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1. 发明授权

US06635908B2 Burying type avalanche photodiode and fabrication method thereof 有权
标题翻译：埋地型雪崩光电二极管及其制造方法
公开(公告)号：US06635908B2
公开(公告)日：2003-10-21
申请号：US09942737
申请日：2001-08-31
申请人： Shigehisa Tanaka , Yasunobu Matsuoka , Kazuhiro Ito , Tomohiro Ohno , Sumiko Fujisaki , Akira Taike , Tsukuru Ohtoshi , Shinji Tsuji
发明人： Shigehisa Tanaka , Yasunobu Matsuoka , Kazuhiro Ito , Tomohiro Ohno , Sumiko Fujisaki , Akira Taike , Tsukuru Ohtoshi , Shinji Tsuji
IPC分类号： H01L310328
CPC分类号： H01L31/1075 , H01L31/02161 , H01L31/035281 , Y02E10/50
摘要： The object of disclosing the novel art consists in providing a highly reliable mesa-structured avalanche photo-diode using a novel structure capable of keeping the dark current low, and a fabrication method thereof. The avalanche photo-diode for achieving the object has an absorption layer for absorbing light to generate a carrier, a multiplication layer for multiplying the generated carrier, and a field control layer inserted between the absorption layer and the multiplication layer. Moreover, a first mesa including at least part of the multiplication layer and part of the field control layer is formed over a substrate, a second mesa including another part of the field control layer and the absorption layer is formed over the first mesa, the area of the top surface of the first mesa is greater than that of the bottom surface of the second mesa, and a semiconductor layer is formed over the part of the first mesa top surface not covered by the second mesa and the side surface of the second mesa.
摘要翻译：公开新技术的目的在于提供一种使用能够保持暗电流低的新型结构的高度可靠的台面结构的雪崩光电二极管及其制造方法。用于实现物体的雪崩光电二极管具有用于吸收光以产生载流子的吸收层，用于乘以所生成的载流子的乘法层和插入在吸收层和乘法层之间的场控制层。此外，第一台面包括倍增层的至少一部分和场控制层的一部分形成在衬底上，包括场控制层的另一部分的第二台面和吸收层形成在第一台面上，顶表面的面积第一台面大于第二台面的底面的第一台面，并且半导体层形成在第一台面顶面的未被第二台面和第二台面的侧面覆盖的部分上。

2. 发明申请

US20050078904A1 OPTOELECTRONIC WAVEGUIDING DEVICE AND OPTICAL MODULES 有权
标题翻译：光电波导装置和光模块
公开(公告)号：US20050078904A1
公开(公告)日：2005-04-14
申请号：US10614779
申请日：2003-07-09
申请人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
发明人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
IPC分类号： G02F1/017 , G02B6/12 , G02B6/122 , G02B6/34 , G02B6/42 , H01S5/022 , H01S5/026 , H01S5/12
CPC分类号： G02B6/12007 , G02B6/1228 , G02B6/4215 , G02B6/4265 , G02B6/4274 , G02B2006/12078 , H01S5/0265 , H01S5/12
摘要： An optical transmission device suitable for a high-speed and large-capacity optical transmission system. An optoelectronic waveguiding device including an optical waveguide layer and cladding layers each having a larger band gap than that of the optical waveguide are deposited above and beneath the optical waveguide layer formed on a semiconductor substrate. The waveguide and cladding layers comprise optical waveguides each having a MQW structure in a direction of a light propagation axis of the optical waveguide layer. Among these optical waveguides, there exists first and second optical waveguides, whose layer structures may be mutually different. The optoelectronic waveguiding device maybe characterized in that an optical waveguide made of a bulk crystal exists in a connection part between the MQW structure waveguides each having a different layer structure. The specific connected optoelectronic waveguiding device elements may include semiconductor lasers, modulators and/or amplifiers.
摘要翻译：适用于高速大容量光传输系统的光传输装置。在半导体衬底上形成的光波导层的上方和下方淀积包括光波导层和各自具有比光波导的带隙大的覆层的光电波导装置。波导和包层包括光波导，每个光波导在光波导层的光传播轴的方向上具有MQW结构。在这些光波导中，存在第一和第二光波导，其层结构可以相互不同。光电波导装置的特征在于，由块状晶体制成的光波导存在于具有不同层结构的MQW结构波导之间的连接部分中。特定连接的光电波导器件元件可以包括半导体激光器，调制器和/或放大器。

