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1. 发明申请

US20110063871A1 Multi-Wavelength Light Emitting Device 有权
标题翻译：多波长发光器件
公开(公告)号：US20110063871A1
公开(公告)日：2011-03-17
申请号：US12849352
申请日：2010-08-03
申请人： Kenichi TANAKA , Masahiro Aoki , Tsukuru Ohtoshi
发明人： Kenichi TANAKA , Masahiro Aoki , Tsukuru Ohtoshi
IPC分类号： H01S3/00 , F21V1/00 , G02B6/04
CPC分类号： G02B6/4204 , G02B27/0994 , G02B27/1006 , G02B27/104 , G02B27/123 , H01S5/02212 , H01S5/02284 , H01S5/4012 , H01S5/4093 , H04N9/3129 , H04N9/3161
摘要： A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.
摘要翻译：多波长发光器件包括以下三个部分; 具有发射多个光束的多个发光点的光源部分，聚集从发光点发射的光束的聚光透镜部分和在发射之后叠加并混合由聚光透镜部分聚集的光束的导光部分来自发光点。

2. 发明授权

US08449160B2 Multi-wavelength light emitting device 有权
标题翻译：多波长发光装置
公开(公告)号：US08449160B2
公开(公告)日：2013-05-28
申请号：US12849352
申请日：2010-08-03
申请人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
发明人： Kenichi Tanaka , Masahiro Aoki , Tsukuru Ohtoshi
IPC分类号： F21V7/04
CPC分类号： G02B6/4204 , G02B27/0994 , G02B27/1006 , G02B27/104 , G02B27/123 , H01S5/02212 , H01S5/02284 , H01S5/4012 , H01S5/4093 , H04N9/3129 , H04N9/3161
摘要： A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.
摘要翻译：多波长发光器件包括以下三个部分; 具有发射多个光束的多个发光点的光源部分，聚集从发光点发射的光束的聚光透镜部分和在发射之后叠加并混合由聚光透镜部分聚集的光束的导光部分来自发光点。

3. 发明授权

US07668217B2 Semiconductor laser diode device 失效
标题翻译：半导体激光二极管器件
公开(公告)号：US07668217B2
公开(公告)日：2010-02-23
申请号：US11882055
申请日：2007-07-30
申请人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
发明人： Katsumi Kishino , Ichiro Nomura , Tsunenori Asatsuma , Hitoshi Nakamura , Tsukuru Ohtoshi , Takeshi Kikawa , Sumiko Fujisaki , Shigehisa Tanaka
IPC分类号： H01S3/04 , H01S5/00
CPC分类号： H01S5/327 , B82Y20/00 , H01S5/22 , H01S5/3213 , H01S5/3216 , H01S5/347 , H01S2301/173 , H01S2304/02
摘要： The present invention provides a Be-based group II-VI semiconductor laser using an InP substrate and having a stacked structure capable of continuous oscillation at a room temperature. A basic structure of a semiconductor laser is constituted by using a Be-containing lattice-matched II-VI semiconductor above an InP substrate. An active laser, an optical guide layer, and a cladding layer are constituted in a double hetero structure having a type I band line-up in order to enhance the injection efficiency of carriers to the active layer. Also, the active layer, the optical guide layer, and the cladding layer, which are capable of enhancing the optical confinement to the active layer, are constituted, and the cladding layer is constituted with bulk crystals.
摘要翻译：本发明提供一种使用InP衬底并具有能够在室温下连续振荡的层叠结构的基于II族的II-VI族半导体激光器。通过在InP衬底上使用含Be的晶格匹配的II-VI半导体构成半导体激光器的基本结构。活性激光器，光导层和包覆层以具有I型带阵列的双异质结构构成，以提高载流子对活性层的注入效率。此外，构成能够增强对有源层的光学限制的有源层，导光层和包层，并且包层由块状晶体构成。

