之后，使用台面导体（18,26）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料以形成修整的台面形成（24），用于改善热隔离。凸起接合材料（20）可以沉积在台面状导体（18,26）上，并且也可以在各向异性蚀刻期间用作蚀刻掩模。热隔离结构（100）可以包括台面型结构（102），每个都具有垂直延伸到集成电路衬底（106）的相关接触焊盘（104）的中心定位的通孔（110）。导体（108）沿着通孔（110）的壁和覆盖接触垫（104）沉积在台面型结构（102）的顶部上。使用导体（108）作为蚀刻掩模的各向异性蚀刻去除多余的台面材料（118）以改善热隔离。

8. 发明授权

US5457318A Thermal detector apparatus and method using reduced thermal capacity 失效
标题翻译：热检测装置和使用降低热容量的方法
公开(公告)号：US5457318A
公开(公告)日：1995-10-10
申请号：US235413
申请日：1994-04-29
申请人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
发明人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
IPC分类号： G01J1/02 , G01J5/34 , G01J5/48 , H01L37/02 , H04N5/33 , G01J5/06
CPC分类号： G01J5/34 , H01L37/02 , Y10T29/49117 , Y10T29/49126 , Y10T29/49144
摘要： A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).
摘要翻译：热检测系统（10）包括焦平面阵列（12），热隔离结构（14）和集成电路基板（16）。焦平面阵列（12）包括热传感器（28），每个具有相关联的热敏元件（30）。热敏元件（30）与一侧耦合到红外线吸收器和公共电极组件（36），并且与设置在集成电路衬底（16）上的相关接触焊盘（20）的相对侧耦合。相邻的热敏元件（30a，30b，30c）与单个热敏元件（30a，30b，30c）的平均宽度（44,46）的至少一半的距离分开。可以在热敏元件（30a，30b，30c）上设置连续的非网状光学涂层（38），以最大程度地吸收入射到焦平面阵列（12）的热辐射。

9. 发明授权

US4264686A Graphite felt flowthrough electrode for fuel cell use 失效
标题翻译：用于燃料电池用途的石墨毡流通电极
公开(公告)号：US4264686A
公开(公告)日：1981-04-28
申请号：US82445
申请日：1979-10-09
申请人： Steven N. Frank
发明人： Steven N. Frank
IPC分类号： H01M4/86 , H01M4/96
CPC分类号： H01M4/86 , H01M4/96
摘要： An improved fuel cell electrode comprising a graphite felt substrate having a thin vapor deposited graphite film coating the exterior fiber surfaces and a perforated metallic backing plate having one surface coated with a noble material such as platinum.
摘要翻译：一种改进的燃料电池电极，其包括具有涂覆外部纤维表面的薄气相沉积石墨膜的石墨毡基材和具有涂覆有贵金属如铂的一个表面的穿孔金属背板。

10. 发明授权

US5552326A Method for forming electrical contact to the optical coating of an infrared detector using conductive epoxy 失效
标题翻译：使用导电环氧树脂与红外检测器的光学涂层形成电接触的方法
公开(公告)号：US5552326A
公开(公告)日：1996-09-03
申请号：US397706
申请日：1995-03-01
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L21/60 , H01L31/0224 , H01L31/18 , H01L21/58
CPC分类号： H01L31/022408 , H01L24/11 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01033 , H01L2924/01038 , H01L2924/01056 , H01L2924/01077 , H01L2924/01079 , H01L2924/10329 , H01L2924/12042 , H01L2924/14 , H01L2924/19041
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing conductive epoxy 50 into the bias contact vias 23; replanarizing; depositing a common electrode layer 31 over the thermal isolation trenches 22 and vias 23; depositing an optical coating 26 above the common electrode layer 31; mechanically polishing a backside of the substrate 20 to expose the trench filler 24 and conductive epoxy 50; depositing a contact metal 34 on the backside of the substrate 20; etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20.
摘要翻译：这是使用导电环氧树脂形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22和偏置接触通孔23; 在热隔离槽22中沉积沟槽填料24; 将导电环氧树脂50沉积到偏压接触通孔23中; 补充; 在热隔离槽22和通孔23上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械抛光衬底20的背面以暴露沟槽填料24和导电环氧树脂50; 在衬底20的背面沉积接触金属34; 蚀刻接触金属34和沟槽填料24以形成接触金属34和基板20的像素台面。

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