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1. 发明授权

US5157679A Optoelectronic devices 失效
标题翻译：光电器件
公开(公告)号：US5157679A
公开(公告)日：1992-10-20
申请号：US642006
申请日：1991-01-16
申请人： Masahiko Kondow , Toshihiro Kawano , Shigekazu Minagawa , Shin Satoh , Kenji Uchida , Toshiaki Tanaka , Takashi Kajimura
发明人： Masahiko Kondow , Toshihiro Kawano , Shigekazu Minagawa , Shin Satoh , Kenji Uchida , Toshiaki Tanaka , Takashi Kajimura
IPC分类号： H01L33/00 , H01L33/16 , H01S5/20 , H01S5/223 , H01S5/30 , H01S5/32 , H01S5/323
CPC分类号： H01L33/16 , H01L33/0062 , H01S5/32325 , H01S5/2059 , H01S5/2231 , H01S5/305 , H01S5/3202
摘要： An optielectronic device comprising a substrate crystal whose crystal plane is a (n11) plane tilted from the (100) plane toward the [110] direction, or [110] direction where (n>1). When the substrate is applied to an AlGaInP semiconductor laser, the optical device can be cleaved into a rectangular shape, as in the case of a (100) substrate crystal, resulting in easy handling of the chips and also is effective for making the lasting wavelength shorter, lowering the threshold current density for lasing, improving the continuous lasing temperature, etc. Furthermore, semiconductor lasers of different lasing wavelengths can be prepared under good control. Furthermore, a doping efficiency having no dependence on a tilt angle can be obtained by proper selection of a dopant. For example, Si is suitable as an n-type dopant entering sites of group III atom on an (n11) A plane (n.gtoreq.2).
摘要翻译：一种光电装置，其包括晶体面，其晶面是从（100）面朝向[110]方向或（110）方向倾斜的（n11）面，其中（n> 1）。当将衬底施加到AlGaInP半导体激光器时，如在（100）衬底晶体的情况下，光学器件可以被切割成矩形形状，从而易于处理芯片，并且对于使持久波长有效更短，降低激光器的阈值电流密度，改善连续激光温度等。此外，可以在良好的控制下制备不同激光波长的半导体激光器。此外，通过适当选择掺杂剂可以获得不依赖于倾斜角的掺杂效率。例如，Si适合作为在（n11）A平面（n> = = 2）上进入III族原子的位置的n型掺杂剂。

2. 发明授权

US4811354A Semiconductor laser 失效
标题翻译：半导体激光器
公开(公告)号：US4811354A
公开(公告)日：1989-03-07
申请号：US895843
申请日：1986-08-12
申请人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
发明人： Kazuhisa Uomi , Naoki Chinone , Misuzu Yoshizawa , Shin'ichi Nakatsuka , Takashi Kajimura , Yuichi Ono
IPC分类号： H01S5/10 , H01S5/343 , H01S5/40 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/4031 , H01S5/10 , H01S5/1032 , H01S5/3432
摘要： A phased array semiconductor laser has two or more luminous stripes. The number, width or center to center spacing of stripes is made different between the center region and neighborhood of facets of the laser so that the laser may oscillate stably in the fundamental supermode with an optical output of 100 mW or more.
摘要翻译：相控阵半导体激光器具有两个或更多个发光条纹。条纹的数量，宽度或中心到中心的间隔在激光器的小面的中心区域和邻近区域之间是不同的，使得激光器可以以100mW或更大的光学输出在基本超声波中稳定地振荡。

3. 发明授权

US4800565A Semiconductor laser device having high optical intensity and reliability 失效
标题翻译：具有高光强度和可靠性的半导体激光器件
公开(公告)号：US4800565A
公开(公告)日：1989-01-24
申请号：US94602
申请日：1987-09-09
申请人： Misuzu Yoshizawa , Kazuhisa Uomi , Toshihiro Kawano , Yuichi Ono , Takashi Kajimura
发明人： Misuzu Yoshizawa , Kazuhisa Uomi , Toshihiro Kawano , Yuichi Ono , Takashi Kajimura
IPC分类号： H01S5/00 , H01S5/042 , H01S5/20 , H01S5/223 , H01S5/32 , H01S5/323 , H01S3/19
CPC分类号： H01S5/32 , H01S5/2231 , H01S5/32308 , H01S5/2004 , H01S5/3211
摘要： Disclosed is a semiconductor laser wherein an interface layer is provided on an upper cladding layer formed on an active layer, the interface layer having a smaller Al mole ratio than that of the upper cladding layer, thereby preventing oxidation of the semiconductor surface which is exposed to the atmosphere, and thus improving the crystallizability of a semiconductor layer which is to be formed subsequently. By setting the refractive index of this semiconductor layer so as to be smaller than that of the upper cladding layer, light can be confined in the active layer at increased efficiency.
摘要翻译：公开了一种半导体激光器，其中界面层设置在形成于有源层上的上包层上，该界面层具有比上包层更低的Al摩尔比，从而防止暴露于气氛，从而提高将要形成的半导体层的结晶性。通过将该半导体层的折射率设定为小于上包层的折射率，可以以更高的效率将光限制在有源层中。