4. 发明授权

US06635908B2 Burying type avalanche photodiode and fabrication method thereof 有权
标题翻译：埋地型雪崩光电二极管及其制造方法
公开(公告)号：US06635908B2
公开(公告)日：2003-10-21
申请号：US09942737
申请日：2001-08-31
申请人： Shigehisa Tanaka , Yasunobu Matsuoka , Kazuhiro Ito , Tomohiro Ohno , Sumiko Fujisaki , Akira Taike , Tsukuru Ohtoshi , Shinji Tsuji
发明人： Shigehisa Tanaka , Yasunobu Matsuoka , Kazuhiro Ito , Tomohiro Ohno , Sumiko Fujisaki , Akira Taike , Tsukuru Ohtoshi , Shinji Tsuji
IPC分类号： H01L310328
CPC分类号： H01L31/1075 , H01L31/02161 , H01L31/035281 , Y02E10/50
摘要： The object of disclosing the novel art consists in providing a highly reliable mesa-structured avalanche photo-diode using a novel structure capable of keeping the dark current low, and a fabrication method thereof. The avalanche photo-diode for achieving the object has an absorption layer for absorbing light to generate a carrier, a multiplication layer for multiplying the generated carrier, and a field control layer inserted between the absorption layer and the multiplication layer. Moreover, a first mesa including at least part of the multiplication layer and part of the field control layer is formed over a substrate, a second mesa including another part of the field control layer and the absorption layer is formed over the first mesa, the area of the top surface of the first mesa is greater than that of the bottom surface of the second mesa, and a semiconductor layer is formed over the part of the first mesa top surface not covered by the second mesa and the side surface of the second mesa.
摘要翻译：公开新技术的目的在于提供一种使用能够保持暗电流低的新型结构的高度可靠的台面结构的雪崩光电二极管及其制造方法。用于实现物体的雪崩光电二极管具有用于吸收光以产生载流子的吸收层，用于乘以所生成的载流子的乘法层和插入在吸收层和乘法层之间的场控制层。此外，第一台面包括倍增层的至少一部分和场控制层的一部分形成在衬底上，包括场控制层的另一部分的第二台面和吸收层形成在第一台面上，顶表面的面积第一台面大于第二台面的底面的第一台面，并且半导体层形成在第一台面顶面的未被第二台面和第二台面的侧面覆盖的部分上。

5. 发明授权

US5177758A Semiconductor laser device with plural active layers and changing optical properties 失效
标题翻译：具有多个有源层和改变光学特性的半导体激光器件
公开(公告)号：US5177758A
公开(公告)日：1993-01-05
申请号：US803206
申请日：1991-12-06
申请人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
发明人： Akihiko Oka , Shinji Sakano , Naoki Chinone , Tsukuru Ohtoshi , Kazuhisa Uomi , Tomonobu Tsuchiya , Makoto Okai
IPC分类号： H01S5/062 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/227 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/06258 , H01S5/10 , H01S5/06213 , H01S5/06256 , H01S5/1028 , H01S5/106 , H01S5/12 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A wavelength-tunable semiconductor laser device presenting a large wavelength-tunable range or a very-high-speed modulating semiconductor laser device having a distributed feedback structure including a diffraction grating as in the case of a DBR laser or a DFB laser incorporates therein a plurality of active layers differing from one another in constituent elements or composition ratio or thickness for reducing spectral line widths, while improving single-mode spectral oscillation characteristics.
摘要翻译：具有大波长可调范围的波长可调谐半导体激光器件或具有如在DBR激光器或DFB激光器的情况下包括衍射光栅的分布式反馈结构的非常高速调制的半导体激光器件包含多个的有源层彼此不同的组成元素或组成比或厚度以减小谱线宽度，同时改善单模光谱振荡特性。