3. 发明授权

US06973226B2 Optoelectronic waveguiding device and optical modules 有权
标题翻译：光电波导装置和光模块
公开(公告)号：US06973226B2
公开(公告)日：2005-12-06
申请号：US10614779
申请日：2003-07-09
申请人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
发明人： Hiroshi Sato , Akira Taike , Kazunori Shinoda , Shinji Tsuji
IPC分类号： G02F1/017 , G02B6/12 , G02B6/122 , G02B6/34 , G02B6/42 , H01S5/022 , H01S5/026 , H01S5/12
CPC分类号： G02B6/12007 , G02B6/1228 , G02B6/4215 , G02B6/4265 , G02B6/4274 , G02B2006/12078 , H01S5/0265 , H01S5/12
摘要： An optical transmission device suitable for a high-speed and large-capacity optical transmission system. An optoelectronic waveguiding device including an optical waveguide layer and cladding layers each having a larger band gap than that of the optical waveguide are deposited above and beneath the optical waveguide layer formed on a semiconductor substrate. The waveguide and cladding layers comprise optical waveguides each having a MQW structure in a direction of a light propagation axis of the optical waveguide layer. Among these optical waveguides, there exists first and second optical waveguides, whose layer structures may be mutually different. The optoelectronic waveguiding device maybe characterized in that an optical waveguide made of a bulk crystal exists in a connection part between the MQW structure waveguides each having a different layer structure. The specific connected optoelectronic waveguiding device elements may include semiconductor lasers, modulators and/or amplifiers.
摘要翻译：适用于高速大容量光传输系统的光传输装置。在半导体衬底上形成的光波导层的上方和下方淀积包括光波导层和各自具有比光波导的带隙大的覆层的光电波导装置。波导和包层包括光波导，每个光波导在光波导层的光传播轴的方向上具有MQW结构。在这些光波导中，存在第一和第二光波导，其层结构可以相互不同。光电波导装置的特征在于，由块状晶体制成的光波导存在于具有不同层结构的MQW结构波导之间的连接部分中。特定连接的光电波导器件元件可以包括半导体激光器，调制器和/或放大器。

4. 发明申请

US20120230361A1 SURFACE EMISSION LASER 有权
标题翻译：表面发射激光
公开(公告)号：US20120230361A1
公开(公告)日：2012-09-13
申请号：US13512595
申请日：2010-11-29
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
IPC分类号： H01S5/18
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译：具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1）设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2）位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。

5. 发明授权

US08855160B2 Horizontal-cavity surface-emitting laser 有权
标题翻译：水平腔表面发射激光器
公开(公告)号：US08855160B2
公开(公告)日：2014-10-07
申请号：US13512595
申请日：2010-11-29
申请人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
发明人： Koichiro Adachi , Yasunobu Matsuoka , Toshiki Sugawara , Kazunori Shinoda , Shinji Tsuji
IPC分类号： H01S5/18 , H01S5/40 , H01S5/022 , H01S5/22 , H01S5/042 , H01S5/12 , H01S5/026
CPC分类号： H01S5/18 , H01L2224/73265 , H01L2924/10155 , H01S5/02212 , H01S5/0224 , H01S5/02268 , H01S5/02284 , H01S5/0267 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/4025 , H01S5/4031
摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.
摘要翻译：具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1）设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2）位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。

6. 发明申请

US20120327965A1 SEMICONDUCTOR LASER ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LASER ELEMENT, AND OPTICAL MODULE 审中-公开
标题翻译：半导体激光元件，制造半导体激光元件的方法和光学模块
公开(公告)号：US20120327965A1
公开(公告)日：2012-12-27
申请号：US13521555
申请日：2010-02-02
申请人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
发明人： Kazunori Shinoda , Koichiro Adachi , Shinji Tsuji , Masahiro Aoki
IPC分类号： H01S5/028 , H01S5/024 , H01L21/02
CPC分类号： H01S5/125 , H01S5/0265 , H01S5/0267 , H01S5/187 , H01S5/2081
摘要： In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.
摘要翻译：为了提供具有高可靠性的半导体激光元件或集成光学器件，水平腔半导体激光器或光学模块包括用作腔镜的深钻DBR镜，深冲DBR镜由以下材料组成的材料组成：与衬底晶格匹配，并且具有不吸收从有源层发射的光的带隙能量。

