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1. 发明授权

US4563764A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4563764A
公开(公告)日：1986-01-07
申请号：US531710
申请日：1983-09-13
申请人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
发明人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Hirobumi Ouchi , Tsukuru Ohtoshi
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： Disclosed is a semiconductor laser device having at least an optical confinement region which includes a first semiconductor layer, and second and third semiconductor layers holding the first semiconductor layer therebetween and having a greater band gap and a lower refractive index than those of the first semiconductor layer, the second and third semiconductor layers having conductivity types opposite to each other; characterized in that the relationship between a donor density (N.sub.D .times.10.sup.17 cm.sup.-3) of the n-conductivity type semiconductor layer in the second and third semiconductor layers and a proportion (.GAMMA..sub.n %) of an optical output existing in the n-conductivity type semiconductor layer relative to a total optical output of the laser is set at N.sub.D .times..GAMMA..sub.n .gtoreq.500. Noise characteristics are sharply improved.
摘要翻译：公开了一种半导体激光器件，其至少具有包含第一半导体层的光限制区域，以及将第一半导体层保持在其间并且具有比第一半导体层的更大的带隙和更低的折射率的第二和第三半导体层所述第二和第三半导体层具有彼此相反的导电类型; 其特征在于，第二和第三半导体层中的n导电型半导体层的供体密度（ND×107cm-3）与存在于n导电型半导体中的光输出的比例（GAMMA n％）之间的关系相对于激光的总光输出的层设置为NDx GAMMA n> = 500。噪声特性大幅提高。

2. 发明授权

US4630279A Buried heterojunction laser 失效
标题翻译：埋入异质结激光
公开(公告)号：US4630279A
公开(公告)日：1986-12-16
申请号：US462908
申请日：1983-02-01
申请人： Takashi Kajimura , Takao Kuroda , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki
发明人： Takashi Kajimura , Takao Kuroda , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki
IPC分类号： H01S5/00 , H01S5/042 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： Disclosed herein is a semiconductor laser device including at least an optical confinement region having at least first, second and third semiconductor layers disposed on a semiconductor substrate, wherein the first and third semiconductor layers have refractive indices greater than the refractive index of the second semiconductor layer but have forebidden band gap smaller than that of the second semiconductor layer and the conductivity types of the first and third semiconductor layers are opposite to each other; the second semiconductor layer has a smooth change of its thickness in two directions parallel to a junction surface of the optical confinement region; and a difference exists in the refractive indices of the first and third semiconductor layers.
摘要翻译：本文公开了一种半导体激光器件，其至少包括具有至少设置在半导体衬底上的第一，第二和第三半导体层的光限制区域，其中第一和第三半导体层的折射率大于第二半导体层的折射率但是具有比第二半导体层小的带隙，并且第一和第三半导体层的导电类型彼此相反; 所述第二半导体层在与所述光限制区域的接合面平行的两个方向上具有平滑的厚度变化; 并且第一和第三半导体层的折射率存在差异。

3. 发明授权

US4432091A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4432091A
公开(公告)日：1984-02-14
申请号：US342357
申请日：1982-01-25
申请人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki , Jun-ichi Umeda
发明人： Takao Kuroda , Takashi Kajimura , Yasutoshi Kashiwada , Naoki Chinone , Kunio Aiki , Jun-ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/10 , H01S3/19
CPC分类号： H01S5/10
摘要： In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination (.theta.) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle .theta. (rad) should most preferably lie in a range of: ##EQU1## where .theta..sub.z denotes a reflection angle, .theta..sub.c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.
摘要翻译：在具有至少第一半导体层的半导体激光器件中，以夹着第一半导体层的方式形成并且具有比第一半导体层的折射率更宽的带隙和更低折射率的第二和第三半导体层，光学谐振器和载体注入装置; 一种半导体激光器件，其特征在于，至少所述第一半导体层相对于垂直于构成所述光谐振器的光学平面的轴线具有倾斜角（θ）。倾斜角度θ（rad）应最优选在以下范围内：θz表示反射角，θc临界角，波导厚度的W 1/2，以及l腔长度。激光装置有效防止激光刻面破碎，并能产生高功率。