6. 发明授权

US5132981A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5132981A
公开(公告)日：1992-07-21
申请号：US529245
申请日：1990-05-25
申请人： Kazuhisa Uomi , Shinji Sasaki , Tomonobu Tsuchiya , Naoki Chinone , Tsukuru Ohtoshi
发明人： Kazuhisa Uomi , Shinji Sasaki , Tomonobu Tsuchiya , Naoki Chinone , Tsukuru Ohtoshi
IPC分类号： G02F1/017 , H01L31/0352 , H01L33/06 , H01S5/062 , H01S5/12 , H01S5/125 , H01S5/20 , H01S5/227 , H01S5/32 , H01S5/34 , H01S5/343
CPC分类号： H01S5/34 , B82Y20/00 , G02F1/017 , H01L31/035236 , H01L33/06 , H01S5/0622 , H01S5/227 , H01S5/32 , G02F1/01708 , H01S5/06213 , H01S5/12 , H01S5/125 , H01S5/2004 , H01S5/2009 , H01S5/2275 , H01S5/3211 , H01S5/3403 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A semiconductor optical device having a region in which semiconductor or carriers in the semiconductor and light are interact, for example, an active region for a semiconductor laser, an optical wave guide region of an optical modulator, etc., includes a quantum well structure having a well region and a barrier region. The semiconductor optical device is remarkably improved with the degree of design freedom as it relates to parameters such as thickness and selection of material without deteriorating the quantum effect, by introducing a super lattice super-layer structure into the barrier region of the quantum well structure or defining the strain for the well region and the barrier region.

7. 发明授权

US4563764A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4563764A
公开(公告)日：1986-01-07
申请号：US531710
申请日：1983-09-13
申请人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
发明人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index than those of the first semiconductor layer, the second and third semiconductor layers having conductivity types opposite to each other; characterized in that the relationship between a donor density (N.sub.D .times.10.sup.17 cm.sup.-3) of the n-conductivity type semiconductor layer in the second and third semiconductor layers and a proportion (.GAMMA..sub.n %) of an optical output existing in the n-conductivity type semiconductor layer relative to a total optical output of the laser is set at N.sub.D .times..GAMMA..sub.n .gtoreq.500. Noise characteristics are sharply improved.
摘要翻译：公开了一种半导体激光器件，其至少具有包含第一半导体层的光限制区域，以及将第一半导体层保持在其间并且具有比第一半导体层的更大的带隙和更低的折射率的第二和第三半导体层所述第二和第三半导体层具有彼此相反的导电类型; 其特征在于，第二和第三半导体层中的n导电型半导体层的供体密度（ND×107cm-3）与存在于n导电型半导体中的光输出的比例（GAMMA n％）之间的关系相对于激光的总光输出的层设置为NDx GAMMA n> = 500。噪声特性大幅提高。

8. 发明授权

US08390549B2 Organic luminescent display device 失效
标题翻译：有机发光显示装置
公开(公告)号：US08390549B2
公开(公告)日：2013-03-05
申请号：US12647025
申请日：2009-12-24
申请人： Shingo Ishihara , Tsukuru Ohtoshi
发明人： Shingo Ishihara , Tsukuru Ohtoshi
IPC分类号： G09G3/32
CPC分类号： H01L51/5265 , H01L27/3211 , H01L51/5096 , H01L51/5275
摘要： Organic luminescent elements forming an R sub-pixel, a G sub-pixel, and a B sub-pixel are formed of lower electrodes (3, 4, and 5), hole-transporting layers (7, 8, and 11), luminescent layers (9, 12, and 14), electron-transporting layers (10, 13, and 15), and an upper electrode (16), and each of the organic luminescent elements optimizes an optical interference condition. A dielectric alternate laminated film (17) is formed on the upper electrode (16), and forms a micro-resonator with each of the lower electrodes. The micro-resonator structure raises the directivity of a radiation pattern, and improves the light extraction efficiency of each of the organic luminescent elements. A narrow radiation pattern is alleviated by a view angle-controlling layer (19) formed on the dielectric alternate laminated film (17) so as to broaden until a perfectly diffusing surface radiation pattern. Consequently, the light extraction efficiency can be improved in an organic luminescent display device.
摘要翻译：形成R子像素，G子像素和B子像素的有机发光元件由下电极（3,4和5），空穴传输层（7,8和11）形成，发光层（9,12和14），电子传输层（10,13和15）和上电极（16），并且每个有机发光元件优化光学干涉条件。在上电极（16）上形成介质交替叠层膜（17），并且与每个下电极形成微谐振器。微谐振器结构提高了辐射图案的方向性，并且提高了每个有机发光元件的光提取效率。通过形成在电介质交替叠层膜（17）上的视角控制层（19）来减轻窄辐射图，以便扩展直到完全扩散的表面辐射图。因此，可以在有机发光显示装置中提高光提取效率。