4. 发明授权

US4740976A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4740976A
公开(公告)日：1988-04-26
申请号：US592956
申请日：1984-03-23
申请人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
发明人： Takashi Kajimura , Shinichi Nakatuka , Naoki Chinone , Michiharu Nakamura , Yuichi Ono
IPC分类号： H01S5/223 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/34313 , H01S5/3432
摘要： A semiconductor laser device comprises a semiconductor layer stack consisting of a first clad layer, an active layer, and a second clad layer which are successively stacked on a semiconductor substrate, and a light absorbing layer and a current blocking layer which are stacked on the second clad layer; the semiconductor assembly including a stripe shaped groove which extends from the surface of the semiconductor layer stack to the surface or interior of the second cladding layer, and another semiconductor layer having a forbidden band width greater than the active layer and the same conductivity type as the second clad layer which is embedded into the groove by chemical vapor deposition method.
摘要翻译：半导体激光器件包括由半导体衬底上依次层叠的第一覆盖层，有源层和第二覆盖层构成的半导体层堆叠，以及层叠在第二覆盖层上的光吸收层和电流阻挡层包层所述半导体组件包括从所述半导体层堆叠的表面延伸到所述第二包层的表面或内部的条形槽，以及具有比所述有源层大的禁带宽度和与所述有源层相同的导电类型的另一半导体层通过化学气相沉积法嵌入凹槽中的第二覆层。

5. 发明授权

US4563764A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4563764A
公开(公告)日：1986-01-07
申请号：US531710
申请日：1983-09-13
申请人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
发明人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index than those of the first semiconductor layer, the second and third semiconductor layers having conductivity types opposite to each other; characterized in that the relationship between a donor density (N.sub.D .times.10.sup.17 cm.sup.-3) of the n-conductivity type semiconductor layer in the second and third semiconductor layers and a proportion (.GAMMA..sub.n %) of an optical output existing in the n-conductivity type semiconductor layer relative to a total optical output of the laser is set at N.sub.D .times..GAMMA..sub.n .gtoreq.500. Noise characteristics are sharply improved.
摘要翻译：公开了一种半导体激光器件，其至少具有包含第一半导体层的光限制区域，以及将第一半导体层保持在其间并且具有比第一半导体层的更大的带隙和更低的折射率的第二和第三半导体层所述第二和第三半导体层具有彼此相反的导电类型; 其特征在于，第二和第三半导体层中的n导电型半导体层的供体密度（ND×107cm-3）与存在于n导电型半导体中的光输出的比例（GAMMA n％）之间的关系相对于激光的总光输出的层设置为NDx GAMMA n> = 500。噪声特性大幅提高。

6. 发明授权

US4503540A Phase-locked semiconductor laser device 失效
标题翻译：锁相半导体激光器件
公开(公告)号：US4503540A
公开(公告)日：1985-03-05
申请号：US368150
申请日：1982-04-14
申请人： Hisao Nakashima , Jun-ichi Umeda , Takao Kuroda , Takashi Kajimura , Hiroshi Matsuda
发明人： Hisao Nakashima , Jun-ichi Umeda , Takao Kuroda , Takashi Kajimura , Hiroshi Matsuda
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2203 , H01S5/4043 , H01S5/0424 , H01S5/2275
摘要： A phase-locked semiconductor laser device comprising a laminated structure in which a plurality of first semiconductor layers having the substantially same composition are stacked in a manner to be sandwiched between second semiconductor layers having a band gap wider, and a refractive index lower, than those of said first semiconductor layers; a third semiconductor layer which is disposed in contact with at least one of side faces of said laminated structure parallel to a traveling direction of a laser beam, which is not narrower in the band gap and not higher in the refractive index than said first semiconductor layers and which does not have the same conductivity type as, at least, that of said first semiconductor layers; means to inject current into an interface between said first semiconductor layers and said third semiconductor layer disposed on the side face of said laminated structure; and means to act as an optical resonator for the laser beam.
摘要翻译：一种锁相半导体激光器件，包括层叠结构，其中具有基本上相同组成的多个第一半导体层以夹在带隙较宽的第二半导体层和折射率较低的第二半导体层之间的方式堆叠的所述第一半导体层; 第三半导体层，其与所述层叠结构的至少一个侧面平行设置成与激光束的行进方向平行，所述激光束的带隙不窄，折射率不高于所述第一半导体层并且其不具有至少与所述第一半导体层的导电类型相同的导电类型; 用于将电流注入到所述第一半导体层和设置在所述层叠结构的侧面上的所述第三半导体层之间的界面中的装置; 以及用作激光束的光学谐振器的装置。

