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1. 发明授权

US5426304A Infrared detector thermal isolation structure and method 失效
标题翻译：红外探测器热隔离结构及方法
公开(公告)号：US5426304A
公开(公告)日：1995-06-20
申请号：US182865
申请日：1994-01-13
申请人： James F. Belcher , Robert A. Owen , Charles M. Hanson , Howard R. Beratan
发明人： James F. Belcher , Robert A. Owen , Charles M. Hanson , Howard R. Beratan
IPC分类号： G01J1/02 , G01J5/02 , G01J5/12 , G01J5/34 , H01L37/02 , G01J5/06
CPC分类号： H01L37/02
摘要： In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a corresponding focal plane array (30, 130, and 230) of thermal sensors (40, 140, and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flowpath (V.sub.s) for the respective thermal sensor (40 and 240). The mesa conductors (56, 58, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242 and 243) having a void space (277 and 279) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30, 130 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).
摘要翻译：在示例性热成像系统（20,120,220和320）中，热隔离结构（50和150）设置在集成电路衬底（70和170）上，用于电连接和机械地结合相应的焦平面阵列（30 ，130和230）热传感器（40,140和240）。每个台面型结构（52,54和152）包括从台面型结构（52,54和152）的顶部延伸到相邻接触垫的至少一个台面导体（56,58,156和158）（72和74）。台面导体（56,58,156和158）为相应的热传感器（40和240）提供偏压（VB）和相应的热传感器（40和240）的信号流路（Vs）。台面导体（56,58,156和158）可用于向具有空隙空间（277和279）或一对铁电元件（42）的单个铁电元件（242和243）提供偏置电压（VB）和44）。当焦平面阵列（30,130和230）被结合到相应的台面型结构（52,54和152）阵列时，热隔离但是导电的路径被提供在电极（43和45）之间热传感器（40和240）以及集成电路基板（70和74）的相应接触焊盘（72和172）。

2. 发明授权

US5436450A Infrared detector local biasing structure and method 失效
标题翻译：红外探测器局部偏置结构及方法
公开(公告)号：US5436450A
公开(公告)日：1995-07-25
申请号：US182268
申请日：1994-01-13
申请人： James F. Belcher , Robert A. Owen , Charles M. Hanson , Howard R. Beratan
发明人： James F. Belcher , Robert A. Owen , Charles M. Hanson , Howard R. Beratan
IPC分类号： G01J1/02 , G01J5/48 , H01L37/02 , H04N5/33 , G01J5/06
CPC分类号： H01L37/02
摘要： In an exemplary thermal imaging system (20, 120, 220 and 320), a thermal isolation structure (50 and 150) is disposed on an integrated circuit substrate (70 and 170) for electrically connecting and mechanically bonding a focal plane array (30 and 230) of thermal sensors (40 and 240). Each mesa-type structure (52, 54 and 152) includes at least one mesa conductor (56, 58, 156 and 158) that extends from the top of the mesa-type structure (52, 54 and 152) to an adjacent contact pad (72 and 74). The mesa conductors (56, 58, 156 and 158) provide both biasing voltage (V.sub.B) for the respective thermal sensor (40 and 240) and a signal flow path (V.sub.S) for the respective thermal sensor (40 and 240). The mesa conductors (56, 56, 156 and 158) may be used to provide biasing voltage (V.sub.B) to either a single ferroelectric element (242) or a pair of ferroelectric elements (42 and 44). When the focal plane array (30 and 230) is bonded to the corresponding array of mesa-type structures (52, 54 and 152), a thermally isolated, but electrically conductive path is provided between electrodes (43 and 45) of the thermal sensor (40 and 240) and the corresponding contact pad (72 and 172) of the integrated circuit substrate (70 and 74).
摘要翻译：在示例性热成像系统（20,120,220和320）中，热隔离结构（50和150）设置在集成电路基板（70和170）上，用于电连接和机械地结合焦平面阵列（30和 230）的热传感器（40和240）。每个台面型结构（52,54和152）包括从台面型结构（52,54和152）的顶部延伸到相邻接触垫的至少一个台面导体（56,58,156和158）（72和74）。台面导体（56,58,156和158）为相应的热传感器（40和240）提供偏压（VB）和相应的热传感器（40和240）的信号流路（VS）。台面导体（56,56,156和158）可用于向单个铁电元件（242）或一对铁电元件（42和44）提供偏置电压（VB）。当焦平面阵列（30和230）被结合到对应的台面型结构（52,54和152）阵列时，在热传感器的电极（43和45）之间提供热隔离但是导电的路径（40和240）以及集成电路基板（70和74）的对应的接触垫（72和172）。