4. 发明授权

US06542526B1 Optical information processor and semiconductor light emitting device suitable for the same 有权
标题翻译：光信息处理器和半导体发光器件适合相同
公开(公告)号：US06542526B1
公开(公告)日：2003-04-01
申请号：US09297147
申请日：1999-04-26
申请人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
发明人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3202 , H01S5/3407 , H01S5/343 , H01S5/34333
摘要： Provided are highly reliable information processing equipment enabling a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, which device is suitable for the information processing equipment. According to the present invention, there can be realized highly reliable optical information processing equipment enabling high recording density, which is capable of sufficiently recording or reproducing a dynamic image in or from a high-definition TV. An n-type impurity is doped in a barrier layer of a quantum-well active layer of a semiconductor light emitting device at a high density. Alternatively, the oriented plane of a quantum-well active layer of a semiconductor light emitting device is inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be reduced. The semiconductor light emitting device is represented by a gallium nitride based compound semiconductor laser device.
摘要翻译：提供了能够实现高记录密度的高度可靠的信息处理设备以及以低阈值电流密度可操作的蓝色，蓝紫色和紫色的半导体发光器件，该装置适用于信息处理设备。根据本发明，可以实现能够实现高记录密度的高度可靠的光信息处理设备，其能够在高分辨率TV中或从高清晰度电视机中充分地记录或再现动态图像。在n型杂质中掺杂n型杂质高密度的半导体发光器件的量子阱有源层的阻挡层。或者，半导体发光器件的量子阱有源层的取向平面从（0001）面倾斜，从而可以减小半导体发光器件的阈值电流值。半导体发光器件由氮化镓基化合物半导体激光器件表示。

5. 发明授权

US06639925B2 Optical information processing equipment and semiconductor light emitting device suitable therefor 有权
公开(公告)号：US06639925B2
公开(公告)日：2003-10-28
申请号：US09964519
申请日：2001-09-28
申请人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
发明人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3202 , H01S5/3407 , H01S5/343 , H01S5/34333
摘要： An information processor of a high reliability and a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, used for the same, are provided. An optical information processor of a high reliability and a high recording density enables a moving picture, such as a high-definition television picture, to be recorded and reproduced satisfactorily. A barrier layer in a quantum-well active layer of a semiconductor light emitting device is doped with n-type impurities at a high density. Alternatively, the face orientation of a quantum-well active layer of a semiconductor light emitting device is a plane inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be decreased. The semiconductor light emitting device is typified by a gallium nitride based compound semiconductor laser device.

6. 发明授权

US4503540A Phase-locked semiconductor laser device 失效
标题翻译：锁相半导体激光器件
公开(公告)号：US4503540A
公开(公告)日：1985-03-05
申请号：US368150
申请日：1982-04-14
申请人： Hisao Nakashima , Jun-ichi Umeda , Takao Kuroda , Takashi Kajimura , Hiroshi Matsuda
发明人： Hisao Nakashima , Jun-ichi Umeda , Takao Kuroda , Takashi Kajimura , Hiroshi Matsuda
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/227 , H01S5/40 , H01S3/19
CPC分类号： H01S5/2203 , H01S5/4043 , H01S5/0424 , H01S5/2275
摘要： A phase-locked semiconductor laser device comprising a laminated structure in which a plurality of first semiconductor layers having the substantially same composition are stacked in a manner to be sandwiched between second semiconductor layers having a band gap wider, and a refractive index lower, than those of said first semiconductor layers; a third semiconductor layer which is disposed in contact with at least one of side faces of said laminated structure parallel to a traveling direction of a laser beam, which is not narrower in the band gap and not higher in the refractive index than said first semiconductor layers and which does not have the same conductivity type as, at least, that of said first semiconductor layers; means to inject current into an interface between said first semiconductor layers and said third semiconductor layer disposed on the side face of said laminated structure; and means to act as an optical resonator for the laser beam.
摘要翻译：一种锁相半导体激光器件，包括层叠结构，其中具有基本上相同组成的多个第一半导体层以夹在带隙较宽的第二半导体层和折射率较低的第二半导体层之间的方式堆叠的所述第一半导体层; 第三半导体层，其与所述层叠结构的至少一个侧面平行设置成与激光束的行进方向平行，所述激光束的带隙不窄，折射率不高于所述第一半导体层并且其不具有至少与所述第一半导体层的导电类型相同的导电类型; 用于将电流注入到所述第一半导体层和设置在所述层叠结构的侧面上的所述第三半导体层之间的界面中的装置; 以及用作激光束的光学谐振器的装置。