7. 发明授权

US4841531A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4841531A
公开(公告)日：1989-06-20
申请号：US155058
申请日：1988-02-11
申请人： Masahiko Kondow , Shin Satoh , Shigekazu Minagawa , Akio Ohishi , Takashi Kajimura
发明人： Masahiko Kondow , Shin Satoh , Shigekazu Minagawa , Akio Ohishi , Takashi Kajimura
IPC分类号： H01L21/205 , H01S5/00 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/343 , H01S5/342 , H01S5/3425 , H01S5/3434
摘要： A semiconductor laser having a double hetero structure comprises a cladding layer of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.0.5, 0.5.ltoreq.x+y.ltoreq.1) and an active layer of a strained-layer-superlattice of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) system, thus enabling the lasing of wavelength ranges from infra-red to green.
摘要翻译：具有双异质结构的半导体激光器包括In1-x-yGaxAlyP1-zAsz（0≤x≤1,0≤y≤1,0≤z≤0.5）的包层，0.5≤x+ y <1），并且In1-x-yGaxAlyP1-zAsz（0≤x≤1,0

8. 发明授权

US4780879A Semiconductor laser device having little astigmatism 失效
标题翻译：具有很少散光的半导体激光器件
公开(公告)号：US4780879A
公开(公告)日：1988-10-25
申请号：US16410
申请日：1987-02-19
申请人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
发明人： Naoki Chinone , Shigeo Yamashita , Shin'ichi Nakatsuka , Akemi Yamanaka , Yuichi Ono , Toshihiro Kawano , Kazuhisa Uomi , Takashi Kajimura , Toshiaki Tanaka , Kunio Aiki
IPC分类号： H01S5/00 , H01S3/00 , H01S5/026 , H01S5/10 , H01S3/19
CPC分类号： H01S5/1082 , H01S5/0267 , H01S5/1064
摘要： A semiconductor laser device having a stripe-shaped active region defined between a pair of end surfaces, at least one of the end surfaces having a curved cross-section in a plane parallel to the active region with a radius of curvature from 10 to 300 .mu.m, the stripe of the active region having such a width that a single transverse mode and a multi-longitudinal mode are allowed. The laser beam emitted from this laser can have little astigmatism and small spot size.
摘要翻译：一种半导体激光器件，其具有限定在一对端面之间的条状有源区域，所述端面中的至少一个在平行于有源区域的平面中具有弯曲的横截面，其曲率半径为10至300μm m，有源区域的条纹具有允许单横模和多纵模的宽度。从该激光器发射的激光束可以具有很少的散光和小的斑点尺寸。

9. 发明授权

US4369513A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4369513A
公开(公告)日：1983-01-18
申请号：US204012
申请日：1980-10-31
申请人： Jun-ichi Umeda , Takashi Kajimura
发明人： Jun-ichi Umeda , Takashi Kajimura
IPC分类号： H01S5/042 , H01S5/10 , H01S5/40 , H01S3/19
CPC分类号： H01S5/10 , H01S5/4031 , H01S5/0425
摘要： Disclosed is a semiconductor laser element having on a predetermined semiconductor substrate a stacked region for optical confinement including an active layer and clad layers, a first electrode disposed on the semiconductor substrate side and a second electrode disposed over the stacked region, and means for constructing an optical resonator, the semiconductor laser element comprising the fact that the means to inject current into the active layer is formed of a plurality of stripe conductive regions which are juxtaposed in traveling direction of a laser beam, and that laser radiations emitted in correspondence with the respective stripe conductive regions form a simply connected net and give rise to nonlinear interactions among them. As a typical example of the current injection means, the conductive regions have a strip-shaped pattern which includes a broader portion and a narrower portion. A coupled-multiple-stripe laser element in which the phases and wavelengths of the laser radiations of the respective strips are uniform is realized.
摘要翻译：公开了一种半导体激光元件，其特征在于，在规定的半导体基板上具有包括有源层和包层的光限制用的堆叠区域，配置在半导体基板侧的第一电极和配置在堆叠区域上的第二电极，光学谐振器，该半导体激光元件包括以下事实：注入有源层的电流的装置由在激光束的行进方向上并列的多个条状导电区域形成，并且与相应的激光辐射相对应地发射的激光辐射条纹导电区域形成简单连接的网络，并引起它们之间的非线性相互作用。作为电流注入装置的典型实例，导电区域具有包括较宽部分和较窄部分的条状图案。实现了各条带的激光辐射的相位和波长均匀的耦合多条激光元件。

10. 发明授权

US4881235A Semiconductor laser having a multiple quantum well structure doped with impurities 失效
标题翻译：具有掺杂有杂质的多量子阱结构的半导体激光器
公开(公告)号：US4881235A
公开(公告)日：1989-11-14
申请号：US41410
申请日：1987-04-23
申请人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
发明人： Naoki Chinone , Kazuhisa Uomi , Tadashi Fukuzawa , Hideaki Matsueda , Takashi Kajimura , Tsukuru Ohtoshi
IPC分类号： H01S5/227 , H01S5/34
CPC分类号： B82Y20/00 , H01S5/227 , H01S5/34 , H01S5/2275 , H01S5/309 , H01S5/3407 , Y10S372/704
摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the n-conductivity type. Desirably, the impurity density should range from about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.- 3.
摘要翻译：在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长，在阻挡层中的密度比井层中的密度高。此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面靠近p型包层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的势垒层的部分被放入n导电型。理想地，杂质密度应在约1×1018至约1×1019cm-3的范围内。

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