3. 发明授权

US5457318A Thermal detector apparatus and method using reduced thermal capacity 失效
标题翻译：热检测装置和使用降低热容量的方法
公开(公告)号：US5457318A
公开(公告)日：1995-10-10
申请号：US235413
申请日：1994-04-29
申请人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
发明人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
IPC分类号： G01J1/02 , G01J5/34 , G01J5/48 , H01L37/02 , H04N5/33 , G01J5/06
CPC分类号： G01J5/34 , H01L37/02 , Y10T29/49117 , Y10T29/49126 , Y10T29/49144
摘要： A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).
摘要翻译：热检测系统（10）包括焦平面阵列（12），热隔离结构（14）和集成电路基板（16）。焦平面阵列（12）包括热传感器（28），每个具有相关联的热敏元件（30）。热敏元件（30）与一侧耦合到红外线吸收器和公共电极组件（36），并且与设置在集成电路衬底（16）上的相关接触焊盘（20）的相对侧耦合。相邻的热敏元件（30a，30b，30c）与单个热敏元件（30a，30b，30c）的平均宽度（44,46）的至少一半的距离分开。可以在热敏元件（30a，30b，30c）上设置连续的非网状光学涂层（38），以最大程度地吸收入射到焦平面阵列（12）的热辐射。

4. 发明授权

US5604977A Method of fabricating focal plane array 失效
标题翻译：焦平面阵列的制作方法
公开(公告)号：US5604977A
公开(公告)日：1997-02-25
申请号：US478570
申请日：1995-06-07
申请人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
发明人： James E. Robinson , James F. Belcher , Howard R. Beratan , Steven N. Frank , Charles M. Hanson , Paul O. Johnson , Robert J. S. Kyle , Edward G. Meissner , Robert A. Owen , Gail D. Shelton , William K. Walker
IPC分类号： G01J1/02 , G01J5/34 , G01J5/48 , H01L37/02 , H04N5/33 , H01R43/00
CPC分类号： G01J5/34 , H01L37/02 , Y10T29/49117 , Y10T29/49126 , Y10T29/49144
摘要： A thermal detection system (10) includes a focal plane array (12), a thermal isolation structure (14), and an integrated circuit substrate (16). Focal plane array (12) includes thermal sensors (28), each having an associated thermal sensitive element (30). Thermal sensitive element (30) is coupled with one side to infrared absorber and common electrode assembly (36) and on the opposite side to an associated contact pad (20) disposed on the integrated circuit substrate (16). Reticulation kerfs (52a, 52b) separate adjacent thermal sensitive elements (30a, 30b, 30c) by a distance at least half the average width (44, 46) of a single thermal sensitive element (30a, 30b, 30c). A continuous, non-reticulated optical coating (38) may be disposed over thermal sensitive elements (30a, 30b, 30c) to maximize absorption of thermal radiation incident to focal plane array (12).
摘要翻译：热检测系统（10）包括焦平面阵列（12），热隔离结构（14）和集成电路基板（16）。焦平面阵列（12）包括热传感器（28），每个具有相关联的热敏元件（30）。热敏元件（30）与一侧耦合到红外线吸收器和公共电极组件（36），并且与设置在集成电路衬底（16）上的相关接触焊盘（20）的相对侧耦合。相邻的热敏元件（30a，30b，30c）与单个热敏元件（30a，30b，30c）的平均宽度（44,46）的至少一半的距离分开。可以在热敏元件（30a，30b，30c）上设置连续的非网状光学涂层（38），以最大程度地吸收入射到焦平面阵列（12）的热辐射。