7. 发明授权

US06822271B2 Semiconductor photodetector and optical transmitting device 失效
标题翻译：半导体光电检测器和光发射装置
公开(公告)号：US06822271B2
公开(公告)日：2004-11-23
申请号：US09485852
申请日：2000-02-17
申请人： Toshiyuki Mogi , Kazumi Kawamoto , Shinji Tsuji , Hitoshi Nakamura , Masato Shishikura , Satoru Kikuchi
发明人： Toshiyuki Mogi , Kazumi Kawamoto , Shinji Tsuji , Hitoshi Nakamura , Masato Shishikura , Satoru Kikuchi
IPC分类号： H01L2980
CPC分类号： G02B6/4224
摘要： In aiming at cost lowering of an optical module and an optical transmission apparatus and with the objective of providing a semiconductor light receiving element that has a good coherence with the other edge emitting/incidence type optical devices and is capable of performing the positioning easily and with a high accuracy, in the edge emitting/incidence type light receiving element in which the light absorbing layer 19 has been formed, the space region is formed so as to provide at least 100 &mgr;m2 of the marker detecting region 24, thereby facilitating detection of marker 23 on the optical device 26 and executing the positioning of the light receiving element with a high accuracy, the space region resulting from eliminating a part of the light absorbing layer 19 that absorbs the detection light of the light receiving element, the transmission amount of the detection light toward the marker detecting region that is parallel to a primary plane being equal to 30% or higher, the detection light having penetrated and transmitted the primary plane of the light receiving element.
摘要翻译：为了降低光学模块和光学传输装置的成本，并且为了提供与其它边缘发射/入射型光学装置具有良好相干性的半导体光接收元件，并且能够容易地执行定位在其中形成有光吸收层19的边缘发射/入射型光接收元件中形成高精度，形成空间区域，以便提供标记检测区域24的至少100微米2，从而便于检测光学装置26上的标记23，并且以高精度执行光接收元件的定位，由消除吸收光接收元件的检测光的光吸收层19的一部分而产生的空间区域，透射检测光朝着与主平面平行的标记检测区域的检测光量等于30％以上 n光穿过并透射光接收元件的主平面。

8. 发明授权

US06684627B2 Method of purifying exhaust gas from internal combustion engine 有权
标题翻译：净化内燃机废气的方法
公开(公告)号：US06684627B2
公开(公告)日：2004-02-03
申请号：US09860481
申请日：2001-05-21
申请人： Tatsuji Mizuno , Shinji Tsuji , Masahiko Takeuchi , Kenji Kato , Takaaki Ito , Yoshitsugu Ogura , Tetsuo Kawamura , Mareo Kimura
发明人： Tatsuji Mizuno , Shinji Tsuji , Masahiko Takeuchi , Kenji Kato , Takaaki Ito , Yoshitsugu Ogura , Tetsuo Kawamura , Mareo Kimura
IPC分类号： F01N300
CPC分类号： B01D53/9454 , B01D53/9495 , F01N3/0842 , F01N3/206 , F01N13/009 , F01N13/011 , F01N2570/04 , F01N2610/01 , F02B2075/125 , F02M26/36 , F02M26/53 , Y02T10/22
摘要： The present invention is a method of solidifying sulfur component being the cause of “SOx poisoning” by use of a sulfur solidifier. The solidifier includes a metal element having a function of oxidizing the sulfur component and a basic metal element. And the solidifier solidifies sulfur component before exhaust gas flows into an NOx-occluding reduction-type exhaust purifying catalyst located on an exhaust path. Since the foregoing sulfur solidifier includes the above metal element and the basic metal element, it can effectively solidify the sulfur component which are the cause of the SOx poisoning, and ensure improvement in purification performance.
摘要翻译：本发明是通过使用硫磺固化剂固化成为“SOx中毒”的原因的硫成分的方法。固化剂包括具有氧化硫成分和碱性金属元素的功能的金属元素。并且在废气流入位于排气路径上的NOx吸留还原型排气净化催化剂中之前，固化器固化硫成分。由于上述硫磺固化剂含有上述金属元素和碱性金属元素，所以能够有效地固化作为SOx中毒的原因的硫成分，能够确保净化性能的提高。