7. 发明授权

US4426703A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4426703A
公开(公告)日：1984-01-17
申请号：US272039
申请日：1981-06-09
申请人： Takao Kuroda , Takashi Kajimura , Jun-ichi Umeda , Katsutoshi Saito
发明人： Takao Kuroda , Takashi Kajimura , Jun-ichi Umeda , Katsutoshi Saito
IPC分类号： H01S5/00 , H01S5/20 , H01S5/223 , H01S3/19
CPC分类号： H01S5/20 , H01S5/2231 , H01S5/2059
摘要： In a semiconductor laser device wherein a stripe-shaped impurity-diffused region is disposed in at least parts of semiconductor layers of from a surface semiconductor layer of a semiconductor layer assembly constituting the semiconductor laser device to a second semiconductor layer lying in contact with a first semiconductor layer having an active region, the impurity-diffused region having the same conductivity type as that of the second semiconductor layer and extending at least from the surface semiconductor layer to a depth vicinal to the first semiconductor layer, the impurity region serving as a current path; a semiconductor laser device characterized in that a third semiconductor layer in which the diffusion rate of an impurity for use in the formation of the impurity-diffused region is lower than in the second semiconductor layer is disposed between the surface semiconductor layer and the second semiconductor layer.
摘要翻译：在半导体激光器件中，其中条形杂质扩散区域设置在从构成半导体激光器件的半导体层组件的表面半导体层的半导体层的至少部分到与第一具有有源区的半导体层，杂质扩散区具有与第二半导体层相同的导电类型并且至少从表面半导体层延伸到与第一半导体层相邻的深度，杂质区用作电流路径; 一种半导体激光器件，其特征在于，在所述表面半导体层和所述第二半导体层之间设置有其中用于形成所述杂质扩散区域的杂质的扩散速率低于所述第二半导体层的第三半导体层。

8. 发明授权

US4509173A Phase-locked semiconductor laser device 失效
标题翻译：锁相半导体激光器件
公开(公告)号：US4509173A
公开(公告)日：1985-04-02
申请号：US366324
申请日：1982-04-07
申请人： Jun-ichi Umeda , Hisao Nakashima , Takashi Kajimura , Takao Kuroda
发明人： Jun-ichi Umeda , Hisao Nakashima , Takashi Kajimura , Takao Kuroda
IPC分类号： H01S5/00 , H01S5/40 , H01S3/19
CPC分类号： H01S5/4068
摘要： A semiconductor laser device is provided with a semiconductor substrate and at least a semiconductor assembly for optical confinement formed on the substrate which includes an active layer and cladding layers. A first electrode is disposed on the semiconductor assembly and a second electrode is disposed on the semiconductor substrate. To provide a phase-locked semiconductor laser device of high quality, a plurality of regions are provided in the semiconductor assembly which, in effect, cause a variation of a complex refractive index for a laser beam in a direction intersecting with a traveling direction of the laser beam. These regions can be discretely disposed over or under the active layer and give rise to a nonlinear interaction between adjacent laser emission regions formed by the plurality of regions.
摘要翻译：半导体激光装置设置有半导体基板和至少一个形成在基板上的用于光学限制的半导体组件，该半导体组件包括有源层和包层。第一电极设置在半导体组件上，第二电极设置在半导体衬底上。为了提供高质量的锁相半导体激光器件，在半导体组件中设置多个区域，其实际上导致激光束在与行进方向相交的方向上的复合折射率的变化激光束。这些区域可以离散地设置在有源层上或下方，并产生由多个区域形成的相邻激光发射区域之间的非线性相互作用。

9. 发明授权

US4288757A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US4288757A
公开(公告)日：1981-09-08
申请号：US56360
申请日：1979-07-10
申请人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
发明人： Takashi Kajimura , Motohisa Hirao , Michiharu Nakamura , Takao Kuroda , Shigeo Yamashita , Jun-Ichi Umeda
IPC分类号： H01L21/208 , H01S5/00 , H01S5/22 , H01S5/323 , H01S3/19
CPC分类号： H01L33/0025 , H01S5/22 , H01S5/32308 , H01S5/32325
摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.
摘要翻译：在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

10. 发明申请

US20080012048A1 Semiconductor Device And Method For Manufacturing Same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20080012048A1
公开(公告)日：2008-01-17
申请号：US11570658
申请日：2005-12-14
申请人： Takao Kuroda
发明人： Takao Kuroda
IPC分类号： H01L27/148 , H01L21/339 , H01L29/76
CPC分类号： H01L27/14689 , H01L27/14806 , H01L29/76833
摘要： In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.
摘要翻译：在包括通过绝缘层3设置在半导体衬底1上的转移电极2a至2c的结构的半导体器件10中，具有第一导电类型的第一半导体区域4，导电类型的第二半导体区域5 第一导电类型的第三半导体区域6以及直接位于转移电极2a至2c下方的与半导体衬底1的区域重叠的位置。第二半导体区域5形成在第一半导体区域4上。第三半导体区域6形成在第二半导体区域5上，使得当第三半导体区域6被耗尽时第二半导体区域5的电位的最大点8的位置比第三半导体区域5的第三半导体区域5的最大点8的位置更深半导体区域6不存在。

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