5. 发明授权

US5424544A Inter-pixel thermal isolation for hybrid thermal detectors 失效
标题翻译：用于混合热探测器的像素间隔热隔离
公开(公告)号：US5424544A
公开(公告)日：1995-06-13
申请号：US235835
申请日：1994-04-29
申请人： Gail D. Shelton , James F. Belcher , Steven N. Frank , Charles M. Hanson , Edward G. Meissner , Robert A. Owen
发明人： Gail D. Shelton , James F. Belcher , Steven N. Frank , Charles M. Hanson , Edward G. Meissner , Robert A. Owen
IPC分类号： G01J5/34 , H01L37/02 , H04N5/33
CPC分类号： G01J5/34 , H01L37/02
摘要： A thermal detection system (100, 200) includes a focal plane array (102, 202), a thermal isolation structure (104, 204) and an integrated circuit substrate (106, 206). The focal plane array (102, 202) includes thermal sensors (114, 214) formed from a pyroelectric element (116, 216), such as barium strontium titanate (BST). One side of the pyroelectric element (116, 216) is coupled to a contact pad (110, 210) disposed on the integrated circuit substrate (106, 206) through a mesa strip conductor (112, 212) of the thermal isolation structure (104, 204). The other side of the pyroelectric element (116, 216) is coupled to a common electrode (120, 220). In one embodiment, slots (128) are formed in the common electrode (120) intermediate the thermal sensors (114) to improve inter-pixel thermal isolation. In another embodiment, slots (236) are formed in the optical coating (224) to improve inter-pixel thermal isolation. The common electrode (120, 220) may be formed from a thermally insulating material, such as a silicon monoxide and chromium matrix (cermet) or other metal oxide.
摘要翻译：热检测系统（100,200）包括焦平面阵列（102,202），热隔离结构（104,204）和集成电路基板（106,206）。焦平面阵列（102,202）包括由热电元件（116,216）形成的热传感器（114,214），例如钛酸锶钡（BST）。热电元件（116,216）的一侧通过热隔离结构（104,210）的台面导体（112,212）耦合到设置在集成电路基板（106,206）上的接触焊盘（110,210），204）。热电元件（116,216）的另一侧耦合到公共电极（120,220）。在一个实施例中，槽（128）形成在热传感器（114）中间的公共电极（120）中，以改进像素间热隔离。在另一个实施例中，槽（236）形成在光学涂层（224）中以改进像素间热隔离。公共电极（120,220）可以由诸如一氧化硅和铬基体（金属陶瓷）或其它金属氧化物的绝热材料形成。

6. 发明授权

US5654580A Semiconductor structure for fabrication of a thermal sensor 失效
标题翻译：用于制造热传感器的半导体结构
公开(公告)号：US5654580A
公开(公告)日：1997-08-05
申请号：US464981
申请日：1995-06-05
申请人： Howard R. Beratan , James F. Belcher , Scott R. Summerfelt
发明人： Howard R. Beratan , James F. Belcher , Scott R. Summerfelt
IPC分类号： C23F1/02 , G01J5/20 , H01L37/02 , H01L31/058
CPC分类号： C23F1/02 , G01J5/20 , H01L37/02
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译：使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53））和触点（49,56,64）。

7. 发明授权

US5746930A Method and structure for forming an array of thermal sensors 失效
标题翻译：形成热传感器阵列的方法和结构
公开(公告)号：US5746930A
公开(公告)日：1998-05-05
申请号：US368068
申请日：1995-01-03
申请人： James F. Belcher , Howard R. Beratan , Scott R. Summerfelt
发明人： James F. Belcher , Howard R. Beratan , Scott R. Summerfelt
IPC分类号： G01J1/02 , G01J5/02 , G01J5/34 , H01L37/02 , G01J5/06 , C23F1/00
CPC分类号： G01J5/34 , H01L37/02
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).
摘要翻译：热敏元件阵列（16）可以由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。第一层导电触头（60）被形成以限定衬底（46）的一部分屏蔽（61）和未屏蔽（68）区域。可以在第一层触点（60）上形成第二层导电触点（62）。形成掩模层（66）以封装第二层触点（62）的暴露部分。未掩蔽区域（68）暴露于蚀刻剂（70）并被照射以显着增加未掩模区域（68）和蚀刻剂（70）之间的反应性，使得在照射期间，蚀刻剂（70）去除未掩蔽区域（68））比第一层触点（60）和掩模层（66）快得多。

8. 发明授权

US5603848A Method for etching through a substrate to an attached coating 失效
标题翻译：通过基板蚀刻到附着涂层的方法
公开(公告)号：US5603848A
公开(公告)日：1997-02-18
申请号：US367641
申请日：1995-01-03
申请人： Howard R. Beratan , James F. Belcher , Scott R. Summerfelt
发明人： Howard R. Beratan , James F. Belcher , Scott R. Summerfelt
IPC分类号： C23F1/02 , G01J5/20 , H01L37/02 , B44C1/22 , C03C19/00 , C03C25/06 , C23F1/00
CPC分类号： C23F1/02 , G01J5/20 , H01L37/02
摘要： An etching process is provided using electromagnetic radiation and a selected etchant (52) to selectively remove various types of materials (53) from a substrate (48). Contacts (49, 56, 64) may be formed to shield the masked regions (51) of the substrate (48) having an attached coating (20) during irradiation of the unmasked regions (53) of the substrate (48). The unmasked regions (53) are then exposed to an etchant (52) and irradiated to substantially increase their reactivity with the etchant (52) such that the etchant (52) etches the unmasked regions (53) substantially faster than the masked regions (51) and the contacts (49, 56, 64).
摘要翻译：使用电磁辐射和选择的蚀刻剂（52）提供蚀刻工艺，以从衬底（48）中选择性地去除各种类型的材料（53）。可以形成接触件（49,56,64），用于在衬底（48）的未掩模区域（53）的照射期间屏蔽具有附着涂层（20）的衬底（48）的被掩蔽区域（51）。然后将未掩蔽区域（53）暴露于蚀刻剂（52）并照射以显着增加其与蚀刻剂（52）的反应性，使得蚀刻剂（52）基本上比掩蔽区域（51）蚀刻未掩模区域（53））和触点（49,56,64）。