9. 发明授权

US06440378B1 Catalyst for purifying exhaust gases, a method of producing the same, and a method of purifying exhaust gases 失效
标题翻译：用于净化废气的催化剂，其制造方法和净化废气的方法
公开(公告)号：US06440378B1
公开(公告)日：2002-08-27
申请号：US09581673
申请日：2000-06-16
申请人： Hirohito Hirata , Shinji Tsuji
发明人： Hirohito Hirata , Shinji Tsuji
IPC分类号： B01D5354
CPC分类号： B01D53/945 , B01D53/94 , B01J23/38 , B01J23/464 , B01J35/0013 , B01J37/0213 , Y02T10/22 , Y10S502/514
摘要： A noble metal composite colloid composed of a plurality of noble metals is constructed to be loaded on a porous oxide support. The noble metals are loaded in particles which are larger than the conventional grains in the atomic state. Thus, vapor pressure decreases and volatile components, such as PtO2, are suppressed from dislocation or diffusion. In addition, affinity of the noble metals with the support is improved, and are suppressed from moving on the support. Thus, nobel metal grain growth is suppressed, decreases in catalytic activity is minimized and durability is improved.
摘要翻译：由多种贵金属构成的贵金属复合胶体被构造成负载在多孔氧化物载体上。贵金属以原子状态装载在比常规晶粒大的颗粒中。因此，蒸气压降低，挥发性组分（例如PtO 2）被抑制脱位或扩散。此外，贵金属与载体的亲和性提高，并且被抑制在载体上移动。因此，抑制了诺贝尔金属晶粒生长，催化活性降低到最小，耐久性提高。

10. 发明授权

US5780875A Hybrid optical integration assembly using optical platform 失效
标题翻译：混合光学集成组件采用光学平台
公开(公告)号：US5780875A
公开(公告)日：1998-07-14
申请号：US705524
申请日：1996-08-29
申请人： Shinji Tsuji , Ryuta Takahashi , Masato Shishikura , Satoru Kikuchi , Satoshi Aoki
发明人： Shinji Tsuji , Ryuta Takahashi , Masato Shishikura , Satoru Kikuchi , Satoshi Aoki
IPC分类号： G02B6/122 , G02B6/42 , H01L27/15 , H01L31/0232 , H01S5/00 , H01S5/022 , H04B10/40 , H04B10/50 , H04B10/60 , H04B10/67
CPC分类号： G02B6/4246 , G02B6/4224 , G02B6/4249 , H01L2224/45144 , H01L2224/48091 , H01L2224/49175 , H01L2224/73265 , H01L2924/3011
摘要： An optical assembly structure includes, a semiconductor element generating a large amount of heat and a high impedance optical element which are to be mounted, with low optical loss on the same semiconductor substrate which has an optical waveguide formed thereon.The element generating a large amount of heat is mounted on a terrace of the semiconductor substrate directly or through an insulating layer having a thickness of submicron order, while the high impedance element is mounted in a groove which is etched into the semiconductor substrate to such an extent that the optical axis of the high impedance element mates with the optical axis of the optical waveguide layer formed on a recess in the semiconductor substrate. The optical axes can be adjusted independently for the respective elements. Alternatively, with a potential on the semiconductor substrate set equal to a supply voltage or a ground potential, a crystal substrate for a forward biased heat generating element is given the polarity opposite to that of a crystal substrate for a reverse biased element which may imply a problem of stray capacitance.
摘要翻译：光学组件结构包括：在相同的半导体衬底上产生大量热量的半导体元件和要被安装的高阻抗光学元件，并在其上形成有光波导的同一半导体衬底上具有低的光学损耗。产生大量的元件的热量直接或通过具有亚微米级厚度的绝缘层安装在半导体衬底的平台上，而高阻抗元件安装在蚀刻到半导体衬底中的凹槽中，使得光轴高阻抗元件与形成在半导体衬底中的凹部上的光波导层的光轴配合。可以针对各个元件独立地调节光轴。或者，由于半导体衬底上的电位等于电源电压或接地电位，所以用于正向偏置发热元件的晶体衬底的极性与用于反向偏置元件的晶体衬底的极性相反，这可能意味着寄生电容问题。

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