9. 发明申请

US20100164842A1 ORGANIC LUMINESCENT DISPLAY DEVICE 失效
标题翻译：有机发光显示装置
公开(公告)号：US20100164842A1
公开(公告)日：2010-07-01
申请号：US12647025
申请日：2009-12-24
申请人： Shingo ISHIHARA , Tsukuru Ohtoshi
发明人： Shingo ISHIHARA , Tsukuru Ohtoshi
IPC分类号： G09G3/32
CPC分类号： H01L51/5265 , H01L27/3211 , H01L51/5096 , H01L51/5275
摘要： Organic luminescent elements forming an R sub-pixel, a G sub-pixel, and a B sub-pixel are formed of lower electrodes (3, 4, and 5), hole-transporting layers (7, 8, and 11), luminescent layers (9, 12, and 14), electron-transporting layers (10, 13, and 15), and an upper electrode (16), and each of the organic luminescent elements optimizes an optical interference condition. A dielectric alternate laminated film (17) is formed on the upper electrode (16), and forms a micro-resonator with each of the lower electrodes. The micro-resonator structure raises the directivity of a radiation pattern, and improves the light extraction efficiency of each of the organic luminescent elements. A narrow radiation pattern is alleviated by a view angle-controlling layer (19) formed on the dielectric alternate laminated film (17) so as to broaden until a perfectly diffusing surface radiation pattern. Consequently, the light extraction efficiency can be improved in an organic luminescent display device.
摘要翻译：形成R子像素，G子像素和B子像素的有机发光元件由下电极（3,4和5），空穴传输层（7,8和11）形成，发光层（9,12和14），电子传输层（10,13和15）和上电极（16），并且每个有机发光元件优化光学干涉条件。在上电极（16）上形成介质交替叠层膜（17），并且与每个下电极形成微谐振器。微谐振器结构提高了辐射图案的方向性，并且提高了每个有机发光元件的光提取效率。通过形成在电介质交替叠层膜（17）上的视角控制层（19）来减轻窄辐射图，以便扩展直到完全扩散的表面辐射图。因此，可以在有机发光显示装置中提高光提取效率。

10. 发明授权

US06542526B1 Optical information processor and semiconductor light emitting device suitable for the same 有权
标题翻译：光信息处理器和半导体发光器件适合相同
公开(公告)号：US06542526B1
公开(公告)日：2003-04-01
申请号：US09297147
申请日：1999-04-26
申请人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
发明人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3202 , H01S5/3407 , H01S5/343 , H01S5/34333
摘要： Provided are highly reliable information processing equipment enabling a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, which device is suitable for the information processing equipment. According to the present invention, there can be realized highly reliable optical information processing equipment enabling high recording density, which is capable of sufficiently recording or reproducing a dynamic image in or from a high-definition TV. An n-type impurity is doped in a barrier layer of a quantum-well active layer of a semiconductor light emitting device at a high density. Alternatively, the oriented plane of a quantum-well active layer of a semiconductor light emitting device is inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be reduced. The semiconductor light emitting device is represented by a gallium nitride based compound semiconductor laser device.
摘要翻译：提供了能够实现高记录密度的高度可靠的信息处理设备以及以低阈值电流密度可操作的蓝色，蓝紫色和紫色的半导体发光器件，该装置适用于信息处理设备。根据本发明，可以实现能够实现高记录密度的高度可靠的光信息处理设备，其能够在高分辨率TV中或从高清晰度电视机中充分地记录或再现动态图像。在n型杂质中掺杂n型杂质高密度的半导体发光器件的量子阱有源层的阻挡层。或者，半导体发光器件的量子阱有源层的取向平面从（0001）面倾斜，从而可以减小半导体发光器件的阈值电流值。半导体发光器件由氮化镓基化合物半导体激光器件表示。

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