9. 发明授权

US5647946A Structure and method including dry etching techniques for forming an array of thermal sensitive elements 失效
标题翻译：包括用于形成热敏元件阵列的干蚀刻技术的结构和方法
公开(公告)号：US5647946A
公开(公告)日：1997-07-15
申请号：US463170
申请日：1995-06-05
申请人： James F. Belcher , Howard R. Beratan , Scott R. Summerfelt
发明人： James F. Belcher , Howard R. Beratan , Scott R. Summerfelt
IPC分类号： G01J1/02 , G01J5/34 , H01L21/302 , H01L21/3065 , H01L27/14 , H01L37/02 , H01L21/00
CPC分类号： H01L37/02 , G01J5/34 , Y10S438/942
摘要： An array of thermal sensor elements (16) is formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of metal contacts (60) is formed to define masked (61) and unmasked (68) regions of the substrate (46). A second layer of metal contacts (62) is formed on the first layer of contacts (60). A radiation etch mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). A dry-etch mask layer (74) is formed to encapsulate the exposed portions of the first layer of contacts (60) and radiation etch mask layer (66). An initial portion of each unmasked region (68) is etched using a dry-etch process. The remaining portions of the unmasked regions (68) are exposed to an etchant (70) and irradiated with electromagnetic energy to substantially increase the reactivity between the remaining portions and the etchant (70). During such irradiation, the etchant (70) etches the remaining portions substantially faster than the first layer of contacts (60) and the radiation etch mask layer (66).
摘要翻译：一组热传感器元件（16）由具有红外线吸收器和附接到其上的公共电极组件（18）的热电基片（46）形成。第一层金属触点（60）被形成以限定衬底（46）的掩模（61）和未屏蔽（68）区域。第二层金属触点（62）形成在第一层触点（60）上。形成辐射蚀刻掩模层（66）以封装第二层触点（62）的暴露部分。形成干蚀刻掩模层（74）以封装第一层触点（60）和辐射蚀刻掩模层（66）的暴露部分。使用干蚀刻工艺蚀刻每个未掩模区域（68）的初始部分。未掩蔽区域（68）的剩余部分暴露于蚀刻剂（70）并用电磁能照射，以显着增加其余部分和蚀刻剂（70）之间的反应性。在这种照射期间，蚀刻剂（70）基本上比第一层触点（60）和辐射蚀刻掩模层（66）更快地蚀刻剩余部分。

10. 发明授权

US5792377A Method and structure for forming an array of thermal sensors 失效
公开(公告)号：US5792377A
公开(公告)日：1998-08-11
申请号：US460281
申请日：1995-06-02
申请人： James F. Belcher , Howard R. Beratan , Scott R. Summerfelt
发明人： James F. Belcher , Howard R. Beratan , Scott R. Summerfelt
IPC分类号： G01J1/02 , G01J5/02 , G01J5/34 , H01L37/02 , B44C1/22 , G01J5/06
CPC分类号： G01J5/34 , H01L37/02
摘要： An array of thermal sensitive elements (16) may be formed from a pyroelectric substrate (46) having an infrared absorber and common electrode assembly (18) attached thereto. A first layer of electrically conductive contacts (60) is formed to define in part masked (61) and unmasked (68) regions of the substrate (46). A second layer of electrically conductive contacts (62) may be formed on the first layer of contacts (60). A mask layer (66) is formed to encapsulate the exposed portions of the second layer of contacts (62). The unmasked regions (68) are exposed to an etchant (70) and irradiated to substantially increase the reactivity between the unmasked regions (68) and the etchant (70) such that during irradiation, the etchant (70) removes the unmasked regions (68) substantially faster than the first layer of contacts (60) and the mask layer (66).

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